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  • 型号: FPF1008
  • 制造商: Fairchild Semiconductor
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FPF1008产品简介:

ICGOO电子元器件商城为您提供FPF1008由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 FPF1008价格参考¥2.61-¥2.61。Fairchild SemiconductorFPF1008封装/规格:PMIC - 配电开关,负载驱动器, 。您可以下载FPF1008参考资料、Datasheet数据手册功能说明书,资料中有FPF1008 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC LOAD SWITCH P-CH 2X2 MICROFET开关 IC - 各种 DI/DT Control Load

产品分类

PMIC - 电源分配开关集成电路 - IC

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

开关 IC,开关 IC - 各种,Fairchild Semiconductor FPF1008IntelliMax™

数据手册

点击此处下载产品Datasheet

产品型号

FPF1008

PCN设计/规格

点击此处下载产品Datasheet

Rds(On)

40 毫欧

产品目录页面

点击此处下载产品Datasheet

产品种类

开关 IC - 各种

供应商器件封装

6-MicroFET(2x2)

其它名称

FPF1008DKR

内部开关

包装

Digi-Reel®

单位重量

60 mg

商标

Fairchild Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

导通电阻—最大值

0.175 Ohms

封装

Reel

封装/外壳

6-WDFN 裸露焊盘

封装/箱体

MicroFET-6

工作温度

-40°C ~ 85°C

工厂包装数量

3000

开关数量

Single

开关配置

P-Channel

最大功率耗散

1200 mW

最大工作温度

+ 85 C

最小工作温度

- 40 C

标准包装

1

电压-输入

1.2 V ~ 5.5 V

电流限制

1.5A

电源电压-最大

5.5 V

电源电压-最小

1.2 V

电源电流

8 uA

类型

高端开关

系列

FPF1008

输出数

1

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F P F 1 0 October 2012 0 7 - F P F 1 FPF1007-FPF1009 0 0 9 IntelliMAX™ Advanced Load Products — I n Features General Description t e l l  1.2 to 5.5 V Input Voltage Range The FPF1007/8/9 are low RDS P-Channel MOSFET load iM  Typical R = 30 mΩ at V = 5.5 V switches offered in a selection of 10 µs, 80 µs, and 1 ms slew A ON IN rate turn-on options for transient / in-rush current control. To X  Typical R = 40 mΩ at V = 3.3 V ON IN support trends in mobile application requirements, the minimum ™  Fixed Three Different Turn-on Rise Time 10 µs / 80 µs / 1 ms operating input voltage has been reduced down to 1.2 V, the A  Low < 10 µA at VIN = 3.3 V Quiescent Current input current leakage has been minimized to extend battery life, d  Internal ON Pin Pull Down and the ESD-protection has been designed to withstand a v a  Output Discharge Function minimum of 8 kV (HBM) and 2 kV (CDM). n c  ESD Protection above 8000 V HBM and 2000 V CDM The switch is controlled by an active-high logic input (ON pin), e  RoHS Compliant allowing direct interface with a low-voltage control signal. An d internal ON pin pull-down resistor protects against unintentional L Applications device turn-on in the initial state. An on-chip pull-down resistor o a on the output is enabled when the switch is turned-off and d  PDAs provides quick, robust discharge of the output load. P  Cell Phones r o  GPS Devices d u  MP3 Players c t  Digital Cameras s  Peripheral Ports  Hot-Swap Supplies  Notebook Computers Pin 1 BOTTOM TOP Ordering Information Switch R at 5.5 V Rise Time Output Discharge ON Pin Part ON [Typ.] [Typ.] [Typ.] Activity FPF1007 30 mΩ, PMOS 10 µs 60 Ω Active HIGH FPF1008 30 mΩ, PMOS 80 µs 60 Ω Active HIGH FPF1009 30 mΩ, PMOS 1 ms 60 Ω Active HIGH © 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FPF1007-FPF1009 • Rev. 1.0.3

F P Typical Application Circuit F 1 0 0 7 - F IN OUT P F FPF1007-FPF1009 10 0 1.2 V~5.5 OFF ON ON COUT RL 9 — C  0.1 µF GND I IN n t e l l i M A X ™ A Functional Block Diagram d v a n c V e IN d L o a d Turn-ON Slew Rate P Controlled Driver r o d u CONTROL c ON LOGIC ts V OUT ESD Protection Output Discharge FPF1007-FPF1009 GND © 2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FPF1007-FPF1009 • Rev. 1.0.3

F P Pin Configuration F 1 0 0 7 GND 6 1 ON -F P F VOUT 5 2 VIN 1 0 0 VOUT 4 3 VIN 9 — MicroFET 2x2 6L I n BOTTOM VIEW t e l l i M A Pin Description X ™ Pin Name Function A d 4, 5 V Switch Output: Output of the power switch OUT v a 2, 3 V Supply Input: Input to the power switch and the supply voltage for the IC IN n c 6 GND Ground e d 1 ON ON/OFF Control Input L o a d P r o d u c t s © 2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FPF1007-FPF1009 • Rev. 1.0.3

F P Absolute Maximum Ratings F 1 0 Parameter Min. Max. Unit 0 7 VIN, VOUT, ON to GND -0.3 6.0 V -F P Maximum Continuous Switch Current 1.5 A F Power Dissipation at TA = 25°C(1) 1.2 W 10 0 Storage Junction Temperature -65 +150 °C 9 Operating Temperature Range -40 +85 °C — Thermal Resistance, Junction to Ambient 86 °C/W In t HBM 8000 V e Electrostatic Discharge Protection l l CDM 2000 V iM A Note: X ™ Package power dissipation on 1-square inch pad, 2 oz. copper board. A d v a Recommended Operating Range n c e Parameter Min. Max. Unit d L V 1.2 5.5 V IN o a Ambient Operating Temperature, T -40 +85 °C A d P r o d u c t s © 2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FPF1007-FPF1009 • Rev. 1.0.3

F P Electrical Characteristics F 1 V = 1.2 V to 5.5 V, T = -40 to +85°C unless otherwise noted. Typical values are at V = 3.3 V and T = 25°C. 0 IN A IN A 0 7 Parameter Symbol Conditions Min. Typ. Max. Units - F Basic Operation P F Operating Voltage V 1.2 5.5 V 1 IN 0 I = 0 mA, V = 3.3 V, V = Enabled 8 0 Quiescent Current I OUT IN ON µA 9 Q IOUT = 0 mA, VIN = 5.5 V, VON = Enabled 15 — Off Supply Current IQ(off) VON = GND, VOUT = OPEN 1 µA In Off Switch Current I (off) V = GND, V = GND 0.1 1.0 µA t SD ON OUT e l VIN = 5.5 V, IOUT = 200 mA, TA = 25°C 30 40 liM VIN = 3.3 V, IOUT = 200 mA, TA = 25°C 40 55 A X V = 1.5 V, I = 200 mA, T = 25°C 100 130 On-Resistance R IN OUT A mΩ ™ ON VIN = 1.2 V, IOUT = 200 mA, TA = 25°C 175 250 A VIN = 3.3 V, IOUT = 200 mA, 20 65 d T = -40°C to +85°C v A a Output Pull Down Resistance R V = 3.3 V, V = 0 V, T = 25°C 60 Ω n PD IN ON A c ON Input Logic Low Voltage V V = 1.2 V to 5.5 V 0.4 V e IL IN d ON Input Logic High Voltage VIH VIN = 1.2 V to 5.5 V 1 V L o ON Input Leakage (On) VON = VIN = 5.5 V 10 µA a d ON Input Leakage (Off) VON = GND 1 µA P Dynamic r o d FPF1007 u Turn On t 12 µs c ON t s Rise Time tR VIN = 3.3 V, RL = 500 Ω, RL_CHIP = 60 Ω, 10 µs Turn Off tOFF COUT = 0.1 µF, TA = 25°C 40 µs Fall Time t 15 µs F FPF1008 Turn On t 125 µs ON Rise Time tR VIN = 3.3 V, RL = 500 Ω, RL_CHIP = 60 Ω, 80 µs Turn Off tOFF COUT = 0.1 µF, TA = 25°C 40 µs Fall Time t 15 µs F FPF1009 Turn On t 2 ms ON Rise Time tR VIN = 3.3 V, RL = 500 Ω, RL_CHIP = 60 Ω, 1 ms Turn Off tOFF COUT = 0.1 µF, TA = 25°C 40 µs Fall Time t 15 µs F © 2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FPF1007-FPF1009 • Rev. 1.0.3

F P Typical Characteristics F 1 0 0 14 1.0 7 VON = 0V -F 12 0.9 P NT ( uA)10 VON = VIN NT ( uA)00..78 F100 RE 8 RE VIN = 5.5V 9 R R0.6 U U — SUPPLY C 246 VON = 0V SUPPLY C000...345 VIN = 3.V3IVN = 1.2V Intelli M 0 0.2 A 1 2 3 4 5 6 -40 -15 10 35 60 85 X SUPPLY VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) ™ A Figure 1. Quiescent Current vs. Input Voltage Figure 2. Quiescent Current vs. Temperature d v a n c e d 14 0.80 L VON = VIN VIN = 5.5V o 12 a CURRENT ( uA)1068 VIN = 3.3V Y VOLTAGE ( V) 000...677505 VONH(VIH) VONL(VIL) d Produ SUPPLY 4 VIN = 1.2V SUPPLON0.60 cts 2 V 0.55 0 0.50 -40 -15 10 35 60 85 1 2 3 4 5 6 TJ, JUNCTION TEMPERATURE (oC) VIN, SUPPLY VOLTAGE (V) Figure 3. Quiescent Current vs. Temperature Figure 4. V Voltage vs. Input Voltage ON 0.85 0.90 0.80 V) V) 0.85 E ( 0.75 E ( G G 0.80 TA VIN = 5.5V TA OL 0.70 OL VIN=5.5V V V 0.75 LY 0.65 LY UPP VIN = 3.3V UPP 0.70 VIN=3.3V V SON0.60 VIN = 1.2V V SON0.65 VIN=1.2V 0.55 0.50 0.60 -40 -15 10 35 60 85 -40 -15 10 35 60 85 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) Figure 5. V Low Voltage vs. Temperature Figure 6. V High Voltage vs. Temperature ON ON © 2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FPF1007-FPF1009 • Rev. 1.0.3

F P Typical Characteristics F 1 0 0 7.5 240 7 - F 6.5 210 P F uA) 5.5 VON = 5.5V 180 1 NT ( 4.5 ms) 150 00 PIN CURRE 23..55 R(mOhON12900 9 — In ON 1.5 60 85°C te 0.5 VON = 0V 30 25°C ll i -40°C M -0.5 0 A -40 -15 10 35 60 85 1 2 3 4 5 6 X TJ, JUNCTION TEMPERATURE (oC) VIN, SUPPLY VOLTAGE (V) ™ A Figure 7. On Pin Current vs. Temperature Figure 8. R vs. V d ON IN v a n c e d 100 1000 L FPF1007 TOFF FPF1008 o VIN = 3.3V a S) S) RL = 500 Ohms d N-ON/OFF TIMES (u 101 TON VRCILON U= =T 5 =30 .003 .VO1uhFms N-ON/OFF TIMES ( u 100 TON COUT = 0.1uF Products UR UR TOFF T T 0.1 10 -40 -15 10 35 60 85 -40 -15 10 35 60 85 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) Figure 9. FPF1007 t / t vs. Temperature Figure 10. FPF1008 t / t vs. Temperature ON OFF ON OFF 100 FPF1009 FPF1007 uS) TON S) MES ( 1000 ES ( u TFALL URN-ON/OFF TI TOFF VRCILON U= =T 5 =30 .003 .VO1uhFms RISE / FALL TIM 10 TRISE VRCILON U ==T 5=30 .030.V 1OuhFms T 10 1 -40 -15 10 35 60 85 -40 -15 10 35 60 85 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) Figure 11. FPF1009 t / t vs. Temperature Figure 12. FPF1007 t / t vs. Temperature ON OFF RISE FALL © 2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FPF1007-FPF1009 • Rev. 1.0.3

F P Typical Characteristics F 1 0 0 1000 10000 7 FPF1008 FPF1009 -F P S ( uS) 100 TRISE S ( uS) 1000 TRISE F10 ALL TIME TFALL ALL TIME 100 VRCILON U ==T 5=30 .030.V 1OuhFms 09 — E / F 10 E / F TFALL In RIS VIN = 3.3V RIS 10 te RL = 500 Ohms l COUT = 0.1uF li M 1 1 A -40 -15 10 35 60 85 -40 -15 10 35 60 85 X TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) ™ A Figure 13. FPF1008 t / t vs. Temperature Figure 14. FPF1009 t / t vs. Temperature d RISE FALL RISE FALL v a n c e d VON VON = 3.3 V VON VON = 3.3 V Lo 2 V/div VIN = 3.3 V 2 V/div VIN = 3.3 V a CIN = 1 µF CIN = 1 µF d COUT = 0.1 µF COUT = 0.1 µF P VIN RL = 499 Ω VIN RL = 499 Ω ro 2 V/div 2 V/div d u c IOUT IOUT ts 10 mA/div 50 mA/div VOUT VOUT 2 V/div 2 V/div 50µs/div 50µs/div Figure 15. FPF1007 Turn-On Response Figure 16. FPF1007 Turn-Off Response Load current discharged through on-chip output discharge resistor VON VON = 3.3 V VON VON = 3.3 V 2V/div VIN = 3.3 V 2V/div VIN = 3.3 V CIN = 1 µF CIN = 1 µF COUT = 1 µF COUT = 1 µF VIN RL = 10 Ω VIN RL = 10 Ω 2V/div 2V/div IOUT IOUT 200mA/div 200mA/div VOUT VOUT 2V/div 2V/div 50µs/div 50µs/div Figure 17. FPF1007 Turn-On Response (C = 1 µF) Figure 18. FPF1007 Turn-Off Response OUT © 2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FPF1007-FPF1009 • Rev. 1.0.3

F P Typical Characteristics F 1 0 0 7 VON VON = 3.3 V VON VON = 3.3 V -F 2 V/div VIN = 3.3 V 2 V/div VIN = 3.3 V P C = 1 µF C = 1 µF F IN IN C = 0.47 µF C = 0.47 µF 1 OUT OUT 0 VIN RL = 499 Ω VIN RL = 499 Ω 09 2 V/div 2 V/div — IOUT IOUT In 10 mA/div 50 mA/div t e l l i M VOUT VOUT A 2 V/div 2 V/div X ™ 500µs/div 100µs/div A Figure 19. FPF1008 Turn-On Response Figure 20. FPF1008 Turn-Off Response d Load current discharged through on-chip output discharge resistor v a n c e d VON VON = 3.3 V VON VON = 3.3 V Lo 2 V/div VIN = 3.3 V 2 V/div VIN = 3.3 V a C = 1 µF C = 1 µF d IN IN C = 4.7 µF C = 4.7 µF P OUT OUT VIN RL = 10 Ω VIN RL = 10 Ω ro 2 V/div 2 V/div d u c IOUT IOUT ts 500 mA/div 10 mA/div VOUT VOUT 2 V/div 2 V/div 100 µs/div 100 µs/div Figure 21. FPF1008 Turn-On Response (C = 4.7 µF) Figure 22. FPF1008 Turn-Off Response OUT VON VON = 3.3 V VON VON = 3.3 V 2 V/div VIN = 3.3 V 2 V/div VIN = 3.3 V CIN = 1 µF CIN = 1 µF COUT = 10 µF COUT = 0.47 µF VIN RL = 10 Ω VIN RL = 499 Ω 2 V/div 2 V/div IOUT IOUT 500 mA/ 10 mA/div VOUT VOUT 2 V/div 2 V/div 500µs/div 2 ms/div Figure 23. FPF1008 Turn-On Response (C = 10 µF) Figure 24. FPF1009 Turn-On Response OUT © 2008 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com FPF1007-FPF1009 • Rev. 1.0.3

F P Typical Characteristics F 1 0 0 7 VON VON = 3.3 V VON VON = 3.3 V -F 2 V/div VIN = 3.3 V 2 V/div VIN = 3.3 V P CIN = 1 µF CIN = 1 µF F COUT = 0.47 µF COUT = 47 µF 10 VIN RL = 499 Ω VIN RL = 10 Ω 09 2 V/div 2 V/div — IOUT IOUT In 50 mA/div 500 mA/ t e l l i M VOUT VOUT A 2 V/div 2 V/div X ™ 500µs/div 2 ms/div A Figure 25. FPF1009 Turn-Off Response Figure 26. FPF1009 Turn-On Response (C = 47 µF) d OUT Load current discharged through on-chip output discharge resistor v a n c e d 2 VVO/dNiv VVOINN = = 3 3.3.3 V V 2VVO/dNiv VVON = = 5 3 V.3 V Loa C = 1 µF IN d CIONUT = 47 µF CIN = 1 µF P VIN RL = 10 Ω VIN COUT = 100 µF ro 2 V/div 2V/div RL = 10 Ω d u c IOUT IOUT ts 500 mA/div 500mA/div VOUT VOUT 2 V/div 2V/div 2 ms/div 2 ms/div Figure 27. FPF1009 Turn-Off Response Figure 28. FPF1009 Turn-On Response (C = 100 µF, V = 5 V) OUT IN Timing Diagram 90% 90% where: t = Turn-On Time ON VOUT 10% 10% tOFF = Turn-Off Time t = Turn-On Delay Time tR tF tdon = Turn-Off Delay Time doff 3.3 V tR = Rise Time t = V Fall Time F OUT 50% 50% t = t + t ON R don VON tOFF = tF + tdoff t F 90% V 10% OUT t t don doff © 2008 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com FPF1007-FPF1009 • Rev. 1.0.3

0.05 C 2.0 A 1.72 1.68 2X B 6 4 0.15 2.0 0.90 1.21 2.25 0.52(6X) 0.05 C PIN1IDENT 1 3 TOPVIEW 2X 0.65 0.42(6X) RECOMMENDED LANDPATTERN (cid:19)(cid:17)(cid:26)(cid:24)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) 0.10 C (cid:19)(cid:17)(cid:21)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) NOTES: 0.08 C SIDEVIEW C (cid:19)(cid:17)(cid:19)(cid:21)(cid:24)(cid:147)(cid:19)(cid:17)(cid:19)(cid:21)(cid:24) A.PACKAGEDOESNOTFULLYCONFORM SEATING TOJEDECMO-229REGISTRATION PLANE B.DIMENSIONSAREINMILLIMETERS. C.DIMENSIONSANDTOLERANCESPER (cid:21)(cid:17)(cid:19)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) ASMEY14.5M,2009. (cid:20)(cid:17)(cid:23)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) D.LANDPATTERNRECOMMENDATIONIS (0.70) EXISTINGINDUSTRYLANDPATTERN. PIN1IDENT (0.20)4X E.DRAWINGFILENAME:MKT-MLP06Krev5. 1 3 (cid:19)(cid:17)(cid:22)(cid:21)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) (0.40) (6X) (cid:19)(cid:17)(cid:27)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) (0.60) 6 4 (cid:19)(cid:17)(cid:22)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24)(6X) 0.65 0.10 C A B 1.30 0.05 C BOTTOMVIEW

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