Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F Q D 2 N November 2015 6 0 C FQD2N60C / FQU2N60C / F Q ® N-Channel QFET MOSFET U 2 600 V, 1.9 A, 4.7 Ω N 6 0 C Features Description — • 1.9 A, 600 V, R = 4.7 Ω (Max.) @ V = 10 V, This N-Channel enhancement mode power MOSFET is DS(on) GS ID = 0.95 A produced using Fairchild Semiconductor’s proprietary N - • Low Gate Charge (Typ. 8.5 nC) planar stripe and DMOS technology. This advanced C h • Low Crss (Typ. 4.3 pF) MOSFET technology has been especially tailored to reduce a n • 100% Avalanche Tested on-state resistance, and to provide superior switching n • RoHS Compliant performance and high avalanche energy strength. These e l devices are suitable for switched mode power supplies, Q active power factor correction (PFC), and electronic lamp F E ballasts. T ® M D O S F D E T G S D-PAK I-PAK G G D S S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FQD2N60CTM / FQU2N60CTU Unit VDSS Drain-Source Voltage 600 V Drain Current - Continuous (TC = 25°C) 1.9 A I D - Continuous (T = 100°C) 1.14 A C IDM Drain Current - Pulsed (Note 1) 7.6 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ IAR Avalanche Current (Note 1) 1.9 A EAR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C)* 2.5 W A PD Power Dissipation (TC = 25°C) 44 W - Derate above 25°C 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics FQD2N60CTM / Symbol Parameter Unit FQU2N60CTU RθJC Thermal Resistance, Junction-to-Case, Max. 2.87 Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max. 110 °C/W RθJA Thermal Resistance, Junction-to-Ambient (* 1 in2 pad of 2 oz copper), Max. 50 ©2003 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQD2N60C / FQU2N60C Rev. 1.4

F Q Package Marking and Ordering Information D 2 N Device Marking Device Package Reel Size Tape Width Quantity 6 FQD2N60C FQD2N60CTM D-PAK 330 mm 16 mm 2500 units 0 C FQU2N60C FQU2N60CTU I-PAK Tube N/A 70 units / F Q Electrical Characteristics T = 25°C unless otherwise noted. U C 2 N Symbol Parameter Test Conditions Min Typ Max Unit 6 0 C Off Characteristics — BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 600 -- -- V ΔBVDSS Breakdown Voltage Temperature I = 250 μA, Referenced to 25°C -- 0.6 -- V/°C N- / ΔT Coefficient D C J h VDS = 600 V, VGS = 0 V -- -- 1 μA a IDSS Zero Gate Voltage Drain Current VDS = 480 V, TC = 125°C -- -- 10 μA nn IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA el IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA Q F E On Characteristics T VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V M® RDS(on) Static Drain-Source V = 10 V, I = 0.95 A -- 3.6 4.7 Ω O On-Resistance GS D S gFS Forward Transconductance VDS = 40 V, ID = 0.95 A -- 5.0 -- S FE T Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 180 235 pF Coss Output Capacitance f = 1.0 MHz -- 20 25 pF Crss Reverse Transfer Capacitance -- 4.3 5.6 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 2 A, -- 9 28 ns R = 25 Ω tr Turn-On Rise Time G -- 25 60 ns td(off) Turn-Off Delay Time -- 24 58 ns tf Turn-Off Fall Time (Note 4) -- 28 66 ns Qg Total Gate Charge VDS = 480 V, ID = 2 A, -- 8.5 12 nC Qgs Gate-Source Charge VGS = 10 V -- 1.3 -- nC Qgd Gate-Drain Charge (Note 4) -- 4.1 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.9 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 7.6 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.9 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 2 A, -- 230 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/μs -- 1.0 -- μC NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 56 mH, IAS = 2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 2 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2003 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FQD2N60C / FQU2N60C Rev.1.4

F Q Typical Performance Characteristics D 2 N 6 0 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics C / F Top : 1 5 V.0G SV 101 QU 10.0 V 8.0 V 2 7.0 V N 6.5 V 6.0 V 6 A]100 5.5 V A] 0 nt [ Bottom : 45..50 VV nt [ 150oC C Curre Curre100 -55oC — ain ain 25oC N Dr10-1 Dr - I, D I, D C h ※ 12 N.. 2To5Cte 0=sμ 2:s5 ℃Pulse Test ※ 12 .N. V2o5DteS0 s=μ : s4 0PVulse Test ann 10-2 10-1 e 10-1 100 101 2 4 6 8 10 l VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Q F E Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage T Drain Current and Gate Voltage Variation vs. Source Current ® and Temperatue M O S 12 F E T ce10 A] R [Ω],DS(ON)n-Source On-Resistan 468 VGS = 10V everse Drain Current [100 150℃ Drai 2 ※ NVotGeS : T=J =2 025V℃ I, RDR 25℃ ※ 21 N.. V2o5Gte0S sμ= : s0 VPulse Test 0 10-1 0 1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 500 12 450 CCCiorssssss === CCCggdsds ++ CCggdd (Cds = shorted) V = 120V 10 DS acitance [pF]223340505000000 CCoissss Source Voltage [V]68 VVDDSS == 340800VV Cap150 ※ Notes ; ate-4 100 Crss 12.. fV =GS 1 = M 0H Vz V, GGS2 50 ※ Note : ID = 2A 0 0 10-1 100 101 0 2 4 6 8 10 V , Drain-Source Voltage [V] Q, Total Gate Charge [nC] DS G ©2003 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FQD2N60C / FQU2N60C Rev.1.4

F Q Typical Performance Characteristics (Continued) D 2 N 6 0 Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation C vs. Temperature vs. Temperature / F Q 1.2 3.0 U e 2 ag N olt ce 2.5 6 BV, (Normalized)DSSDrain-Source Breakdown V011...901 ※ 12 N.. VIoDG t=eS s =2 : 500 V μA R, (Normalized)DS(ON)Drain-Source On-Resistan 0112....5050 ※21 N.. VIoDG t=eS s =0 : .1905 VA 0C — N-Channel 0.8 0.0 Q -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 F TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] ET ® Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current M O vs. Case Temperature S F E 2.0 T Operation in This Area 101 is Limited by R DS(on) 1.6 I, Drain Current [A]D1100-10 DC100 1m0s m1s ms100 μs I, Drain Current [A]D01..82 ※ Notes : 132... TSTCJi n ==g l12e55 P0 o uColCse 0.4 10-2 0.0 100 101 102 103 25 50 75 100 125 150 V , Drain-Source Voltage [V] T, Case Temperature [℃] DS C Figure 11. Transient Thermal Response Curve W] C/ oal Response [mal Response 100 D00=..120.5 ※ 123 .N.. ZDToθJtuMeJt Csy-( Tt:F)C a= c= t2 oP.r8D,7 MD ℃*= Zt/1Wθ/tJ2C M(t)ax. mer 0.05 Z(t), TherθJCZ(t), ThθJC10-1 00..0021 single pulse PDM t1t2 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 ©2003 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FQD2N60C / FQU2N60C Rev.1.4

F Q D 2 N Figure 12. Gate Charge Test Circuit & Waveform 6 0 C / F Q U VVGGSS 2 SSaammee TTyyppee N 5500KKΩΩ aass DDUUTT QQgg 60 1122VV 220000nnFF 1100VV C 330000nnFF — VV VV DDSS GGSS QQ QQ N ggss ggdd - C h a DDUUTT n IG = co33nmmsAAt. n e l Q CChhaarrggee F E T ® M O Figure 13. Resistive Switching Test Circuit & Waveforms S F E T VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp ©2003 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FQD2N60C / FQU2N60C Rev.1.4

F Q D 2 N Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 0 C / F Q DDUUTT ++ U 2 N VV 6 DDSS 0 C __ — N - II C SSDD h LLL a n n e l DDrriivveerr Q RR F GG E SSaammee TTyyppee aass DDUUTT VVDDDD T® M VVGGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR O GG S ••IISSDDccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd F E T GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VV DDD ===------------------------------------------------------------------------------ GGSS GGGaaattteee PPPuuulllssseee PPPeeerrriiioooddd 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD ddii//ddtt (( DDUUTT )) II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp ©2003 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FQD2N60C / FQU2N60C Rev.1.4

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: FQD2N60CTF FQD2N60CTM FQD2N60CTM_WS FQD2N60CTM-WS