Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F Q B 3 March 2016 4 P 1 0 FQB34P10 — P-Channel QFET® MOSFET P - C 100 V, -33.5 A, 60 mΩ h a n n e Description Features l Q This P-Channel enhancement mode power MOSFET is • -33.5 A, -100 V, R = 60 mΩ (Max.) @ V = .10 V, DS(on) GS F produced using Fairchild Semiconductor’s proprietary planar I = -16.75 A E D stripe and DMOS technology. This advanced MOSFET T technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 85 nC) ® resistance, and to provide superior switching performance M • Low Crss (Typ. 170 pF) and high avalanche energy strength. These devices are O suitable for switched mode power supplies, audio amplifier, • 100% Avalanche Tested S DC motor control, and variable switching power applications. F • 175°C Maximum Junction Temperature Rating E T S D G G S D2-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FQB34P10TM Unit VDSS Drain-Source Voltage -100 V ID Drain Current - Continuous (TC = 25°C) -33.5 A - Continuous (TC = 100°C) -23.5 A IDM Drain Current - Pulsed (Note 1) -134 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 2200 mJ IAR Avalanche Current (Note 1) -33.5 A EAR Repetitive Avalanche Energy (Note 1) 15.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns PD Power Dissipation (TA = 25°C) * 3.75 W Power Dissipation (TC = 25°C) 155 W - Derate above 25°C 1.03 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C Maximum lead temperature for soldering, TL 1/8" from case for 5 seconds 300 °C Thermal Characteristics Symbol Parameter FQB34P10TM Unit RJC Thermal Resistance, Junction to Case, Max. 0.97 Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 oC/W RJA Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 40 ©2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQB34P10 Rev. 1.4

F Package Marking and Ordering Information Q B Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 3 4 FQB34P10TM FQB34P10 D2-PAK Tape and Reel 330 mm 24 mm 800 units P 1 0 Electrical Characteristics TC = 25°C unless otherwise noted. — Symbol Parameter Test Conditions Min. Typ. Max. Unit P - C Off Characteristics h a BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -100 -- -- V n n ∆ /B ∆VTDJSS BCroeeaffkicdioewntn Voltage Temperature ID = -250 µA, Referenced to 25°C -- -0.1 -- V/°C el Q IDSS VDS = -100 V, VGS = 0 V -- -- -1 µA F Zero Gate Voltage Drain Current VDS = -80 V, TC = 150°C -- -- -10 µA ET IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA ® IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA M O S On Characteristics F VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V ET RDS(on) SOtna-tRice Dsrisatiann-Sceource VGS = -10 V, ID = -16.75 A -- 0.049 0.06 Ω gFS Forward Transconductance VDS = -40 V, ID = -16.75 A -- 23 -- S Dynamic Characteristics Ciss Input Capacitance V = -25 V, V = 0 V, -- 2240 2910 pF DS GS Coss Output Capacitance f = 1.0 MHz -- 730 950 pF Crss Reverse Transfer Capacitance -- 170 220 pF Switching Characteristics td(on) Turn-On Delay Time V = -50 V, I = -33.5 A, -- 25 60 ns DD D tr Turn-On Rise Time R = 25 Ω -- 250 510 ns G td(off) Turn-Off Delay Time -- 160 330 ns tf Turn-Off Fall Time (Note 4) -- 210 430 ns Qg Total Gate Charge VDS = -80 V, ID = -33.5 A, -- 85 110 nC Qgs Gate-Source Charge VGS = -10 V -- 15 -- nC Qgd Gate-Drain Charge (Note 4) -- 45 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -33.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -134 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -33.5 A -- -- -4.0 V trr Reverse Recovery Time VGS = 0 V, IS = -33.5 A, -- 160 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/µs -- 0.88 -- µC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = mH, IAS = -33.5A, VDD = -25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ -33.5 A, di/dt ≤ 300 A/µs , VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2000 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FQB34P10 Rev. 1.4

F TTyyppiiccaall CChhaarraacctteerriissttiiccss Q B 3 4 P 1 0 — 102 P - A] A] C -I , Drain Current [D -I , Drain Current [D110001 2157℃5℃ -55℃ ※ Notes : hannel QF 12.. V25DS0 μ= s-4 P0uVlse Test E T 10-1 ® 22 4 6 8 10 M -V , Drain-Source Voltage [V] -V , Gate-Source Voltage [V] DS GS O S Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics F E T 102 stance ent [A] ΩR [],DS(on)Drain-Source On-Resi -I , Reverse Drain CurrDR110001 175℃ 25℃ ※ 21 .N. 2Vo5Gte0S sμ= : s0 VPulse Test 10-1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 6500 12 556050000000 Coss CCCiorssssss === CCCggdsds ++ CCggdd (Cds = shorted) V]10 VDS =V -D5S 0=V -20V F]4500 Ciss age [ 8 VDS = -80V Capacitances [p22334050500000000000 Crss ※21 N.. fVo =GteS 1 s= M: 0H Vz Gate-Source Volt 46 11050000 V, GS2 - 500 ※ Note : ID = -33.5 A 010-1 100 101 00 20 40 60 80 100 V , Drain-Source Voltage [V] Q, Total Gate Charge [nC] DS G Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2000 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FQB34P10 Rev. 1.4

F Typical Characteristics (Continued) Q B 3 4 P 1 0 1.2 2.5 — e g -BV, (Normalized)DSSDrain-Source Breakdown Volta011...901 ※12 N.. VIoDG t=eS s =- 2: 05 0V μA R, (Normalized)DS(ON)Drain-Source On-Resistance 0112....5050 ※12 .N. VIoDG t=eS s =- 1: -61.07 5V A P-Channel QFE T 0.8-100 -50 0 50 100 150 200 0.0-100 -50 0 50 100 150 200 ® T, Junction Temperature [oC] T, Junction Temperature [oC] M J J O S Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation F vs. Temperature vs. Temperature E T 40 Operation in This Area is Limited by R DS(on) 35 102 100 μs 30 A] 1 ms A] ent [ 10 ms ent [25 Curr101 DC Curr20 n n ai ai Dr Dr15 -I, D100 ※ Notes : -I, D10 132... STTCJi n ==g l12e75 P5 o uColCse 5 10-1 0 100 101 102 25 50 75 100 125 150 175 -V , Drain-Source Voltage [V] T, Case Temperature [℃] DS C Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 100 W] C/ D=0.5 oe [ s 0.2 n al Respo 10-1 00..015 ※ 231 N... DZToθJtuMeJt Csy-( Tt:F)C a= c= t0 oP.r9D,7 MD ℃*= Zt/1Wθ/tJ2C M(t)ax. erm 0.02 PDM Th 0.01 t1 Z(t), JC 10-2 single pulse t2 10-5 10-4 10-3 10-2 10-1 100 101 t, Square Wave Pulse Duration [sec] 1 Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FQB34P10 Rev. 1.4

F Q B 3 4 P 1 0 — VV SSaammee TTyyppee GGSS P 5500KKΩΩ aass DDUUTT QQ -C 1122VV 220000nnFF gg h 330000nnFF a n VV n VVGGSS DDSS QQ QQ e ggss ggdd l Q F E DDUUTT T IG = const. ® M O CChhaarrggee S F E Figure 12. Gate Charge Test Circuit & Waveform T RR LL VV tt tt DDSS oonn ooffff VVGGSS VVDDDD ttdd((oonn)) ttrr ttdd((ooffff)) ttff VV RR GGSS GG 1100%% VV DDUUTT GGSS VV 9900%% DDSS Figure 13. Resistive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE ===---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD tt pp TTiimmee III DDD RRGG VV VVDDDD VVDDSS ((tt)) DDDD II ((tt)) DD VVGGSS DDUUTT II AASS tt BBVV pp DDSSSS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2000 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FQB34P10 Rev. 1.4

F Q B 3 4 P 1 0 — P ++ - C h a VV n DDSS n e DDUUTT __ l Q F E T IISSDD ® LLL M O S F DDrriivveerr E RR T GG CCoommpplliimmeenntt ooff DDUUTT ((NN--CChhaannnneell)) VVDDDD VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VV DDD ===------------------------------------------------------------------------------ GGSS GGGaaattteee PPPuuulllssseee PPPeeerrriiioooddd 1100VV (( DDrriivveerr )) BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt II SSDD II (( DDUUTT )) RRMM ddii//ddtt II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM VV VV DDSS SSDD (( DDUUTT )) BBooddyy DDiiooddee VV DDDD FFoorrwwaarrdd VVoollttaaggee DDrroopp BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2000 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FQB34P10 Rev. 1.4

F Q Mechanical Dimensions B 3 4 P 1 0 — P - C h a n n e l Q F E T ® M O S F E T ©2000 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FQB34P10 Rev. 1.4

F Q B 3 4 P 1 0 TRADEMARKS — The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. P - C AccuPower™ F-PFS™ OPTOPLANAR® h AttitudeEngine™ FRFET® ®* a AABwXitS-inCiCdAa™P®®* GGGlrroeebeeannlB FPrPiodSwg™eer™ ResourceSM PPoowwtmee®rrT Sruepnpchly® WebDesigner™ TTiinnyyBBouocks®t® nne TinyCalc™ l Build it Now™ Green FPS™ e-Series™ PowerXS™ TinyLogic® Q CorePLUS™ Gmax™ Programmable Active Droop™ CorePOWER™ GTO™ QFET® TINYOPTO™ F TinyPower™ E CROSSVOLT™ IntelliMAX™ QS™ TinyPWM™ T CTL™ ISOPLANAR™ Quiet Series™ TinyWire™ ® CDuErUreXnPt ETEraDn®sfer Logic™ Manadr kBinegtt eSrm™all Speakers Sound Louder Rapid™Configure™ TranSiC™ M DEcuoaSl CPAooRl™K® MMeICgRaBOuCcOk™UPLER™ Saving our world, 1mW/W/kW at a time™ TTrRiFUaEuClt UDReRteEcNt™T®* OS μSerDes™ EfficentMax™ MicroFET™ SignalWise™ F ESBC™ MicroPak™ SmartMax™ E MicroPak2™ SMART START™ T ® MillerDrive™ Solutions for Your Success™ UHC® Fairchild® MotionMax™ SPM® Ultra FRFET™ Fairchild Semiconductor® MotionGrid® STEALTH™ UniFET™ FACT Quiet Series™ MTi® SuperFET® VCX™ FACT® MTx® SuperSOT™-3 VisualMax™ FastvCore™ MVN® SuperSOT™-6 VoltagePlus™ FETBench™ mWSaver® SuperSOT™-8 XS™ FPS™ OptoHiT™ SupreMOS® Xsens™ OPTOLOGIC® SyncFET™ 仙童® Sync-Lock™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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