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F Q P www.onsemi.com 8 N 9 0 C FQP8N90C / FQPF8N90C / F N-Channel QFET® MOSFET Q P F 900 V, 6.3 A, 1.9 Ω 8 N 9 0 Description Features C This N-Channel enhancement mode power MOSFET is • 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, — produced using ON Semiconductor’s proprietary planar I = 3.15 A D N stripe and DMOS technology. This advanced MOSFET - technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 35 nC) C resistance, and to provide superior switching performance h • Low Crss (Typ. 12 pF) a and high avalanche energy strength. These devices are n suitable for switched mode power supplies, active power • 100% Avalanche Tested n factor correction (PFC), and electronic lamp ballasts. e l Q F E T D ® M O S F E G G T D G S D TO-220 S TO-220F S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FQP8N90C FQPF8N90C Unit VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 6.3 6.3 * A - Continuous (TC = 100°C) 3.8 3.8 * A IDM Drain Current - Pulsed (Note 1) 25 25 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 850 mJ IAR Avalanche Current (Note 1) 6.3 A EAR Repetitive Avalanche Energy (Note 1) 17.1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25°C) 171 60 W - Derate above 25°C 1.37 0.48 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering, TL 300 °C 1/8" from Case for 5 Seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP8N90C FQPF8N90C Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.73 2.08 °C/W RθCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W Semiconductor Components Industries, LLC, 2016 P u b l ication Order Number: December, 2016, Rev. 1.5 FQP8N90C / FQPF8N60C/D 1

F Package Marking and Ordering Information Q P Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 8 N FQP8N90C FQP8N90C TO-220 Tube N/A N/A 50 units 9 0 FQPF8N90C FQPF8N90C TO-220F Tube N/A N/A 50 units C / Electrical Characteristics F TC = 25°C unless otherwise noted. Q Symbol Parameter Test Conditions Min. Typ. Max. Unit P F 8 Off Characteristics N 9 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- -- V 0 C ∆ /B ∆VTDJSS BCroeeaffkicdioewntn Voltage Temperature ID = 250 µA, Referenced to 25°C -- 0.95 -- V/°C — IDSS VDS = 900 V, VGS = 0 V -- -- 10 µA N Zero Gate Voltage Drain Current - VDS = 720 V, TC = 125°C -- -- 100 µA C h IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA a IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA nn e l On Characteristics Q VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V F E RDS(on) SOtna-tRice Dsrisatiann-Sceource VGS = 10 V, ID = 3.15 A -- 1.6 1.9 Ω T® gFS Forward Transconductance VDS = 50 V, ID = 3.15 A -- 5.5 -- S M O S Dynamic Characteristics F E Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1600 2080 pF T Coss Output Capacitance f = 1.0 MHz -- 130 170 pF Crss Reverse Transfer Capacitance -- 12 15 pF Switching Characteristics td(on) Turn-On Delay Time V = 450 V, I = 8 A, -- 40 90 ns DD D tr Turn-On Rise Time R = 25 Ω -- 110 230 ns G td(off) Turn-Off Delay Time -- 70 150 ns tf Turn-Off Fall Time (Note 4) -- 70 150 ns Qg Total Gate Charge VDS = 720 V, ID = 8 A, -- 35 45 nC Qgs Gate-Source Charge VGS = 10 V -- 10 -- nC Qgd Gate-Drain Charge (Note 4) -- 14 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 6.3 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 25 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.3 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 8 A, -- 530 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/µs -- 5.8 -- µC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 40 mH, IAS = 6.3 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. I SD ≤ 8 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. www.onsemi.com 2

F (cid:18) !(cid:26)(cid:31)(cid:9)(cid:12)(cid:4)(cid:7)(cid:8)(cid:9)(cid:30)(cid:9)(cid:31)(cid:24)(cid:11)(cid:30)(cid:26)(cid:21)(cid:24)(cid:26)(cid:31)(cid:21) Q P 8 N 9 0 C T o p : 1 5 .V0 GVS / 10.0 V 8.0 V F 101 76..05 VV 101 Q 6.0 V P urrent [A] Bottom :: .5 V urrent [A] 150oC F8N Drain C100 Drain C100 25oC -55oC 90C I, D I, D — ∝ Notes : 10-1 12.. 2T5C 0=レ 2s5 ∩Pulse Test ∝ 12 N.. V2o5DteS0 sレ= : s5 0PVulse Test N- 10-1 C 10-1 100 101 2 4 6 8 10 h VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] an n Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics e l Q F E 4.0 T ® ヘ],R [DS(ON)ource On-Resistance233...505 VGS = 20VVGS = 10V se Drain Current [A]110001 MOSFET Drain-S12..50 ∝ Note : TJ = 25∩ I, ReverDR 150∩ 25∩ ∝12 N.. 2Vo5Gte0S sレ= : s0 VPulse Test 1.0 10-1 0 5 10 15 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I, Drain Current [A] V , Source-Drain voltage [V] D SD Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation with Source Current and Temperature 3000 12 2500 CCCirossssss === CCCggdsds ++ CCggdd (Cds = shorted) 10 VDS = 180V V] VDS = 450V nce [pF]12500000 Ciss ce Voltage [ 68 VDS = 720V acita Coss Sour Cap1000 ∝21 N.. fVo =GteS 1 s= M: 0H Vz Gate- 4 500 Crss V, GS2 ∝ Note : ID = 8A 0 0 10-1 100 101 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 3

F Typical Characteristics (Continued) Q P 8 N 9 0 C 1.2 3.0 age / F olt ce 2.5 Q BV, (Normalized)DSSDrain-Source Breakdown V011...901 ∝ 12 N.. VIoDG t=eS s =2 : 500 V レA R, (Normalized)DS(ON)Drain-Source On-Resistan 0112....5050 ∝ 12 N.. VIoDG t=eS s =3 : .1105 VA PF8N90C — N- C 0.8 0.0 -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 h TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] an n Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation e l vs Temperature vs Temperature Q F E T ® 102 Ois pLeimraittieodn biny TRh DisS (oAn)rea 102 Ois pLeimraittieodn biny TRh DisS (oAn)rea M O Current [A] 101 10 m1s m1s00 µs Current [A] 101 10 m1s m1s00 µs SFET Drain 100 DC Drain 100 DC100 ms I, D10-1 ∝213 N... TSToCJitn e ==gs l1 2e:55 P0 o uColCse I, D10-1 ∝ 231 N... STToCJitn e ==gs l1 2e:55 P0 o uColCse 10-2 10-2 100 101 102 103 100 101 102 103 V , Drain-Source Voltage [V] V , Drain-Source Voltage [V] DS DS Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area for FQP8N90C for FQPF8N90C 8 6 A] nt [ e Curr4 n ai Dr I, D2 0 25 50 75 100 125 150 T, Case Temperature [∩] C Figure 10. Maximum Drain Current vs Case Temperature www.onsemi.com 4

F Typical Characteristics (Continued) Q P 8 N 9 0 C / 100 F Q W] P C/ D=0.5 F oe [ 8 ns 0.2 N ermal Respo 10-1 00..015 ∝ 231 N... DTZPoヨJutDMeJt MCys-( Tt:F)C a= c= t0 oP.r7D,3 MD ∩*= Zt/1Wヨ/tJ2C M(t)ax. 90C — Z(t), ThJC 10-2 00..0021 single pulse t1t2 N-Ch a 10-5 10-4 10-3 10-2 10-1 100 101 n t , Square Wave Pulse Duration [sec] n 1 e l Q Figure 11-1. Transient Thermal Response Curve for FQP8N90C F E T ® M O S F E T C/W] 100 D=0.5 oe [ 0.2 al Respons 10-1 00..015 ∝ 231 N... DTZoヨJtuMeJt Csy-( Tt:F)C a= c= t2 oP.r0D,8 MD ∩*= Zt/1Wヨ/tJ2C M(t)ax. erm 0.02 PDM (t), ThC 0.01 t1t2 ZJ 10-2 singlee puse 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 Figure 11-2. Transient Thermal Response Curve for FQPF8N90C www.onsemi.com 5

F Q P 8 N 9 0 C / F VV Q GGSS SSaammee TTyyppee P 5500KKΩΩ aass DDUUTT QQgg F8 1122VV 220000nnFF 1100VV N 330000nnFF 9 0 VV VV DDSS C GGSS QQggss QQggdd — N DDUUTT -C IG = co33nmmsAAt. h a n n CChhaarrggee e l Q Figure 12. Gate Charge Test Circuit & Waveform F E T ® M O S VVDDSS RRLL VVDDSS 9900%% FE T VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 13. Resistive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6

F Q P 8 N 9 0 C / DDUUTT ++ F Q P F VV 8 DDSS N 9 __ 0 C — IISSDD N LLL -C h a n DDrriivveerr n e RR l GG Q SSaammee TTyyppee aass DDUUTT VVDDDD FE T VV ® GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RRGG M ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd O SSDD S F E T GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VV DDD ===------------------------------------------------------------------------------ GGSS GGGaaattteee PPPuuulllssseee PPPeeerrriiioooddd 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD ddii//ddtt (( DDUUTT )) II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7

SUPPLIER"B"PACKAGE SHAPE (cid:145)(cid:23)(cid:17)(cid:19)(cid:19) 3.50 10.67 SUPPLIER"A"PACKAGE 9.65 E SHAPE 3.40 2.50 16.30 IFPRESENT,SEENOTE"D" 13.90 E 16.51 9.40 15.42 8.13 E 1 2 3 2.46 4.10 C 2.70 14.04 2.13 12.70 2.06 FRONTVIEWS 4.70 1.62 1.62 4.00 1.42H 2.67 1.10 2.40 "A1" 8.65 1.00 SEENOTE"F" 7.59 0.55 (cid:24)(cid:131) (cid:24)(cid:131) OPTIONAL 6.69 (cid:22)(cid:131) (cid:22)(cid:131) 6.06 CHAMFER E 14.30 11.50 NOTE"I" BOTTOMVIEW NOTES: A)REFERENCEJEDEC,TO-220,VARIATIONAB B)ALLDIMENSIONSAREINMILLIMETERS. C)DIMENSIONSCOMMONTOALLPACKAGE SUPPLIERSEXCEPTWHERENOTED. 3 2 1 D)LOCATIONOFMOLDEDFEATUREMAYVARY (LOWERLEFTCORNER,LOWERCENTER ANDCENTEROFTHEPACKAGE) EDOESNOTCOMPLYJEDECSTANDARDVALUE. F)"A1"DIMENSIONSASBELOW: SINGLEGAUGE=0.51-0.61 DUALGAUGE=1.10-1.45 G)DRAWINGFILENAME:TO220B03REV9 HPRESENCEISSUPPLIERDEPENDENT I)SUPPLIERDEPENDENTMOLDLOCKINGHOLES INHEATSINK. 0.60 0.36 2.85 BACKVIEW 2.10 SIDEVIEW

10.36 2.66 A B B 9.96 2.42 3.28 3.40 7.00 3.08 0.70 3.20 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45° 16.07 B 15.67 16.00 15.60 (3.23) B 3 1 1.47 2.96 2.14 1.24 2.56 0.90 10.05 0.70 9.45 0.50 M A 30° 0.45 0.60 0.25 B 0.45 2.54 2.54 4.90 B 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5

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