Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

4 N 3 8 December 2014 M , H 1 1 D 1 M 4N38M, H11D1M, H11D3M, MOC8204M , H 1 6-Pin DIP High Voltage Phototransistor Optocouplers 1 D 3 M Features Description , M O ■ High Voltage: The 4N38M, H11D1M, H11D3M, and MOC8204M are C – MOC8204M, BV = 400 V phototransistor-type optically coupled optoisolators. A 8 CEO gallium arsenide infrared emitting diode is coupled with a 2 – H11D1M, BV = 300 V 0 CEO high voltage NPN silicon phototransistor. The device is 4 – H11D3M, BVCEO = 200 V supplied in a standard plastic six-pin dual-in-line M ■ Safety and Regulatory Approvals: package. — – UL1577, 4,170 VAC for 1 Minute RMS 6 ■ DIN-EN/IEC60747-5-5, 850 V Peak Working -P Insulation Voltage in D Applications I P ■ Power Supply Regulators H i ■ Digital Logic Inputs g h ■ Microprocessor Inputs V o ■ Appliance Sensor Systems l t a ■ Industrial Controls g e P h o t o t Schematic Package Outlines r a n s i s t o r O ANODE 1 6 BASE p t o c o u CATHODE 2 5 COLLECTOR p l e r s N/C 3 4 EMITTER Figure 2. Package Outlines Figure 1. Schematic ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7

4 N Safety and Insulation Ratings 3 8 M As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit , data. Compliance with the safety ratings shall be ensured by means of protective circuits. H 1 Parameter Characteristics 1 D 1 Installation Classifications per DIN VDE < 150 VRMS I–IV M 0110/1.89 Table 1, For Rated Mains Voltage < 300 VRMS I–IV , H Climatic Classification 55/100/21 1 1 D Pollution Degree (DIN VDE 0110/1.89) 2 3 M Comparative Tracking Index 175 , M O C Symbol Parameter Value Unit 8 2 Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, 1360 V 0 Type and Sample Test with t = 10 s, Partial Discharge < 5 pC peak 4 V m M PR Input-to-Output Test Voltage, Method B, V x 1.875 = V , IORM PR 1594 V — 100% Production Test with t = 1 s, Partial Discharge < 5 pC peak m 6 V Maximum Working Insulation Voltage 850 V - IORM peak P i V Highest Allowable Over-Voltage 6000 V n IOTM peak D External Creepage ≥ 7 mm I P External Clearance ≥ 7 mm H External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm ig h DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm V o TS Case Temperature(1) 175 °C lt a I Input Current(1) 350 mA g S,INPUT e P Output Power(1) 800 mW S,OUTPUT P R Insulation Resistance at T , V = 500 V(1) > 109 Ω h IO S IO o t o Note: t r 1. Safety limit values – maximum values allowed in the event of a failure. a n s i s t o r O p t o c o u p l e r s ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 2

4 N Absolute Maximum Ratings 3 8 M Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be , operable above the recommended operating conditions and stressing the parts to these levels is not recommended. H In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. 1 1 The absolute maximum ratings are stress ratings only. D 1 Symbol Parameter Device Value Unit M , TOTAL DEVICE H 1 T Storage Temperature All -40 to +125 °C 1 STG D T Operating Temperature All -40 to +100 °C 3 OPR M TJ Junction Temperature All -40 to +125 ºC , M TSOL Lead Solder Temperature All 260 for 10 seconds °C O C Total Device Power Dissipation @ TA = 25°C 420 mW 8 PD All 2 Derate Above 25°C 3.5 mW/°C 0 4 EMITTER M IF Forward DC Current(2) All 80 mA — 6 VR Reverse Input Voltage(2) All 6.0 V -P i IF(pk) Forward Current – Peak (1 µs pulse, 300pps)(2) All 3.0 A n D P LED Power Dissipation @ TA = 25°C(2) All 120 mW IP D Derate Above 25°C 1.41 mW/°C H i DETECTOR g h Power Dissipation @ T = 25°C 300 mW V A P All o D Derate linearly above 25°C 4.0 mW/°C l t a MOC8204M 400 V g e H11D1M 300 V P VCEO Collector to Emitter Voltage(2) h H11D3M 200 V o t 4N38M 80 V o t r MOC8204M 400 V a n H11D1M 300 V s V Collector Base Voltage(2) is CBO H11D3M 200 V t o r 4N38M 80 V O H11D1M, p t V Emitter to Collector Voltage(2) H11D3M, 7 V o ECO c MOC8204M o u IC Collector Current (Continuous) All 100 mA p l e Note: r s 2. Parameters meet or exceed JEDEC registered data (for 4N38M only). ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 3

4 N Electrical Characteristics 3 8 M TA = 25°C unless otherwise specified. , H Individual Component Characteristics 1 1 Symbol Characteristic Test Conditions Device Min. Typ. Max. Unit D 1 EMITTER M V Forward Voltage(3) I = 10 mA All 1.15 1.50 V , H F F 1 ΔVF Forward Voltage All -1.8 mV/°C 1D ΔTA Temperature Coefficient 3 M BVR Reverse Breakdown Voltage IR = 10 µA All 6 25 V , M V = 0 V, f = 1 MHz 50 pF F O C Junction Capacitance All J V = 1 V, f = 1 MHz 65 pF C F 8 I Reverse Leakage Current(3) V = 6 V All 0.05 10 µA 2 R R 0 DETECTOR 4 M MOC8204M 400 V — R = 1 MΩ, Breakdown Voltage BE H11D1M 300 V 6 BVCEO Collector-to-Emitter(3) IC = 1.0 mA, IF = 0 H11D3M 200 V -P i n No RBE, IC = 1.0 mA 4N38M 80 V D MOC8204M 400 V IP H11D1M 300 V H BVCBO Collector to Base(3) IC = 100 µA, IF = 0 ig H11D3M 200 V h 4N38M 80 V V o l BV Emitter to Base I = 100 µA, I = 0 4N38M 7 V t EBO E F a g BV Emitter to Collector I = 100 µA, I = 0 All 7 10 V ECO E F e V = 300 V, I = 0, P CE F 100 nA h TA = 25°C o MOC8204M t V = 300 V, I = 0, o CE F 250 µA t T = 100°C r A a n VCE = 200V, IF = 0, 100 nA s TA = 25°C is Leakage Current V = 200 V, I = 0, H11D1M to I Collector to Emitter(3) CE F 250 µA r CEO (R = 1 MΩ) TA = 100°C O BE p V = 100 V, I = 0, CE F 100 nA to T = 25°C A c H11D3M o VCE = 100 V, IF = 0, 250 µA u T = 100°C p A l e No RBE, VCE = 60 V, 4N38M 50 nA rs I = 0, T = 25°C F A Note: 3. Parameters meet or exceed JEDEC registered data (for 4N38M only). ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 4

4 N Electrical Characteristics (Continued) 3 8 M T = 25°C unless otherwise specified. A , H 1 Transfer Characteristics 1 D Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit 1 M EMITTER , H I = 10 mA, V = 10 V, H11D1M, H11D3M, CTR CCuorllreecntto Tr-rtaon-Esfmeri tRteartio, RFBE = 1 MΩ CE MOC8204M 2 (20) mA (%) 11D I = 10 mA, V = 10 V 4N38M 2 (20) mA (%) 3 F CE M VCE(SAT) Saturation Voltage(4) IRFB =E 1=0 1 m MAΩ, IC = 0.5 mA, H11MDO1MC,8 H20141MD3M, 0.1 0.4 V , MO I = 20 mA, I = 4 mA 4N38M 1.0 V C F C 8 SWITCHING TIMES 2 0 Non-Saturated 4 tON Turn-on Time VCE = 10 V, IC = 2 mA, All 5 µs M R = 100 Ω — t Turn-off Time L All 5 µs OFF 6 Note: -P 4. Parameters meet or exceed JEDEC registered data (for 4N38M only). in D I P Isolation Characteristics H Symbol Characteristic Test Conditions Min. Typ. Max. Unit ig h VISO Input-Output Isolation Voltage t = 1 Minute 4170 VACRMS V o CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF lt RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C 1011 Ω ag e P h o t o t r a n s i s t o r O p t o c o u p l e r s ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 5

4 N Typical Performance Curves 3 8 M 1.8 , T Normalized to: H 1.7 NE VCE = 10 V 1 )V( EGATLOV D 11..56 RRUC TUPTUO 110 IIFF == 1500 mmAA IRTFAB = E= 1 =20 51 m˚0C6A Ω 1D1M, H RAWRO 11..34 TA = -55˚C – I DEC IF = 5 mA 11D F – VF 1.2 TA = 25˚C ZILAM 0.1 3M R , O M 1.1 N 0.01 O TA = 100˚C 1.0 C 1 10 100 0.1 1 10 100 8 IF – LED FORWARDCURRENT (mA) VCE – COLLECTOR VOLTAGE (V) 20 Figure 3. LED Forward Voltage Figure 4. Normalized Output Characteristics 4 M vs. Forward Current — 10 6 TNERRUC T NVRITFACoB = rEE=m 1 ==2a0 511l im˚z00Ce 6AVd Ω to: TNERRUC T IF = 20 mA NVIRTFACBo = rEE=m 1 ==2a0 511l im˚z00Ce 6AVd Ω to: -Pin DI U 1 U P PTU PTU 1 IF = 10 mA H O – O – ig I DEZILC 0.1 I DEZILC IF = 5 mA h Vo A A l M M t R R a O O g N N e 0.01 0.1 P 1 10 -60 -40 -20 0 20 40 60 80 100 h IF – LED INPUT CURRENT (mA) TA – AMBIENT TEMPERATURE (˚C) ot o Figure 5. Normalized Output Current Figure 6. Normalized Output Current t r vs. LED Input Current vs. Temperature a n s i s T t N 10 o TNERRUC KRA 110000000 NVRTACoB rEE=m ==2a 511li˚z00Ce06d ΩV to: VCE = 300 V ERRUC ESAB-RO 6789 IF = 50 mA NVIRTFACoB = rEE=m 1 ==2a0 511l im˚z00Ce 6AVd Ω to: r Optoco D – OEC 100 VCE = 100 V TCELLO 5 uple I DEZ 10 C – O 34 rs ILAMR 1 VCE = 50 V I DEBC 2 IF = 10 mA O Z N IL 1 0.1 AMR 0 IF = 5 mA 10 20 30 40 50 60 70 80 90 100 110 O -60 -40 -20 0 20 40 60 80 100 N TA – AMBIENT TEMPERATURE (˚C) TA – AMBIENT TEMPERATURE (˚C) Figure 7. Normalized Dark Current Figure 8. Normalized Collector-Base Current vs. Ambient Temperature vs. Temperature ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 6

4 N Reflow Profile 3 8 M 300 , H 260°C 1 280 1 D 260 1 > 245°C = 42 s M 240 , H 220 1 200 1 D 180 3 Time above M °C 160 183°C = 90 s , M 140 O C 120 8 100 1.822°C/s Ramp-up rate 2 0 4 80 M 60 — 40 6 20 33 s -P i n 0 D 0 60 120 180 270 360 I P Time (s) H i g Figure 9. Reflow Profile h V o l t a g e P h o t o t r a n s i s t o r O p t o c o u p l e r s ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 7

4 N Ordering Information 3 8 M Part Number Package Packing Method , H H11D1M DIP 6-Pin Tube (50 Units) 1 1 D H11D1SM SMT 6-Pin (Lead Bend) Tube (50 Units) 1 M H11D1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) , H11D1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) H 1 H11D1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) 1 D H11D1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) 3 M H11D1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) , M Note: O C 2. The product orderable part number system listed in this table also applies to the 4N38M, H11D3M, and MOC8204M 8 devices. 2 0 4 M Marking Information — 6 - P i n 1 D I P H11D1 2 H i g V X YY Q 6 h V o l t a g 3 4 5 e P h Figure 10. 12. Top Mark o t o Table 1. Top Mark Definitions tr a n 1 Fairchild Logo s i 2 Device Number s t o 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) r O 4 One-Digit Year Code, e.g., “4” p t 5 Digit Work Week, Ranging from “01” to “53” o c 6 Assembly Package Code o u p l e r s ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 8

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: H11D1SM H11D1VM H11D1M H11D1SR2VM H11D1SR2M H11D1SVM