Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F Q P 1 1 November 2013 N 4 0 FQP11N40C / FQPF11N40C C / ® F N-Channel QFET MOSFET Q 400 V, 10.5 A, 530 mΩ PF 1 1 Features Description N 4 • 10.5 A, 400 V, R = 530 mΩ (Max.) @ V = 10 V, This N-Channel enhancement mode power MOSFET is 0 DS(on) GS C ID = 5.25 A produced using Fairchild Semiconductor’s proprietary — • Low Gate Charge (Typ. 28 nC) planar stripe and DMOS technology. This advanced N • Low Crss (Typ. 85 pF) MOSFET technology has been especially tailored to reduce - C on-state resistance, and to provide superior switching • 100% Avalanche Tested h performance and high avalanche energy strength. These a n devices are suitable for switched mode power supplies, n active power factor correction (PFC), and electronic lamp e l ballasts. Q F E T ® D M O S F E T G G D G S TO-220 DS TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FQP11N40C FQPF11N40C Unit V Drain to Source Voltage 400 V DSS -Continuous (T = 25oC) 10.5 10.5 * A I Drain Current C D -Continuous (T = 100oC) 6.6 6.6 * A C IDM Drain Current - Pulsed (Note 1) 42 42 * A V Gate to Source Voltage ± 30 V GSS EAS Single Pulsed Avalanche Energy (Note 2) 360 mJ IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (T = 25oC) 135 44 W P Power Dissipation C D - Derate above 25oC 1.07 0.35 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum Lead Temperature for Soldering Purpose, T 300 °C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP11N40C FQPF11N40C Unit RθJC Thermal Resistance, Junction to Case, Max 0.93 2.86 °C/W RθJA Thermal Resistance, Junction to Ambient, Max 62.5 62.5 °C/W ©2003 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP11N40C / FQPF11N40C Rev. C1

F Q Package Marking and Ordering Information P 1 1 Device Marking Device Package Reel Size Tape Width Quantity N FQP11N40C FQP11N40C TO-220 Tube N/A 50 units 4 0 FQPF11N40C FQPF11N40C TO-220F Tube N/A 50 units C / Electrical Characteristics T = 25oC unless otherwise noted. F C Q Symbol Parameter Test Conditions Min Typ Max Unit P F 1 Off Characteristics 1 N BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 400 -- -- V 4 ΔBVDSS Breakdown Voltage Temperature Coeffi- I = 250 μA, Referenced to 25°C -- 0.54 -- V/°C 0C / ΔTJ cient D — IDSS Zero Gate Voltage Drain Current VVDDSS == 430200 VV,, VTCG S= =1 205 V°C ---- ---- 110 μμAA N- C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA h IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA an n On Characteristics e l VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V Q F RDS(on) Static Drain-Source V = 10 V, I = 5.25 A -- 0.43 0.53 Ω E On-Resistance GS D T ® gFS Forward Transconductance VDS = 40 V, ID = 5.25 A -- 7.1 -- S M O Dynamic Characteristics S Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 840 1090 pF FE Coss Output Capacitance f = 1.0 MHz -- 250 325 pF T Crss Reverse Transfer Capacitance -- 85 110 pF Switching Characteristics td(on) Turn-On Delay Time V = 200 V, I = 10.5 A, -- 14 40 ns DD D tr Turn-On Rise Time R = 25 Ω -- 89 190 ns G td(off) Turn-Off Delay Time -- 81 170 ns tf Turn-Off Fall Time (Note 4) -- 81 170 ns Qg Total Gate Charge VDS = 320 V, ID = 10.5 A, -- 28 35 nC Qgs Gate-Source Charge VGS = 10 V -- 4 -- nC Qgd Gate-Drain Charge (Note 4) -- 15 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 42 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 10.5 A, -- 290 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/μs -- 2.4 -- μC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 5.7 mH, IAS = 10.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2003 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FQP11N40C / FQPF11N40C Rev. C1

F Q Typical Performance Characteristics P 1 1 N 4 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0 C / VGS F Top : 15.0 V 10.0 V Q 8.0 V Current [A] 101 B o t t o m : 47655.....50050 VVVVV Current [A] 101 25°C 150°C -55°C PF11N40 ain 100 ain 100 C Dr Dr — I, D Notes : I, D 1. 250μs Pulse Test Notes : N 2. TC = 25°C 12.. V25DS0 μ=s 4 P0uVlse Test -C 10-1 10-1 h 100 101 2 4 6 8 10 a V , Drain-Source Voltage [V] V , Gate-Source Voltage [V] n DS GS n e l Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Q F Drain Current and Gate Voltage Variation vs. Source Current E and Temperatue T ® M 2.0 O S ΩR [],DS(ON)urce On-Resistance 11..05 VGS = 10V e Drain Current [A] 110001 FET o s Drain-S 0.5 VG NS o=te 2 :0 TVJ = 25°C I, ReverDR 150°C25°C N 12o..t eV2s5G 0S: μ=s 0 PVulse Test 10-1 0 5 10 15 20 25 30 35 40 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I, Drain Current [A] V , Source-Drain voltage [V] D SD Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 2000 12 C = C + C (C = shorted) iss gs gd ds 1800 C = C + C oss ds gd 1600 Crss = Cgd V] 10 VDS = 100V acitance [pF] 111024800000000 CCoissss Source Voltage [ 68 VDS V= D4S0 =0 V250V Cap 600 Crss N 1o.t eVsG S; = 0 V Gate- 4 400 2. f = 1 MHz , GS 2 V 200 Note : I = 10.5A D 0 0 10-1 100 101 0 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] ©2003 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FQP11N40C / FQPF11N40C Rev. C1

F Q Typical Performance Characteristics P (Continued) 1 1 N 4 Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation 0 vs. Temperature vs. Temperature C / F 1.2 3.0 Q e P g a F olt ce 2.5 1 ormalized)eakdown V11..01 ormalized)On-Resistan 12..50 1N40C BV, (NDSSDrain-Source Br0.9 N 12o..t eIVDsG =S: =2 500 VμA R, (NDS(ON)Drain-Source 01..50 N 12o..t eVIDsG =S: =5 .1205 VA — N-Cha 0.8 0.0 n -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 n TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] el Q F E Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area T of FQP11N40C of FQPF11N40C ® M O S 102 Ois pLeimraittieodn biny TRh DisS (oAn)rea 102 Ois pLeimraittieodn biny TRh DisS (oAn)rea FE 10 μs 10 μs T A] 100 μs A] 100 μs n Current [ 101 100 m1s0 ms1 ms n Current [ 101 100 m1s0 ms1 ms I, DraiD 100 Notes : DC I, DraiD 100 Notes : DC 123... STTCJin ==g l12e55 P0°C°uClse 123... STTCJin ==g l12e55 P°°CCulse 10-1 10-1 100 101 102 103 100 101 102 103 V , Drain-Source Voltage [V] V , Drain-Source Voltage [V] DS DS Figure 10. Maximum Drain Current 12 10 nt [A] 8 e Curr 6 n ai Dr 4 I, D 2 0 25 50 75 100 125 150 T, Case Temperature [°C] C ©2003 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FQP11N40C / FQPF11N40C Rev. C1

F Q Typical Performance Characteristics (Continued) P 1 1 N Figure 11-1. Transient Thermal Response Curve of FQP11N40C 4 0 C / 100 F W] D=0.5 QP C/ F oe [nse 0.2 1 Z(t), Thermal ResponsZ(t), Thermal RespoθJCθJC 1100--21 0000....1000521 single pulse N 132o...t eZTDPsθJuDJM C:t My(-t )TF =Ca c=0t o.P9rt3D,1 M°tD2C *= /ZWt1θ/Jt C2M(ta)x. 1N40C — N-C h 10-5 10-4 10-3 10-2 10-1 100 101 an t , Square Wave Pulse Duration [sec] n 1 e l Q F E Figure 11-2. Transient Thermal Response Curve of FQPF11N40C T ® M O S W] D=0.5 FE oResponse [C/al Response 100 000...0215 ※ 123 N... ZDToθJtuMeJt sCy(-t T)F: C=a c=2t o.P8rD6, M D℃ *= /ZtW1θ/t2J CM(t)ax. T mal erm 10-1 0.02 Z(t), TherZ(t), ThθJCθJC 10-2 0.01 single pulse PDM t1t2 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 ©2003 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FQP11N40C / FQPF11N40C Rev. C1

F Q P 1 1 Figure 12. Gate Charge Test Circuit & Waveform N 4 0 C / F Q VV P GGSS SSaammee TTyyppee F 5500KKΩΩ aass DDUUTT QQ 11 gg 1122VV 220000nnFF 1100VV N 330000nnFF 4 0 VV C VV DDSS GGSS QQggss QQggdd — N - DDUUTT C IG = co33nmmsAAt. ha n n e CChhaarrggee l Q F E T ® Figure 13. Resistive Switching Test Circuit & Waveforms M O S VVDDSS RRLL VVDDSS 9900%% FET VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp ©2003 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FQP11N40C / FQPF11N40C Rev. C1

F Q P 1 1 Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms N 4 0 C / F DDUUTT ++ Q P F VV 1 DDSS 1 N 4 __ 0 C — IISSDD N LLL - C h a n DDrriivveerr n RR e GG l SSaammee TTyyppee Q aass DDUUTT VVDDDD F E T VV ® GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG M ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD O S F E T GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp ©2003 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FQP11N40C / FQPF11N40C Rev. C1

F Q Mechanical Dimensions P 1 1 N 4 0 C / F Q P F 1 1 N 4 0 C — N - C h a n n e l Q F E T ® M O S F E T Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003 ©2003 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FQP11N40C / FQPF11N40C Rev. C1

F Q Mechanical Dimensions P 1 1 N 4 0 C / F Q P F 1 1 N 4 0 C — N - C h a n n e l Q F E T ® M O S F E T Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2003 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com FQP11N40C / FQPF11N40C Rev. C1

F Q P 1 1 N 4 0 C TRADEMARKS / The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not F intended to be an exhaustive list of all such trademarks. Q AccuPower™ F-PFS™ Sync-Lock™ P AX-CAP®* FRFET® ® ®* F BitSiC™ Global Power ResourceSM PowtmerTrench® 1 1 Build it Now™ GreenBridge™ PowerXS™ TinyBoost® N CCoorreePPOLUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TTiinnyyBCuaclck™® 40 CROSSVOLT™ Gmax™ QS™ TinyLogic® C CTL™ GTO™ Quiet Series™ TINYOPTO™ — Current Transfer Logic™ IntelliMAX™ RapidConfigure™ DEUXPEED® ISOPLANAR™ ™ TinyPower™ TinyPWM™ N Dual Cool™ Marking Small Speakers Sound Louder EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™ -C TranSiC™ EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ h ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* a ® MMiiccrrooPFEakT™™ SSMoluAtRioTn sS fToAr RYTou™r Success™ μSerDes™ nn Fairchild® MicroPak2™ SPM® el FFFFFFAaAAEasiSCTCrtcBTvTThC®e® iQlnodcur eShie™™et mSiecroiensd™uctor® OOOMMmpPPiWollttTTeoiSoOrOHDnaPLiMvTrOiLev™aAreGx®N™™ICA®R® SSSSSSTuuuuupppppEeeeerAerrrrLSSSFMTEOOOOHTTTTS™®™™™®---368 UUUVViCHlnstriXuCFaa™ E®FlMTR™aFxE™T™ QFET ® FPS™ SyncFET™ VoltagePlus™ M XS™ O S F *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2003 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com FQP11N40C / FQPF11N40C Rev. C1

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