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F O D 4 October 2016 1 0 , F O D FOD410, FOD4108, FOD4116, FOD4118 4 1 6-Pin DIP High dv/dt Zero-Cross Triac Drivers 0 8 , F O D Features Description 4 1 • 300 mA On-State Current The FOD410, FOD4108, FOD4116 and FOD4118 1 6 • Zero-Voltage Crossing devices consist of an infrared emitting diode coupled to a , • High Blocking Voltage hybrid triac formed with two inverse parallel SCRs which FO – 600 V (FOD410, FOD4116) form the triac function capable of driving discrete triacs. D – 800 V (FOD4108, FOD4118) The FOD4116 and FOD4118 utilize a high efficiency 4 1 • High Trigger Sensitivity infrared emitting diode which offers an improved trigger 1 8 – 1.3 mA (FOD4116, FOD4118) sensitivity. These devices are housed in a standard 6-pin — dual in-line (DIP) package. – 2 mA (FOD410, FOD4108) 6 • High Static dv/dt (10,000 V/μs) - P • Safety and Regulatory Approvals: in – UL1577, 5,000 VACRMS for 1 Minute D – DIN-EN/IEC60747-5-5 I P H Applications i g h • Solid-State Relays d • Industrial Controls v • Lighting Controls /d t • Static Power Switches Z • AC Motor Starters e r o - C r o s Functional Schematic Package Outlines s T r i a c D r i ANODE 1 6 MAIN TERM. v 6 e 6 r s 1 CATHODE 2 5 NC* 1 6 N/C 3 4 MAIN TERM. 1 Figure 2. Package Outlines *DO NOT CONNECT (TRIAC SUBSTRATE) Figure 1. Schematic ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0

F O Safety and Insulation Ratings D 4 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit 1 0 data. Compliance with the safety ratings shall be ensured by means of protective circuits. , F O Parameter Characteristics D Installation Classifications per DIN VDE < 150 VRMS I–IV 41 0110/1.89 Table 1, For Rated Mains Voltage < 300 V I–IV 0 RMS 8 Climatic Classification 55/100/21 , F Pollution Degree (DIN VDE 0110/1.89) 2 O D Comparative Tracking Index 175 4 1 1 6 , F Symbol Parameter Value Unit O Input-to-Output Test Voltage, Method A, V x 1.6 = V , D Type and Sample Test with t = 10 s, PartIiOaRl DMischarge <P R5 pC 1360 Vpeak 4 m 1 VPR 1 Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 1594 V 8 100% Production Test with tm = 1 s, Partial Discharge < 5 pC peak — VIORM Maximum Working Insulation Voltage 850 Vpeak 6 - VIOTM Highest Allowable Over-Voltage 6000 Vpeak P i External Creepage  7 mm n D External Clearance  7 mm I P DTI Distance Through Insulation (Insulation Thickness)  0.4 mm H TS Case Temperature(1) 175 °C ig IS,INPUT Input Current(1) 400 mA h d P Output Power(1) 700 mW v S,OUTPUT / RIO Insulation Resistance at TS, VIO = 500 V(1) > 109  dt Z Note: e r 1. Safety limit values – maximum values allowed in the event of a failure. o - C r o s s T r i a c D r i v e r s ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 2

F O Absolute Maximum Ratings D 4 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- 1 0 ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- , F tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The O absolute maximum ratings are stress ratings only. T = 25°C unless otherwise specified. D A 4 Symbol Parameter Device Value Unit 1 0 T Storage Temperature All -55 to +150 °C 8 STG , F T Operating Temperature All -55 to +100 °C OPR O T Junction Temperature All -55 to +125 °C D J 4 TSOL Lead Solder Temperature All 260 for 10 sec °C 1 1 Total Device Power Dissipation @ 25°C All 500 mW 6 P , D(TOTAL) Derate Above 25°C All 6.6 mW/°C F O EMITTER D 4 IF Continuous Forward Current All 30 mA 1 1 VR Reverse Voltage All 6 V 8 Total Power Dissipation 25°C Ambient All 50 mW — PD(EMITTER) Derate Above 25°C All 0.71 mW/°C 6 - P DETECTOR i n FOD410, FOD4116 600 D V Off-State Output Terminal Voltage V DRM FOD4108, FOD4118 800 IP Peak Non-Repetitive Surge Current H ITSM (single cycle 60 Hz sine wave) All 3 A ig h ITM Peak On-State Current All 300 mA d Total Power Dissipation @ 25°C Ambient All 450 mW v PD(DETECTOR) /d Derate Above 25°C All 5.9 mW/°C t Z e r o - C r o s s T r i a c D r i v e r s ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 3

F O Electrical Characteristics D 4 TA = 25°C unless otherwise specified. 1 0 Individual Component Characteristics , F Symbol Parameter Test Conditions Device Min. Typ. Max. Unit O D EMITTER 4 1 VF Input Forward Voltage IF = 20 mA All 1.25 1.50 V 0 8 I Reverse Leakage Current V = 6 V All 0.0001 10 μA , R R F DETECTOR O D V = 600 V FOD410, 4 Peak Blocking Current Either I = 0, D FOD4116 1 I F 3 100 μA 1 D(RMS) Direction TA = 100°C(2) FOD4108, 6 VD = 800 V FOD4118 , F O FOD410, V = 600 V D D FOD4116 4 I Reverse Current T = 100°C 3 100 μA R(RMS) A 1 V = 800 V FOD4108, 1 D FOD4118 8 Critical Rate of Rise of I = 0 A(3) — dv/dt Off-State Voltage (FFigure 16) VD = VDRM All 10,000 V/μs 6 - Notes: P i n 2. Test voltage must be applied within dv/dt rating. D 3. This is static dv/dt. See Figure 16 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only. I P H i g h d v / d t Z e r o - C r o s s T r i a c D r i v e r s ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 4

F O Electrical Characteristics (Continued) D 4 TA = 25°C unless otherwise specified. 1 0 Transfer Characteristics , F Symbol Parameter Test Conditions Device Min. Typ. Max. Unit O D FOD410, 0.65 2.0 4 FOD4108 1 I LED Trigger Current Main Terminal Voltage = 5 V(4) mA 0 FT FOD4116, 8 0.65 1.3 , FOD4118 F O Peak On-State Voltage, V I = 300 mA peak, I = Rated I All 2.2 3 V D TM Either Direction TM F FT 4 1 I Holding Current, Either V = 3 V All 200 500 µA 1 H Direction T 6 , I Latching Current V = 2.2 V All 5 mA F L T O FOD410, D V = V = 424 VAC FOD4116, 4 tON Turn-On Time RM DM FOD4118 60 µs 11 8 PF = 1.0, VRM = VDM = 565 VAC FOD4108 — IT = 300 mA FOD410, 6 V = V = 424 VAC FOD4116, RM DM - tOFF Turn-Off Time FOD4118 52 µs P i n VRM = VDM = 565 VAC FOD4108 D Critical Rate of Rise of I V = 230 V , P dv/dtC Voltage at Current Com- I D = 300 mARMS All 10 V/µs H mutation D PK i g Critical Rate of Rise of h di/dtC On-State Current Com- VI D = = 3 20300 m VARMS, All 9 A/ms d mutation D PK v / d Critical Rate of t dv( )/dt Rise of Coupled I = 0 A, V V = 424 VAC All 10,000 V/µs Z IO T RM = DM e Input/Output Voltage r o Note: - C 4. All devices are guaranteed to trigger at an I value less than or equal to max I .Therefore, recommended operating r F FT o I lies between max I (2 mA for FOD410 and FOD4108 and 1.3 mA for FOD4116 and FOD4118) and the absolute s F FT s max IF (30 mA). T r i a Zero Crossing Characteristics c D Symbol Parameter Test Conditions Device Min. Typ. Max. Unit r i Inhibit Voltage v e V (MT1-MT2 Voltage IF = Rated IFT All 8 25 V rs INH above which device will not trigger) IDRM2 Leakage in Inhibit State IF = Rated IFT, Rated VDRM, Off-State All 20 200 µA Isolation Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit V Steady State Isolation ISO f = 60 Hz, t = 1 Minute(5) All 5,000 VAC Voltage RMS Note: 5. Isolation voltage, V , is an internal device dielectric breakdown rating. For this test, pins 1, 2 and 3 are common, ISO and pins 4, 5 and 6 are common. 5,000 VAC for 1 minute duration is equivalent to 6,000 VAC for 1 second RMS RMS duration. ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 5

F O Typical Application D 4 1 0 , Figure 3 shows a typical circuit for when hot line switch-ing is required. In this circuit the “hot” side of the line is F switched and the load connected to the cold or neutral side. The load may be connected to either the neutral or(cid:3) O D (cid:75)(cid:82)(cid:87)(cid:3)(cid:79)(cid:76)(cid:81)(cid:72)(cid:17)(cid:3) 4 (cid:53)(cid:76)(cid:81)(cid:3)(cid:76)(cid:86)(cid:3)(cid:70)(cid:68)(cid:79)(cid:70)(cid:88)(cid:79)(cid:68)(cid:87)(cid:72)(cid:71)(cid:3)(cid:86)(cid:82)(cid:3)(cid:87)(cid:75)(cid:68)(cid:87)(cid:3)(cid:44)(cid:41)(cid:3)(cid:76)(cid:86)(cid:3)(cid:72)(cid:84)(cid:88)(cid:68)(cid:79)(cid:3)(cid:87)(cid:82)(cid:3)(cid:87)(cid:75)(cid:72)(cid:3)(cid:85)(cid:68)(cid:87)(cid:72)(cid:71)(cid:3)(cid:44)(cid:41)(cid:55)(cid:3)(cid:82)(cid:73)(cid:3)(cid:87)(cid:75)(cid:72)(cid:3)(cid:83)(cid:68)(cid:85)(cid:87)(cid:15)(cid:3)(cid:21)(cid:3)(cid:80)(cid:36)(cid:3)(cid:73)(cid:82)(cid:85)(cid:3)(cid:41)(cid:50)(cid:39)(cid:23)(cid:20)(cid:19)(cid:3)(cid:68)(cid:81)(cid:71)(cid:3)(cid:41)(cid:50)(cid:39)(cid:23)(cid:20)(cid:19)(cid:27)(cid:15)(cid:3)(cid:20)(cid:17)(cid:22)(cid:3)(cid:80)(cid:36)(cid:3)(cid:73)(cid:82)(cid:85)(cid:3) 1 (cid:41)(cid:50)(cid:39)(cid:23)(cid:20)(cid:20)(cid:25)(cid:3)(cid:68)(cid:81)(cid:71)(cid:3)(cid:41)(cid:50)(cid:39)(cid:23)(cid:20)(cid:20)(cid:27)(cid:17)(cid:3)(cid:55)(cid:75)(cid:72)(cid:3)(cid:22)(cid:28)(cid:3)(cid:525)(cid:3)(cid:85)(cid:72)(cid:86)(cid:76)(cid:86)(cid:87)(cid:82)(cid:85)(cid:3)(cid:68)(cid:81)(cid:71)(cid:3)(cid:19)(cid:17)(cid:19)(cid:20)(cid:3)(cid:151)(cid:41)(cid:3)(cid:70)(cid:68)(cid:83)(cid:68)(cid:70)(cid:76)(cid:87)(cid:82)(cid:85)(cid:3)(cid:68)(cid:85)(cid:72)(cid:3)(cid:73)(cid:82)(cid:85)(cid:3)(cid:86)(cid:81)(cid:88)(cid:69)(cid:69)(cid:76)(cid:81)(cid:74)(cid:3)(cid:82)(cid:73)(cid:3)(cid:87)(cid:75)(cid:72)(cid:3)(cid:87)(cid:85)(cid:76)(cid:68)(cid:70)(cid:3)(cid:68)(cid:81)(cid:71)(cid:3)(cid:80)(cid:68)(cid:92)(cid:3)(cid:82)(cid:85)(cid:3)(cid:80)(cid:68)(cid:92)(cid:3) 0 8 (cid:81)(cid:82)(cid:87)(cid:3)(cid:69)(cid:72)(cid:3)(cid:81)(cid:72)(cid:70)(cid:72)(cid:86)(cid:86)(cid:68)(cid:85)(cid:92)(cid:3)(cid:71)(cid:72)(cid:83)(cid:72)(cid:81)(cid:71)(cid:76)(cid:81)(cid:74)(cid:3)(cid:88)(cid:83)(cid:82)(cid:81)(cid:3)(cid:87)(cid:75)(cid:72)(cid:3)(cid:83)(cid:68)(cid:85)(cid:87)(cid:76)(cid:70)(cid:88)(cid:79)(cid:68)(cid:85)(cid:3)(cid:87)(cid:85)(cid:76)(cid:68)(cid:70)(cid:3)(cid:68)(cid:81)(cid:71)(cid:3)(cid:79)(cid:82)(cid:68)(cid:71)(cid:3)(cid:88)(cid:86)(cid:72)(cid:17) , F O D 4 Rin 1 6 360 Ω 1 V HOT 1 CC 6 FOD4(cid:20)0 , 2 FOD4(cid:20)08 5 FKPF12N80 F FOD4(cid:20)16 39(cid:3)Ω(cid:10) O FOD4(cid:20)18 D 3 4 240 VAC 4 1 1 0.01μF 8 330 Ω — LOAD NEUTRAL 6 - P *For highly inductive loads (power factor < 0.5), change this value to 360 ohms. i n Figure 3. Hot-Line Switching Application Circuit D I P H i g h d v 240 VAC /d t R1 D1 Z e r 1 6 o VCC -C R FOD4(cid:20)0 r in 2 FOD4(cid:20)08 5 SCR o s FOD4(cid:20)16 SCR s FOD4(cid:20)18 360 Ω T 3 4 r i a c R2 D2 D r LOAD iv e r s Figure (cid:23). Inverse-Parallel SCR Driver Circuit Suggested method of firing two, back-to-back SCR’s with a Fairchild triac driver. Diodes can be 1N4001; resistors, R1 and R2, are optional 330 Ω. Note: This optoisolator should not be used to drive a load directly. It is intended to be a discrete triac driver device only. ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 6

F O Typical Performance Characteristics D 4 1 0 , 1.8 RENT 1.6 VNAoKrm =a 5liz.0e dV to TA = 25°C FO E (V) 1.6 R CUR 1.4 D41 G E 0 TA 1.4 GG 8 OL RI 1.2 , V -55°C T F D 1.2 D O – FORWAR 1.0 2855°°CC MALIZED LE 1.0 D4116 V F 0.8 OR 0.8 , N F – O 0.6 I FT 0.6 D 0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 4 1 IF – FORWARD CURRENT (mA) TA – AMBIENT TEMPERATURE (°C) 1 Figure (cid:24). Forward Voltage Figure (cid:25). Normalized LED Trigger Current 8 — (V ) vs. Forward Current (I ) (I ) vs. Ambient Temperature (T ) F F FT A 6 - 10000 100 P τ tD = t(IF/IFT 25°C) in mA) Duty Factor VF D= =6 04 0H0z VP-P D T ( 0.005 IP CURREN 1000 000...000521 DF = tτt TIME (μs) High ED 0.1 AY 10 d EAK L 100 00..52 – DEL v/d P D t pk) – t Ze If( ro - C 10 1 10-6 10-5 10-4 10-3 10-2 10-1 100 101 1 10 100 r o t – LED PULSE DURATION (s) IFT/IF – NORMALIZED IF (mA) s s Figure (cid:26). Peak LED Current Figure (cid:27). Trigger Delay Time T vs. Duty Factor, Tau r i a c 1.7 1000 D TH 1.6 VL = 250 VP-P riv ZED IF 1.5 FN o=r m60a lHizzed to DC T (mA) ers ALI EN 100 M 1.4 R R R O U – NC) 1.3 ATE C TH(D 1.2 N-ST 10 TA = 100°C TA = 25°C /IFPW) 1.1 – OM TH( 1.0 IT F I 0.9 1 0 200 400 600 800 1000 000 1 2 3 4 PW – PULSE WIDTH (μs) VTM – ON-STATE VOLTAGE (V) Figure (cid:28). Pulse Trigger Current Figure (cid:20)(cid:19). On-State Voltage (V ) vs. On-State Current (I ) TM TM ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 7

F O Typical Performance Characteristics (Continued) D 4 1 0 , RENT 22..02 Normalized to TA = 25°C URRENT 10 NVDo r=m 8a0liz0e Vd, tIoB DT A( μ=A 2) 5 °C FOD4 R C 1 G CU 1.8 ATE 08 I – NORMALIZED HOLDINH 1111....0246 – NORMALIZED OFF-STDRM 1 , FOD4116, FOD 0.8 I 0.1 4 -60 -40 -20 0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100 1 TA – AMBIENT TEMPERATURE (°C) TA – AMBIENT TEMPERATURE (°C) 1 8 Figure 1(cid:20). Normalized Holding Current Figure 1(cid:21). Normalized Off-State Current (IDRM) — (IH) vs. Ambient Temperature (TA) vs. Ambient Temperature (TA) 6 - P 1.2 2.5 in ORM) = V (T) / V (25°C)INHAINH 110...109 INFo =rm Raaltizeedd I FtoT TA = 25°C ORM) = I (T) / I (25°C)DRM2ADRM2 211...050 NIVFDo =Rrm MRa a=lti ze6ed0d 0I Ft oVT TA = 25°C DIP High dv/dt Ze V (NINH (NRM2 0.5 ro-C D 0.8-60(cid:3) -40(cid:3) -20(cid:3) 0(cid:3) 20(cid:3) 40(cid:3) 60(cid:3) 80 100 I 0.0-60 -40 -20 0 20 40 60 80 100 ros TA – AMBIENT TEMPERATURE (°C) TA – AMBIENT TEMPERATURE (°C) s Figure (cid:20)(cid:22). Normalized Inhibit Voltage (VINH) Figure 1(cid:23). Normalized Leakage in Inhibit State T r vs. Ambient Temperature (TA) (IDRM2) vs. Ambient Temperature (TA) ia c D 350 r ITP = f(TA) iv A) e T (m 300 rs N E RR 250 U C E T 200 A T S N- O 150 K A E P – 100 P T I 50 -60 -40 -20 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C)(cid:3) Figure 1(cid:24). Current Reduction ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 8

F O D 4 1 0 , F O 27(cid:3)(cid:525) 1000(cid:3)(cid:525) D VDRM/VRRM SELECT 2 W 10 W 41 0 WIREWOUND 8 X100 PROBE 6 , 1 F DIFFERENTIAL DUT 20(cid:3)k(cid:525) 2W 0.33(cid:3)(cid:88)(cid:41) 1000 V 0.047(cid:3)(cid:81)(cid:41) O PREAMP 2 1000 V D X100 PROBE 4 4 1 1 470 pF 6 , F d(cid:89) 1 (cid:48)(cid:525)(cid:3)2W EACH O MOUNT DUT ON dt 0.001(cid:3)(cid:81)(cid:41) TEMPERATURE CONTROLLED VERNIER 100(cid:3)(cid:525) D Cu PLATE 2 W 4 0.005(cid:3)(cid:81)(cid:41) 1 1 1.2 (cid:48)(cid:525) 8 82(cid:3)(cid:3)(cid:525) 0.01(cid:3)(cid:81)(cid:41) — 2 W 2 W POWER 6 TEST - 0.047(cid:3)(cid:81)(cid:41) P i n 1N914 0.1(cid:3)(cid:81)(cid:41) D I P RFP4N100 20 V 56(cid:3)(cid:525) 0.47(cid:3)(cid:81)(cid:41) 0-1000 V H 10 mA ig 2 W h 1N967A fP =W 1 =0 1H0z0 μs 1(cid:3)(cid:78)(cid:525) 1/4 W 18 V dv 50 P ULSE / d GENERATOR t Z ALL COMPONENTS ARE NON-INDUCTIVE UNLESS SHOWN e r o - C Figure (cid:20)(cid:25). Circuit for Static(cid:3)dd(cid:89)t Measurement of Power Thyristors ro s s T r i a c D r i v e r s ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 9

F O D 4 1 Reflow Profile 0 , F O 245 °C, 10 to 30 seconds D 300 4 1 250 260°C peak 0 8 C) , °e ( 200 FO r u 150 D perat 100 Time above 183°C, < 160 seconds 41 m 1 Te 50 Ramp up = 2 to 10°C/second 6, F 0 O 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 D 4 Time (Minute) 1 1 •Peak reflow temperature: 26(cid:19)°C (package surface temperature) 8 •Time of temperature higher than 18(cid:22)°C for 160 seconds or less — •One time soldering reflow is recommende(cid:71) 6 - P i n Figure 1(cid:26). Reflow Profile D I P H i g h d v / d t Z e r o - C r o s s T r i a c D r i v e r s ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 10

F O Ordering Information D 4 1 Part Number Package Packing Method 0 , FOD410 DIP 6-Pin Tube (50 Units) F O FOD410S SMT 6-Pin (Lead Bend) Tube (50 Units) D 4 FOD410SD SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) 1 0 FOD410V DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) 8 , FOD410SV SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) F O FOD410SDV SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) D 4 FOD410TV DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) 1 1 6 , F Note: O 6. The product orderable part number system listed in this table also applies to the FOD4108, FOD4116, and FOD4118 D 4 product families. 1 1 8 — Marking Information 6 - P i n 1 D I P (cid:41)(cid:50)(cid:39)(cid:23)(cid:20)(cid:19)(cid:3)(cid:3) 2(cid:3) H i g h V (cid:59)(cid:3)(cid:3)(cid:60)(cid:60)(cid:3)(cid:3)(cid:3)(cid:39)(cid:3) 6 d (cid:3)(cid:3) v / d t Z 3 4 5 e r o - Figure 18. Top Mark C r o s s Table 1. Top Mark Definitions T r 1 Fairchild Logo i a c 2 Device Number D 3 VDE mark. DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) r i v 4 One-Digit Year Code, e.g., “6” e r s 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 11

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