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F Q T 1 March 2013 3 N 0 FQT13N06 6 N N-Channel QFET® MOSFET -C 60 V, 2.8 A, 140 mΩ ha n n e Description Features l M This N-Channel enhancement mode power MOSFET (cid:127) 2.8 A, 60 V, RDS(on)=140 mΩ(Max.) @VGS=10 V, ID=1.4 A O is produced using Fairchild Semiconductor®’s (cid:127) Low Gate Charge (Typ. 5.8 nC) S proprietary planar stripe and DMOS technology. This F advanced MOSFET technology has been especially (cid:127) Low Crss (Typ. 15 pF) E tailored to reduce on-state resistance, and to provide (cid:127) 100% Avalanche Tested T superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. D !! D "" !! "" S G!! "" "" G SOT-223 !! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQT13N06 Unit VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 2.8 A - Continuous (TC = 70°C) 2.24 A IDM Drain Current - Pulsed (Note 1) 11.2 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 85 mJ IAR Avalanche Current (Note 1) 2.8 A EAR Repetitive Avalanche Energy (Note 1) 0.21 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TC = 25°C) 2.1 W - Derate above 25°C 0.017 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, TL 1/8" from case for 5 seconds 300 °C Thermal Characteristics Symbol Parameter Typ Max Unit RθJA Thermal Resistance, Junction-to-Ambient * -- 60 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FQT13N06 Rev. C0

F Electrical Characteristics Q TC = 25°C unless otherwise noted T Symbol Parameter Test Conditions Min Typ Max Unit 1 3 N Off Characteristics 0 6 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V N ∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to -- 0.06 -- V/°C -C / ∆TJ Coefficient 25°C h IDSS VDS = 60 V, VGS = 0 V -- -- 1 µA an Zero Gate Voltage Drain Current VDS = 48 V, TC = 150°C -- -- 10 µA ne IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA l M IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA O S On Characteristics F E VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V T RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.4 A -- 0.11 0.14 Ω gFS Forward Transconductance VDS = 25 V, ID = 1.4 A (Note 4) -- 3.0 -- S Dynamic Characteristics Ciss Input Capacitance V = 25 V, V = 0 V, -- 240 310 pF DS GS Coss Output Capacitance f = 1.0 MHz -- 90 120 pF Crss Reverse Transfer Capacitance -- 15 20 pF Switching Characteristics td(on) Turn-On Delay Time V = 30 V, I = 6.5 A, -- 5 20 ns DD D tr Turn-On Rise Time R = 25 Ω -- 25 60 ns G td(off) Turn-Off Delay Time -- 8 25 ns tf Turn-Off Fall Time ( N o t e 4, 5) -- 15 40 ns Qg Total Gate Charge VDS = 48 V, ID = 13 A, -- 5.8 7.5 nC Qgs Gate-Source Charge VGS = 10 V -- 2.0 -- nC Qgd Gate-Drain Charge ( N o te 4, 5) -- 2.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.2 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.8 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 13 A, -- 39 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/µs ( Note 4) -- 40 -- nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 12.6mH, IAS = 2.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 13A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 5. Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FQT13N06 Rev. C0

F Typical Characteristics Q T 1 3 N 0 6 101 Top : 15 .V0 GVS 101 N 10.0 V - 8.0 V C 7.0 V h 6.0 V 5.5 V a A] 5.0 V A] n n Current [ 100 Bottom : 4.5 V n Current [ 100 150℃ nel M ai ai I, DrD I, DrD 25℃ OS 10-1 ※ 12 N.. 2To5Cte 0=sμ 2:s5 ℃Pulse Test -55℃ ※ 12 N.. V2o5DteS0 sμ= : s2 5PVulse Test FE 10-1 T 10-1 100 101 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2.Transfer Characteristics 500 101 e400 VGS = 10V ΩR [m],DS(ON)Drain-Source On-Resistanc123000000 VGS = 20V ※ Note : TJ = 25℃ I, Reverse Drain Current [A]DR 150℃ 25℃ ※12 N.. V2o5Gte0S sμ= : s0 VPulse Test 0 100 0 10 20 30 40 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 I, Drain Current [A] V , Source-Drain voltage [V] D SD Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 600 12 500 CCCiorssssss === CCCggdsds ++ CCggdd (Cds = shorted) 10 VDS = 30V V = 48V V] DS Capacitance [pF]123400000000 CCCorissssss ※12 N.. Vfo =GteS 1 s= M: 0H Vz V, Gate-Source Voltage [GS 2468 ※ Note : ID = 13 A 0 0 10-1 100 101 0 1 2 3 4 5 6 7 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FQT13N06 Rev. C0

F Typical Characteristics Q (Continued) T 1 3 N 0 1.2 2.5 6 N - 2.0 C BV, (Normalized)DSSSource Breakdown Voltage011...901 ※ Notes : R, (Normalized)DS(ON)ain-Source On-Resistance 11..05 hannel MO Drain- 12.. VIDG =S =25 00 VμA Dr 0.5 ※21 .N. IVoDG t=eS s=1 : .140 A V SFE 0.8 0.0 T -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature 3.0 Operation in This Area is Limited by R DS(on) 2.5 101 100 µs A] 1 ms A]2.0 n Current [ 100 DC 100 m1s0 ms n Current [1.5 ai ai Dr Dr1.0 I, D10-1 I, D ※ Notes : 1. TC = 25 oC 0.5 23.. TSJi n=g l1e5 P0 uolCse 10-2 0.0 10-1 100 101 102 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 102 e s n o D=0.5 p s mal Re 101 00..12 ※ 213 N... DZToθJtuMetJ syC-( tTF:) aC= c= t6o P0r, D℃ MD */=W tZ1/ θMt2JCa(tx). r 0.05 e h T 0.02 Z(t), θJC 100 0.01 single pulse PDM t1t2 10-1 10-5 10-4 10-3 10-2 10-1 100 101 102 103 t , Square Wave Pulse Duration [sec] 1 Figure 11. Transient Thermal Response Curve ©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FQT13N06 Rev. C0

F Q Gate Charge Test Circuit & Waveform T 1 3 N 0 6 N - VV C SSaammee TTyyppee GGSS h 5500KKΩΩ aass DDUUTT QQ an gg 1122VV 220000nnFF 1100VV n 330000nnFF e l VV M VV DDSS GGSS QQggss QQggdd O S F E DDUUTT T 33mmAA CChhaarrggee Resistive Switching Test Circuit & Waveforms VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV DDUUTT GGSS 1100VV tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Unclamped Inductive Switching Test Circuit & Waveform BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) 1100VV DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp ©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FQT13N06 Rev. C0

F Q T 1 3 Peak Diode Recovery dv/dt Test Circuit & Waveforms N 0 6 N - C h DDUUTT ++ a n n VV e DDSS l M __ O S F II E SSDD T LLL DDrriivveerr RR GG SSaammee TTyyppee aass DDUUTT VVDDDD VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp ©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FQT13N06 Rev. C0

F Package Dimensions Q T 1 3 N 0 6 SOT-223 N - C h a n n e X l A M M 8 O 3.00 ±0.10 0.0 ±0.20 SF MAX1.80 5 E 6 T 0. 0 2 0. ± 5 7 1. ) 0 6 0.20 (0. 0.06+–00..0024 0.30 ± ± 50 0) 00 3. 0.6 7. ( 2.30 TYP 0.70 ±0.10 ° ~ 1 0° 0 (0.95) 4.60 ±0.25 (0.95) 0.25+–00..0150 0 2 ±0 0. 46) 89) 6.50 ±0.20 1.6 (0. (0. Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FQT13N06 Rev. C0

F Q T 1 3 N 0 6 N TRADEMARKS - C The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not h intended to be an exhaustive list of all such trademarks. a 2Cool™ FPS™ Sync-Lock™ n AccuPower™ F-PFS™ ® ®* n AX-CAP®* FRFET® PowerTrench® e BitSiC™ Global Power ResourceSM PowerXS™ l TinyBoost™ M Build it Now™ Green Bridge™ Programmable Active Droop™ CorePLUS™ Green FPS™ QFET® TinyBuck™ O CCoRrOePSOSVWOELRT™™ GGmreaexn™ FPS™ e-Series™ QQuSi™et Series™ TTiinnyyCLoaglcic™® SF CTL™ GTO™ RapidConfigure™ TINYOPTO™ E Current Transfer Logic™ IntelliMAX™ ™ TinyPower™ T DEUXPEED® ISOPLANAR™ TinyPWM™ TinyWire™ DEcuoaSl CPAooRl™K® Manadr kBinegtt eSrm™all Speakers Sound Louder SSiagvninaglW oiuser ™world, 1mW/W/kW at a time™ TranSiC® TriFault Detect™ EfficentMax™ MegaBuck™ SmartMax™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SMART START™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® FFaaiirrcchhiilldd® Semiconductor® MMiicllerorDPraivke2™™ SSuTpEeArLFTEHT™® UHC® FACT Quiet Series™ MotionMax™ SuperSOT™-3 Ultra FRFET™ FACT® mWSaver™ SuperSOT™-6 UniFET™ FAST® OptoHiT™ SuperSOT™-8 VCX™ FastvCore™ OPTOLOGIC® SupreMOS® VisualMax™ FETBench™ OPTOPLANAR® SyncFET™ VoltagePlus™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I64 ©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FQT13N06 Rev. C0

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