To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.

Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. 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HAT2168H Silicon N Channel Power MOS FET Power Switching REJ03G0046-0700 Rev.7.00 Sep 20, 2005 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance R = 6 mΩ typ. (at V = 10 V) DS(on) GS Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 4 4 123 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V ±20 V GSS Drain current I 30 A D Drain peak current I Note1 120 A D(pulse) Body-drain diode reverse drain current I 30 A DR Avalanche current I Note 2 15 A AP Avalanche energy E Note 2 22 mJ AR Channel dissipation Pch Note3 15 W Channel to Case Thermal Resistance θch-C 8.33 °C/W Channel temperature Tch 150 °C Storage temperature Tstg – 55 to + 150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.7.00 Sep 20, 2005 page 1 of 7

HAT2168H Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 — — V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V ±20 — — V I = ±100 µA, V = 0 (BR)GSS G DS Gate to source leak current I — — ±10 µA V = ±16 V, V = 0 GSS GS DS Zero gate voltage drain current I — — 1 µA V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.0 — 2.5 V V = 10 V, I = 1 mA GS(off) DS D Static drain to source on state R — 6.0 7.9 mΩ I = 15 A, V = 10 V Note4 DS(on) D GS resistance R — 8.8 13.5 mΩ I = 15 A, V = 4.5 V Note4 DS(on) D GS Forward transfer admittance |y | 30 50 — S I = 15 A, V = 10 V Note4 fs D DS Input capacitance Ciss — 1730 — pF V = 10 V, V = 0, DS GS Output capacitance Coss — 400 — pF f = 1 MHz Reverse transfer capacitance Crss — 130 — pF Gate Resistance Rg — 0.55 — Ω Total gate charge Qg — 11 — nC V = 10 V, V = 4.5 V, DD GS Gate to source charge Qgs — 5 — nC ID = 30 A Gate to drain charge Qgd — 2.4 — nC Turn-on delay time t — 8 — ns V = 10 V, I = 15 A, d(on) GS D Rise time tr — 20 — ns VDD ≅ 10 V, RL = 0.67 Ω, Turn-off delay time t — 40 — ns Rg = 4.7 Ω d(off) Fall time t — 4 — ns f Body–drain diode forward voltage V — 0.85 1.10 V IF = 30 A, V = 0 Note4 DF GS Body–drain diode reverse recovery t — 25 — ns IF = 30 A, V = 0 rr GS time di / dt = 100 A/ µs F Notes: 4. Pulse test Rev.7.00 Sep 20, 2005 page 2 of 7

HAT2168H Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 40 500 W) 10 µs nnel Dissipation Pch ( 321000 Drain Current I (A)D 1001.0011 Otlihmpisiet earadret ibDoayCn i s ROinpDePSrW(aotni o=)n1 1 Tm0c s m= s12050 ° Cµs ha Ta = 25°C C 1 shot Pulse 0.01 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 10 V V = 10 V 3.2 V DS Pulse Test A) 40 4.5 V 3.0 V A) 40 (D (D nt I 30 2.8 V nt I 30 e e urr 20 2.6 V urr 20 C C n n Tc = 75°C ai ai Dr 10 VGS = 2.4 V Dr 10 25°C Pulse Test -25°C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current V) 250 Ω) 100 V (mDS(on) 200 Pulse Test ResistanceR (mDS(on) 50 Pulse Test Drain to Source Voltage 115050000 4 8 12 ID 1=6 201 50A AA20 Drain to Source On State 21002151V1G0S 0V =.3 4.5 V10 3 100 30 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.7.00 Sep 20, 2005 page 3 of 7

HAT2168H Static Drain to Source on State Resistance Forward Transfer Admittance vs. Ω) vs. Temperature Drain Current stance (mon) 20 Pulse Test | (S)s 100 si S( yf Tc = -25°C Static Drain to Source on State Re RD 1162840-25V1G0S 0 V= 4.52 5V 50 755 AID, 1 1=00 02 A100, 1A 2A205, A5 1A50 Forward Transfer Admittance | 0013..0013310.1 0.3 215°C 3 1VP0Du7Sl5s °=eC3 1T00e sVt 100 Case Temperature Tc (°C) Drain Current I (A) D Body-Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 100 10000 s) n me t (rr 50 C (pF) 31000000 Ciss y Ti e 300 Coss Recover 20 pacitanc 100 Crss e a s C ver di/dt = 100 A/µs 30 VGS = 0 Re VGS = 0, Ta = 25°C f = 1 MHz 10 10 0.1 0.3 1 3 10 30 100 0 5 10 15 20 25 30 Reverse Drain Current I (A) Drain to Source Voltage V (V) DR DS Dynamic Input Characteristics Switching Characteristics 50 20 100 (V)S ID = 30 A (V)S td(off) tr Voltage VD 4300 VDS VDD = 21505 VVV VGS 1162 Voltage VG Time t (ns) 1300 td(on) ce 20 8 ce ng Drain to Sour 10 VDD = 21505 VVV 40 Gate to Sour Switchi 13 VRGgS = = 4 1.70 ΩV ,, dVuDtSy =≤ 110 % V tf 0 8 16 24 32 40 0.1 0.3 1 3 10 30 100 Gate Charge Qg (nc) Drain Current I (A) D Rev.7.00 Sep 20, 2005 page 4 of 7

HAT2168H Reverse Drain Current vs. Maximum Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating J) 50 m 25 Current I (A)DR 4300 150 V V VGS = 0 e Energy E (AR 2105 VdRIAuDgPtD y=≥ = <15 15005 .AΩ1 V % ain 20 nch 10 Dr ala erse 10 e Av 5 v v Re Pulse Test petiti 0 0 0.4 0.8 1.2 1.6 2.0 Re 25 50 75 100 125 150 Source to Drain Voltage V (V) Channel Temperature Tch (°C) SD Normalized Transient Thermal Impedance vs. Pulse Width 3 s (t) γe Tc = 25°C c n 1 a D = 1 d e p m al I 0.3 0.5 m er h 0.2 T nt 0.1 θch - c(t) = γs (t) • θch - c sie 0.1 θch - c = 8.33°C/ W, Tc = 25°C n Tra 0.05 PW ormalized 0.03 0.00.20 1 1shot pulse PDM PTW D = T N 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform V 1 DSS E = L • I 2 • V L AR 2 AP VDSS – VDD DS Monitor I AP V Monitor (BR)DSS I AP Rg D. U. T V V DD DS I D Vin 50 Ω 15 V V DD 0 Rev.7.00 Sep 20, 2005 page 5 of 7

HAT2168H Switching Time Test Circuit Switching Time Waveform Vin Monitor Vout 90% Monitor D.U.T. Rg R Vin 10% L Vout 10% 10% Vin VDS 10 V = 10 V 90% 90% td(on) tr td(off) tf Rev.7.00 Sep 20, 2005 page 6 of 7

HAT2168H Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-100 PTZZ0005DA-A LFPAK 0.080g Unit: mm 4.9 5.3 Max 4.0 ± 0.2 0.25+–00..0035 3.3 5 1.0 2 3.95 +0.16.1–0.3 4. 1 4 0.20+–00..0035 +0.25–0.20 Max 6 0° – 8°0. 1.3 0.75 Max Max+0.03–0.04 0.10 1 07 1.27 1. 0. 0.40 ± 0.06 0.25M (Ni/Pd/Au plating) Ordering Information Part Name Quantity Shipping Container HAT2168H-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.7.00 Sep 20, 2005 page 7 of 7

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. 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