SOT23 NPN SILICON PLANAR HIGH GAIN FMMTL618 MEDIUM POWER TRANSISTOR ISSUE 1 – NOVEMBER 1997 FEATURES Very low equivalent on-resistance; R =140mW at 1.25A CE(sat) E COMPLEMENTARY TYPE – FMMTL718 C PARTMARKING DETAIL – L68 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 5 V EBO Continuous Collector Current I 1.25 A C Peak Pulse Current I 4 A CM Base Current I 200 mA B Power Dissipation at T =25°C P 500 mW amb tot Operating and Storage Temperature Range T:T -55 to +150 °C j stg

FMMTL618 ELECTRICAL CHARACTERISTICS (at T = 25°C). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 60 105 V I =100m A (BR)CBO C Breakdown Voltage Collector-Emitter V 20 30 V I =10mA* (BR)CEO C Breakdown Voltage Emitter-Base V 5 8.5 V I=100m A (BR)EBO E Breakdown Voltage Collector Cut-Off Current I 10 nA V =16V CBO CB Emitter Cut-Off Current I 10 nA V =4V EBO EB Collector Cut-Off Current I 10 nA V =16V CES CE Collector-Emitter V 18 35 mV I =100mA, I =10mA* CE(sat) C B Saturation Voltage 80 160 mV I =500mA, I =25mA* C B 130 200 mV I =1A, I =100mA* C B 170 280 mV I =1.25A, IB=100mA* C 260 350 mV I =2A, I =200mA* C B Base-Emitter V 1000 1100 mV I =1.25A, I =100mA* BE(sat) C B Saturation Voltage Base-Emitter V 850 1000 mV I =1.25A, V =2V* BE(on) C CE Turn On Voltage Static Forward h 200 400 I =10mA, V =2V FE C CE Current Transfer Ratio 300 440 I =200mA, V =2V* C CE 250 400 I =500mA, V =2V* C CE 200 300 I =1A, V =2V* C CE 100 190 I =2A, V =2V* C CE 50 100 I =3A, V =2V* C CE Transition Frequency f 195 MHz I =50mA, V =10V T C CE f=100MHz Collector-Base C 9 12 pF V =10V, f=1MHz obo CB Breakdown Voltage Switching times t 72 ns I =1A, V =10V on C CC t 388 ns I =-I =10mA off B1 B2 *Measured under pulsed conditions. Pulse width=300m s. Duty cycle £ 2%

FMMTL618 TYPICAL CHARACTERISTICS +25°C IC/IB=10 300m 300m V) V) -55°C - (CE(sat) 200m ICIICC/I//BIIBB===125000 - (CE(sat) 200m +1+0250°°CC V 100m V 100m 0 0 1mA 10mA 100mA 1A 10A 1m 10m 100m 1A 10A IC- Collector Current (A) IC- Collector Current (A) VCE(sat)v IC VCE(sat)v IC 600 VCE=2V 1.0 IC/IB=10 ain 0.8 G V) - Typical 300 V- (BE(sat) 00..46 -55°C FE +100°C +25°C h +25°C 0.2 +100°C -55°C 0 0 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC- Collector Current (A) IC- Collector Current (A) hFEv IC VBE(sat)v IC 1.0 10A VCE=2V A) 0.8 nt ( - (V) 0.6 Curre 1A DC VBE(on) 00..24 -+5255°C°C Collector 100m 110101000mmmu1sssss +100°C - C I 0 10m 1mA 10mA 100mA 1A 10A 100m 1 10 100 IC - Collector Current (A) VCE- Collector Emitter Voltage (V) VBE(on)v IC Safe Operating Area

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: D iodes Incorporated: FMMTL618TA