Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F O D 8 May 2017 1 4 S e r i FOD814 Series, FOD817 Series e s , 4-Pin DIP Phototransistor Optocouplers F O D 8 Features Description 1 7 S • AC Input Response (FOD814) The FOD814 consists of two gallium arsenide infrared e • Current Transfer Ratio in Selected Groups: emitting diodes, connected in inverse parallel, driving a ri e silicon phototransistor output in a 4-pin dual in-line FOD814: 20–300% FOD817: 50–600% s package. The FOD817 Series consists of a gallium — FOD814A: 50–150% FOD817A: 80–160% arsenide infrared emitting diode driving a silicon FOD817B: 130–260% phototransistor in a 4-pin dual in-line package. 4- P FOD817C: 200–400% i n FOD817D: 300–600% D • Minimum BVCEO of 70 V Guaranteed IP • Safety and Regulatory Approvals P h – UL1577, 5,000 VAC for 1 Minute RMS o – DIN EN/IEC60747-5-5 to t r Applications a n s FOD814 Series i s • AC Line Monitor to r • Unknown Polarity DC Sensor O • Telephone Line Interface p t FOD817 Series o c • Power Supply Regulators o u • Digital Logic Inputs p l • Microprocessor Inputs e r s Functional Block Diagram ANODE, CATHODE1 4COLLECTOR ANODE 1 4 COLLECTOR CATHODE, ANODE2 3EMITTER CATHODE 2 3 EMITTER 4 FOD814 FOD817 1 Figure 1. Schematic Figure 2. Package Outlines ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 2.9

F O Safety and Insulation Ratings D 8 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit 1 4 data. Compliance with the safety ratings shall be ensured by means of protective circuits. S e Parameter Characteristics r i e Installation Classifications per DIN VDE < 150 VRMS I–IV s, 0110/1.89 Table 1, For Rated Mains Voltage < 300 V I–III F RMS O Climatic Classification 30/110/21 D 8 Pollution Degree (DIN VDE 0110/1.89) 2 1 7 Comparative Tracking Index 175 S e r i e s Symbol Parameter Value Unit — Input-to-Output Test Voltage, Method A, V x 1.6 = V , 4 Type and Sample Test with t = 10 s, PartIiOaRl DMischarge <P R5 pC 1360 Vpeak -P m V i PR n Input-to-Output Test Voltage, Method B, V x 1.875 = V , 100% Production Test with t = 1 s, PartiaIlO DRiMscharge < 5 pPCR 1560 Vpeak D m I P V Maximum Working Insulation Voltage 850 V IORM peak P h V Highest Allowable Over-Voltage 8000 V IOTM peak o t External Creepage  7 mm o t r External Clearance  7 mm a n External Clearance (for Option W, 0.4" Lead Spacing)  10 mm s i s DTI Distance Through Insulation (Insulation Thickness)  0.4 mm t o T Case Temperature(1) 175 °C r S O I Input Current(1) 400 mA p S,INPUT t P Output Power(1) 700 mW o S,OUTPUT c R Insulation Resistance at T , V = 500 V(1) >1011  o IO S IO u p Note: le r 1. Safety limit values – maximum values allowed in the event of a failure. s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 2.9 2

F O D Absolute Maximum Ratings 81 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 4 S operable above the recommended operating conditions and stressing the parts to these levels is not recommended. e In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. r i The absolute maximum ratings are stress ratings only. T = 25°C Unless otherwise specified. e A s , Value F Symbol Parameter Unit O FOD814 FOD817 D 8 Total Device 1 7 TSTG Storage Temperature -55 to +150 °C S e TOPR Operating Temperature -55 to +105 -55 to +110 °C ri e T Junction Temperature -55 to +125 °C s J — T Lead Solder Temperature 260 for 10 seconds °C SOL 4 JC Junction-to-Case Thermal Resistance 210 °C/W -P PTOT Total Device Power Dissipation 200 mW in EMITTER D I P I Continuous Forward Current ±50 50 mA F P V Reverse Voltage 6 V h R o Power Dissipation 70 mW t o P D t Derate Above 100°C 1.7 mW/°C r a n DETECTOR s i V Collector-Emitter Voltage 70 V s CEO t o VECO Emitter-Collector Voltage 6 V r O I Continuous Collector Current 50 mA C p t Collector Power Dissipation 150 mW o P c C Derate Above 90°C 2.9 mW/°C o u p l e r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 2.9 3

F O Electrical Characteristics D 8 TA = 25°C unless otherwise specified. 1 4 Individual Component Characteristics S e Symbol Parameter Device Test Conditions Min. Typ. Max. Unit r i e EMITTER s , FOD814 I = ±20 mA 1.2 1.4 F V Forward Voltage F V O F FOD817 I = 20 mA 1.2 1.4 D F 8 I Reverse Current FOD817 V = 4.0 V 10 µA 1 R R 7 FOD814 V = 0, f = 1 kHz 50 250 S Ct Terminal Capacitance pF e FOD817 V = 0, f = 1 kHz 30 250 r i e DETECTOR s — FOD814 V = 20 V, I = 0 100 CE F I Collector Dark Current nA CEO 4 FOD817 VCE = 20 V, IF = 0 100 -P Collector-Emitter Breakdown FOD814 IC = 0.1 mA, IF = 0 70 in BVCEO Voltage FOD817 I = 0.1 mA, I = 0 70 V D C F I P Emitter-Collector Breakdown FOD814 IE = 10 µA, IF = 0 6 BV V P ECO Voltage FOD817 I = 10 µA, I = 0 6 h E F o t o t r DC Transfer Characteristics a n s Symbol Parameter Device Test Conditions Min. Typ. Max. Unit i s t FOD814 20 300 o I = ±1 mA, V = 5 V r FOD814A F CE 50 150 O p FOD817 50 600 t o CTR Current Transfer Ratio(2) FOD817A 80 160 % c o FOD817B I = 5 mA, V = 5 V 130 260 u F CE p FOD817C 200 400 le r s FOD817D 300 600 Collector-Emitter Saturation FOD814 IF = ±20 mA, IC = 1 mA 0.1 0.2 V V CE(SAT) Voltage FOD817 I = 20 mA, I = 1 mA 0.1 0.2 F C AC Transfer Characteristics Symbol Parameter Device Test Conditions Min. Typ. Max. Unit V = 5 V, I = 2 mA, f Cut-Off Frequency FOD814 CE C 15 80 kHz C R = 100 , -3 dB L FOD814, t Response Time (Rise) 4 18 µs r FOD817 V = 2 V, I = 2 mA, CE C FOD814, RL = 100 (3) t Response Time (Fall) 3 18 µs f FOD817 Notes: 2. Current Transfer Ratio (CTR) = I / I x 100%. C F 3. For test circuit setup and waveforms, refer to page 7. ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 2.9 4

F O Electrical Characteristics (Continued) D 8 TA = 25°C unless otherwise specified. 1 4 Isolation Characteristics S e r Symbol Parameter Device Test Conditions Min. Typ. Max. Unit i e s VISO IVnoplutatg-Oe(u4t)put Isolation FFOODD881147, fI I-=O 6 0 2H µzA, t = 1 minute, 5000 VACRMS , FO D R Isolation Resistance FOD814, V = 500 V 5x1010 1x1011  8 ISO FOD817 I-O DC 1 7 FOD814, S CISO Isolation Capacitance VI-O = 0, f = 1 MHz 0.6 1.0 pf e FOD817 r i e Note: s 4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. — 4 - P i n D I P P h o t o t r a n s i s t o r O p t o c o u p l e r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 2.9 5

F O Typical Electrical/Optical Characteristic Curves D 8 TA = 25°C unless otherwise specified. 1 4 W) W) S 200 200 m m e ( ( r C C i P P e N N s TIO 150 TIO 150 , F A A O P P SI SI D S S 8 R DI 100 R DI 100 17 E E W W S O O e P P r R 50 R 50 ie O O T T s EC EC — L L L L O 0 O 0 4 C C - -55-40 -20 0 20 40 60 80 100 120 -55-40 -20 0 20 40 60 80 100 120 P i AMBIENT TEMPERATURE TA (°C) AMBIENT TEMPERATURE TA (°C) n Fig. 3 Collector Power Dissipation Fig. 4 Collector Power Dissipation D vs. Ambient Temperature (FOD814) vs. Ambient Temperature (FOD817) IP P (FOD814) h 6 100 o N Ic=0.5mA t O Ta=25°C o URATIV) 5 13mmAA (mA) TA = 7150o5CoC tran R SAT(sat) ( 4 75mmAA ENT IF 10 50oC sist E E R o MITTE VC 3 CUR 02o5CoC r O TOR-EOLTAG 2 WARD 1 --3505ooCC ptoc CV R o OLLE 1 FO up C le 0 0.1 r 0 2.5 5.0 7.5 10.0 12.5 15.0 0.5 1.0 1.5 2.0 s FORWARD CURRENT IF (mA) FORWARD VOLTAGE VF (V) Fig. 5 Collector-Emitter Saturation Voltage Fig. 6 Forward Current vs. Forward Voltage vs. Forward Current 100 140 %) VC E=5V A) TA = 110oC TR ( 120 Ta=25°C T I(mF 10 5705oCoC ATIO C 100 FOD817 N R RE R 80 R 25oC E D CU -300oCoC ANSF 60 WAR 1 -55oC T TR 40 FOD814 R N O E F R 20 R U C 0.1 0 0.5 1.0 1.5 2.0 0.1 0.2 0.5 1 2 5 10 20 50 100 FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (mA) Fig. 7 Forward Current vs. Forward Voltage Fig. 8 Current Transfer Ratio (FOD817) vs. Forward Current ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 2.9 6

F O Typical Electrical/Optical Characteristic Curves (Continued) D 8 TA = 25°C unless otherwise specified. 1 4 50 30 S e mA) 40 I F =30mA Ta=25°C (mA)C 25I IF = 30mA 20mA Ta = 25°C ries T I(C ENT I 20 Pc(MAX.) , FO EN 30 20mA Pc(MAX.) RR D OR CURR 20 10mA CTOR CU 1150 10mA 817 S T E e LEC 10 5mA OLL 5mA rie OL C 5 s C 1mA — 0 0 4 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 - P COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) in Fig. 9 Collector Current Fig. 10 Collector Current vs. D vs. Collector-Emitter Voltage (FOD814) Collector-Emitter Voltage (FOD817) I P P h ENT TRANSFER O (%) 11118024600000 FIVFOC =ED 1=8 m51VA4 TTER SATURATIONV(sat) (V)CE 0000....00116802 IIFC == 210mmAA ototransistor TIVE CURRRATI 4600 FIVFOC =ED 5=8m 15AV7 ECTOR-EMIVOLTAGE 0.04 Optoco A L 0.02 L 20 L u E O p R C 0 0.00 le -60 -40 -20 0 20 40 60 80 100120 -60 -40 -20 0 20 40 60 80 100120 r s AMBIENT TEMPERATURE TA (°C) AMBIENT TEMPERATURE TA (°C) Fig. 11 Relative Current Transfer Fig. 12 Collector-Emitter Saturation Voltage Ratiovs. Ambient Temperature vs. Ambient Temperature 100 100 W) W) m m ( ( ED 80 ED 80 L L P P N N O O TI 60 TI 60 A A P P SI SI DIS 40 DIS 40 R R E E W W 20 20 O O P P D D E E L 0 L 0 -55-40 -20 0 20 40 60 80 100 120 -55-40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) AMBIENT TEMPERATURE TA (°C) Fig. 13 LED Power Dissipation vs. Fig. 14 LED Power Dissipation vs. Ambient Temperature (FOD814) Ambient Temperature (FOD817) ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 2.9 7

F O Typical Electrical/Optical Characteristic Curves (Continued) D 8 TA = 25°C unless otherwise specified. 1 4 S e r i e s 100 , VC E =2V VCE = 2V F 50 Ic=2mA Ic =2mA O μONSE TIME (s) 120025 Ta=25°C tr tdtstf GE GAIN A(dB)V-100 RL =10k 1k Ta =10205°C D817 Serie ESP 1 OLTA s — R 0.5 V 4 0.2 -P i 0.1 -20 n 0.1 0.2 0.5 1 2 5 10 0.2 0.5 152 10 100 1000 D LOAD RESISTANCE RL (kΩ) FREQUENCY f (kHz) IP Fig. 15 Response Time Fig. 16 Frequency Response P vs. Load Resistance h o t o A)10000 t n r ( a CEO 1000 VCE = 20V ns T I is N t E 100 o R r R U O K C 10 p R to A D 1 c R o O u CT 0.1 p LE le L r CO 0.01 s -60 -40 -20 0 20 40 60 80 100120 AMBIENT TEMPERATURE TA (°C) Fig. 17 Collector Dark Current vs. Ambient Temperature Test Circuit for Response Time Test Circuit for Frequency Response Vcc Input Vcc Output RD RL Output Input RD RL Output 10% 90% td ts tr tf ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 2.9 8

F O Reflow Profile D 8 1 4 S Max. Ramp-up Rate = 3°C/S e TP Max. Ramp-down Rate = 6°C/S r 260 i e 240 tP s 220 TL , F O 200 Tsmax D tL 8 C) 180 Preheat Area 1 7 ° 160 ( Tsmin S ure 140 ts er at 120 ie er 100 s p — m 80 4 Te 60 -P 40 i n 20 D I 0 P 120 240 360 P h Time 25°C to Peak o t o Time (seconds) t r a n s i s Profile Feature Pb-Free Assembly Profile to r Temperature Min. (Tsmin) 150°C O p Temperature Max. (Tsmax) 200°C t o Time (t ) from (Tsmin to Tsmax) 60–120 seconds c S o Ramp-up Rate (t to t ) 3°C/second max. u L P p Liquidous Temperature (TL) 217°C le r Time (t ) Maintained Above (T ) 60–150 seconds s L L Peak Body Package Temperature 260°C +0°C / –5°C Time (t ) within 5°C of 260°C 30 seconds P Ramp-down Rate (T to T ) 6°C/second max. P L Time 25°C to Peak Temperature 8 minutes max. Figure 20. Reflow Profile ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 2.9 9

F O Ordering Information D 8 1 Part Number Package Packing Method 4 S FOD817X DIP 4-Pin Tube (100 units per tube) e r FOD817XS SMT 4-Pin (Lead Bend) Tube (100 units per tube) i e s FOD817XSD SMT 4-Pin (Lead Bend) Tape and Reel (1,000 units per reel) , F FOD817X300 DIP 4-Pin, DIN EN/IEC60747-5-5 option Tube (100 units per tube) O D FOD817X3S SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option Tube (100 units per tube) 8 1 FOD817X3SD SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option Tape and Reel (1,000 units per reel) 7 FOD817X300W DIP 4-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 option Tube (100 units per tube) S e r Note: i e The product orderable part number system listed in this table also applies to the FOD814 products. s — "X" denotes the Current Transfer Ratio (CTR) options 4 - P i n Marking Information D I P P h o 4 5 to t r a n s i s V X ZZ Y 6 t o r 3 O 817 2 p t o c o 1 u Figure 21. Top Mark p l e r s Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on parts ordered with this option) 4 One-Digit Year Code, e.g., ‘5’ 5 Two-Digit Work Week, Ranging from ‘01’ to ‘53’ 6 Assembly Package Code Y = Manufactured in Thailand YA = Manufactured in China ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 2.9 10

F O Carrier Tape Specifications D 8 1 Ø1.55±0.05 P2 P0 1.75±0.1 4 S e r i e s , F F O W D B0 8 1 7 A0 S e P1 0.3±0.05 ri e s — K0 4 - P i n Figure 22. Carrier Tape Specification D I P P Symbol Description Dimensions in mm (inches) h o W Tape wide 16 ± 0.3 (0.63) to t P0 Pitch of sprocket holes 4 ± 0.1 (0.15) ra n F Distance of compartment 7.5 ± 0.1 (0.295) s P2 2 ± 0.1 (0.079) is t o P Distance of compartment to compartment 12 ± 0.1 (0.472) 1 r O A0 Compartment 10.45 ± 0.1 (0.411) p B0 5.30 ± 0.1 (0.209) to c K0 4.25 ± 0.1 (0.167) o u p l e r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 2.9 14

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: FOD817C300 FOD817C3SD FOD817C FOD817CS FOD817C300W FOD817C3S FOD817CSD