ICGOO在线商城 > 分立半导体产品 > 二极管 - 桥式整流器 > GBU8A
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GBU8A产品简介:
ICGOO电子元器件商城为您提供GBU8A由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 GBU8A价格参考¥3.20-¥4.40。Fairchild SemiconductorGBU8A封装/规格:二极管 - 桥式整流器, Bridge Rectifier 单相 标准 50V 通孔 GBU。您可以下载GBU8A参考资料、Datasheet数据手册功能说明书,资料中有GBU8A 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | RECT BRIDGE GPP 8A 50V GBU桥式整流器 8A Bridge Rectifier |
产品分类 | 桥式整流器分离式半导体 |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,桥式整流器,Fairchild Semiconductor GBU8A- |
数据手册 | |
产品型号 | GBU8A |
PCN封装 | |
二极管类型 | 单相 |
产品 | Single Phase Bridge |
产品种类 | 桥式整流器 |
供应商器件封装 | GBU |
其它名称 | GBU8A-ND |
功率耗散 | 16 W |
包装 | 管件 |
单位重量 | 5.400 g |
商标 | Fairchild Semiconductor |
安装类型 | 通孔 |
安装风格 | Through Hole |
宽度 | 3.56 mm |
封装 | Tube |
封装/外壳 | 4-SIP,GBU |
封装/箱体 | GBU-4 |
峰值反向电压 | 50 V |
工厂包装数量 | 20 |
最大RMS反向电压 | 35 V |
最大反向漏泄电流 | 50 uA |
最大工作温度 | + 150 C |
最大浪涌电流 | 200 A |
最小工作温度 | - 55 C |
标准包装 | 20 |
正向电压下降 | 1 V |
正向连续电流 | 8 A |
电压-峰值反向(最大值) | 50V |
电流-DC正向(If) | 8A |
系列 | GBU8A |
长度 | 22.3 mm |
高度 | 18.8 mm |
GBU8A thru GBU8G Single Phase Glass Passivated V = 50 V - 400 V RRM Silicon Bridge Rectifier I = 8 A O Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High case dielectric strength of 1500 V RMS • Glass passivated chip junction • Ideal for printed circuit boards GBU Package • High surge overload rating • High temperature soldering guaranteed: 260⁰C/ 10 seconds, 0.375 (9.5mm) lead length • Not ESD Sensitive Mechanical Data Case: Molded plastic body over passivated junctions Terminals: Plated leads, solderable per MIL-STD-750 Method 2026. Mounting position: Any Maximum ratings at Tc= 25 °C, unless otherwise specified Parameter Symbol Conditions GBU8A GBU8B GBU8D GBU8G Unit Repetitive peak reverse voltage V 50 100 200 400 V RRM RMS reverse voltage V 35 70 140 280 V RMS DC blocking voltage V 50 100 200 400 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C stg Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Conditions GBU8A GBU8B GBU8D GBU8G Unit Maximum average forward rectified I T = 100 °C 8.0 8.0 8.0 8.0 A current 1,2 O c Peak forward surge current I t = 8.3 ms, half sine 200 200 200 200 A FSM p Maximum instantaneous forward V I = 8 A 1.1 1.1 1.1 1.1 V voltage drop per leg F F Maximum DC reverse current at I Ta = 25 °C 5 5 5 5 μA rated DC blocking voltage per leg R T = 125 °C 500 500 500 500 a Rating for fusing I2t t < 8.3 ms 166 166 166 166 A2sec Typical junction capacitance per C 211 211 211 211 pF leg 3 j R 21 21 21 21 Typical thermal resistance per leg 1,2 ΘJA R 2.2 2.2 2.2 2.2 °C/W ΘJL 1 - Device mounted on 82 mm x 82 mm x 3 mm Al plate heatsink 2 - Recommended mounted position is to bolt down device on a heatsink with silicon thermal compond for maximum heat transfer using #6 screw. 3 - Measured at 1.0 MHz and applied reverse bias of 4.0 V 1 Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
GBU8A thru GBU8G 2 Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
GBU8A thru GBU8G Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Dimensions in inches and (millimeters) 3 Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
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