Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F Q I 5 N 6 November 2013 0 C FQI5N60C — N N-Channel QFET® MOSFET -C h 600 V, 4.5 A, 2.5 Ω a n n e Features Description l Q • 4.5 A, 600 V, R = 2.5 Ω (Max.) @V = 10 V, I = 2.1 A This N-Channel enhancement mode power MOSFET is F DS(on) GS D E • Low Gate Charge (Typ. 15 nC) produced using Fairchild Semiconductor’s proprietary T planar stripe and DMOS technology. This advanced ® • Low Crss (Typ. 6.5 pF) M MOSFET technology has been especially tailored to reduce • 100% Avalanche Tested O on-state resistance, and to provide superior switching S performance and high avalanche energy strength. These F E devices are suitable for switched mode power supplies, T active power factor correction (PFC), and electronic lamp ballasts. D G G DS I2-PAK S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FQI5N60CTU Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 4.5 A - Continuous (TC = 100°C) 2.6 A IDM Drain Current - Pulsed (Note 1) 18 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy (Note 1) 10 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (TC = 25°C) 100 W D - Derate above 25°C 0.8 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, TL 1/8" from case for 5 seconds 300 °C Thermal Characteristics Symbol Parameter FQI5N60CTU Unit RθJC Thermal Resistance, Junction-to-Case, Max. 1.25 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 ©2003 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQI5N60C Rev. C1

F Q Package Marking and Ordering Information I 5 N Device Marking Device Package Reel Size Tape Width Quantity 6 FQI5N60C FQI5N60CTU I2-PAK Tube N/A 50 units 0C — Electrical Characteristics N T = 25°C unless otherwise noted. C - C Symbol Parameter Test Conditions Min Typ Max Unit h a n Off Characteristics n e BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 600 -- -- V l Q Δ/ B V DΔSTSJ BCroeeaffkicdioewntn Voltage Temperature ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C FE T IDSS Zero Gate Voltage Drain Current VVDDSS == 640800 VV,, VTCG S= =1 205 V°C ---- ---- 110 μμAA M® IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA O S IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA F E T On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V RDS(on) SOtna-tRice Dsrisatiann-Sceource VGS = 10 V, ID = 2.25 A -- 2.0 2.5 Ω gFS Forward Transconductance VDS = 40 V, ID = 2.25 A -- 4.7 -- S Dynamic Characteristics Ciss Input Capacitance V = 25 V, V = 0 V, -- 515 670 pF DS GS Coss Output Capacitance f = 1.0 MHz -- 55 72 pF Crss Reverse Transfer Capacitance -- 6.5 8.5 pF Switching Characteristics td(on) Turn-On Delay Time V = 300 V, I = 4.5A, -- 10 30 ns DD D tr Turn-On Rise Time R = 25 Ω -- 42 90 ns G td(off) Turn-Off Delay Time -- 38 85 ns tf Turn-Off Fall Time (Note 4) -- 46 100 ns Qg Total Gate Charge VDS = 480 V, ID = 4.5A, -- 15 19 nC Qgs Gate-Source Charge VGS = 10 V -- 2.5 -- nC Qgd Gate-Drain Charge (Note 4) -- 6.6 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 18 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 4.5 A, -- 300 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/μs -- 2.2 -- μC NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 18.9 mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 4.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2003 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FQI5N60C Rev. C1

F Q I 5 Typical Characteristics N 6 0 C — N 101 T o p : 11 0 5 .V.00G VSV -C 87..00 VV 101 h I, Drain Current [A]D1100-10 B o t t o m : 46655.....55050 VVVVV I, Drain Current [A]D100 25oC 150oC -55oC annel QFET ※ Notes : ※ Notes : ® 10-210-1 100 10 1 12.. 2T5C 0=μ 2s5 P℃ulse Test 10-12 4 6 12.. V25DS08 μ= s4 0PVulse Test 10 MO V , Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] S DS F E T Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 101 ce 5 A] R [Ω],DS(ON)ain-Source On-Resistan 234 VGS = 10V VGS = 20V Reverse Drain Current [ 100 150℃ Dr 01 ※ Note : TJ = 25℃ I, DR10-1 25℃ ※ 12 N.. V2o5Gte0S sμ= : s0 VPulse Test 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I, Drain Current [A] V , Source-Drain voltage [V] D SD Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation with Source Current and Temperature 1000 12 CCCiorssssss === CCCggdsds ++ CCggdd (Cds = shorted) 10 V = 120V 800 V] DS Capacitance [pF] 246000000 CCCoirssssss ※ 21 N.. Vfo =GteS 1 s= M; 0H Vz V, Gate-Source Voltage [GS 2468 VVDSD S= = 4 38000VV ※ Note : ID = 4.5A 0 0 10-1 100 101 0 4 8 12 16 Q, Total Gate Charge [nC] V , Drain-Source Voltage [V] G DS Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2003 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FQI5N60C Rev. C1

F Q I 5 Typical Characteristics (Continued) N 6 0 C — 1.2 3.0 e N oltag ce 2.5 -C BV, (Normalized)DSSDrain-Source Breakdown V 011...901 ※ 12 N.. VIoDG t=eS s =2 : 500 V μA R, (Normalized)DS(ON)Drain-Source On-Resistan 0112....5050 ※ 12 N.. VIoDG t=eS s=2 : .1205 VA hannel QFET ® M 0.8 0.0 -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 O T, Junction Temperature [oC] T, Junction Temperature [oC] S J J F E Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation T vs Temperature vs Temperature Operation in This Area 5 is Limited by R DS(on) 101 100 μs 4 I, Drain Current [A]D1100-10 ※ Notes : DC100 1m0s ms1 ms I, Drain Current [A]D23 123... TSTCJi n ==g l12e55 P0 o uCoClse 1 10-2 0 100 101 102 103 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature W] 100 C/ D=0.5 oonse [sponse 0.2 pe Z(t), Thermal ResθJCZ(t), Thermal RθJC 1100--21 0000....0001152 single pulse P※ D M 123 N... ZDToθJtuMeJt sCy-( ttTF:1) tCa=2 c= t1 oP.r2D,5 MD ℃*= Zt/1Wθ/t2J CM(t)ax. 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 Figure 11. Transient Thermal Response Curve ©2003 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FQI5N60C Rev. C1

F Q I 5 N 6 Figure 12. Gate Charge Test Circuit & Waveform 0 C — N - C VVGGSS h SSaammee TTyyppee a 5500KKΩΩ aass DDUUTT QQgg nn 1122VV 220000nnFF 1100VV e 330000nnFF l Q VV VV DDSS F GGSS QQggss QQggdd E T ® M DDUUTT O IG = co33nmmsAAt. S F E T CChhaarrggee Figure 13. Resistive Switching Test Circuit & Waveforms VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp ©2003 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FQI5N60C Rev. C1

F Q I 5 N 6 Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 0 C — N DDUUTT ++ - C h a VV n DDSS n e l __ Q F E T II SSDD ® LLL M O S F DDrriivveerr E RR T GG SSaammee TTyyppee aass DDUUTT VVDDDD VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp ©2003 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FQI5N60C Rev. C1

F Q Mechanical Dimensions I 5 N 6 0 C — N - C h a n n e l Q F E T ® M O S F E T Figure 16. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262-003 ©2003 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FQI5N60C Rev. C1

F Q I 5 N 6 0 C — TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not N intended to be an exhaustive list of all such trademarks. -C AccuPower™ F-PFS™ Sync-Lock™ h AX-CAP®* FRFET® ® ®* a BitSiC™ Global Power ResourceSM PowtmerTrench® n Build it Now™ GreenBridge™ PowerXS™ TinyBoost® ne CCoorreePPOLUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TTiinnyyBCuaclck™® l Q CROSSVOLT™ Gmax™ QS™ TinyLogic® F CTL™ GTO™ Quiet Series™ TINYOPTO™ E CDuErUreXnPt ETEraDn®sfer Logic™ IISntOelPliMLAANXA™R™ Rapid™Configure™ TTiinnyyPPoWwMe™r™ T® DEcuoaSl CPAooRl™K® Manadr kBinegtt eSrm™all Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TinyWire™ M EfficentMax™ MegaBuck™ SignalWise™ TranSiC™ O TriFault Detect™ ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* S ® MicroFET™ SMART START™ μSerDes™ F MicroPak™ Solutions for Your Success™ E Fairchild® MicroPak2™ SPM® T FFAaiCrcTh iQldu Sieet mSiecroiensd™uctor® MMiollteiorDnMrivaex™™ SSTupEeArLFTEHT™® UHC® FACT® mWSaver® SuperSOT™-3 Ultra FRFET™ FAST® OptoHiT™ SuperSOT™-6 UniFET™ FastvCore™ OPTOLOGIC® SuperSOT™-8 VCX™ FETBench™ OPTOPLANAR® SupreMOS® VisualMax™ FPS™ SyncFET™ VoltagePlus™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2003 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FQI5N60C Rev. C1

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