Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F Q P 9 December 2013 N 9 0 C FQP9N90C / FQPF9N90C / F N-Channel QFET® MOSFET Q P F 900 V, 8.0 A, 1.4 Ω 9 N 9 0 Description Features C This N-Channel enhancement mode power MOSFET is • 8 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, — produced using Fairchild Semiconductor’s proprietary planar I = 4 A D N stripe and DMOS technology. This advanced MOSFET - technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 45 nC) C resistance, and to provide superior switching performance h • Low Crss (Typ. 14 pF) a and high avalanche energy strength. These devices are n suitable for switched mode power supplies, active power • 100% Avalanche Tested n factor correction (PFC), and electronic lamp ballasts. e l Q F E T D ® M O S F E G G T D G S D TO-220 S TO-220F S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FQP9N90C FQPF9N90CT Unit VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 8.0 8.0 * A - Continuous (TC = 100°C) 2.8 2.8 * A IDM Drain Current - Pulsed (Note 1) 32 32 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 900 mJ IAR Avalanche Current (Note 1) 8.0 A EAR Repetitive Avalanche Energy (Note 1) 20.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25°C) 205 68 W - Derate above 25°C 1.64 0.54 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering, TL 1/8" from case for 5 seconds 300 °C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP9N90C FQPF9N90CT Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.61 1.85 °C/W RθJS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W ©2003 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP9N90C / FQPF9N90C Rev. C1

F Package Marking and Ordering Information Q P Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 9 N FQP9N90C FQP9N90C TO-220 Tube N/A N/A 50 units 9 0 FQPF9N90CT FQPF9N90CT TO-220F Tube N/A N/A 50 units C / Electrical Characteristics F TC = 25°C unless otherwise noted. Q Symbol Parameter Test Conditions Min. Typ. Max. Unit P F 9 Off Characteristics N 9 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- -- V 0 ∆ /B ∆VTDJSS BCroeeaffkicdioewntn Voltage Temperature ID = 250 µA, Referenced to 25°C -- 0.99 -- V/°C C — IDSS VDS = 900 V, VGS = 0 V -- -- 10 µA N Zero Gate Voltage Drain Current - VDS = 720 V, TC = 125°C -- -- 10 µA C h IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA a IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA nn e On Characteristics l Q VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V F E RDS(on) SOtna-tRice Dsirsatiann-Sceource VGS = 10 V, ID = 4 A -- 1.12 1.4 Ω T® gFS Forward Transconductance VDS = 40 V, ID = 4 A -- 9.2 -- S M O S Dynamic Characteristics F Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 2100 2730 pF ET Coss Output Capacitance f = 1.0 MHz -- 175 230 pF Crss Reverse Transfer Capacitance -- 14 18 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 450 V, ID = 9.0A, -- 50 110 ns tr Turn-On Rise Time R = 25 Ω -- 120 250 ns G td(off) Turn-Off Delay Time -- 100 210 ns tf Turn-Off Fall Time (Note 4) -- 75 160 ns Qg Total Gate Charge VDS = 720 V, ID = 9.0A, -- 45 58 nC Qgs Gate-Source Charge VGS = 10 V -- 13 -- nC Qgd Gate-Drain Charge (Note 4) -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32.0 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 9 A, -- 550 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/µs -- 6.5 -- µC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 21 mH, IAS = 9 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 9.0 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C. 4.Essentially independent of operating temperature. ©2003 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FQP9N90C / FQPF9N90C Rev. C1

F (cid:18) !(cid:26)(cid:31)(cid:9)(cid:12)(cid:4)(cid:7)(cid:8)(cid:9)(cid:30)(cid:9)(cid:31)(cid:24)(cid:11)(cid:30)(cid:26)(cid:21)(cid:24)(cid:26)(cid:31)(cid:21) Q P 9 N 9 0 C T o p : 1 5 .V0 GVS 108..00 VV / F 101 76..05 VV 101 Q Bottom : 56..50 VV 150oC P A] A] F ain Current [100 ain Current [100 25oC -55oC 9N90 Dr Dr C I, D I, D — ※ Notes : 10-1 12.. T25C 0=μ 2s5 P℃ulse Test ※12 ..N V2o5Dte0S sμ= :s5 0PVulse Test N 10-1 -C 10-1 100 101 222 4 6 8 10 h VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] a n n Figure 1. On-Region Characteristics Figure 2.Transfer Characteristics e l Q F 3.0 E T ® M ΩR [],DS(ON)Drain-Source On-Resistance122...505 VGS = 20VVGS = 10V ※ Note : TJ = 25℃ I, Reverse Drain Current [A]DR110001 150℃ 25℃ ※12 N.. V2o5Gte0S sμ= : s0 VPulse Test OSFET 1.0 10-1 0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I, Drain Current [A] V , Source-Drain voltage [V] D SD Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation with Source Current and Temperature 3500 12 3000 CCCiorssssss === CCCggdsds ++ CCggdd (Cds = shorted) 10 V V=D S4 5=0 1V80V DS 2500 Ciss V] VDS = 720V Capacitance [pF]112050000000 Coss ※12 N.. Vfo =GteS 1 s= M: 0H Vz Gate-Source Voltage [468 500 Crss V, GS2 ※ Note : ID = 9A 0 0 10-1 100 101 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2003 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FQP9N90C / FQPF9N90C Rev. C1

F Typical Characteristics (Continued) Q P 9 N 9 0 C 1.2 3.0 / F 2.5 Q Normalized)akdown Voltage11..01 Normalized)On-Resistance 12..50 PF9N9 BV, (DSSDrain-Source Bre0.9 ※12 N.. IVoDG t=eS s =2 : 500 V μA R, (DS(ON)Drain-Source 01..50 ※ 12 .N. VIoDG t=eS s=4 :.150 A V 0C — N- C 0.8 0.0 -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 h TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] an n Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation e vs Temperature vs Temperature l Q F E T ® 102 Ois pLeimraittieodn biny TRh DisS (oAn)rea 10 µs 102 Ois pLeimraittieodn biny TRh DisS (oAn)rea 10 µs MO 100 µs 100 µs S Drain Current [A]110001 DC1001 0m mss1 ms Drain Current [A]110001 DC 100 m1s0 ms1 ms FET I, D10-1 ※ Notes : I, D10-1 ※ Notes : 132... TSTCJi n ==g l12e55 P0 o uColCse 312... TTSCJin ==g l12e55 P0 o uCoClse 10-2 10-2 100 101 102 103 100 101 102 103 V , Drain-Source Voltage [V] V , Drain-Source Voltage [V] DS DS Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area for FQP9N90C for FQPF9N90CT 8 A]6 ent [ Curr n 4 ai Dr I, D 2 0 25 50 75 100 125 150 T, Case Temperature [℃] C Figure 10. Maximum Drain Current vs Case Temperature ©2003 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FQP9N90C / FQPF9N90C Rev. C1

F Typical Characteristics (Continued) Q P 9 N 9 0 C / F Q 100 P F W] 9 C/ N oe [ D=0.5 9 ns 0 po 0.2 ※ Notes : C al Res 10-1 0.1 132... ZTDθJuMJt Cy-( TtF)C a= c= t0 oP.r6D,1 MD ℃*= Zt/1Wθ/tJ2C M(t)ax. — m er 0.05 PDM N (t), ThC 00..0021 t1t2 -Ch ZJ 10-2 singlepu ls e an n e 10-5 10-4 10-3 10-2 10-1 100 101 l t, Square Wave Pulse Duration [sec] Q 1 F E Figure 11-1. Transient Thermal Response Curve for FQP9N90C T ® M O S 100 D=0.5 F W] E C/ T oponse [ 00..12 ※ 132 N... ZTDoθJtuMeJt Csy-( Tt:F)C a= c= t1 oP.r8D,5 MD ℃*= Zt/1Wθ/tJ2C M(t)ax. Res 10-1 0.05 PDM ermal 0.02 t1t2 h T 0.01 (t), C single pulse ZJ 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t, S q u a re W a ve P u lse D u ra tio n [se c ] 1 Figure 11-2. Transient Thermal Response Curve for FQPF9N90CT ©2003 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FQP9N90C / FQPF9N90C Rev. C1

F Q P 9 N 9 0 C / F VV Q GGSS SSaammee TTyyppee P 5500KKΩΩ aass DDUUTT QQgg F9 1122VV 220000nnFF 1100VV N 330000nnFF 9 0 VV VV DDSS C GGSS QQggss QQggdd — N DDUUTT -C IG = co33nmmsAAt. h a n n CChhaarrggee e l Q Figure 12. Gate Charge Test Circuit & Waveform F E T ® M O S VVDDSS RRLL VVDDSS 9900%% FE T VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 13. Resistive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2003 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FQP9N90C / FQPF9N90C Rev. C1

F Q P 9 N 9 0 C / DDUUTT ++ F Q P F VV 9 DDSS N 9 __ 0 C — IISSDD N LLL -C h a n DDrriivveerr n e RR l GG Q SSaammee TTyyppee aass DDUUTT VVDDDD FE T VV ® GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RRGG M ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd O SSDD S F E T GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VV DDD ===------------------------------------------------------------------------------ GGSS GGGaaattteee PPPuuulllssseee PPPeeerrriiioooddd 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD ddii//ddtt (( DDUUTT )) II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2003 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FQP9N90C / FQPF9N90C Rev. C1

F Q Mechanical Dimensions P 9 N 9 0 C / F Q P F 9 N 9 0 C — N - C h a n n e l Q F E T ® M O S F E T Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003 ©2003 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FQP9N90C / FQPF9N90C Rev. C1

F Q Mechanical Dimensions P 9 N 9 0 C / F Q P F 9 N 9 0 C — N - C h a n n e l Q F E T ® M O S F E T Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2003 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com FQP9N90C / FQPF9N90C Rev. C1

F Q P 9 N 9 0 C / TRADEMARKS F The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not Q intended to be an exhaustive list of all such trademarks. P AccuPower™ F-PFS™ Sync-Lock™ F BAiXtS-CiCA™P®* FGRloFbEaTl P®ower ResourceSM Powtm®erTrench® ®* 9N Build it Now™ GreenBridge™ PowerXS™ TinyBoost® 90 CCoorreePPOLUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TinyBuck® C CROSSVOLT™ Gmax™ QS™ TTiinnyyCLoaglcic™® — CCTurLr™ent Transfer Logic™ GInTteOlli™MAX™ QRaupieidt CSeorniefigs™ure™ TINYOPTO™ N DEUXPEED® ISOPLANAR™ ™ TTiinnyyPPoWwMe™r™ -C Dual Cool™ Marking Small Speakers Sound Louder EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TTirnaynWSiiCre™™ ha EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ n ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* n ® MMiiccrrooPFEakT™™ SSMoluAtRioTn sS fToAr RYTou™r Success™ SerDes™ el Fairchild® MicroPak2™ SPM® Q FFAaiCrcTh iQldu Sieet mSiecroiensd™uctor® MMiollteiorDnMrivaex™™ SSTupEeArLFTEHT™® UHC® FE FACT® mWSaver® SuperSOT™-3 Ultra FRFET™ T FFAasStTvC®ore™ OOpPtToOHLiTO™GIC® SSuuppeerrSSOOTT™™--68 UVCniXF™ET™ M® FETBench™ OPTOPLANAR® SupreMOS® VisualMax™ O FPS™ SyncFET™ VXoSl™tagePlus™ S F E *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2003 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com FQP9N90C / FQPF9N90C Rev. C1

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