Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F O D 3 October 2011 1 5 0 — FOD3150 H i g High Noise Immunity, 1.0A Output Current, h N Gate Drive Optocoupler o i s e I m Features Description m ■ High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive u n minimum common mode rejection Optocoupler, capable of driving most 800V/20A i t ■ Use of P-channel MOSFETs at output stage enables IGBT/MOSFET. It is ideally suited for fast switching y, output voltage swing close to the supply rail driving of power IGBT and MOSFETs used in motor 1 . ■ Wide supply voltage range from 15V to 30V control inverter applications, and high performance 0A ■ Fast switching speed power system. O – 500ns max. propagation delay It utilizes Fairchild’s patented coplanar packaging u t – 300ns max. pulse width distortion technology, Optoplanar®, and optimized IC design to p u ■ Under Voltage LockOut (UVLO) with hysteresis achieve high noise immunity, characterized by high t ■ Extended industrial temperate range, -40°C to 100°C common mode rejection. C u temperature range It consists of a gallium aluminum arsenide (AlGaAs) light r r ■ Safety and regulatory approvals emitting diode optically coupled to an integrated circuit e n – UL1577, 5000 VRMS for 1 min. with a high-speed driver for push-pull MOSFET output t, – IEC60747-5-2 stage. G ■ >8.0mm clearance and creepage distance (option ‘T’) a t e Applications D Related Resources r i ■ Industrial inverter v ■ FOD3120, 2.5A Output Current, Gate Drive e ■ Uninterruptible power supply Optocoupler Datasheet O ■ Induction heating p ■ www.fairchildsemi.com/products/opto/ t ■ Isolated IGBT/Power MOSFET gate drive o c o u p l e r Functional Block Diagram Package Outlines NC 1 8 V CC 8 ANODE 2 7 V O2 1 CATHODE 3 6 V O1 NC 4 5 V EE 8 8 1 Note: 1 A 0.1µF bypass capacitor must be connected between pins 5 and 8. ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4

F O Truth Table D 3 1 V –V “Positive Going” V –V “Negative Going” CC EE CC EE 5 LED (Turn-on) (Turn-off) V 0 O — Off 0V to 30V 0V to 30V Low H On 0V to 11V 0V to 9.5V Low i g h On 11V to 13.5V 9.5V to 12V Transition N On 13.5V to 30V 12V to 30V High o i s e I m Pin Definitions m u n Pin # Name Description i t y 1 NC Not Connected , 1 2 Anode LED Anode .0 A 3 Cathode LED Cathode O 4 NC Not Connected u t p 5 VEE Negative Supply Voltage u t 6 VO2 Output Voltage 2 (internally connected to VO1) C u 7 VO1 Output Voltage 1 r r 8 V Positive Supply Voltage e CC n t , G a t e D r i v e O p t o c o u p l e r ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 2

F O Safety and Insulation Ratings D 3 As per IEC 60747-5-2. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data. 1 Compliance with the safety ratings shall be ensured by means of protective circuits. 5 0 — Symbol Parameter Min. Typ. Max. Unit H Installation Classifications per DIN VDE 0110/1.89 Table 1 i g For Rated Main Voltage < 150Vrms I–IV h For Rated Main Voltage < 300Vrms I–IV N o For Rated Main Voltage < 450Vrms I–III is e For Rated Main Voltage < 600Vrms I–III I m Climatic Classification 55/100/21 m u Pollution Degree (DIN VDE 0110/1.89) 2 n i CTI Comparative Tracking Index 175 t y V Input to Output Test Voltage, Method b, 1669 , 1 PR . V x 1.875 = V , 100% Production Test with 0 IORM PR A tm = 1 sec., Partial Discharge < 5pC O Input to Output Test Voltage, Method a, 1335 u VIORM x 1.5 = VPR, Type and Sample Test with tp tm = 60 sec.,Partial Discharge < 5 pC u t V Max Working Insulation Voltage 890 V C IORM peak u V Highest Allowable Over Voltage 6000 V r IOTM peak r e External Creepage 8 mm n t External Clearance 7.4 mm , G a External Clearance (for Option T-0.4” Lead Spacing) 10.16 mm t e Insulation Thickness 0.5 mm D r Safety Limit Values – Maximum Values Allowed in the i v Event of a Failure e O T Case Temperature 150 °C Case p t I Input Current 25 mA o S,INPUT c P Output Power (Duty Factor ≤ 2.7%) 250 mW o S,OUTPUT u R Insulation Resistance at T , V = 500V 109 Ω p IO S IO l e r ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 3

F O Absolute Maximum Ratings (T = 25ºC unless otherwise specified) D A 3 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 1 operable above the recommended operating conditions and stressing the parts to these levels is not recommended. 5 0 In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. — The absolute maximum ratings are stress ratings only. H Symbol Parameter Value Units ig h T Storage Temperature -55 to +125 ºC STG N T Operating Temperature -40 to +100 ºC o OPR i s T Junction Temperature -40 to +125 ºC e J I T Lead Wave Solder Temperature 260 for 10sec ºC m SOL (refer to page 19 for reflow solder profile) m u I Average Input Current 25 mA n F(AVG) i t V Reverse Input Voltage 5 V y R , I Peak Output Current(1) 1.5 A 1 O(PEAK) . 0 V – V Supply Voltage 0 to 35 V A CC EE O V Peak Output Voltage 0 to V V O(PEAK) CC u tR(IN), tF(IN) Input Signal Rise and Fall Time 500 ns tp u PDI Input Power Dissipation(2)(4) 45 mW t C PDO Output Power Dissipation(3)(4) 250 mW u r r e n t Recommended Operating Conditions , G The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended a t operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not e recommend exceeding them or designing to absolute maximum ratings. D r i v Symbol Parameter Value Units e O T Ambient Operating Temperature -40 to +100 °C A p VCC – VEE Power Supply 15 to 30 V to c IF(ON) Input Current (ON) 7 to 16 mA o u VF(OFF) Input Voltage (OFF) 0 to 0.8 V p l e r Isolation Characteristics Apply over all recommended conditions, typical value is measured at T = 25ºC A Symbol Parameter Conditions Min. Typ. Max. Units V Input-Output Isolation T = 25ºC, R.H.< 50%, t = 1.0min, 5000 V ISO A RMS Voltage I ≤ 10µA, 50Hz(5)(6) I-O R Isolation Resistance V = 500V(5) 1011 Ω ISO I-O C Isolation Capacitance V = 0V, Freq = 1.0MHz(5) 1 pF ISO I-O ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 4

F O Electrical Characteristics D 3 Apply over all recommended conditions, typical value is measured at VCC = 30V, VEE = Ground, TA = 25°C 1 unless otherwise specified. 5 0 — Symbol Parameter Conditions Min. Typ. Max. Units H V Input Forward Voltage I = 10mA 1.2 1.5 1.8 V F F i g ∆(VF / TA) Temperature Coefficient of -1.8 mV/ºC h Forward Voltage N o BV Input Reverse Breakdown I = 10µA 5 V R R i s Voltage e CIN Input Capacitance f = 1MHz, VF = 0V 60 pF Im I High Level Output Current(1) V = V – 0.75V 0.2 A m OH O CC u VO = VCC – 4V 1.0 n IOL Low Level Output Current(1) VO = VCC + 0.75V 0.2 A ity VO = VCC + 4V 1.0 , 1 . 0 VOH High Level Output Voltage IF = 10mA, IO = -1A VCC – 4V VCC – 6V V A IF = 10mA, IO = -100mA VCC – 0.5V VCC – 0.1V O u V Low Level Output Voltage I = 0mA, I = 1A V + 6V V + 4V V OL F O EE EE t p I = 0mA, I = 100mA V + 0.1V V + 0.5V u F O EE EE t ICCH High Level Supply Current VO = Open, IF = 7 to 16mA 2.8 5 mA C u ICCL Low Level Supply Current VO = Open, VF = 0 to 0.8V 2.8 5 mA r r I Threshold Input Current I = 0mA, V > 5V 2.3 5.0 mA e FLH O O n Low to High t , V Threshold Input Voltage I = 0mA, V < 5V 0.8 V G FHL O O a High to Low t e VUVLO+ Under Voltage Lockout IF = 10mA, VO > 5V 11 12.7 13.5 V D VUVLO– Threshold IF = 10mA, VO < 5V 9.5 11.2 12.0 V riv UVLO Under Voltage Lockout 1.5 V e HYS Threshold Hysteresis O p t o c o u p l e r ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 5

F O Switching Characteristics D 3 Apply over all recommended conditions, typical value is measured at VCC = 30V, VEE = Ground, TA = 25°C 1 5 unless otherwise specified. 0 — Symbol Parameter Conditions Min. Typ. Max. Units H tPHL Propagation Delay Time to Logic IF = 7mA to 16mA, 100 275 500 ns ig Low Output Rg = 20Ω, Cg =10nF, h f = 10kHz, Duty Cycle = 50% N t Propagation Delay Time to Logic 100 255 500 ns PLH o High Output i s e PWD Pulse Width Distortion, 20 300 ns I | t – t | m PHL PLH m PDD Propagation Delay Difference -350 350 ns u (Skew) Between Any Two Parts or n Channels, (t – t )(7) it PHL PLH y , t Output Rise Time (10% – 90%) 60 ns 1 r . 0 tf Output Fall Time (90% – 10%) 60 ns A t UVLO Turn On Delay I = 10mA , V > 5V 1.6 µs O UVLO ON F O u t UVLO Turn Off Delay I = 10mA , V < 5V 0.4 µs t UVLO OFF F O p u | CM | Common Mode Transient T = 25°C, V = 30V, 20 50 kV/µs H A CC t Immunity at Output High I = 7 to 16mA, V = 2000V(8) C F CM u | CML | ICmommumnoitny aMt oOduet pTruatn Lsoiewnt TVA = =25 2°0C0, 0VVC(C9) = 30V, VF = 0V, 20 50 kV/µs rre CM n t , G a t e Notes: D 1.Maximum pulse width = 10µs, maximum duty cycle = 0.2% ri v e 2. Derate linearly above 87°C, free air temperature at a rate of 0.77mW/°C O 3. No derating required across temperature range. p t o 4. Functional operation under these conditions is not implied. Permanent damage may occur if the device is c subjected to conditions outside these ratings. o u p 5. Device is considered a two terminal device: Pins 2 and 3 are shorted together and Pins 5, 6, 7 and 8 are shorted l e together. r 6. 5,000 V for 1 minute duration is equivalent to 6,000 VAC for 1 second duration. RMS RMS 7. The difference between t and t between any two FOD3150 parts under same test conditions. PHL PLH 8. Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of the common mode impulse signal, Vcm, to assure that the output will remain high (i.e. V > 15.0V). O 9. Common mode transient immunity at output low is the maximum tolerable positive dVcm/dt on the leading edge of the common pulse signal, Vcm, to assure that the output will remain low (i.e. V < 1.0V). O ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 6

F O Typical Performance Curves D 3 1 Fig. 2 Output High Voltage Drop vs. Ambient Temperature 5 VOLTAGEDROP(V) -000...F505ig. 1 Output High Voltage Drop vs. Output FDIVVFHCEru=eCEtiyq=g7=uCht0e1oynV5 c1cCltye6omu==3rA200rV5.e10%nHzt VOLTAGEDROP(V) --000...010005 VVIIFOCE==CE7=-=m1010AV05VmtotAo163m0VA 0 — High N HIGH TA=-40°C TPUT -0.15 ois UT -1.0 OU e -V)-OUTPCC -1.5 TA=25°C TA=100°C V)-HIGHCC --00..2250 Immu (VOH -2.00.00 0.25 0.50 0.75 1.00 1.25 1.50 (V-OH -0.30-40 -20 0 20 40 60 80 100 nity IOH-OUTPUTHIGHCURRENT(A) TA-AMBIENTTEMPERATURE(°C) , 1 . 0 A Fig. 3 Output Low Voltage vs. Output Low Current Fig. 4 Output Low Voltage vs. Ambient Temperature O 0.25 2.0 Frequency=250Hz u V-OUTPUTLOWVOLTAGE(V)OL 011...505 VVDVuFCECEt(Oy=F=CF0)1yV=5cVl-e3t.o=0V3990toV.90%.8V TA=25°C TTAA==1-4000°°CC V-OUTPUTLOWVOLTAGE(V)OL 0000....01125050 VVVIOCEF(CE=O=F=1F0)010=5VmV-3AtVot3o0V0.8V tput Current, Gate D 0.00.00 0.25 0.50 0.75 1.00 1.25 1.50 0.00-40 -20 0 20 40 60 80 100 ri IOL-OUTPUTLOWCURRENT(A) TA-AMBIENTTEMPERATURE(°C) ve O p t o Fig. 5 Supply Current vs. Ambient Temperature Fig. 6 Supply Current vs. Supply Voltage c 3.6 3.6 o VCC=30V IF=10mA(forICCH) u T(mA) 33..24 IVIFFE==E=01m00mAVA(fo(forrICICCLC)H) T(mA) 3.2 IVFE=E=0m0A,T(fAor=2IC5C°LC) pler N N E E R R R 3.0 R U U PLYC 2.8 ICCH PLYC 2.8 ICCH SUP 2.6 ICCL SUP ICCL - - 2.4 ICC ICC 2.4 2.2 2.0 -40 -20 0 20 40 60 80 100 15 20 25 30 TA-AMBIENTTEMPEATURE(°C) VCC-SUPPLYVOLTAGE(V) ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 7

F O Typical Performance Curves (Continued) D 3 1 5 Fig. 7 Low to High Input Current Threshold vs. Fig. 8 Propagation Delay vs. Supply Voltage 0 RESHOLD(mA) 34..50 VVOCEuCEtp==u10t5V=VOtpoe3n0V Ambient Temperature AY(ns) 345000 ITRDfF=AgU==T1=1Y02025k0CmHΩ°YACz,CCLgE==1500n%F — High ENTTH 3.0 ONDEL 300 tPHL No HIGHCURR 22..05 PROPAGATI 220500 tPLH ise Im O – m WT 1.5 tP 150 u O L n I-FLH 1.0-40 -20 0 20 40 60 80 100 10015 18 21 24 27 30 ity TA-AMBIENTTEMPERATURE(°C) VCC–SUPPLYVOLTAGE(V) , 1 . 0 A O Fig. 9 Propagation Delay vs. LED Forward Current Fig. 10 Propagation Delay vs. Ambient Temperature u t DELAY(ns) 450000 VRDfT=gCAUC=1T==0Y2235k0C°0HΩCYVz,C,CVLgEEE===15000Vn%F DELAY(ns) 450000 IVRDfF=gUC=CT1=1=Y0023kC0m0HΩYAVz,C,CLVgEEE===15000Vn%F put Curre t–PROPAGATIONP 230000 tPtHPLLH t–PROPAGATIONP 230000 ttPPLHHL nt, Gate D r i 1006 8 10 12 14 16 100-40 -20 0 20 40 60 80 100 ve IF–FORWARDLEDCURRENT(mA) TA–AMBIENTTEMPERATURE(°C) O p t o c o Fig. 11 Propagation Delay vs. Series Load Resistance Fig. 12 Propagation Delay vs. Load Capacitance u p 500 IF=10mA 500 IF=10mA le VCC=30V,VEE=0V VCC=30V,VEE=0V r Y(ns) 400 CTDAUg=T=Y2150C°nCYFCLE=50% Y(ns) 400 DRTAgU=T=Y225C0°ΩCYCLE=50% ELA f=10kHz ELA f=10kHz D D N N O O GATI 300 tPHL GATI 300 tPHL OPA tPLH OPA tPLH R R P 200 P 200 – – tP tP 100 100 0 10 20 30 40 50 0 20 40 60 80 100 R -SERIESLOADRESISTANCE(Ω) C -LOADCAPACITANCE(nF) g g ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 8

F O Typical Performance Curves (Continued) D 3 1 5 Fig. 13 Transfer Characteristics 0 35 T=25°C Fig. 14 Input Forward Current vs. Forward Voltage — A V =30V 100 CC 30 H i GE(V) 25 NT(mA) 10 TA=100°C gh N V–OUTPUTVOLTAO 112050 ORWARDCURRE 0.11 TAT=A2=5°-C40°C oise Imm F 5 I-F 0.01 un i t 0.001 y 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 , 0 1 2 3 4 5 1 IF–FORWARDLEDCURRENT(mA) VF-FORWARDVOLTAGE(V) .0 A O Fig. 15 Under Voltage Lockout u 14 tp u (12.75,12.80) t 12 C (11.25,11.30) u GE(V) 10 rre UTVOLTA 8 nt, G UTP 6 a O t – e VO 4 D r i 2 v e (11.20,0.00) (12.70,0.00) O 0 0 5 10 15 20 p (V -V )–SUPPLYVOLTAGE(V) t CC EE o c o u p l e r ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 9

F O Test Circuit D 3 1 5 0 Power Supply + — C0.11µF + C472µF VCC = 15V to 30V H i g h Pulse Generator N 1 8 PW = 4.99ms o Period = 5ms Pulse-In is ROUT = 50Ω 2 7 e I m R1020Ω Iol Power Supply m 3 6 + u LED-IFmon VOL D1 C0.31µF + C474µF V = 4V ni t 4 5 y , 1 R1 . 100Ω 0 To Scope A Test Conditions: O Frequency = 200Hz u Duty Cycle = 99.8% tp VCC = 15V to 30V u VEE = 0V t VF(OFF) = -3.0V to 0.8V C u r r Figure 20. IOL Test Circuit e n t , G a t e Power Supply D + C0.11µF + C472µF VCC = 15V to 30V riv e O Pulse Generator p PW = 10µs 1 8 to Period = 5ms c R = 50Ω Pulse-In o OUT 2 7 + Power Supply u C3 + C4 p R2 Ioh 0.1µF 47µF V = 4V le 100Ω r 3 6 – LED-IFmon VOH D1 Current 4 5 Probe To Scope R1 100Ω Test Conditions: Frequency = 200Hz Duty Cycle = 0.2% VCC = 15V to 30V VEE = 0V IF = 7mA to 16mA Figure 21. I Test Circuit OH ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 10

F O Test Circuit (Continued) D 3 1 5 0 — 1 8 H i g 2 7 0.1µF h + N IF = 7 to 16mA – VCC = 15 to 30V o i 3 6 VO se 100mA I m 4 5 m u n i t y Figure 22. VOH Test Circuit , 1 . 0 A O u 1 8 tp u t 100mA C 2 7 u 0.1µF +– VCC = 15 to 30V rr e n 3 6 VO t , G a 4 5 t e D r i v e Figure 23. V Test Circuit O OL p t o c o u p l e r ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 11

F O Test Circuit (Continued) D 3 1 5 0 1 8 — H i 2 7 0.1µF g h + IF = 7 to 16mA – VCC = 30V N o 3 6 VO is e I m 4 5 m u n i t y Figure 24. ICCH Test Circuit , 1 . 0 A O 1 8 u t p u t 2 7 0.1µF C +– VF = 0 to 0.8V +– VCC = 30V ur r 3 6 VO en t , G 4 5 a t e D r i v Figure 25. ICCL Test Circuit e O p t o c o u p l e r ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 12

F O Test Circuit (Continued) D 3 1 5 0 — 1 8 H i g 2 7 0.1µF h +– VCC = 15 to 30V N o IF 3 6 VO > 5V is e I m 4 5 m u n i t y Figure 26. IFLH Test Circuit , 1 . 0 A O 1 8 u t p u t 2 7 0.1µF C +– VF = 0 to 0.8V +– VCC = 15 to 30V ur r 3 6 VO en t , G 4 5 a t e D r i Figure 27. V Test Circuit v FHL e O p t o 1 8 c o u p 2 7 0.1µF le IF = 10mA +– 15V or 30V r VCC Ramp 3 6 VO = 5V 4 5 Figure 28. UVLO Test Circuit ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 13

F O Test Circuit (Continued) D 3 1 5 0 1 8 — 0.1µF H 2 7 VO ig + +– VCC = 15 to 30V h – N F = 10kHz Probe 3 6 Rg = 20Ω o DC = 50% i Cg = 10nF s 50Ω e 4 5 I m m u n i t y IF , 1 . 0 A tr tf O u 90% t p 50% u t C VOUT 10% u r r tPLH tPHL e n t , Figure 29. t , t , t and t Test Circuit and Waveforms G PHL PLH R F a t e D r IF 1 8 iv e A O 2 7 0.1µF p B +– VCC = 30V to 5V +– 3 6 VO co u p 4 5 le r + – VCM = 2,000V VCM 0V ∆t VO VOH Switch at A: IF = 10mA VO VOL Switch at B: IF = 0mA Figure 30. CMR Test Circuit and Waveforms ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 14

F O Ordering Information D 3 1 Part Number Package Packing Method 5 0 FOD3150 DIP 8-Pin Tube (50 units per tube) — FOD3150S SMT 8-Pin (Lead Bend) Tube (50 units per tube) H FOD3150SD SMT 8-Pin (Lead Bend) Tape and Reel (1,000 units per reel) ig h FOD3150V DIP 8-Pin, IEC60747-5-2 option Tube (50 units per tube) N FOD3150SV SMT 8-Pin (Lead Bend), IEC60747-5-2 option Tube (50 units per tube) o i s FOD3150SDV SMT 8-Pin (Lead Bend), IEC60747-5-2 option Tape and Reel (1,000 units per reel) e I FOD3150T DIP 8-Pin, 0.4” Lead Spacing Tube (50 units per tube) m m FOD3150TV DIP 8-Pin, 0.4” Lead Spacing , IEC60747-5-2 option Tube (50 units per tube) u n i t y , 1 Marking Information .0 A O u t p u t 1 C u r r 3150 2 e n t , V XX YY B 6 G a t e D r 3 4 5 iv e O p t o Definitions c o u 1 Fairchild logo p l 2 Device number e r 3 IEC60747-5-2 Option (only appears on component ordered with this option) 4 Two digit year code, e.g., ‘08’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 15

F O Carrier Tape Specifications D 3 1 D 5 0 0 P0 P2 — t E K 0 H i g h N F o W1 B0 A0 W ise I m m u n P it d UserDirectionofFeed D1 y, 1 . 0 A Symbol Description Dimension in mm O u W Tape Width 16.0 ± 0.3 t p t Tape Thickness 0.30 ± 0.05 u t P Sprocket Hole Pitch 4.0 ± 0.1 C 0 u D Sprocket Hole Diameter 1.55 ± 0.05 r 0 r e E Sprocket Hole Location 1.75 ± 0.10 n t F Pocket Location 7.5 ± 0.1 , G a P 2.0 ± 0.1 2 t e P Pocket Pitch 12.0 ± 0.1 D r A0 Pocket Dimensions 10.30 ±0.20 iv e B0 10.30 ±0.20 O K 4.90 ±0.20 p 0 t o W Cover Tape Width 13.2 ± 0.2 1 c o d Cover Tape Thickness 0.1 max u p Max. Component Rotation or Tilt 10° l e R Min. Bending Radius 30 r ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 16

F O Reflow Profile D 3 1 245 C, 10–30 s 5 300 0 — 250 260 C peak C) H e (° 200 igh ur 150 N perat 100 Time above 183 C, <160 sec ois m e Te 50 Ramp up = 2–1 0C/sec Im m 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 u n Time (Minute) it y • Peak reflow temperature: 2 60C (package surface temperature) , 1 • Time of temperature higher than 1 83C for 160 seconds or less .0 • One time soldering reflow is recommended A O u t p u t C u r r e n t , G a t e D r i v e O p t o c o u p l e r ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD3150 Rev. 1.0.4 17

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