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F Q A 7 0 June 2014 N 1 5 FQA70N15 — N N-Channel QFET® MOSFET - C Ω h 150 V, 70 A, 28 m a n n e Description Features l Q This N-Channel enhancement mode power MOSFET • 70 A, 100 V, RDS(on) = 28 mΩ (Max)@VGS = 10 V, ID = 35 A F is produced using Fairchild Semiconductor’s E • Low Gate Charge (Typ. 135 nC) proprietary planar stripe and DMOS technology. This T ® advanced MOSFET technology has been especially • Low Crss (Typ.135 pF) M tailored to reduce on-state resistance, and to provide • 100% Avalanche Tested O superior switching performance and high avalanche energy strength. These devices are suitable for switched • 175°C Maximum Junction Temperature Rating S F mode power supplies, audio amplifier, DC motor control, E and variable switching power applications. T D G G D TO-3PN S S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA70N15 Unit VDSS Drain-Source Voltage 150 V ID Drain Current - Continuous (TC = 25°C) 70 A - Continuous (TC = 100°C) 50 A IDM Drain Curent - Pulsed (Note 1) 280 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 1000 mJ IAR Avalanche Current (Note 1) 70 A EAR Repetitive Avalanche Energy (Note 1) 33 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation (TC = 25°C) 330 W - Derate above 25°C 2.2 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C Maximum lead temperature for soldering purposes, TL 1/8" from case for 5 seconds 300 °C Thermal Characteristics Symbol Parameter FQA70N15 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.45 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W ©2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA70N15 Rev. C2

F Package Marking and Ordering Information Q A Device Marking Device Package Reel Size Tape Width Quantity 7 0 FQA70N15 FQA70N15 TO-3PN - - 30 N 1 5 Electrical Characteristics TC = 25°C unless otherwise noted — Symbol Parameter Test Conditions Min Typ Max Unit N - C Off Characteristics h BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 150 -- -- V an /Δ B ΔVTDJSS BCroeeaffkicdioewntn Voltage Temperature ID = 250 μA, Referenced to 25°C -- 0.15 -- V/°C nel Q IDSS Zero Gate Voltage Drain Current VDS = 150 V, VGS = 0 V -- -- 1 μA F VDS = 120 V, TC = 150°C -- -- 10 μA E T IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA ® IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA M O On Characteristics S F VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250 μA 2.0 -- 4.0 V E T RDS(on) SOtna-tRice Dsrisatiann-Sceource VGS = 10 V, ID = 35 A -- 0.023 0.028 Ω gFS Forward Transconductance VDS = 40 V, ID = 35 A -- 48 -- S Dynamic Characteristics Ciss Input Capacitance V = 25 V, V = 0 V, -- 4150 5400 pF DS GS Coss Output Capacitance f = 1.0 MHz -- 840 1100 pF Crss Reverse Transfer Capacitance -- 135 175 pF Switching Characteristics td(on) Turn-On Delay Time V = 75 V, I = 70 A, -- 60 130 ns DD D tr Turn-On Rise Time R = 25 Ω -- 420 850 ns G td(off) Turn-Off Delay Time -- 340 690 ns tf Turn-Off Fall Time (Note 4) -- 290 590 ns Qg Total Gate Charge VDS = 120 V, ID = 70 A, -- 135 175 nC Qgs Gate-Source Charge VGS = 10 V -- 25 -- nC Qgd Gate-Drain Charge (Note 4) -- 65 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 70 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 280 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 70 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 70 A, -- 150 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/μs -- 0.67 -- μC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2.L = 0.34mH, IAS = 70A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 70A, di/dt ≤ 300A/μs, VDD = BVDSS, Starting TJ = 25°C 4.Essentially independent of operating temperature ©2000 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FQA70N15 Rev. C2

F Typical Characteristics Q A 7 0 N 1 5 Top : 1 5 .V0 GVS — 10.0 V 102 102 87..00 VV N nt [A] Bottom : 4655....5050 VVVV ent [A] 101 175℃ -Ch I, Drain CurreD101 ※ Notes : I , Drain CurrD 100 25℃ -55℃ ※ Notes : annel Q 12.. 2T5C 0=μ 2s5 P℃ulse Test 21.. 2V5DS0 μ= s3 0PVulse Test FE 10-1 T 10-1 100 101 2 4 6 8 10 ® VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] M O S Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics F E T 0.12 e A] 102 ΩR [],DS(on)ource On-Resistanc00..0069 VGS = 20VVGS = 10V erse Drain Current [ 101 S v n- Re 100 Drai0.03 I , DR 117755℃℃ 25℃ ※1 N. VoGteS s= : 0V ※ Note : TJ = 25℃ 2. 250μs Pulse Test 0.00 10-1 0 50 100 150 200 250 300 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 I , Drain Current [A] V , Source-Drain Voltage [V] D SD Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current 6000 12 5000 CCCiorssssss === CCCggdsds ++ CCggdd (Cds = shorted) V] 10 VDS = 30V nce [pF] 34000000 CCoissss ce Voltage [ 68 VDSV =DS 1 =2 07V5V acita Sour Cap 12000000 Crss ※ 12 N.. Vfo =GteS 1 s= M: 0H Vz V, Gate-GS 24 ※ Note : ID = 70 A 0 0 10-1 100 101 0 30 60 90 120 150 V , Drain-Source Voltage [V] Q, Total Gate Charge [nC] DS G Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2000 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FQA70N15 Rev. C2

F Typical Characteristics Q (Continued) A 7 0 N 1 1.2 3.0 5 ge — a BV, (Normalized)DSSDrain-Source Breakdown Volt 011...901 ※21 N.. IVoDG t=eS s =2 : 500 V μA R, (Normalized)DS(ON)Drain-Source On-Resistance 01122.....50505 ※12 N.. VIoDG t=eS s =3 : 51 0A V N-Channel QFE 0.8 0.0 T -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 ® T, Junction Temperature [oC] T, Junction Temperature [oC] M J J O S Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation F vs. Temperature vs. Temperature E T 70 103 Operation in This Area is Limited by R DS(on) 60 A] 102 100 μs 10 μs A] 50 urrent [ DC10 ms1 ms urrent [ 40 ain C 101 ain C 30 Dr Dr I, D100 ※ Notes : I, D20 213... TTSCJin ==g l12e75 P5 o uColCse 10 10-1 0 100 101 102 25 50 75 100 125 150 175 V , Drain-Source Voltage [V] T, Case Temperature [℃] DS C Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature W] C/ D=0.5 oe [ ※ Notes : Respons 10-1 00..12 123... TDZθJuMJt Cy-( tTF) Ca= c= t0 oP.r4D,5 MD ℃*= Zt/1Wθ/t2J CM(t)ax. al m 0.05 her PDM (t), TC 10-2 00..0012 single pulse t1t2 ZJ 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FQA70N15 Rev. C2

F Q A 7 0 Figure 12. Gate Charge Test Circuit & Waveform N 1 5 — N - C VV GGSS h SSaammee TTyyppee a 5500KKΩΩ aass DDUUTT QQ n gg n 1122VV 220000nnFF 1100VV e 330000nnFF l VV Q VVGGSS DDSS QQ QQ F ggss ggdd E T ® DDUUTT M O IG = co33nmmsAAt. S F E CChhaarrggee T Figure 13. Resistive Switching Test Circuit & Waveforms VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp ©2000 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FQA70N15 Rev. C2

F Q A 7 0 Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms N 1 5 — N DDUUTT ++ - C h a VV n DDSS n e __ l Q F E II T SSDD ® LLL M O S DDrriivveerr F E RR T GG SSaammee TTyyppee aass DDUUTT VVDDDD VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VV DDD ===------------------------------------------------------------------------------ GGSS GGGaaattteee PPPuuulllssseee PPPeeerrriiioooddd 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD ddii//ddtt (( DDUUTT )) II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp ©2000 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FQA70N15 Rev. C2

F Q Mechanical Dimensions A 7 0 N 1 5 — N - C h a n n e l Q F E T ® M O S F E T Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003 ©2000 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FQA70N15 Rev. C2

F Q A 7 0 N 1 5 TRADEMARKS — The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not N intended to be an exhaustive list of all such trademarks. - C AccuPower™ F-PFS™ AX-CAP®* FRFET® ® ®* h BitSiC™ Global Power ResourceSM PowtmerTrench® TinyBoost® an Build it Now™ GreenBridge™ PowerXS™ TinyBuck® n CCoorreePPOLUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TTiinnyyCLoaglcic™® el CROSSVOLT™ Gmax™ QS™ Q TINYOPTO™ CTL™ GTO™ Quiet Series™ F TinyPower™ Current Transfer Logic™ IntelliMAX™ RapidConfigure™ E DEUXPEED® ISOPLANAR™ ™ TinyPWM™ T TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder ® EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TTrriaFnaSuilCt D™etect™ M EfficentMax™ MegaBuck™ SignalWise™ TRUECURRENT®* O ESBC™ MICROCOUPLER™ SmartMax™ MicroFET™ SMART START™ μSerDes™ S ® MicroPak™ Solutions for Your Success™ F FFaaiirrcchhiilldd® Semiconductor® MMiicllerorDPraivke2™™ SSTPEMA®LTH™ UHC® ET FACT Quiet Series™ MotionMax™ SuperFET® Ultra FRFET™ FACT® mWSaver® SuperSOT™-3 UniFET™ FAST® OptoHiT™ SuperSOT™-6 VCX™ FastvCore™ OPTOLOGIC® SuperSOT™-8 VisualMax™ FETBench™ OPTOPLANAR® SupreMOS® VoltagePlus™ FPS™ SyncFET™ XS™ Sync-Lock™ 仙童™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I68 ©2000 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FQA70N15 Rev. C2

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