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F P F 1 2 August 2016 0 3 / F P F FPF1203 / FPF1203L / FPF1204 / FPF12045 1 2 0 IntelliMAX™ Ultra-Small, Slew-Rate-Controlled Load Switch 3 L / F Features Description P F 1  1.2 V to 5.5 V Input Voltage Operating Range The FPF1203 / 03L / 04 / 45 are ultra-small integrated 2 0  Typical R : IntelliMAX™ load switches with integrated P-channel 4 ON switch and analog control features. Integrated slew- /  45 mΩ at VIN=5.5 V rate control prevents inrush current and the resulting F P  55 mΩ at VIN=3.3 V excessive voltage drop on the power rail. The input F voltage range operates from 1.2 V to 5.5 V to provide 1  90 mΩ at VIN=1.8 V 2 power-disconnect capability for post-regulated power 0  185 mΩ at VIN=1.2 V rails in portable and consumer products. The low shut- 4 5  Slew Rate Control with tR: off current allows power designs to meet standby and — off-power drain specifications.  FPF1203/FPF1203l/FPF1204: 100 µs I  FPF12045: 2 µs The FPF120x are controlled by a logic input (ON pin) nt compatible with standard CMOS GPIO circuitry found e  Output Discharge Function on FPF1204 / 45 on Field Programmable Gate Array (FPGA) embedded lli M  Low <1.5 µA Quiescent Current processors. The FPF120x are available in 0.76 mm x A  ESD Protected: Above 7 kV HBM, 2 kV CDM 0.76 mm 4-bump WLCSP. X ™  GPIO / CMOS-Compatible Enable Circuitry Applications U l t  4-Bump, WLCSP 0.76 mm x 0.76 mm,  Mobile Devices and Smart Phones ra 0.4 mm Pitch - S  Portable Media Devices m  Tablet PCs al l ,  Advanced Notebook, UMPC, MID S l e  Portable Medical Devices w  GPS and Navigation Equipment -R a t e - C o n Ordering Information t r o l Switch l Top Output ON Pin e Part Number Mark (Typical) Discharge Activity tR Package d at 3.3V L IN o a FPF1203UCX QL 55 mΩ NA Active HIGH 100 µs d FPF1203LUCX QP 55 mΩ NA Active LOW 100 µs S w FPF1204UCX QM 55 mΩ 65 Ω Active HIGH 100 µs 4-Bump, Wafer-Level Chip- it c FPF1204UCX_F013 Scale Package (WLCSP), h (Amkor Assembly Only) QM 55 mΩ 65 Ω Active HIGH 100 µs 0.76 mm x 0.76 mm, 0.4 mm Pitch FPF1204BUCX QM 55 mΩ 65 Ω Active HIGH 100 µs (Backside Laminate) FPF12045UCX NC 55 mΩ 65 Ω Active HIGH 2 µs © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1203 / FPF1203L / FPF1204 / FPF12045 • Rev. 1.14

Application Diagram F P F 1 2 0 VIN VIN VOUT VOUT 3 / F FPF1203/03L/04/45 P F + 1 - CIN ON GND COUT 20 3 L / F P F 1 2 0 4 Figure 1. Typical Application / F P F 1 2 0 Functional Block Diagram 4 5 — I n FPF1203/03L/04/45 t e l VIN VOUT liM A X ™ U l t r a ON CONTROL -S LOGIC m Turn-On Slew Rate a Controlled Driver l l , S R ESD Protection le w Output Discharge - R (Optional) a t e - C o n t r o l l GND e d L Figure 2. Functional Block Diagram (Output Discharge for FPF1204 / 45) o a d S w i t c h © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1203 / FPF1203L / FPF1204 / FPF12045 • Rev. 1.14 2

F P F 1 Pin Configurations 2 0 3 / F P F 1 2 0 3 L / F Figure 3. WLCSP Bumps Facing Down Figure 4. WLCSP Bumps Facing Up P (Top View) (Bottom View) F 1 2 0 4 / F VO UT A 1 A 2 VI N VI N A 2 A 1 VO UT PF 1 2 0 4 GN D B 1 B 2 ON ON B 2 B 1 GN D 5 — I n t e Figure 5. Pin Assignments (Top View) Figure 6. Pin Assignments (Bottom View) l l i M A X ™ U Pin Definitions l t r a Pin # Name Description - S m A1 V Switch output OUT a A2 VIN Supply input: input to the power switch ll, S B1 GND Ground l e B2 ON ON/OFF Control, active HIGH; FPF1203/04/45 w - B2 ON ON/OFF Control, active LOW; FPF1203L R a t e - C o n t r o l l e d L o a d S w i t c h © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1203 / FPF1203L / FPF1204 / FPF12045 • Rev. 1.14 3

F P Absolute Maximum Ratings F 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 2 0 operable above the recommended operating conditions and stressing the parts to these levels is not recommended. 3 In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. / F The absolute maximum ratings are stress ratings only. P F Symbol Parameter Min. Max. Unit 1 2 0 VIN VIN, VOUT, VON to GND -0.3 6.0 V 3 L ISW Maximum Continuous Switch Current at Ambient Operating Temperature 2.2 A / F P Power Dissipation at T =25°C 1.0 W D A P F T Storage Temperature Range -65 +150 °C STG 1 1S2P with One Thermal Via(1) 110 20 JA Thermal Resistance, Junction-to-Ambient 1S2P without Thermal Via(2) 95 °C/W 4 / F Human Body Model, 7 P JESD22-A114 F ESD Electrostatic Discharge Capability(1,2) kV 1 Charged Device Model, 2 2 0 JESD22-C101 4 5 Notes: — 1. Measured using 2S2P JEDEC std. PCB. 2. Measured using 2S2P JEDEC PCB COLD PLATE Method. I n t e ll i M A Recommended Operating Conditions X ™ The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended U operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not lt r recommend exceeding them or designing to Absolute Maximum Ratings. a - S Symbol Parameter Min. Max. Unit m a VIN Input Voltage 1.2 5.5 V ll, TA Ambient Operating Temperature -40 +85 °C Sl e w - R a t e - C o n t r o l l e d L o a d S w i t c h © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1203 / FPF1203L / FPF1204 / FPF12045 • Rev. 1.14 4

F Electrical Characteristics P F 1 Unless otherwise noted, VIN=1.2 V to 5.5 V and TA=-40 to +85°C. Typical values are at VIN=3.3 V and TA=25°C. 2 0 Symbol Parameter Condition Min. Typ. Max. Unit 3 / Basic Operation F P V Supply Voltage 1.2 5.5 V F IN 1 2 Off Supply FPF1203/04/45 VON=GND, VOUT=Open, VIN=5.5 V 0.1 1.0 0 IQ(OFF) Current FPF1203L VON=VIN, VOUT=Open, VIN=5.5 V 1.0 2.0 μA 3L I Shutdown FPF1203/04/45 VON=GND, VOUT=GND 0.1 1.0 μA / F SD Current FPF1203L V =V , V =GND 1.2 3.0 P ON IN OUT F Quiescent FPF1203/04/45 IOUT=0 mA, VON=VIN, =5.5 V 12 I 0.1 1.5 μA Q Current FPF1203L IOUT=0 mA, VON=GND, VIN, = 5.5 V 04 VIN=5.5 V, IOUT=200 mA, TA=25°C 45 55(3) / F V =3.3 V, I =200 mA, T =25°C 55 65(3) P IN OUT A F R On Resistance V =1.8 V, I =200 mA, T =25°C 90 100(3) mΩ 1 ON IN OUT A 2 VIN=1.2 V, IOUT=200 mA, TA=25°C 185 220(3) 04 5 VIN=1.8 V, IOUT=200 mA, TA=85°C(3) 105 — VIN=3.3 V, VON=OFF, I R Output Discharge R I =20 mA, T =25°C, 65 75 Ω n PD PULL DOWN FORCE A t FPF1204 / FPF12045 e l l i M V On Input Logic HIGH Voltage V =1.2 V to 5.5 V 1.15 V IH IN A X ™ VIL On Input Logic LOW Voltage VIN=1.2 V to 5.5 V 0.65 V U l t r R Pull-Down Resistance at ON Pin V =1.2 V to 5.5 V 8.3 MΩ a ON_PD IN - S ION On Input Leakage VON=VIN or GND 1 μA m Dynamic Characteristics a l l tDON Turn-On Delay(4) 70 , S t V Rise Time(4) 100 le R OUT w tON Turn-On Time(6) VIN=3.3 V, RL=10 Ω, CL=0.1 µF, 170 μs -R tDON Turn-On Delay(4) TA=25°C, FPF12045 2 at tR VOUT Rise Time(4) 2 e-C t Turn-On Time(6) 4 o ON n t Turn-Off Delay(4,5) 0.5 t DOFF r tF VOUT Fall Time(4,5) VTAIN==235.°3C V, ,F RPLF=11200 Ω3L, CL=0.1 µF, 2.0 μs olle t Turn-Off Time(5,7) 2.5 d OFF tDOFF Turn-Off Delay(4,5) 6 Lo V =3.3 V, R =500 Ω, C =0.1 µF, a tF VOUT Fall Time(4,5) TIN=25°C, FPLF1203L L 115 μs d A t Turn-Off Time(5,7) 121 S OFF w t Turn-Off Delay(4,5) 4.0 i DOFF t t V Fall Time(4,5) VIN=3.3 V, RL=10 Ω, CL=0.1 µF, 2.9 μs ch F OUT TA=25°C, FPF1203 t Turn-Off Time(5,7) 7.3 OFF t Turn-Off Delay(4,5) 6 DOFF t V Fall Time(4,5) VIN=3.3 V, RL=500 Ω, CL=0.1 µF, 115 μs F OUT T =25°C, FPF1203 A t Turn-Off Time(5,7) 121 OFF Continued on the following page… © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1203 / FPF1203L / FPF1204 / FPF12045 • Rev. 1.14 5

F Electrical Characteristics P F 1 Unless otherwise noted, VIN=1.2 V to 5.5 V and TA=-40 to +85°C. Typical values are at VIN=3.3 V and TA=25°C. 2 0 Symbol Parameter Condition Min. Typ. Max. Unit 3 / t Turn-Off Delay(4,5) 4.0 F DOFF P tF VOUT Fall Time(4,5) VTIN==235.°3C V, ,F RPLF=11200 Ω4/,4 C5L(5=) 0.1 µF, 2.5 μs F1 A t Turn-Off Time(5,7) 6.5 2 OFF 0 tDOFF Turn-Off Delay(4,5) 6 3L tF VOUT Fall Time(4,5) VTIN==235.°3C V, ,F RPLF=1520004Ω/4, 5C(5L)= 0.1 µF, 11 μs / F A t Turn-Off Time(5,7) 17 P OFF F Notes: 1 2 3. This parameter is guaranteed by design and characterization; not production tested. 0 4. t /t /t /t are defined in Figure 23. 4 DON DOFF R F 5. Output discharge enabled during off-state. / F 6. tON=tR + tDON. P 7. t =t + t F OFF F DOFF. 1 2 0 4 5 — I n t e l l i M A X ™ U l t r a - S m a l l , S l e w - R a t e - C o n t r o l l e d L o a d S w i t c h © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1203 / FPF1203L / FPF1204 / FPF12045 • Rev. 1.14 6

F Typical Performance Characteristics P F 1 2 0 3 / F P F 1 2 0 3 L / F P F 1 2 0 Figure 7. Shutdown Current vs. Temperature Figure 8. Shutdown Current vs. Supply Voltage 4 / F P F 1 2 0 4 5 — I n t e l l i M A X ™ Figure 9. Off Supply Current vs. Temperature Figure 10. Off Supply Current vs. Supply Voltage U (V Floating) (V Floating) OUT OUT l t r a - S m a l l , S l e w - R a t e - C o n t Figure 11. Quiescent Current vs. Temperature Figure 12. Quiescent Current vs. Supply Voltage r o l l e d L o a d S w i t c h Figure 13. R vs. Temperature Figure 14. R vs. Supply Voltage ON ON © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1203 / FPF1203L / FPF1204 / FPF12045 • Rev. 1.14 7

F P F Typical Performance Characteristics (Continued) 1 2 0 3 100 / F P 100µs F A) 10 1 NT ( 1ms 20 E 3 RR L U 1 10ms N C RDS(ON)Limit 100ms / F RAI Single Pulse 1s P I, DD0.1 RqJTAA== 1 2150ooCC/W 1D0Cs F12 0 4 0.01 / F 0.1 1 10 P VDS, DRAIN-SOURCE VOLTAGE (V) F 1 Figure 16. Drain Current vs. Drain-Source Voltage 2 Figure 15. ON Pin Threshold vs. V 0 IN Safe Operating Area 4 5 — I n t e l l i M A X ™ U l t r a - S m a l l , S l e Figure 17. Turn-On Response – FPF1203 / 04 w (VIN=3.3 V, CIN=1 µF, COUT=0.1 µF, RL=10 Ω) -R a t e - C o n t r o l l e d L o a d S w i t c h Figure 18. Turn-Off Response – FPF1203 Figure 19. Turn-Off Response – FPF1203 (V =3.3 V, C =1 µF, C =0.1 µF, R =10 Ω) (V =3.3 V, C =1 µF, C =0.1 µF, R =500 Ω) IN IN OUT L IN IN OUT L © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1203 / FPF1203L / FPF1204 / FPF12045 • Rev. 1.14 8

F P F 1 Typical Performance Characteristics (Continued) 2 0 3 / F P F 1 2 0 3 L / F P F 1 2 0 4 / F P F 1 2 0 Figure 20. Turn-Off Response (V =3.3 V, C =1 µF, Figure 21. Turn-Off Response (V =3.3 V, C =1 µF, 4 IN IN IN IN 5 COUT=0.1 µF, RL=10 Ω, FPF1204 / 45) COUT=0.1 µF, RL=500 Ω, FPF1204 / 45) — I n t e l l i M A X ™ U l t r a - S m a l l , S l e w - R a t e - C o n t r o l l e d L o a d S w i t c h © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1203 / FPF1203L / FPF1204 / FPF12045 • Rev. 1.14 9

F P F Operation and Application Description 1 2 0 The FPF1203 / 03L / 04 / 045 are low-R P-channel Output Capacitor 3 ON load switches with controlled turn-on. The core of each / device is a 55 m P-channel MOSFET and controller AV 0.1 aµnFd c aGpNaDci toprin, sC.O TUTh,i ss hcoauplda cbiteo rp lparceevde nbtest wpeaerna stihtiec FP capable of functioning over a wide input operating range OUT F board inductance from forcing V below GND when of 1.2 to 5.5 V. OUT 1 the switch is on. C greater than C is highly 2 IN OUT 0 The FPF1204 / 45 contain a 65  on-chip load resistor recommended. COUT greater than CIN can cause VOUT to 3 for quick output discharge when the switch is turned off. exceed VIN when the system supply is removed. This L could result in current flow through the body diode from / The FPF12045 features a faster VOUT Rise Time of 5 μs. VOUT to VIN. FP F 1 VIN VIN VOUT VOUT 20 FPF1204 4 +- CIN OFFON ON GND COUT / F P F 1 2 0 Figure 22. Typical Application 4 5 — I Input Capacitor n t e To limit the voltage drop on the input supply caused by ll transient inrush current when the switch turns on into a iM discharged load capacitor or short-circuit, a capacitor Figure 23. Timing Diagram for FPF1203/4/045 A must be placed between the V and GND pins. A 1 µF X IN ceramic capacitor, C , placed close to the pins is ™ usually sufficient. HigINher-value CIN can be used to Board Layout U l reduce the voltage drop in higher-current applications. t r For best performance, traces should be as short as a - possible. To be most effective, input and output S capacitors should be placed close to the device to m minimize the effect of parasitic trace inductance on a l normal and short-circuit operation. Using wide traces or l, large copper planes for all pins (VIN, VOUT, ON, and S l GND) minimizes the parasitic electrical effects and the e w case-ambient thermal impedance. However, the VOUT - pin should not connect directly to the battery source due R a to the discharge mechanism of the load switch. t e - C o n The table below pertains to the Packaging information on the following page. t r o l Product Dimensions le d D E X Y L o 760 µm ± 30 µm 760 µm ± 30 µm 0.180 mm± 0.018 µm 0.180 mm± 0.018 µm a d S w it c h © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1203 / FPF1203L / FPF1204 / FPF12045 • Rev. 1.14 10

F 0.03 C E A 2X B 0.40 Ø0.20 Cu Pad A1 BALL A1 D 0.40 INDEX AREA Ø0.30 0.03 C Solder Mask 2X TOP VIEW RECOMMENDED LAND PATTERN (NSMD PAD TYPE) 0.06 C 0.539 0.292±0.018 0.461 E 0.05 C 0.208±0.021 C SEATING PLANE SIDE VIEWS D NOTES: A. NO JEDEC REGISTRATION APPLIES. B. DIMENSIONS ARE IN MILLIMETERS. 0.005 C A B Ø0.260±0.020 C. DIMENSIONS AND TOLERANCE 0.40 4X PER ASME Y14.5M, 1994. B (Y)±0.018 D. DATUM C IS DEFINED BY THE SPHERICAL 0.40 A CROWNS OF THE BALLS. F 1 2 E. PACKAGE NOMINAL HEIGHT IS 500 MICRONS (X)±0.018 ±39 MICRONS (461-539 MICRONS). F. FOR DIMENSIONS D, E, X, AND Y SEE PRODUCT DATASHEET. BOTTOM VIEW G. DRAWING FILNAME: MKT-UC004AFrev2.

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