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H11N1TVM产品简介:
ICGOO电子元器件商城为您提供H11N1TVM由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 H11N1TVM价格参考。Fairchild SemiconductorH11N1TVM封装/规格:光隔离器 - 逻辑输出, Logic Output Optoisolator 5MHz Open Collector 4170Vrms 1 Channel 6-DIP。您可以下载H11N1TVM参考资料、Datasheet数据手册功能说明书,资料中有H11N1TVM 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | OPTOISOLATOR SCHMITT OUT 6-DIP |
产品分类 | |
品牌 | Fairchild Semiconductor |
数据手册 | |
产品图片 | |
产品型号 | H11N1TVM |
PCN设计/规格 | |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
上升/下降时间(典型值) | 7.5ns, 12ns |
传播延迟tpLH/tpHL(最大值) | 330ns, 330ns |
供应商器件封装 | 6-DIP |
共模瞬态抗扰度(最小值) | - |
包装 | 管件 |
安装类型 | 通孔 |
封装/外壳 | 6-DIP(0.400",10.16mm) |
工作温度 | -40°C ~ 85°C |
数据速率 | 5MHz |
标准包装 | 1,000 |
电压-正向(Vf)(典型值) | 1.4V |
电压-电源 | 4 V ~ 15 V |
电压-隔离 | 7500Vpk |
电流-DC正向(If) | 30mA |
电流-输出/通道 | 50mA |
输入-输入侧1/输入侧2 | 1/0 |
输入类型 | DC |
输出类型 | 开路集电极 |
通道数 | 1 |
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
H 1 1 N September 2016 1 M , H 1 1 N 2 M H11N1M, H11N2M — 6-Pin DIP Schmitt Trigger Output Optocoupler 6 - P i n Features Description D I P • High Data Rate, 5 MHz Typical (NRZ) The H11NXM series has a high-speed integrated circuit S • Free from Latch-up and Oscillation Throughout detector optically coupled to an aluminium gallium c Voltage and Temperature Ranges arsenide (AlGaAs) infrared emitting diode. The output h m • Microprocessor Compatible Drive incorporates a Schmitt trigger, which provides hysteresis i • Logic Compatible Output Sinks 16 mA at 0.5 V for noise immunity and pulse shaping. The detector t t Maximum circuit is optimized for simplicity of operation and utilizes T r • Guaranteed On/Off Threshold Hysteresis an open-collector output for maximum application i g • Wide Supply Voltage Capability, Compatible with All flexibility. g e Popular Logic Systems r • Safety and Regulatory Approvals: O – UL1577, 4,170 VAC for 1 Minute u RMS t p – DIN-EN/IEC60747-5-5, 850 V Peak Working u Insulation Voltage t O Applications p t o • Logic-to-Logic Isolator c o • Programmable Current Level Sensor u p • Line Receiver—Eliminate Noise and Transient l e Problems r • AC to TTL Conversion—Square Wave Shaping • Interfaces Computers with Peripherals • Isolated Power MOS Driver for Power Supplies Schematic Package Outlines ANODE 1 6 V CC CATHODE 2 5 GND Truth Table Input Output 3 4 VO H L L H Figure 1. Schematic Figure 2. Package Outlines ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11N1M, H11N2M Rev. 1.5
H 1 Safety and Insulation Ratings 1 N 1 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit M data. Compliance with the safety ratings shall be ensured by means of protective circuits. , H Parameter Characteristics 1 1 N Installation Classifications per DIN VDE < 150 VRMS I–IV 2 0110/1.89 Table 1, For Rated Mains Voltage < 300 V I–IV M RMS — Climatic Classification 55/100/21 6 Pollution Degree (DIN VDE 0110/1.89) 2 - P Comparative Tracking Index 175 in D I P Symbol Parameter Value Unit S c Input-to-Output Test Voltage, Method A, V x 1.6 = V , h IORM PR 1360 V m Type and Sample Test with t = 10 s, Partial Discharge < 5 pC peak VPR Input-to-Output Test Voltage,m Method B, VIORM x 1.875 = VPR, 1594 V itt T 100% Production Test with tm = 1 s, Partial Discharge < 5 pC peak ri g VIORM Maximum Working Insulation Voltage 850 Vpeak g e V Highest Allowable Over-Voltage 6000 V r IOTM peak O External Creepage ≥ 7 mm u t External Clearance ≥ 7 mm p u External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm t O DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm p t T Case Temperature(1) 175 °C o S c IS,INPUT Input Current(1) 350 mA ou PS,OUTPUT Output Power(1) 800 mW ple R Insulation Resistance at T , V = 500 V(1) > 109 Ω r IO S IO Note: 1. Safety limit values – maximum values allowed in the event of a failure. ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11N1M, H11N2M Rev. 1.5 2
H 1 Absolute Maximum Ratings 1 N 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be M operable above the recommended operating conditions and stressing the parts to these levels is not recommended. , In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. H The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified. 11 N Symbol Parameters Value Units 2 M Total Device — TSTG Storage Temperature -40 to +125 °C 6 - T Operating Temperature -40 to +85 °C P OPR i n TJ Junction Temperature -40 to +125 °C D TSOL Lead Solder Temperature 260 for 10 seconds °C IP P Total Device Power Dissipation at 25°C 210 mW S D c Derate Above 25°C 2.94 mW/°C h m Emitter i t t IF Continuous Forward Current 30 mA T r V Reverse Voltage 6 V ig R g I (pk) Forward Current – Peak (1 µs pulse, 300 pps) 100 mA e F r P LED Power Dissipation 60 mW O D u Detector t p P Detector Power Dissipation 150 mW u D t V V Allowed Range 0 to 16 V O O 45 p V V Allowed Range 3 to 16 V t CC 65 o c IO I4 Output Current 50 mA o u p l e r Electrical Characteristics T = 25°C unless otherwise specified. A Individual Component Characteristics Symbol Parameters Test Conditions Min. Typ. Max. Units Emitter I = 10 mA 1.4 2.0 F V Input Forward Voltage V F I = 0.3 mA 0.75 1.25 F I Reverse Current V = 5 V 10 µA R R C Capacitance V = 0, f = 1.0 MHz 100 pF J Detector V Operating Voltage Range 4 15 V CC I Supply Current I = 0, V = 5 V 6 10 mA CC(off) F CC I Output Current, High I = 0, V = V = 15 V 100 µA OH F CC O ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11N1M, H11N2M Rev. 1.5 3
H 1 Electrical Characteristics (Continued) 1 N 1 TA = 25°C unless otherwise specified. M , Transfer Characteristics H 1 Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Units 1 N I Supply Current I = 10 mA, V = 5 V All 6.5 10.0 mA 2 CC(on) F CC M V Output Voltage, Low RL= 270 Ω,VCC = 5 V, All 0.5 V — OL I = I Maximum F F(on) 6 IF(on) Turn-On Threshold Current RL= 270 Ω, VCC = 5 V(2) HH1111NN12MM 02..83 35..20 mA -Pin D I Turn-Off Threshold Current R = 270 Ω, V = 5 V All 0.3 mA F(off) L CC IP IF(off) / IF(on) Hysteresis Ratio RL = 270 Ω, VCC = 5 V All 0.65 0.95 S c h m Switching Speed i t t Symbol AC Characteristics Test Conditions Min. Typ. Max. Units T r t Turn-On Time C = 120 pF, tP = 1 µs, 100 330 ns ig on R = (3), Figure 9 g E e t Rise Time C = 120 pF, tP = 1 µs, 7.5 ns r O r R = (3), Figure 9 E u t C = 120 pF, t = 1 µs, p toff Turn-Off Time R = (3), FiguPre 9 150 330 ns u E t O C = 120 pF, t = 1 µs, t Fall Time P 12 ns p f RE = (3), Figure 9 to Data Rate 5 MHz c o u p l Isolation Characteristics e r Symbol Parameters Test Conditions Min. Typ. Max. Units V Input-Output Isolation Voltage t = 1 Minute 4170 VAC ISO RMS C Isolation Capacitance V = 0 V, f = 1 MHz 0.4 0.6 pF ISO I-O R Isolation Resistance V = ±500 VDC, T = 25°C 1011 Ω ISO I-O A Notes: 2. Maximum I is the maximum current required to trigger the output. For example, a 3.2 mA maximum trigger F(on) current would require the LED to be driven at a current greater than 3.2 mA to guarantee the device will turn on. A 10% guard band is recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 30 mA. 3. H11N1: R = 910 Ω, H11N2: R = 560 Ω E E ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11N1M, H11N2M Rev. 1.5 4
H 1 Typical Performance Curves 1 N 1 6 1.4 M T N , VOH RE 1.2 TURN ON THRESHOLD H 5 R 1 VCC = 5 V CU 1 OLTAGE (V) 4 TRAL == 2275°0C Ω RESHOLD 01..80 TURN OFF THRESHOLD N2M — PUT V 3 IF(OFF) IF(ON) ED TH 0.6 6- T Z P V - OUO 12 Hshyasdteerde sfoisr aillruesatration VOL I - NORMALIF 000...024 NTVUCORCR NM= OA5 LNVI, Z TTEHADR = TE 2OS5H::°COLD AT in DIP Sc 0 0 2 4 6 8 10 12 14 16 h 0 1 2 3 4 m IF – INPUT CURRENT (mA) VCC – SUPPLY VOLTAGE (V) itt Figure 3. Transfer Characteristics Figure 4. Threshold Current vs. Supply Voltage T r i g g 1.2 e r IF(On) O 100 1.0 u MALIZED THRESHOLDURRENT I, IF(On)F(Off)000...468 NORMALIIZF(EODff )TO : LOAD CURRENT (mA) 10 IVFC =C I =F( 5O NV) tput Optocou NORC 0.2 VTAC C= =2 55° CV I - O ple r 0.0 1 0 10 20 30 40 50 60 70 0.0 0.2 0.4 0.6 0.8 1.0 TA – TEMPERATURE (°C) VO – OUTPUT VOLTAGE, LOW (V) Figure 5. Threshold Current vs. Temperature Figure 6. Load Current vs. Output Voltage 12 100 10 TA = -40°C A) A) m m NT ( 8 NT ( Y CURRE 6 TA = 25°C D CURRE 10 TA = 85°C TA =T 2A5 =°C -40°C – SUPPL 4 TA = 85°C ORWAR CC – F I F ON STATE IF = 10 mA I 2 OFF STATE IF = 0 0 1 2 4 6 8 10 12 14 16 1.0 1.2 1.4 1.6 1.8 2.0 VCC – SUPPLY VOLTAGE (V) VF – FORWARD VOLTAGE (V) Figure 7. Supply Current vs. Supply Voltage Figure 8. LED Forward Current vs. Forward Voltage ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11N1M, H11N2M Rev. 1.5 5
H 1 Switching Test Circuit and Waveforms 1 N 1 M C I6 5 V (cid:87)(cid:83) , H I F 1 VIN 5 V 50% 1 RE 1 H11N1M 6 RL 270 Ω 0 N2 M V 4 IN VO ton toff — tr = tf ≤ 0.01 μs 2 5 0.1μF 10% 6- Z = 50 Ω V P O i 90% n D tf tr IP S c h Figure 9. Switching Test Circuit and Waveforms m i t t T Reflow Profile r i g g e 300 r 260°C O 280 u t 260 p >245°C = 42 Sec u 240 t O 220 p t 200 o c o 180 Time above u p °C 160 183°C = 90 Sec le 140 r 120 100 1.822°C/Sec Ramp up rate 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) Figure 10. Reflow Profile ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11N1M, H11N2M Rev. 1.5 6
H 1 Ordering Information 1 N 1 Part Number Package Packing Method M , H11N1M DIP 6-Pin Tube (50 Units) H 1 H11N1SM SMT 6-Pin (Lead Bend) Tube (50 Units) 1 N H11N1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) 2 M H11N1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) — H11N1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) 6 - H11N1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) P i n H11N1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) D Note: IP 4. The product orderable part number system listed in this table also applies to the H11N2M product families. S c h m Marking Information i t t T r i g g 1 e r O u H11N1 2 t p u V X YY Q 6 t O p t o c 3 4 5 o u p l Figure 11. Top Mark e r Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “6” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11N1M, H11N2M Rev. 1.5 7
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1
Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: H11N1SR2VM H11N1SVM H11N1M H11N1TVM H11N1VM H11N1SM H11N1SR2M