GP1S51VJ000F GP1S51VJ000F Gap : 3mm Slit : 0.5mm Phototransistor Output, Case package Transmissive Photointerrupter ■Description ■Agency approvals/Compliance GP1S51VJ000F is a standard, phototransistor output, 1. Compliant with RoHS directive transmissive photointerrupter with opposing emitter and detector in a case, providing non-contact sensing. For ■Applications this family of devices, the emitter and detector are insert- 1. General purpose detection of object presence or mo- ed in a case, resulting in a through-hole design. tion. The case includes additional screw fixing holes, on 2. Example : Printer, FAX, Optical storage unit both sides 3.2mm diameter. ■Features 1. Transmissive with phototransistor output 2. Highlights: • Verical Slit for alternate motion detection • Includes additional screw fi xing holes 3. Key Parameters: • Gap Width : 3mm • Slit Width (detector side): 0.5mm • Package : 12.2×10×18mm 4. RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device. Sheet No.: D3-A02401FEN 1 Date Oct. 3. 2005 © SHARP Corporation

GP1S51VJ000F ■Internal Connection Diagram Top view 1 4 1 Anode 2 Cathode 3 Collector 4 Emitter 2 3 ■Outline Dimensions (Unit : mm) Top view Sharp mark “S” S51 5 Model No. 2 A-Aʼ 12.2±0.3 nter) B-Bʼ Date code section e section 0.5 1.5 A3+−00..21B (2.5) etctor c 0.5 5 (Bo2th− φs3id.2e±)0.2 D 10 7.5 ( 5 7 6 2−R3 Aʻ Bʻ 3. MIN. 0.45+−00..31 0.4+−00..31 10 (9.2) (2.54) 12 18 2 3 1 4 • Unspecifi ed tolerance shall be as follows ; Dimensions (d) Tolerance d≤6 ±0.1 6<d≤18 ±0.2 • ( ) : Reference dimensions Product mass : approx. 0.7g Dip soldering material : Sn−3Ag−0.5Cu Sheet No.: D3-A02401FEN 2

GP1S51VJ000F Date code (2 digit) 1st digit 2nd digit Year of production Month of production A.D. Mark Month Mark 2000 0 1 1 2001 1 2 2 2002 2 3 3 2003 3 4 4 2004 4 5 5 2005 5 6 6 2006 6 7 7 2007 7 8 8 2008 8 9 9 2009 9 10 X 2010 0 11 Y : : 12 Z repeats in a 10 year cycle Country of origin Japan, Indonesia or Philippines (Indicated on the packing case) Sheet No.: D3-A02401FEN 3

GP1S51VJ000F ■Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Rating Unit ∗1 Forward current I 50 mA F ∗1, 2Peak forward current I 1 A Input FM Reverse voltage V 6 V R Power dissipation P 75 mW Collector-emitter voltage V 35 V CEO Emitter-collector voltage V 6 V Output ECO Collector current I 20 mA C ∗1 Collector power dissipation P 75 mW C Operating temperature Topr −25 to +85 ˚C Storage temperature Tstg −40 to +100 ˚C ∗3Soldering temperature T 260 ˚C sol ∗1 Refer to Fig. 1, 2, 3 ∗2 Pulse width ≤ 100μs, Duty ratio=0.01 ∗3 For 5s or less ■Electro-optical Characteristics (Ta=25˚C) Parameter Symbol Condition MIN. TYP. MAX. Unit Forward voltage VF IF=20mA − 1.25 1.4 V Input Peak forward voltage VFM IFM=0.5A 3 4 V Reverse current IR VR=3V − − 10 μA Output Collector dark current ICEO VCE=20V − 1 100 nA Transfer Collector current IC VCE=5V, IF=20mA 0.5 − 5 mA charac- Collector-emitter saturation voltage VCE(sat) IF=40mA, IC=0.5mA − − 0.4 V teristics Response time RFaislle ttiimmee ttrf VCE=2V, IC=2mA, RL=100Ω −− 43 2105 μs Sheet No.: D3-A02401FEN 4

GP1S51VJ000F Fig.1 Forward Current vs. Ambient Fig.2 Collector Power Dissipation vs. Temperature Ambient Temperature 60 120 50 W) 100 m urrent I (mA)F 3400 dissipation P (C 687005 Forward c 20 ctor power 40 e 10 oll 20 C 15 0 0 −25 0 25 50 75 85 100 −25 0 25 50 75 85 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.3 Peak Forward Current vs. Fig.4 Forward Current vs. Duty Ratio Forward Voltage Pulse width≤100μs Ta=25˚C Ta=75˚C 25˚C 0˚C A)1 000 50˚C −25˚C (mM mA) 100 orward current IF 100 ward current I (F 10 ak f For e P 10 1 10−2 10−1 1 0 0.5 1 1.5 2 2.5 3 3.5 Duty ratio Foward voltage VF (V) Fig.5 Collector Current vs. Fig.6 Collector Current vs. Forward Current Collector-emitter Voltage 12 7 TVaC=E2=55˚VC 6 Ta=25˚C 10 IF=50mA A) A) 5 m 8 m 40mA Collector current I (C 64 Collector current I (C 342 2300mmAA 2 10mA 1 0 0 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 Forward current IF (mA) Collector-emitter V (V) CE Sheet No.: D3-A02401FEN 5

GP1S51VJ000F Fig.7 Collector Current vs. Fig.8 Collector-emitter Saturation Voltage Ambient Temperature vs. Ambient Temperature 4 0.25 IVF=CE2=05mVA (V)E (sat) 0.2 IIFC==400.5mmAA C A) 3 e V m ag ector current I (C 2 er saturation volt 0.01.51 Coll 1 mitt e or- 0.05 ct e oll C 0 0 −25 0 25 50 75 100 −25 0 25 50 75 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.9 Response Time vs. Load Resistance Fig.10 Test Circuit for Response Time 100 VCE=2V IC=2mA Ta=25˚C VCC Input RD RL Input Output Output 10% s)μ 10 90% me ( tf onse ti td tr td tr ts tf p s Re 1 t s 0.1 0.01 0.1 1 10 Load resistance RL (kΩ) Fig.11 Frequency Response Fig.12 Collector Dark Current vs. Ambient Temperature 5 10−6 VCE=2V VCE=20V IC=2mA 0 Ta=25˚C A) (O 10−7 E Voltage gain A (dB)V −−150 R 1L0=kΩ 1kΩ 100Ω ollector dark current IC 1100−−98 C −15 10−10 −20 −25 0 25 50 75 100 102 103 104 105 106 Frequency f (Hz) Ambient temperature Ta (˚C) Sheet No.: D3-A02401FEN 6

GP1S51VJ000F Fig.13 Detecting Position Characteristics (1) Fig.14 Detecting Position Characteristics (2) IF=20mA, VCE=5V IF=20mA, VCE=5V Ta=25˚C Ta=25˚C 100 L 100 Shield %) %) nt ( Sensor nt ( L − e e 0 curr Shield curr + or or ct − + ct olle 50 0 olle 50 Sensor c c e e v v ati ati el el R R 0 0 −1.5 −1 −0.5 0 0.5 1 1.5 2 2.5 −3 −2 −1 0 1 2 3 4 5 Shield moving distance L (mm) Shield moving distance L (mm) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D3-A02401FEN 7

GP1S51VJ000F ■Design Considerations ●Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 4mm or more from the top of elements. (Example) 4mm or more This product is not designed against irradiation and incorporates non-coherent IRED. ●Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ●Parts This product is assembled using the below parts. • Photodetector (qty. : 1) Maximum Sensitivity Sensitivity Category Material Response time (μs) wavelength (nm) wavelength (nm) Phototransistor Silicon (Si) 800 400 to 1 200 3 • Photo emitter (qty. : 1) Maximum light emitting Category Material I/O Frequency (MHz) wavelength (nm) Infrared emitting diode Gallium arsenide (GaAs) 950 0.3 (non-coherent) • Material Case Lead frame plating Black NORYL resin Solder dip. (Sn−3Ag−0.5Cu) Sheet No.: D3-A02401FEN 8

GP1S51VJ000F ■Manufacturing Guidelines ●Soldering Method Flow Soldering: Soldering should be completed below 260˚C and within 5 s. Please take care not to let any external force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by refl ow. Hand soldering Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C. Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at normal temperature. Other notice Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. Flux Some fl ux, which is used in soldering, may crack the package due to synergistic effect of alcohol in fl ux and the rise in temperature by heat in soldering. Therefore, in using fl ux, please make sure that it does not have any infl uence on appearance and reliability of the photointerrupter. Sheet No.: D3-A02401FEN 9

GP1S51VJ000F ●Cleaning instructions Solvent cleaning : Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning : The affect to device by ultrasonic cleaning is different by cleaning bath size, ultrasonic power output, cleaning time, PCB size or device mounting condition etc. Please test it in actual using condition and confi rm that doesn't occur any defect before starting the ultrasonic cleaning. Recommended solvent materials : Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. ●Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D3-A02401FEN 10

GP1S51VJ000F ■Package specifi cation ●Case package Package materials Anti-static plastic bag : Polyethtylene Moltopren : Urethane Partition : Corrugated fi berboard Packing case : Corrugated fi berboard Package method 100 pcs of products shall be packaged in a plastic bag, Ends shall be fi xed by stoppers. The bottom ot the packing case is covered with moltopren, and the partition is set in the packing case. Each partition should have 1 plastic bag. The 10 plastic bags containing a product are put in the packing case. Moltopren should be located after all product are settled (1 packing contains 1 000 pcs). Packing composition Moltopren Partition Anti-static plastic bag Packing case Sheet No.: D3-A02401FEN 11

GP1S51VJ000F ■Important Notices · The circuit application examples in this publication with equipment that requires higher reliability such as: are provided to explain representative applications of --- Transportation control and safety equipment (i.e., SHARP devices and are not intended to guarantee any aircraft, trains, automobiles, etc.) circuit design or license any intellectual property rights. --- Traffi c signals SHARP takes no responsibility for any problems related --- Gas leakage sensor breakers to any intellectual property right of a third party resulting --- Alarm equipment from the use of SHARP's devices. --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in · Contact SHARP in order to obtain the latest device connection with equipment that requires an extremely specification sheets before using any SHARP device. high level of reliability and safety such as: SHARP reserves the right to make changes in the --- Space applications specifi cations, characteristics, data, materials, structure, --- Telecommunication equipment [trunk lines] and other contents described herein at any time --- Nuclear power control equipment without notice in order to improve design or reliability. --- Medical and other life support equipment (e.g., Manufacturing locations are also subject to change scuba). without notice. · If the SHARP devices listed in this publication fall · Observe the following points when using any devices within the scope of strategic products described in the in this publication. SHARP takes no responsibility for Foreign Exchange and Foreign Trade Law of Japan, it damage caused by improper use of the devices which is necessary to obtain approval to export such SHARP does not meet the conditions and absolute maximum devices. ratings to be used specifi ed in the relevant specifi cation sheet nor meet the following conditions: · This publication is the proprietary product of SHARP (i) The devices in this publication are designed for use and is copyrighted, with all rights reserved. Under in general electronic equipment designs such as: the copyright laws, no part of this publication may be --- Personal computers reproduced or transmitted in any form or by any means, --- Offi ce automation equipment electronic or mechanical, for any purpose, in whole or in --- Telecommunication equipment [terminal] part, without the express written permission of SHARP. --- Test and measurement equipment Express written permission is also required before any --- Industrial control use of this publication may be made by a third party. --- Audio visual equipment --- Consumer electronics · Contact and consult with a SHARP representative (ii) Measures such as fail-safe function and redundant if there are any questions about the contents of this design should be taken to ensure reliability and safety publication. when SHARP devices are used for or in connection [H149] Sheet No.: D3-A02401FEN 12

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