Not Available for New Designs GPP100MS-E3 www.vishay.com Vishay General Semiconductor Photovoltaic Solar Panel Protection Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • High forward surge capability P600 • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS I 10 A For use in solar panel protection F(AV) V 1000 V RRM MECHANICAL DATA I 440 A FSM Case: P600 VF at IF = 10 A (TA = 125 °C) 0.80 V Molding compound meets UL 94 V-0 flammability rating I 5.0 μA Base P/N-E3 - RoHS-compliant, commercial grade R T max. 175 °C Terminals: Matte tin plated leads, solderable per J J-STD-002 and JESD 22-B102 Package P600 E3 suffix meets JESD 201 class 1A whisker test Diode variations Single die Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL GPP100MS UNIT Maximum repetitive peak reverse voltage V 1000 V RRM Maximum average forward rectified current I (1) 10 A 0.375" (9.5 mm) lead length at T = 50 °C F(AV) A Peak forward surge current 8.3 ms single half sine-wave T = 25 °C I 440 A A FSM Operating junction and storage temperature range T , T - 55 to + 175 °C J STG Note (1) With heatsink ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5.0 A 0.86 - F T = 25 °C A I = 10 A 0.92 1.05 F Instantaneous forward voltage V (1) V F I = 5.0 A 0.73 - F T = 125 °C A I = 10 A 0.80 0.95 F T = 25 °C 0.4 5.0 A Reverse current V = 1000 V I (2) μA R R T = 125 °C 103 500 A Typical reverse recovery time I = 0.5 A, I = 1.0 A, I = 0.25 A t 5.5 - μs F R rr rr Typical junction capacitance 4.0 V, 1 MHz C 110 - pF J Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: 40 ms pulse width Revision: 15-Aug-13 1 Document Number: 89953 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Not Available for New Designs GPP100MS-E3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL GPP100MS UNIT R (1) 20 JA Typical thermal resistance °C/W R (1) 4.0 JL Note (1) Leads clipped at 3 mm lead length from plastic body on 7.0 cm x 2.2 cm x 1.9 cm x 2 heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GPP100MS-E3/54 2.0 54 800 13" diameter paper tape and reel GPP100MS-E3/73 2.0 73 300 Ammopack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 12 100 A) TA = 175 °C )At (en 10 urrent ( TA = 150 °C rurCd rwaroF 68 us Forward C 10 TA = 1T0A0 =°C 125 °C TA = 85 °C eagrveA 24 stantaneo 1 TA = 25 °C n I 0 0.1 0 25 50 75 100 125 150 175 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 11 1000 10 D = 0.8 A) TA = 175 °C D = 0.5 m W)(s sLo 789 D = 0.0D5 = 0D.1 = 0D. 2= 0.3 D = 1.0 e Current ( 11000 TA = 12T5A =°C 150T A° C= 100 °C r ew 6 vers TA = 85 °C o 55 e P R eagre 34 T neous 1 vA 2 nta 0.1 T = 25 °C a A 1 D = tp/T tp Inst 0 0.01 0 1 2 3 4 5 6 7 8 9 10 11 12 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Revision: 15-Aug-13 2 Document Number: 89953 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Not Available for New Designs GPP100MS-E3 www.vishay.com Vishay General Semiconductor 1000 T = 25 °C J f = 1.0 MHz F) VSTG = 50 mVp-p p e ( c n a cit pa 100 a C n o cti n u J 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) P600 1.0(25.4) MIN. 0.360(9.1) 0.340(8.6) 0.360(9.1) 0.340(8.6) 0.052(1.32) 1.0(25.4) 0.048(1.22) MIN. DIA. Revision: 15-Aug-13 3 Document Number: 89953 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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