Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F Q P F November 2013 6 N 8 FQPF6N80T 0 T — ® N-Channel QFET MOSFET N - 800 V, 3.3 A, 1.95 Ω C h a Description Features n n e This N-Channel enhancement mode power MOSFET is • 3.3 A, 800 V, RDS(on) = 1.95 Ω (Max.) @ VGS = 10 V, l produced using Fairchild Semiconductor’s proprietary I = 1.65 A Q D planar stripe and DMOS technology. This advanced F • Low Gate Charge (Typ. 31 nC) E MOSFET technology has been especially tailored to reduce T on-state resistance, and to provide superior switching • Low Crss (Typ. 14 pF) ® performance and high avalanche energy strength. These • 100% Avalanche Tested M devices are suitable for switched mode power supplies, O • 100% Package Isolation Tested active power factor correction (PFC), and electronic lamp S ballasts. F E T D G G D S TO-220F S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FQPF6N80T Unit VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 3.3 A - Continuous (TC = 100°C) 2.1 A IDM Drain Current - Pulsed (Note 1) 13.2 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 680 mJ IAR Avalanche Current (Note 1) 3.3 A EAR Repetitive Avalanche Energy (Note 1) 5.1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25°C) 51 W - Derate above 25°C 0.41 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering, TL 1/8" from Case for 5 seconds 300 °C Thermal Characteristics Symbol Parameter FQPF6N80T Unit RθJC Thermal Resistance, Junction-to-Case, Max. 2.45 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W ©2002 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQPF6N80T Rev. C1

F Q Package Marking and Ordering Information P F 6 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity N FQPF6N80T FQPF6N80T TO-220F Tube N/A N/A 50 units 8 0 T Electrical Characteristics — TC = 25°C unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit N - C Off Characteristics h a BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 800 -- -- V n n Δ/ B V DΔSTS BCroeeaffkicdioewntn Voltage Temperature ID = 250 μA, Referenced to 25°C -- 0.9 -- V/°C el J Q IDSS VDS = 800 V, VGS = 0 V -- -- 10 μA F Zero Gate Voltage Drain Current E VDS = 640 V, TC = 125°C -- -- 100 μA T IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA ® M IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA O S On Characteristics F E VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 V T RDS(on) SOtna-tRice Dsrisatiann-Sceource VGS = 10 V, ID = 1.65 A -- 1.5 1.95 Ω gFS Forward Transconductance VDS = 50 V, ID = 1.65 A -- 4.3 -- S Dynamic Characteristics Ciss Input Capacitance V = 25 V, V = 0 V, -- 1150 1500 pF DS GS Coss Output Capacitance f = 1.0 MHz -- 125 160 pF Crss Reverse Transfer Capacitance -- 14 18 pF Switching Characteristics td(on) Turn-On Delay Time V = 400 V, I = 5.8 A, -- 30 70 ns DD D tr Turn-On Rise Time R = 25 Ω -- 70 150 ns G td(off) Turn-Off Delay Time -- 65 140 ns tf Turn-Off Fall Time (Note 4) -- 45 100 ns Qg Total Gate Charge VDS = 640 V, ID = 5.8 A, -- 31 nC Qgs Gate-Source Charge VGS = 10 V -- 7.1 -- nC Qgd Gate-Drain Charge (Note 4) -- 15 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 3.3 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 13.2 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.3 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 5.8 A, -- 650 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/μs -- 5.7 -- μC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 117 mH, IAS = 3.3 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 5.8 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. 5. Viso=4000V, t=0.3s in single pulse, UL recognized. ©2002 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FQPF6N80T Rev. C1

F Q Typical Characteristics P F 6 N 8 0 T 101 T o p : 1 5 .V0 GVS 101 — 1 08..00 VV N 7.0 V A] 66..50 VV A] 150oC -C Current [ 100 Bottom : 5.5 V Current [ 100 25oC hann ain ain -55oC e Dr Dr l I, D I, D Q ※ Notes : ※ Notes : F 10-1 12.. 2T5C 0=μ 2s5 P℃ulse Test 12.. 2V5DS0 μ= s5 0PVulse Test ET 10-1 ® 10-1 100 101 2 4 6 8 10 M VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] O S Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics F E T 4 101 R [Ω],DS(ON)urce On-Resistance 23 VGS = 20VVGS = 10V e Drain Current [A] 100 ain-So 1 Revers 150℃ 25℃ Dr ※ Note : TJ = 25℃ I, DR ※ 12 N.. V2o5Gte0S sμ= : s0 VPulse Test 0 10-1 0 4 8 12 16 0.2 0.4 0.6 0.8 1.0 1.2 I, Drain Current [A] V , Source-Drain voltage [V] D SD Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation with Source Current and Temperature 2000 12 1800 CCCiorssssss === CCCggdsds ++ CCggdd (Cds = shorted) 10 VDS = 160V pF]111246000000 Ciss oltage [V] 8 VVDDSS = = 6 44000VV acitance [1080000 Coss ※ Notes : Source V 6 Cap 600 12.. Vf =GS 1 = M 0H Vz ate- 4 C G 400 rss V, GS 2 200 ※ Note : ID = 5.8A 0 0 10-1 100 101 0 5 10 15 20 25 30 35 V , Drain-Source Voltage [V] Q, Total Gate Charge [nC] DS G Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2002 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FQPF6N80T Rev. C1

F Q Typical Characteristics P (continued) F 6 N 8 0 T 1.2 3.0 — e g a olt ce 2.5 N BV, (Normalized)DSSDrain-Source Breakdown V 011...901 ※ 12 N.. VIoDG t=eS s =2 : 500 V μA R, (Normalized)DS(ON)Drain-Source On-Resistan 0112....5050 ※ 21 N.. VIoDG t=eS s =2 : .190 A V -Channel QFET 0.8 0.0 ® -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 M TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] O S Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation F E vs Temperature vs Temperature T 3.5 Operation in This Area is Limited by R DS(on) 3.0 101 100μs A] 1 ms A] 2.5 nt [ 10 ms nt [ Curre 100 DC100 ms Curre 2.0 n n 1.5 ai ai Dr Dr I, D10-1 ※ Notes : I, D1.0 1. TC = 25 oC 0.5 23.. TSJin =g l1e5 P0 uolCse 10-2 0.0 100 101 102 103 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature W] C/ D=0.5 oal Response [mal Response 100 000...0215 ※ 123 N... ZDToθJtuMeJt sCy-( tTF:) Ca= c= t2 oP.r4D,5 MD ℃*= Zt/1Wθ/t2J CM(t)ax. mer 10-1 Z(t), TherZ(t), ThθJCθJC 00..0012 single pulse PDM t1t2 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 Figure 11. Transient Thermal Response Curve ©2002 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FQPF6N80T Rev. C1

F Q P F 6 N 8 0 T — N VVGGSS -C SSaammee TTyyppee h 5500KKΩΩ aass DDUUTT QQ a gg n 1122VV 220000nnFF 1100VV n 330000nnFF e l VV VV DDSS Q GGSS QQ QQ ggss ggdd F E T ® DDUUTT M IG = co33nmmsAAt. O S F CChhaarrggee E T Figure 12. Gate Charge Test Circuit & Waveform VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 13. Resistive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2002 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FQPF6N80T Rev. C1

F Q P F 6 N 8 0 T — DDUUTT ++ N - C h VV a DDSS n n __ e l Q F II E SSDD T LLL ® M O DDrriivveerr S F RR E GG SSaammee TTyyppee T aass DDUUTT VVDDDD VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2002 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FQPF6N80T Rev. C1

F Q Mechanical Dimensions P F 6 N 8 0 T — N - C h a n n e l Q F E T ® M O S F E T Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2002 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FQPF6N80T Rev. C1

F Q P F 6 N 8 0 T TRADEMARKS — The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. N AccuPower™ F-PFS™ Sync-Lock™ -C ABXitS-CiCA™P®* FGRloFbEaTl P®ower ResourceSM Powtm®erTrench® ®* ha Build it Now™ GreenBridge™ PowerXS™ TinyBoost® n CCoorreePPOLUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TinyBuck® ne CCTRLO™SSVOLT™ GGmTOax™™ QQSui™et Series™ TTiinnyyCLoaglcic™® l Q Current Transfer Logic™ IntelliMAX™ RapidConfigure™ TINYOPTO™ F DEUXPEED® ISOPLANAR™ ™ TinyPower™ E Dual Cool™ Marking Small Speakers Sound Louder TinyPWM™ T EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™ ® TranSiC™ EfficentMax™ MegaBuck™ SignalWise™ M TriFault Detect™ ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* O ® MicroFET™ SMART START™ μSerDes™ S MicroPak™ Solutions for Your Success™ F Fairchild® MicroPak2™ SPM® E FFAaiCrcTh iQldu Sieet mSiecroiensd™uctor® MMiollteiorDnMrivaex™™ SSTupEeArLFTEHT™® UHC® T FACT® mWSaver® SuperSOT™-3 Ultra FRFET™ FAST® OptoHiT™ SuperSOT™-6 UniFET™ FastvCore™ OPTOLOGIC® SuperSOT™-8 VCX™ FETBench™ OPTOPLANAR® SupreMOS® VisualMax™ FPS™ SyncFET™ VoltagePlus™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2002 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FQPF6N80T Rev. C1

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