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F Q P 3 November 2013 4 N 2 FQP34N20 0 — ® N N-Channel QFET MOSFET - C 200 V, 31 A, 75 mΩ h a n n Description Features e l This N-Channel enhancement mode power MOSFET is • 31 A, 200 V, RDS(on) = 75 mΩ (Max.) @ VGS = 10 V, Q produced using Fairchild Semiconductor’s proprietary I = 15.5 A F D planar stripe and DMOS technology. This advanced E • Low Gate Charge (Typ. 60 nC) T MOSFET technology has been especially tailored to reduce ® on-state resistance, and to provide superior switching • Low Crss (Typ. 55 pF) M performance and high avalanche energy strength. These • 100% Avalanche Tested O devices are suitable for switched mode power supplies, S active power factor correction (PFC), and electronic lamp F ballasts. E T D G G D S TO-220 S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FQP34N20 Unit VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 31 A - Continuous (TC = 100°C) 20 A IDM Drain Current - Pulsed (Note 1) 124 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 640 mJ IAR Avalanche Current (Note 1) 31 A EAR Repetitive Avalanche Energy (Note 1) 18 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 180 W - Derate above 25°C 1.43 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering, TL 1/8" from Case for 5 seconds 300 °C Thermal Characteristics Symbol Parameter FQP34N20 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.7 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W ©2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP34N20 Rev. C1

F Q Package Marking and Ordering Information P 3 4 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity N FQP34N20 FQP34N20 TO-220 Tube N/A N/A 50 units 2 0 — Electrical Characteristics TC = 25°C unless otherwise noted. N Symbol Parameter Test Conditions Min Typ Max Unit -C h Off Characteristics a n BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 200 -- -- V ne Δ/ B ΔVTDSS BCroeeaffkicdioewntn Voltage Temperature ID = 250 μA, Referenced to 25°C -- 0.2 -- V/°C l Q J F IDSS VDS = 200 V, VGS = 0 V -- -- 1 μA E Zero Gate Voltage Drain Current T VDS = 160 V, TC = 125°C -- -- 10 μA ® IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA M IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA O S F On Characteristics E T VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 V RDS(on) SOtna-tRice Dsrisatiann-Sceource VGS = 10 V, ID = 15.5 A -- 0.06 0.075 Ω gFS Forward Transconductance VDS = 40 V, ID = 15.5 A -- 25 -- S Dynamic Characteristics Ciss Input Capacitance V = 25 V, V = 0 V, -- 2400 3100 pF DS GS Coss Output Capacitance f = 1.0 MHz -- 430 560 pF Crss Reverse Transfer Capacitance -- 55 70 pF Switching Characteristics td(on) Turn-On Delay Time V = 100 V, I = 34 A, -- 40 90 ns DD D tr Turn-On Rise Time R = 25 Ω -- 280 570 ns G td(off) Turn-Off Delay Time -- 125 260 ns tf Turn-Off Fall Time -- 115 240 ns Qg Total Gate Charge VDS = 160 V, ID = 34 A, -- 60 78 nC Qgs Gate-Source Charge VGS = 10 V -- 17 -- nC Qgd Gate-Drain Charge -- 27 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 31 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 124 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 31 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 34 A, -- 150 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/μs -- 0.95 -- μC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 1.0 mH, IAS = 31 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 34 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2000 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FQP34N20 Rev. C1

F Q Typical Characteristics P 3 4 N 2 0 — 102 T o p : 1 V5 GVS 102 N 10 V 87..00 VV -C A] 6.5 V A] h urrent [101 B o t t o m : 65..05 VV urrent [ 101 150℃ ann Drain C Drain C 100 25℃ -55℃ el Q I , D ※ Notes : I , D ※ Notes : FE 100 12.. 2T5C 0=μ 2s5 P℃ulse Test 12.. V25DS0 μ= s4 0PVulse Test T® 10-1 100 101 10-12 4 6 8 10 M VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] OS F Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics E T 0.30 102 e A] ΩR [],DS(on)ource On-Resistanc000...122505 VGS =V 2GS0 V= 10V erse Drain Current [ 101 Drain-S00..0150 ※ Note : TJ = 25℃ I , RevDR 100 150℃ 25℃ ※ 12 N.. V2o5Gte0S sμ= : s0 VPulse Test 0.00 10-1 0 20 40 60 80 100 120 140 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 I , Drain Current [A] V , Source-Drain Voltage [V] D SD Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 5000 12 CCCiorssssss === CCCggdsds ++ CCggdd (Cds = shorted) 10 VV =D S1 =00 4V0V 4000 V] DS e [ VDS = 160V nce [pF] 3000 CCoissss ce Voltag 68 Capacita 2000 ※ 12 N.. Vfo =GteS 1 s= M: 0H Vz ate-Sour 4 C G 1000 rss V, GS 2 ※ Note : ID = 34 A 0 0 10-1 100 101 0 10 20 30 40 50 60 70 V , Drain-Source Voltage [V] Q, Total Gate Charge [nC] DS G Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2000 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FQP34N20 Rev. C1

F Q Typical Characteristics P (continued) 3 4 N 2 0 — 1.2 2.5 ge N a olt ce 2.0 -C BV, (Normalized)DSSDrain-Source Breakdown V 011...901 ※ 12 N.. VIoDG t=eS s =2 : 500 V μA R, (Normalized)DS(ON)Drain-Source On-Resistan 011...505 ※ 12 N.. IVoDG t=eS s =1 : 71 0A V hannel QFET® 0.8 0.0 M -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 O T, Junction Temperature [oC] T, Junction Temperature [oC] J J S F E Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation T vs. Temperature vs. Temperature 35 Operation in This Area is Limited by R DS(on) 30 102 A] 100 μs A] 25 nt [ 1 ms nt [ urre 101 10 ms urre 20 n C DC n C 15 ai ai Dr Dr I, D 100 ※ Notes : I, D10 1. T = 25 oC 23.. TSCJin =g l1e5 P0 uolCse 5 10-1 0 100 101 102 25 50 75 100 125 150 V , Drain-Source Voltage [V] T, Case Temperature [℃] DS C Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature W] 100 C/ oe [nse D=0.5 so np poes 0.2 ※ Notes : mal Resermal R 10-1 00..015 123... ZDTθJuMJt yC-( FtT)a C= c= t0 oP.r7,D MD℃ *=/ WtZ1/θt 2MJC(at)x. Z(t), TherZ(t), ThθJCθJC 10-2 00..0021 single pulse PDM t1t2 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FQP34N20 Rev. C1

F Q P 3 4 N 2 0 — N - C VVGGSS h SSaammee TTyyppee a 5500KKΩΩ aass DDUUTT QQ n gg n 1122VV 220000nnFF 1100VV e 330000nnFF l Q VV VV DDSS F GGSS QQggss QQggdd E T ® DDUUTT M O IG = co33nmmsAAt. S F E CChhaarrggee T Figure 12. Gate Charge Test Circuit & Waveform VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 13. Resistive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2000 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FQP34N20 Rev. C1

F Q P 3 4 N 2 0 — N DDUUTT ++ - C h a VV n DDSS n e __ l Q F E II T SSDD ® LLL M O S DDrriivveerr F E RR T GG SSaammee TTyyppee aass DDUUTT VVDDDD VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2000 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FQP34N20 Rev. C1

F Q Mechanical Dimensions P 3 4 N 2 0 — N - C h a n n e l Q F E T ® M O S F E T Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003 ©2000 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FQP34N20 Rev. C1

F Q P 3 4 N 2 0 — TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not N intended to be an exhaustive list of all such trademarks. - C AccuPower™ F-PFS™ Sync-Lock™ h ABXitS-CiCA™P®* FGRloFbEaTl P®ower ResourceSM Powtm®erTrench® ®* an Build it Now™ GreenBridge™ PowerXS™ TinyBoost® n CCCCoToRrrLOee™PPSOLSUVWSOE™LRT™™ GGGGrrmTeeOaeex™nn™ FFPPSS™™ e-Series™ PQQQrFSuoiE™egTtr a®Smemrieasb™le Active Droop™ TTTiiinnnyyyBCLouagclcikc™®® el QF Current Transfer Logic™ IntelliMAX™ RapidConfigure™ TINYOPTO™ E DEUXPEED® ISOPLANAR™ ™ TinyPower™ T TinyPWM™ ® Dual Cool™ Marking Small Speakers Sound Louder EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™ M TranSiC™ EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ O ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* S ® MicroFET™ SMART START™ μSerDes™ F MicroPak™ Solutions for Your Success™ E Fairchild® MicroPak2™ SPM® T FFAaiCrcTh iQldu Sieet mSiecroiensd™uctor® MMiollteiorDnMrivaex™™ SSTupEeArLFTEHT™® UHC® FACT® mWSaver® SuperSOT™-3 Ultra FRFET™ FAST® OptoHiT™ SuperSOT™-6 UniFET™ FastvCore™ OPTOLOGIC® SuperSOT™-8 VCX™ FETBench™ OPTOPLANAR® SupreMOS® VisualMax™ FPS™ SyncFET™ VoltagePlus™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2000 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FQP34N20 Rev. C1

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