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  • 型号: FPF2104
  • 制造商: Fairchild Semiconductor
  • 库位|库存: xxxx|xxxx
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FPF2104产品简介:

ICGOO电子元器件商城为您提供FPF2104由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 FPF2104价格参考。Fairchild SemiconductorFPF2104封装/规格:PMIC - 配电开关,负载驱动器, 。您可以下载FPF2104参考资料、Datasheet数据手册功能说明书,资料中有FPF2104 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC SWITCH LOAD FULL FUNC SOT23-5电源开关 IC - 配电 INTELLIMAX ADV L

产品分类

PMIC - 电源分配开关开关 IC

品牌

Fairchild Semiconductor

产品手册

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产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

电源开关 IC - 配电,Fairchild Semiconductor FPF2104IntelliMax™

数据手册

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产品型号

FPF2104

PCN封装

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PCN设计/规格

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Rds(On)

160 毫欧

上升时间

12 us

下降时间

136 us

产品

Load Switches

产品目录页面

点击此处下载产品Datasheet

产品种类

电源开关 IC - 配电

供应商器件封装

SOT-23-5

其它名称

FPF2104DKR

内部开关

包装

Digi-Reel®

单位重量

30 mg

商标

Fairchild Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

导通电阻—最大值

160 mOhms

封装

Reel

封装/外壳

SC-74A,SOT-753

封装/箱体

SOT-23-5

工作温度

-40°C ~ 85°C

工作电源电压

1.8 V to 5.5 V

工厂包装数量

3000

开关数量

1

最大功率耗散

667 mW

最大工作温度

+ 85 C

最大输入电压

5.5 V

最小工作温度

- 40 C

最小输入电压

1.8 V

标准包装

1

电压-输入

1.8 V ~ 5.5 V

电流限制

400 mA

电源电压-最大

5.5 V

电源电压-最小

1.8 V

空闲时间—最大值

50 us

类型

Load Switch

系列

FPF2104

输出数

1

输出电流

0.4 A

输出端数量

1 Output

运行时间—最大值

25 us

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PDF Datasheet 数据手册内容提取

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F P F 2 1 August 2008 0 0 - FPF2100-FPF2107 F P tm F IntelliMAX™ Advanced Load Management Products 2 1 0 7 Features General Description I n t (cid:132) 1.8 to 5.5V Input Voltage Range The FPF2100 through FPF2107 is a family of load switches e l (cid:132) Controlled Turn-On which provide full protection to systems and loads which may li M encounter large current conditions. These devices contain a (cid:132) 200mA and 400mA Current Limit Options A 0.125Ω current-limited P-channel MOSFET which can operate (cid:132) Undervoltage Lockout X over an input voltage range of 1.8-5.5V. Switch control is by a ™ (cid:132) Thermal Shutdown logic input (ON) capable of interfacing directly with low voltage (cid:132) <1µA Shutdown Current control signals. Each part contains thermal shutdown protection A (cid:132) Auto restart which shuts off the switch to prevent damage to the part when a dv (cid:132) Fast Current limit Response Time continuous over-current condition causes excessive heating. a n (cid:132) 3µs to Moderate Over Currents When the switch current reaches the current limit, the part c e (cid:132) 20ns to Hard Shorts operates in a constant-current mode to prohibit excessive d currents from causing damage. For the FPF2100-FPF2102 and (cid:132) Fault Blanking L FPF2104-FPF2106, if the constant current condition still o (cid:132) RoHS Compliant persists after 10ms, these parts will shut off the switch and pull a d Applications the fault signal pin (FLAGB) low. The FPF2100, FPF2101, M FPF2104 and FPF2105, have an auto-restart feature which will a (cid:132) PDAs turn the switch on again after 160ms if the ON pin is still active. n The FPF2102 and FPF2106 do not have this auto-restart a (cid:132) Cell Phones g feature so the switch will remain off until the ON pin is cycled. e (cid:132) GPS Devices For the FPF2103 and FPF2107, a current limit condition will m (cid:132) MP3 Players immediately pull the fault signal pin low and the part will remain e (cid:132) Digital Cameras in the constant-current mode until the switch current falls below n t (cid:132) Peripheral Ports the current limit. For the FPF2100 through FPF2103, the P minimum current limit is 200mA while that for the FPF2104 r (cid:132) Hot Swap Supplies o through FPF2107 is 400mA. d u These parts are available in a space-saving 5 pin SOT23 c package. ts Ordering Information Current Limit Auto-Restart Current Limit Blanking Time Time ON Pin Part [mA] [ms] [ms] Activity Top Mark FPF2100 200 10 160 Active HI 2100 FPF2101 200 10 160 Active LO 2101 FPF2102 200 10 NA Active HI 2102 FPF2103 200 0 NA Active HI 2103 FPF2104 400 10 160 Active HI 2104 FPF2105 400 10 160 Active LO 2105 FPF2106 400 10 NA Active HI 2106 FPF2107 400 0 NA Active HI 2107 ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FPF2100-FPF2107 Rev. H

F P Typical Application Circuit F 2 1 0 0 TO LOAD -F P VIN VOUT F 2 FPF2100 - FPF2107 1 0 7 OFF ON ON FLAGB I GND n t e l l i M A X Functional Block Diagram ™ A d VIN v a n c e UVLO d L o a d ON CONTROL M LOGIC a n a g CURRENT e m LIMIT e n THERMAL VOUT t SHUTDOWN P FLAGB r o d u c t s GND Pin Configuration VIN 1 5 VOUT GND 2 ON 3 4 FLAGB SOT23-5 Pin Description Pin Name Function 1 VIN Supply Input: Input to the power switch and the supply voltage for the IC 2 GND Ground 3 ON ON Control Input 4 FLAGB Fault Output: Active LO, open drain output which indicates an over current supply, under voltage or over temperature state. 5 V Switch Output: Output of the power switch OUT 2 www.fairchildsemi.com FPF2100-FPF2107 Rev. H

F P Absolute Maximum Ratings F 2 1 Parameter Min Max Unit 0 0 VIN, VOUT, ON, FLAGB to GND -0.3 6 V -F P Power Dissipation @ TA = 25°C (note 1) 667 mW F 2 Operating Junction Temperature -40 125 °C 1 0 Storage Temperature -65 150 °C 7 Thermal Resistance, Junction to Ambient 150 °C/W I n Electrostatic Discharge Protection HBM 4000 V te l MM 400 V li M A Recommended Operating Range X ™ Parameter Min Max Unit A d VIN 1.8 5.5 V v a Ambient Operating Temperature, TA -40 85 °C n c e d Electrical Characteristics L V = 1.8 to 5.5V, T = -40 to +85°C unless otherwise noted. Typical values are at V = 3.3V and T = 25°C. o IN A IN A a Parameter Symbol Conditions Min Typ Max Units d M Basic Operation a Operating Voltage V 1.8 5.5 V n IN a I = 0mA V = 1.8 to 3.3V 95 g Quiescent Current I OUT IN µA e Q V active V = 3.3 to 5.5V 110 200 m ON IN e Shutdown Current ISHDN 1 µA n t Latch-Off Current (note 2) ILATCHOFF VON = VIN, after an overcurrent fault 50 µA P r VIN = 3.3V, IOUT = 50mA, TA = 25°C 125 160 o d On-Resistance RON VIN = 3.3V, IOUT = 50mA, TA = 85°C 150 200 mΩ u c VIN = 3.3V, IOUT = 50mA, TA = -40°C to +85°C 65 200 ts V = 1.8V 0.75 IN ON Input Logic High Voltage V V IH V = 5.5V 1.30 IN V = 1.8V 0.5 IN ON Input Logic Low Voltage V V IL V = 5.5V 1.0 IN ON Input Leakage V = V or GND 1 µA ON IN V = 0V, V = 0V ON OUT 1 µA @ V = 5.5V, T = 85°C IN A Off Switch Leakage I SWOFF V = 0V, V = 0V ON OUT 10 100 nA @ V = 3.3V, T = 25°C IN A V = 5V, I = 10mA 0.1 0.2 IN SINK FLAGB Output Logic Low Voltage V V = 1.8V, I = 10mA 0.15 0.3 IN SINK FLAGB Output High Leakage Current V = 5V, Switch on 1 µA IN Protections FPF2100, FPF2101, 200 300 400 V = 3.3V, FPF2102, FPF2103 Current Limit I IN mA LIM VOUT = 3.0V FPF2104, FPF2105, 400 600 800 FPF2106, FPF2107 Shutdown Threshold 140 Thermal Shutdown Return from Shutdown 130 °C Hysteresis 10 3 www.fairchildsemi.com FPF2100-FPF2107 Rev. H

F P F Electrical Characteristics Cont. 2 1 V = 1.8 to 5.5V, T = -40 to +85°C unless otherwise noted. Typical values are at V = 3.3V and T = 25°C. 0 IN A IN A 0 Parameter Symbol Conditions Min Typ Max Units - F P Protections F 2 Under Voltage Shutdown UVLO V Increasing 1.5 1.6 1.7 V IN 1 0 Under Voltage Shutdown Hysteresis 47 mV 7 Dynamic I n Turn on time tON RL = 500Ω, CL = 0.1µF 25 µs te l Turn off time tOFF RL = 500Ω, CL = 0.1µF 50 µs liM VOUT Rise Time tR RL = 500Ω, CL = 0.1µF 12 µs A X V Fall Time t R = 500Ω, C = 0.1µF 136 µs OUT F L L ™ FPF2100, FPF2101, FPF2102, FPF2104, Over Current Blanking Time t 5 10 20 ms A BLANK FPF2105, FPF2106 d v Auto-Restart Time t FPF2100, FPF2101, FPF2104, FPF2105 80 160 320 ms RSTRT a n V = V = 3.3V. Moderate IN ON 3 µs c Short Circuit Response Time Over-Current Condition. e d VIN = VON = 3.3V. Hard Short. 20 ns L o a Note 1: Package power dissipation on 1 square inch pad, 2 oz. copper board. d Note 2: Applicable only to FPF2102 and FPF2106. Latchoff current does not include current flowing into FLAGB. M a n a g e m e n t P r o d u c t s 4 www.fairchildsemi.com FPF2100-FPF2107 Rev. H

F P Typical Characteristics F 2 1 0 120 150 0 - VON = VIN F 110 P CURRENT (uA) 10900 CURRENT (uA) 111300 VIN = 5.5V VIN = 3.3V F2107 In PLY 80 PLY 90 te P P l U U l S 70 S 70 VIN = 1.8V iM A X 60 50 ™ 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 -40 -15 10 35 60 85 A SUPPLY VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) d Figure 1. Quiescent Current vs. Input Voltage Figure 2. Quiescent Current vs. Temperature v a n c e d L o a 700 500 d I_SHDN I_SWOFF M 600 a A) A)400 n n500 n a T ( T ( g REN400 REN300 em R R Y CU300 VIN = 5.5V Y CU200 VIN = 5.5V en PL PL t SUP200 VIN = 3.3V SUP100 VIN = 3.3V Pro 100 d u 0 0 c t -40 -15 10 35 60 85 -40 -15 10 35 60 85 s TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) Figure 3. I Current vs. Temperature Figure 4. I Current vs. Temperature SHUTDOWN SWITCH-OFF 63 1.4 59 1.2 A) FPF2100, 2102, 2103, 2104, 2106, 2107 Y CURRENT (u 455715 VIN = 5.5V HRESHOLD (V) 00..681 FPF2101, 2105 UPPL 43 VIN = 3.3V ON T 0.4 S 39 0.2 35 0 -40 -15 10 35 60 85 1.5 2 2.5 3 3.5 4 4.5 5 5.5 TJ, JUNCTION TEMPERATURE (oC) VIN, INPUT VOLTAGE (V) Figure 5. I vs. Temperature Figure 6. V vs. V LATCHOFF IH IN 5 www.fairchildsemi.com FPF2100-FPF2107 Rev. H

F P Typical Characteristics F 2 1 0 700 700 0 - F 600 600 P A) FPF2104 - FPF2107 A) FPF2104 - FPF2107 F m 500 m 2 T ( T (500 1 N N 0 RE 400 RE 7 PUT CUR 300 FPF2100 - FPF2103 PUT CUR340000 Inte OUT 200 OUT FPF2100 - FPF2103 lliM 200 100 A X 0 100 ™ 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 -40 -15 10 35 60 85 VIN-VOUT (V) TJ, JUNCTION TEMPERATURE (oC) Ad Figure 7. Current Limit vs. Output Voltage Figure 8. Current Limit vs. Temperature v a n c e d L o a 160 200 d M 150 180 a n 140 160 a ms) ms) VIN = 1.8V ge R (mOh(ON)112300 R (mOhON112400 VIN = 3.3V VIN = 5.5V ment 110 100 P r o 100 80 d u 90 60 c t 1 2 3 4 5 6 -40 -15 10 35 60 85 s VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 9. R vs. V Figure 10. R vs. Temperature (ON) IN (ON) 100 1000 ILOAD = 10mA ILOAD = 10mA VCC = 3.3V VCC = 3.3V uS) TDT(OOFFFF) uS) T(FALL) ES ( ES ( 100 M M TI TI F F F F ON/O TDT(OONN) ON/O T(RISE) N- N- 10 R R U U T T 10 1 -40 -15 10 35 60 85 -40 -15 10 35 60 85 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) Figure 11. T /T vs. Temperature Figure 12. T /T vs. Temperature ON OFF RISE FALL 6 www.fairchildsemi.com FPF2100-FPF2107 Rev. H

F P Typical Characteristics F 2 1 0 12 180 0 - 11 160 FP mS) 140 F ME (10 mS)120 21 TI 9 E ( 0 G M100 7 NKIN 8 RT TI 80 In BLA 7 STA 60 te LAG- 6 RE 40 lliM F 5 20 A X 4 0 ™ -40 -15 10 35 60 85 -40 -15 10 35 60 85 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) Ad Figure 13. T vs. Temperature Figure 14. T vs. Temperature v BLANK RESTART a n c e d L o a d V 3 V 3 M DRV DRV a 2V/DIV 2V/DIV n a g V V e OUT OUT m 2V/DIV 2V/DIV e n t IOUT IOUT P 200mA/DIV 200mA/DIV r o V V d FLAGB FLAGB u 2V/DIV 2V/DIV c t s 5mS/DIV 20mS/DIV Figure 15. T Response Figure 16. T Response BLANK RESTART R = 500Ω, C = 0.1µF R = 500Ω, C = 0.1µF L L L L Active High Devices Active High Devices V ON V 2V/DIV ON 2V/DIV I OUT I 10mA/DIV OUT 10mA/DIV 100µS/DIV 200nS/DIV Figure 17. T Response Figure 18. T Response ON OFF 7 www.fairchildsemi.com FPF2100-FPF2107 Rev. H

F P Typical Characteristics F 2 1 0 0 2VVIN / DIV CCIONU =T 1=0 0µ.F1µF VAcINti v=e V HOiNgh Devices -FP F 2 V /V IN ON 1 2V/DIV 0 7 IOUT In 5A/DIV t e IOUT ll 200mA/DIV iM V OUT A 2V/DIV X ™ 20µS/DIV 50µS/DIV A d Figure 19. Short Circuit Response Time Figure 20. Current Limit Response v (Output Shorted to GND) (Switch power up to hard short) a n c e d L o a Active High Devices d V IN M 2V/DIV a n a g VON e 2V/DIV m e n t P r I o OUT d 200mA/DIV u c t s 50µS/DIV Figure 21. Current Limit Response Time (Output Shorted to GND by 10Ω, moderate short) Note 3: V signal forces the device to go into overcurrent condition. DRV 8 www.fairchildsemi.com FPF2100-FPF2107 Rev. H

F P Description of Operation Current Limiting F 2 The current limit ensures that the current through the switch 1 The FPF2100-FPF2107 are current limited switches that protect doesn't exceed a maximum value while not limiting at less than 0 systems and loads which can be damaged or disrupted by the 0 a minimum value. For the FPF2100-FPF2103 the minimum - application of high currents. The core of each device is a F current is 200mA and the maximum current is 400mA and for P 0.125Ω P-channel MOSFET and a controller capable of the FPF2104-FPF2107 the minimum current is 400mA and the F functioning over a wide input operating range of 1.8-5.5V. The maximum current is 800mA. The FPF2100-FPF2103 have a 2 controller protects against system malfunctions through current 1 blanking time of 10ms, nominally, during which the switch will 0 limiting, under-voltage lockout and thermal shutdown. The act as a constant current source. At the end of the blanking 7 current limit is preset for either 200mA or 400mA. time, the switch will be turned-off and the FLAGB pin will I n activate to indicate that current limiting has occurred. The t e On/Off Control FPF2103 and FPF2107 have no current limit blanking period so l l The ON pin controls the state of the switch. Active HI and LO immediately upon a current limit condition FLAGB is activated. iM versions are available. Refer to the Ordering Information for These parts will remain in a constant current state until the ON A details. Activating ON continuously holds the switch in the on pin is deactivated or the thermal shutdown turns-off the switch. X state so long as there is no fault. For all versions, an under- ™ voltage on VIN or a junction temperature in excess of 150°C Reverse Voltage A overrides the ON control to turn off the switch. In addition, If the voltage at the VOUT pin is larger than the VIN pin, large d excessive currents will cause the switch to turn off in FPF2100- currents may flow and can cause permanent damage to the v a FPF2102 and FPF2104-FPF2107. The FPF2100, FPF2101, device. FPF2100-FPF2107 is designed to control current flow n FPF2104 and FPF2105 have an Auto-Restart feature which will from V to V . c IN OUT e automatically turn the switch on again after 160ms. For the d FPF2102 and FPF2106, the ON pin must be toggled to turn-on Under-Voltage Lockout L the switch again. The FPF2103 and FPF2107 do not turn off in The under-voltage lockout turns-off the switch if the input o response to a over current condition but instead remain voltage drops below the under-voltage lockout threshold. With ad operating in a constant current mode so long as ON is active the ON pin active the input voltage rising above the under- M and the thermal shutdown or under-voltage lockout have not voltage lockout threshold will cause a controlled turn on of the a activated. switch which limits current over-shoots. n a g Fault Reporting Thermal Shutdown e m Upon the detection of an over-current, an input under-voltage, The thermal shutdown protects the part from internally or e or an over-temperature condition, the FLAGB signals the fault externally generated excessive temperatures. During an over- n mode by activating LO. For the FPF2100-FPF2102 and temperature condition the FLAGB is activated and the switch is t FPF2104-FPF2106, the FLAGB goes LO at the end of the turned-off. The switch automatically turns-on again if the P r blanking time while FLAGB goes LO immediately for the temperature of the die drops below the threshold temperature. o FPF2103 and FPF2107. FLAGB remains LO through the Auto- d u Restart Time for the FPF2100, FPF2101 FPF2104 and c FPF2105. For the FPF2102 and FPF2106, FLAGB is latched ts LO and ON must be toggled to release it.With the FPF2103 and FPF2107, FLAGB is LO during the faults and immediately returns HI at the end of the fault condition. FLAGB is an open- drain MOSFET which requires a pull-up resistor between VIN and FLAGB. During shutdown, the pull-down on FLAGB is disabled to reduce current draw from the supply. 9 www.fairchildsemi.com FPF2100-FPF2107 Rev. H

F P Application Information F 2 1 Typical Application 0 0 - F P F 2 LOAD 1 V V 0 IN OUT R1 = 100KΩ 7 Battery FPF2100 - FPF2107 In 1.8V-5.5V OFF ON ON FLAGB R2 = 499Ω te l GND C2 = 0.1µF li M C1 = 4.7µF A X ™ A d v a n Input Capacitor c e To limit the voltage drop on the input supply caused by transient If the part goes into current limit the maximum power dissipation d in-rush currents when the switch turns-on into a discharged load will occur when the output is shorted to ground. For the L capacitor or a short-circuit, a capacitor needs to be placed FPF2100, FPF2101, FPF2104 and FPF2105, the power o between V and GND. A 4.7µF ceramic capacitor, C , must be dissipation will scale by the Auto-Restart Time, t , and the a IN IN RSTRT d placed close to the VIN pin. A higher value of CIN can be used to Over Current Blanking Time, tBLANK, so that the maximum M further reduce the voltage drop experienced as the switch is power dissipated is typically, a turned on into a large capacitive load. n t a P(max) = -------------------B---L---A---N----K-------------------xV xI g Output Capacitor t +t IN(max) LIM(max) e RESTART BLANK m A 0.1uF capacitor COUT, should be placed between VOUT and 10 = -----------------------×5.5×0.8 = 260mW e GND. This capacitor will prevent parasitic board inductances 10+160 (3) n from forcing V below GND when the switch turns-off. For the t OUT P FPF2100-FPF2102 and the FPF2104-FPF2106, the total output When using the FPF2102 and FPF2106 attention must be given r capacitance needs to be kept below a maximum value, to the manual resetting of the part. Continuously resetting the o d C (max), to prevent the part from registering an over-current part at a high duty cycle when a short on the output is present OUT u condition and turning off the switch. The maximum output can cause the temperature of the part to increase. The junction c capacitance can be determined from the following formula, temperature will only be allowed to increase to the thermal ts shutdown threshold. Once this temperature has been reached, C = I--L---I--M----(---m-----a----x---)----×----t--B----L---A---N----K---(---m-----i--n----)- (1) toggling ON will not turn on the switch until the junction OUT(max) V temperature drops. For the FPF2103 and FPF2107, a short on IN the output will cause the part to operate in a constant current state dissipating a worst case power as calculated in (3) until the thermal shutdown activates. It will then cycle in and out of Due to the integral body diode in the PMOS switch, a C IN thermal shutdown so long as the ON pin is active and the short greater than C is highly recommended. A C greater than OUT OUT is present. C can cause V to exceed V when the system supply is IN OUT IN removed. This could result in current flow through the body Board Layout diode from V to V . OUT IN For best performance, all traces should be as short as possible. To be most effective, the input and output capacitors should be Power Dissipation placed close to the device to minimize the effects that parasitic During normal operation as a switch, the power dissipation is trace inductances may have on normal and short-circuit small and has little effect on the operating temperature of the operation. Using wide traces for V , V and GND will help part. The parts with the higher current limits will dissipate the IN OUT minimize parasitic electrical effects along with minimizing the most power and that will only typically be, case to ambient thermal impedance. P = (I )2×R = (0.2)2×0.125 = 80mW (2) LIM DS 10 www.fairchildsemi.com FPF2100-FPF2107 Rev. H

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