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FMMT734TA产品简介:
ICGOO电子元器件商城为您提供FMMT734TA由Diodes Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 FMMT734TA价格参考。Diodes Inc.FMMT734TA封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP - 达林顿 100V 800mA 140MHz 625mW 表面贴装 SOT-23-3。您可以下载FMMT734TA参考资料、Datasheet数据手册功能说明书,资料中有FMMT734TA 详细功能的应用电路图电压和使用方法及教程。
FMMT734TA是由Diodes Incorporated生产的单晶体管 - 双极 (BJT) - 单。它具有小外形尺寸和低功耗的特点,适用于多种消费电子、通信设备及工业应用。 主要应用场景: 1. 便携式电子产品: FMMT734TA因其低功耗和小封装(SOT-323),非常适合用于便携式设备,如手机、平板电脑、可穿戴设备等。这些设备对空间和功耗要求极高,而该晶体管能够满足这些需求,提供稳定的开关和放大功能。 2. 音频电路: 在音频放大器中,FMMT734TA可以作为前置放大器或驱动级的一部分。其高增益和低噪声特性使其适合用于耳机放大器、扬声器驱动等场景,确保音频信号的清晰传输。 3. 电源管理: 该晶体管可用于电源管理电路中的开关元件。例如,在DC-DC转换器、线性稳压器等电路中,FMMT734TA可以实现高效的电压调节和电流控制,帮助优化系统的能效。 4. 通信设备: 在无线通信模块中,FMMT734TA可以用于射频前端电路,如功率放大器、混频器等。它的高频性能和稳定性使其能够在GHz频率范围内工作,支持Wi-Fi、蓝牙等无线通信协议。 5. 工业自动化: 在工业控制系统中,FMMT734TA可以用于传感器接口、信号调理电路等。它能够处理微弱的模拟信号,并将其放大或转换为数字信号,以便进一步处理。此外,它还可以用于电机驱动电路中的保护和控制部分。 6. 医疗设备: 对于一些小型化、低功耗的医疗设备,如心率监测仪、血糖仪等,FMMT734TA可以用于信号采集和处理电路,确保设备的可靠性和精度。 总之,FMMT734TA凭借其优异的电气特性和紧凑的封装形式,广泛应用于各种需要高效、低功耗和高稳定性的电路设计中。
参数 | 数值 |
产品目录 | |
描述 | TRANS DARL PNP 100V 0.8A SOT23-3达林顿晶体管 PNP Darlington |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | Diodes Incorporated |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,达林顿晶体管,Diodes Incorporated FMMT734TA- |
数据手册 | |
产品型号 | FMMT734TA |
PCN其它 | |
RoHS指令信息 | http://diodes.com/download/4349 |
不同 Ib、Ic时的 Vce饱和值(最大值) | 1.05V @ 5mA,1A |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 20000 @ 100mA,5V |
产品目录页面 | |
产品种类 | |
供应商器件封装 | SOT-23-3 |
其它名称 | FMMT734DKR |
其它图纸 | |
功率-最大值 | 625mW |
功率耗散 | 625 mW |
包装 | Digi-Reel® |
发射极-基极电压VEBO | 12 V |
商标 | Diodes Incorporated |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
封装/箱体 | SOT-23 |
工厂包装数量 | 3000 |
晶体管极性 | PNP |
晶体管类型 | PNP - 达林顿 |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.8 A |
最大集电极截止电流 | 0.01 uA |
最小工作温度 | - 55 C |
标准包装 | 1 |
电压-集射极击穿(最大值) | 100V |
电流-集电极(Ic)(最大值) | 800mA |
电流-集电极截止(最大值) | 200nA |
直流集电极/BaseGainhfeMin | 20000 at 100 mA at 5 V, 15000 at 1 A at 5 V, 5000 at 2 A at 5 V |
系列 | FMMT734 |
配置 | Single |
集电极—发射极最大电压VCEO | 100 V |
集电极—基极电压VCBO | 100 V |
集电极连续电流 | - 0.8 A |
频率-跃迁 | 140MHz |
FMMT734 100V PNP DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -100V Case: SOT23 IC = -800mA High Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound Darlington Transistor hFE > 20k @ 100mA for High Gain UL Flammability Classification Rating 94V-0 High Gain Hold-Up to 5A Moisture Sensitivity: Level 1 per J-STD-020 625mW Power Dissipation Terminals: Finish – Matte Tin Plated Leads, Solderable per Complementary Darlington NPN Type: FMMT634 MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight 0.008 grams (Approximate) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT23 Top View Top View Pin-Out Device Symbol Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel FMMT734TA AEC-Q101 734 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 7ZF3E4 734 = Product Type Marking Code FMMT734 1 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
FMMT734 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -12 V Continuous Collector Current IC -800 mA Peak Pulse Current ICM -5 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 625 mW Power Dissipation (Note 6) PD 806 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 200 C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 155 C/W Thermal Resistance, Junction to Leads (Note 7) RθJL 194 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 2,000 V 1C Electrostatic Discharge - Machine Model ESD MM 200 V A Notes: 5. For a device surface mounted on 25mm X 25mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as note 5, except the device is measured at t ≤ 5 sec. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FMMT734 2 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
FMMT734 Thermal Characteristics and Derating Information W) 220 W) 0.7 C/ 128000 Tamb=25oC n ( 0.6 o o e ( 160 ati 0.5 anc 112400 ssip 0.4 esist 10800 D=0.5 er Di 0.3 mal R 4600 D=0.2 D=0.D0=50.1 Pow 0.2 0.1 er 20 ax h Single Pulse M T 1100000µμ 1m 10m 100m 1 10 100 1k 0.00 25 50 75 100 125 150 175 Pulse Width (s) Temperature (oC) Transient Thermal Impedance Derating Curve 100 Single Pulse ) W T =25oC amb ( r 10 e w o P m u 1 m axi M 0.1 110000µμ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation FMMT734 3 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
FMMT734 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO -100 -130 - V IC = -100µA Collector-Emitter Breakdown Voltage (Note 9) BVCEO -100 -116 - V IC = -5mA Emitter-Base Breakdown Voltage BVEBO -12 -17 - V IE = -100µA Collector Cutoff Current ICBO - - -10 nA VCB = -80V Collector Cutoff Current ICES - - -200 nA VCES = -80V Emitter Cutoff Current IEBO - - -10 nA VEB = -7V ON CHARACTERISTICS (Note 9) - 60,000 - IC = -10mA, VCE = -5V 20,000 60,000 - IC = -100mA, VCE = -5V Static Forward Current Transfer Ratio hFE 155,0,00000 5105,,000000 -- - IICC == --12AA,, VVCCEE == --55VV - 150 - IC = -5A, VCE = -5V - 20,000 - IC = -1A, VCE = -2V -0.68 -0.75 IC = - 100mA, IB = -1mA -0.72 -0.80 IC = - 250mA, IB = -1mA Collector-Emitter Saturation Voltage VCE(sat) - --00..7886 --00..8967 V IICC == -- 580000mmAA,, IIBB == --55mmAA -0.72 - IC = - 800mA, IB = -5mA, TJ= +150°C -0.90 -1.05 IC = - 1A, IB = -5mA Base-Emitter Saturation Voltage VBE(sat) - -1.6 -1.75 V IC = -1A, IB = -5mA Base-Emitter Turn-On Voltage VBE(on) - -1.3 -1.75 V IC= -1A, VCE=-5V SMALL SIGNAL CHARACTERISTICS Transition Frequency fT - 140 - MHz Vf =C E1 =0 0-M10HVz, IC = -10mA, Output Capacitance Cobo - 14 25 pF VCB = -10V, f = 1MHz Turn-On Time t(on) - 460 - ns IC=-500mA, VCC=-20V Turn-Off Time t(off) - 1200 - ns IB=±1mA Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FMMT734 4 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
FMMT734 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) FMMT734 5 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
FMMT734 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. SOT23 All 7° H SOT23 GAUGE PLANE Dim Min Max Typ 0.25 A 0.37 0.51 0.40 J K1 K B 1.20 1.40 1.30 C 2.30 2.50 2.40 a D 0.89 1.03 0.915 A M F 0.45 0.60 0.535 G 1.78 2.05 1.83 L L1 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 C B L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° D All Dimensions in mm F G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT23 Y Dimensions Value (in mm) Z Z 2.9 C X 0.8 Y 0.9 C 2.0 E 1.35 X E Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking. FMMT734 6 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
FMMT734 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com FMMT734 7 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
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