Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F O D 0 October 2011 6 0 L FOD060L, FOD260L , F O 3.3V/5V High Speed-10 MBit/s D 2 Logic Gate Optocouplers 6 0 L — Features ■ Line receiver, data transmission 3 ■ Data multiplexing . ■ FOD060L in SO8 and FOD260L in 8-pin DIP 3 ■ Switching power supplies V ■ Very high speed – 10 MBit/s / ■ Pulse transformer replacement 5 ■ Superior CMR — 50 kV/µs at 1,000V peak V ■ Fan-out of 8 over -40°C to +85°C ■ Computer-peripheral interface H i g ■ Logic gate output Description h ■ Strobable output S These optocouplers consist of an AlGaAS LED, optically p ■ Wired OR-open collector coupled to a very high speed integrated photo-detector e ■ Safety and regulatory approvals logic gate. Devices include a strobable output. This ed –UL1577 output features an open collector, thereby permitting -1 0 –DIN EN/IEC 60747-5-2 wired OR outputs. The coupled parameters are M guaranteed over the temperature range of -40°C to B Applications +85°C. A maximum input signal of 5 mA will provide a i t ■ Ground loop elimination minimum output sink current of 13 mA (fan out of 8). An /s internal noise shield provides superior common mode L ■ LSTTL to TTL, LSTTL or 5-volt CMOS rejection of typically 50 kV/µs at 1,000V common mode. o g i c Package G a t e O p N/C 1 8 VCC t o 8 8 co 8 u 1 1 + 2 7 VE p l e 1 VF rs _ 3 6 V O 8 8 N/C4 5 GND 1 1 Truth Table (Positive Logic) Input Enable Output On H L Off H H On L H Off L H On* NC* L* Off* NC* H* *Devices with pin 7 not connected. A 0.1 µF bypass capacitor must be connected between pins 5 and 8. (See Note 1) ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5

F O Absolute Maximum Ratings (No derating required up to 85°C) D 0 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 6 0 operable above the recommended operating conditions and stressing the parts to these levels is not recommended. L In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. , F The absolute maximum ratings are stress ratings only. O D Symbol Parameter Value Units 2 6 TSTG Storage Temperature -40 to +125 °C 0 L T Operating Temperature -40 to +85 °C OPR — EMITTER 3 . I DC/Average Forward Input Current 50 mA 3 F V VE Enable Input Voltage, not to exceed VCC by more than 500 mV VCC + 0.5V V /5 V VR Reverse Input Voltage 5.0 V H PI Power Dissipation 45 mW ig h DETECTOR S V Supply Voltage 7.0 V p CC e (1 minute max) e d I Output Current 50 mA - O 1 0 VO Output Voltage 7.0 V M P Collector Output Power Dissipation 85 mW B O i t / s L Recommended Operating Conditions o g i c Symbol Parameter Min. Max. Units G I Input Current, Low Level 0 250 µA a FL t e IFH Input Current, High Level *6.3 15 mA O V Supply Voltage, Output 3.0 5.5 V p CC t o VEL Enable Voltage, Low Level 0 0.8 V c o VEH Enable Voltage, High Level 2.0 VCC V u p TA Operating Temperature -40 +85 °C le r N Fan Out (TTL load) 8 s R Output Pull-up Resistor 330 4K Ω L *6.3 mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0 mA or less. ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 2

F O Electrical Characteristics (T = -40°C to +85°C unless otherwise specified. Typical value is measured at D A 0 TA = 25°C and VCC = 3.3V) 6 0 L Individual Component Characteristics , F Symbol Parameter Test Conditions Min. Typ. Max. Unit O D EMITTER 2 6 VF Input Forward Voltage IF = 10 mA 1.4 1.8 V 0 L TA = 25°C 1.75 — BVR Input Reverse Breakdown Voltage IR = 10 µA 5.0 V 3 CIN Input Capacitance VF = 0, f = 1 MHz 6.0 pF .3 V ∆VF/∆TA Input Diode Temperature Coefficient IF = 10 mA -1.9 mV/°C /5 V DETECTOR H ICCH High Level Supply Current VE = 0.5 V, IF = 0 mA, VCC = 3.3 V 3.5 7 mA ig I Low Level Supply Current V = 0.5 V, I = 0 mA, V = 3.3 V 3.2 10 mA h CCL E F CC S IEL Low Level Enable Current VCC = 3.3 V, VE = 0.5 V -1.6 mA p e IEH High Level Enable Current VCC = 3.3 V, VE = 2.0 V -1.6 mA e d VEH High Level Enable Voltage VCC = 3.3 V, IF = 10 mA 2.0 1.27 V -1 V Low Level Enable Voltage V = 3.3 V, I = 10 mA (Note 2) 1.18 0.8 V 0 EL CC F M B i t / Switching Characteristics (T = -40°C to +85°C, V = 3.3 V, I = 7.5 mA unless otherwise specified. s A CC F L Typical value is measured at TA = 25°C and VCC = 3.3V) o g Symbol AC Characteristics Test Conditions Min. Typ. Max. Unit ic G T Propagation Delay Time R = 350Ω, C = 15 pF (Fig. 9) (Note 3) 65 90 ns PLH L L a to Output High Level t e T Propagation Delay Time R = 350Ω, C = 15 pF (Fig. 9) (Note 4) 43 75 ns O PHL L L to Output Low Level p t |TPHL – TPLH| Pulse Width Distortion RL = 350Ω, CL = 15 pF (Fig. 9) 23 25 ns oc o tPSK Propagation Delay Skew RL = 350Ω, CL = 15 pF (Note 5) 31 40 ns u p tr Output Rise Time RL = 350Ω, CL = 15 pF (Fig. 9)(Note 6) 22 ns le (10-90%) r s t Output Fall Time R = 350Ω, C = 15 pF (Fig. 12) (Note 7) 3 ns f L L (90-10%) t Enable Propagation V = 3 V, R = 350Ω, C = 15 pF 47 ns ELH EH L L Delay Time to Output (Fig. 10) (Note 8) High Level t Enable Propagation V = 3 V, R = 350Ω, C = 15 pF 27 ns EHL EH L L Delay Time to Output (Fig. 10) (Note 9) Low Level CM Common Mode R = 350Ω, T =25°C, I = 0 mA, 25,000 50,000 V/µs H L A F Transient Immunity V (Min.) = 2.0V, |V | = 1,000 V OH CM (at Output High Level) (Fig. 11) (Note 10) CM Common Mode R = 350Ω, T =25°C, I = 7.5 mA, 25,000 50,000 V/µs L L A F Transient Immunity V (Max.) = 0.8 V, |V | = 1,000 V OL CM (at Output Low Level) (Fig. 11) (Note 11) ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 3

F O Transfer Characteristics (T = -40°C to +85°C Unless otherwise specified. Typical value is measured at D A 0 TA = 25°C and VCC = 3.3V) 6 0 L Symbol DC Characteristics Test Conditions Min. Typ. Max. Unit , F IOH High Level Output Current IF = 250 µA, VCC = 3.3 V, VO = 3.3 V, 0.01 50 µA O V = 2.0 V (Note 2) D E 2 V Low Level Output Voltage V = 3.3 V, I = 5 mA, I = 13 mA, 0.3 0.6 V 6 OL CC F OL 0 VE = 2.0 V (Note 2) L I Input Threshold Current V = 3.3 V, V = 0.6 V, I = 13 mA, 1 5 mA — FT CC O OL VE = 2.0 V (Note 2) 3 . 3 V / 5 Isolation Characteristics (T = -40°C to +85°C Unless otherwise specified. Typical value is measured at V A T = 25°C and V = 3.3V) H A CC i g Symbol Characteristics Test Conditions Min. Typ. Max. Unit h S II-O Input-Output Relative humidity = 45%, 1.0 µA p Insulation Leakage Current T = 25°C, t = 5 s, e A e V = 3000 VDC (Note 12) d I-O - VISO Withstand Insulation Test IIO ≤ 2 µA, RH < 50%, VRMS 10 Voltage TA = 25°C, t = 1 min.(Note 12) M B FOD060L 3750 i t FOD260L 5000 /s L RI-O Resistance (Input to Output) VI-O = 500 V (Note 12) 1012 Ω o g CI-O Capacitance (Input to Output) f = 1 MHz (Note 12) 0.6 pF ic G a Notes t e 1. The V supply to each optoisolator must be bypassed by a 0.1µF capacitor or larger. This can be either a ceramic O CC or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible p t to the package V and GND pins of each device. o CC c 2. Enable Input – No pull up resistor required as the device has an internal pull up resistor. o u 3. tPLH – Propagation delay is measured from the 3.75 mA level on the HIGH to LOW transition of the input current p pulse to the 1.5V level on the LOW to HIGH transition of the output voltage pulse. le r 4. t – Propagation delay is measured from the 3.75 mA level on the LOW to HIGH transition of the input current s PHL pulse to the 1.5V level on the HIGH to LOW transition of the output voltage pulse. 5. t is the worst case difference between t and t for any devices at the stated test conditions. PSK PHL PLH 6. t – Rise time is measured from the 90% to the 10% levels on the LOW to HIGH transition of the output pulse. r 7. t – Fall time is measured from the 10% to the 90% levels on the HIGH to LOW transition of the output pulse. f 8. t – Enable input propagation delay is measured from the 1.5V level on the HIGH to LOW transition of the input ELH voltage pulse to the 1.5V level on the LOW to HIGH transition of the output voltage pulse. 9. t – Enable input propagation delay is measured from the 1.5V level on the LOW to HIGH transition of the input EHL voltage pulse to the 1.5V level on the HIGH to LOW transition of the output voltage pulse. 10.CM – The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the high H state (i.e., V > 2.0 V). Measured in volts per microsecond (V/µs). OUT 11.CM – The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low L output state (i.e., V < 0.8 V). Measured in volts per microsecond (V/µs). OUT 12.Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and 8 shorted together. ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 4

F O Typical Performance Curves D 0 6 Fig. 1 Input Forward Current vs. Fig. 2 Input Threshold Current vs. 0 L Forward Voltage Ambient Temperature , F 100 2.5 O VCC = 3.3V D VO = 0.6V 2 A) 10 mA) 2.0 60 ward Current (m 0.11 TA = 85°CTA = 100°C TA = -40°C eshold Current ( 11..05 FROL D= 036500LΩ, 1kΩ, 4kΩ L — 3.3V For TA = 0°C Thr /5 I - F0.01 TA = 25°C - Input H 0.5 FROL D= 236500LΩ, 1kΩ, 4kΩ V Hi IT gh 0.001 0.0 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -40 -20 0 20 40 60 80 100 S p VF - Forward Voltage (V) TA - Ambient Temperature (°C) e e d - 1 Fig. 3 Low Level Output Voltage vs. Fig. 4 High Level Output Current 0 Ambient Temperature vs. Ambient Temperature M B 0.6 20 i t V = 3.3V /s Voltage (V) 00..45 VIIFOCE == C= 51 2m3VmA A Current (nA) 16 Logic ut ut 12 G p p Out 0.3 Out a el el te Low Lev 0.2 High Lev 8 Opt - - 4 o VOL 0.1 IOH VVOE == 2VVCC = 3.3V co 0.0 0 IF = 250 µA up -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 l e TA - Ambient Temperature (°C) TA - Ambient Temperature (°C) rs Fig. 5 Low Level Output Current vs. Fig. 6 Propagation Delay vs. Ambient Temperature Ambient Temperature 40 80 V = 3.3V CC V = 3.3V put Current (mA) 233505 VVIFEO = L= 5= 2m V0A. 6V n Delay (ns) 6700 IRFCL = C= 7 3.55m0ΩA tPLH t-P FLOH D- 2F6O0DL060L Out 20 atio 50 - Low Level OL 11505 - PropagtP 3400 tPHL - FODtP2H6L0 -L FOD060L I 0 20 -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 TA - Ambient Temperature (°C) TA - Ambient Temperature (°C) ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 5

F O Typical Performance Curves D 0 6 0 Fig. 7 Rise and Fall Times vs. Fig. 8 Pulse Width Distortion vs. L , Ambient Temperature Ambient Temperature F O 35 30 D VCC = 3.3V VCC = 3.3V 26 t, t, - Rise, Fall Time (ns)rf11223505050 IRFL = = 7 3.55m0AΩ tr PWD - Pulse Width Distortion (ns) 112250505 RIFL = = 7 3.55m0AΩ FFOODD026600LL 0L — 3.3V/5V High tf S 0 0 p -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 e TA - Ambient Temperature (°C) TA - Ambient Temperature (°C) ed - 1 0 M B i t / s L o g i c G a t e O p t o c o u p l e r s ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 6

F O D 0 6 0 tPfZ u=Ol st =re = 5G 05e Ωnns. +3.3V Input II FF == 37..755 m mAA L, F (I ) O 1 VCC 8 F t t D PHL PLH 2 0.1µF Output 6 2 7 Bypass RL (VO ) 1.5 V 0L MoInniptourt 3 6 Output — (IF) CL(VO) Output 90% 3 47Ω 4 GND 5 (VO ) 10% .3V / t t 5 f r V H i g h Fig. 9 Test Circuit and Waveforms for t , t t and t. PLH PHL, r f S p e e d - 1 0 PGuelnseerator Input M tr = 5ns Monitor B Z O = 50Ω (V E ) it / s +3.3V L o g 3.0 V i c Input V CC (V ) 1.5 V G 1 8 E a t t t e 7.5 mA EHL ELH Output O 2 7 R 0.1µF L (VO ) p bypass 1.5 V to Output c 3 6 (V ) o O u CL p l e 4 5 r GND s Fig. 10 Test Circuit t and t . EHL ELH ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 7

F O D 0 6 0 V L CC 1 8 +3.3V , F O D I A F 2 7 0.1µf 350Ω 26 bypass 0 B L Output — VFF 3 6 (V ) O 3 . 3 V 4 5 / 5 GND V H V i CM g h Pulse Gen S p e e d - 1 0 M B i t / s VCM L 0V o g i c Peak G a t e O p 3.3V CMH t Switching Pos. (A), I = 0 o F VO co VO (Min) u p l e r s VO (Max) Switching Pos. (B), I = 7.5 mA F VO 0.5 V CML Fig. 11 Test Circuit Common Mode Transient Immunity ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 8

F O Ordering Information D 0 6 Part Number Package Packing Method 0 L FOD060L Small outline 8-pin Tube (50 units per tube) , F FOD060LR2 Small outline 8-pin Tape and Reel (2.500 units per reel) O D FOD260L DIP 8-Pin Tube (50 units per tube) 2 6 FOD260LS SMT 8-Pin (Lead Bend) Tube (50 units per tube) 0 L FOD260LSD SMT 8-Pin (Lead Bend) Tape and Reel (1,000 units per reel) — FOD260LV DIP 8-Pin, DIN EN/IEC 60747-5-2 option Tube (50 units per tube) 3 FOD260LSV SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option Tube (50 units per tube) .3 V FOD260LSDV SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option Tape and Reel (1,000 units per reel) / 5 V FOD260LTV DIP 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option Tube (50 units per tube) H FOD260LTSV SMT 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option Tube (50 units per tube) i g FOD260LTSR2 SMT 8-Pin, 0.4” Lead Spacing Tape and Reel (700 units per reel) h S FOD260LTSR2V SMT 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option Tape and Reel (700 units per reel) p e e d - Marking Information 1 0 M Small Outline B i t 1 /s L o g i 060L 2 c G a t X YY S1 5 e O p t o c o u p 3 4 l e r s Definitions 1 Fairchild logo 2 Device number 3 One digit year code, e.g., ‘8’ 4 Two digit work week ranging from ‘01’ to ‘53’ 5 Assembly package code ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 9

F O Marking Information (Continued) D 0 6 DIP and SMT 0 L , F O D 2 6 1 0 L — 260L 2 3 . 3 V V XX YY B 6 / 5 V H i g 3 4 5 h S p e e d Definitions - 1 0 1 Fairchild logo M 2 Device number B i t 3 VDE mark (Note: Only appears on parts ordered with /s DIN EN/IEC 60747-5-2 option – See order entry table) L o 4 Two digit year code, e.g., ‘11’ g i c 5 Two digit work week ranging from ‘01’ to ‘53’ G 6 Assembly package code a t e O p t o c o u p l e r s ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 10

F O Carrier Tape Specification D 0 6 Small Outline 0 L 8.0 ± 0.10 , F 3.50 ± 0.20 O D 2.0 ± 0.05 Ø1.5 MIN 2 6 0.30 MAX 4.0 ± 0.10 1.75 ± 0.10 0L — 3 5.5 ± 0.05 .3 V 8.3 ± 0.10 12.0 ± 0.3 /5 5.20 ± 0.20 V H i g h 0.1 MAX 6.40 ± 0.20 Ø1.5 ± 0.1/-0 S p e User Direction of Feed e d - 1 Note: 0 All dimensions are in millimeters. M B i t / s L o g i c G a t e O p t o c o u p l e r s ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 11

F O Carrier Tape Specification (Continued) D 0 6 Option S 0 L D0 , F O P P t 0 2 E D K0 2 6 0 L — F A 3 W1 B0 0 W .3V / 5 V H i g P h d UserDirectionofFeed D1 S p e e d Symbol Description Dimension in mm - 1 W Tape Width 16.0 ± 0.3 0 M t Tape Thickness 0.30 ± 0.05 B P Sprocket Hole Pitch 4.0 ± 0.1 it 0 / s D0 Sprocket Hole Diameter 1.55 ± 0.05 L o E Sprocket Hole Location 1.75 ± 0.10 g i F Pocket Location 7.5 ± 0.1 c G P2 2.0 ± 0.1 a t P Pocket Pitch 12.0 ± 0.1 e O A0 Pocket Dimensions 10.30 ±0.20 p t B 10.30 ±0.20 o 0 c K 4.90 ±0.20 o 0 u W Cover Tape Width 13.2 ± 0.2 p 1 l e d Cover Tape Thickness 0.1 max r s Max. Component Rotation or Tilt 10° R Min. Bending Radius 30 ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 12

F O Carrier Tape Specification (Continued) D 0 6 Option TS 0 L D0 , F O P P t 0 2 E D K0 2 6 0 L — F A 3 W1 B0 0 W .3V / 5 V H i g P h d UserDirectionofFeed D1 S p e e d Symbol Description Dimension in mm - 1 0 W Tape Width 24.0 ± 0.3 M t Tape Thickness 0.40 ± 0.1 B i P0 Sprocket Hole Pitch 4.0 ± 0.1 t/s D0 Sprocket Hole Diameter 1.55 ± 0.05 L o E Sprocket Hole Location 1.75 ± 0.10 g i c F Pocket Location 11.5 ± 0.1 G P 2.0 ± 0.1 a 2 t e P Pocket Pitch 16.0 ± 0.1 O A Pocket Dimensions 12.80 ± 0.1 p 0 t o B 10.35 ± 0.1 0 c o K 5.7 ±0.1 0 u p W1 Cover Tape Width 21.0 ± 0.1 le d Cover Tape Thickness 0.1 max rs Max. Component Rotation or Tilt 10° R Min. Bending Radius 30 ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 13

F O Reflow Profile D 0 6 Small Outline 0 L , F 300 O 260°C 280 D 260 2 >245°C = 42 Sec 6 240 0 L 220 — 200 3 180 . Temperature Time above 3 (°C) 116400 183°C = 90 Sec V/5 V 120 100 1.822°C/Sec Ramp up rate H i g 80 h 60 S 40 p 33 Sec e 20 e d 0 - 0 60 120 180 270 360 1 0 Time (s) M B i t / s L o g i c G a t e O p t o c o u p l e r s ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 14

F O Reflow Profile (Continued) D 0 6 DIP and SMT 0 L Max. Ramp-up Rate = 3°C/S , 260 TP Max. Ramp-down Rate = 6°C/S FO 240 tP D 2 TL 6 220 0 200 Tsmax L tL — C) 180 Preheat Area ° ( 160 Tsmin 3.3 e r 140 V u ts / t 120 5 a V er 100 H p m 80 ig e h T 60 S 40 p e 20 e d 0 - 1 120 240 360 0 M Time 25°C to Peak B Time (seconds) i t / s L o g Profile Freature Pb-Free Assembly Profile ic G Temperature Min. (Tsmin) 150°C a t Temperature Max. (Tsmax) 200°C e O Time (t ) from (Tsmin to Tsmax) 60–120 seconds S p t Ramp-up Rate (t to t ) 3°C/second max. o L P c Liquidous Temperature (T ) 217°C o L u Time (t ) Maintained Above (T ) 60–150 seconds p L L l e Peak Body Package Temperature 260°C +0°C / –5°C r s Time (t ) within 5°C of 260°C 30 seconds P Ramp-down Rate (T to T ) 6°C/second max. P L Time 25°C to Peak Temperature 8 minutes max. ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD060L, FOD260L Rev. 1.0.5 15

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: FOD260LSDV FOD260L FOD260LS FOD260LSD FOD260LSV