GBPC1005, GBPC101, GBPC102, GBPC104, GBPC106, GBPC108, GBPC110 www.vishay.com Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES ~ • UL recognition, file number E54214 • Ideal for printed circuit boards ~ e4 • Typical I less than 0.1 μA R • High case dielectric strength ~ • High surge current capability ~ Case Style GBPC1 • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS Package GBPC1 I 3 A General purpose use in AC/DC bridge full wave rectification F(AV) for switching power supply, home appliances, office 50 V, 100 V, 200 V, 400 V, 600 V, VRRM 800 V, 1000 V equipment, industrial automation applications. I 60 A FSM MECHANICAL DATA I 5 μA R Case: GBPC1 V at I = 1.5 A 1.0 V F F T max. 150 °C Molding compound meets UL 94 V-0 flammability rating J Base P/N-E4 - RoHS-compliant, commercial grade Diode variations Quad Terminals: Silver plated leads, solderable per J-STD-002 and JESD22-B102 Polarity: As marked, positive lead by belevled corner Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A GBPC GBPC GBPC GBPC GBPC GBPC GBPC PARAMETER SYMBOL UNIT 1005 101 102 104 106 108 110 Maximum repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS bridge input voltage V 35 70 140 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Maximum average forward TC = 60 °C (1) 3.0 I A rectified output current at T = 25 °C (2) F(AV) 2.0 A Peak forward surge current single sine-wave I 60 A superimposed on rated load FSM Rating for fusing (t < 8.3 ms) I2t 15 A2s Operating junction and storage temperature T , T - 55 to + 150 °C range J STG Notes (1) Unit mounted on 4.0" x 4.0" x 0.11" thick (10.5 cm x 10.5 cm x 0.3 cm) aluminum plate (2) Unit mounted on P.C.B. at 0.375" (9.5 mm) lead length with 0.5" x 0.5" (12 mm x 12 mm) copper pads Revision: 08-Jul-13 1 Document Number: 88611 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

GBPC1005, GBPC101, GBPC102, GBPC104, GBPC106, GBPC108, GBPC110 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A GBPC GBPC GBPC GBPC GBPC GBPC GBPC PARAMETER TEST CONDITIONS SYMBOL UNIT 1005 101 102 104 106 108 110 Maximum instantaneous forward voltage drop per I = 1.5 A V 1.0 V F F diode Maximum DC reverse T = 25 °C 5.0 A current at rated DC blocking I μA R voltage per diode TA = 125 °C 500 Typical junction capacitance 4.0 V, 1 MHz C 21 pF per diode J THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A GBPC GBPC GBPC GBPC GBPC GBPC GBPC PARAMETER SYMBOL UNIT 1005 101 102 104 106 108 110 R 12 Typical thermal resistance (1) (cid:84)JA °C/W R 8.0 (cid:84)JC Note (1) Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #6 screw ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GBPC106-E4/51 2.5 51 100 Paper box (cid:3) RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 5.0 60 Case Temperature, T = 60 °C put Current (A) 43..00 T4(A6In1.0Cl0d0. P HuH.x5clze a 4tx aitRv. et01ese 0 ixsnL. i5kos0 at.xMi1vd 10eo". u3 oTn rchtimnk.g) e Current (A) 4500 SCingle Sine-Wave Out urg 30 ward 2.0 ard S For orw 20 Average 1.0 AP.mC.bBie. nMt oTuenmtipnegrature, TA Peak F 10 1.0 Cycle 0.375" (9.5 mm) Lead Length 0 0 0 50 100 150 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 08-Jul-13 2 Document Number: 88611 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

GBPC1005, GBPC101, GBPC102, GBPC104, GBPC106, GBPC108, GBPC110 www.vishay.com Vishay General Semiconductor 100 100 A) TPJu l=s e2 5W °iCdth = 300 μs Tf =J =1 .205 M °CHz ward Current ( 10 1 % Duty Cycle )Fp( ecnatic Vsig = 50 mVp-p or 1 ap 10 F a s C aneou 0.1 noitcn ant uJ st n I 0.01 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 100 A) )W ent (μ 10 T = 125 °C /C°( e e Curr J cnade 10 s p Rever 1 mI lam ous reh 1 e T an 0.1 tn ant eis Inst TJ = 25 °C narT 0.01 0.1 0 20 40 60 80 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style GBPC1 0.630 (16.00) Hole For #6 Screw 0.590 (14.98) 0.158 (4.01) DIA. 0.445 (11.30) 0.142 (3.61) 0.405 (10.29) AC 0.630 (16.00) 0.445 (11.30) 0.590 (14.98) 0.405 (10.29) AC 0.128 (3.25) 0.094 (2.4) x 45° 0.048 (1.22) 0.040 (1.02) TYP. 0.032 (0.81) DIA. 0.028 (0.71) 0.750 (19.05) MIN. 0.200 (5.08) 0.160 (4.06) Polarity shown on side of case: Positive lead by beveled corner Revision: 08-Jul-13 3 Document Number: 88611 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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