Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F J T 4 October 2014 4 — N P N E FJT44 p i t a NPN Epitaxial Silicon Transistor x i a l S i l i c o Features n • High-Voltage Transistor 4 T r a n s i 3 s 2 to 1 SOT-223 r 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number Marking Package Packing Method, Size FJT44TF FJT44 SOT-223 4L Tape and Reel, 4000 pcs FJT44KTF FJT44 SOT-223 4L Tape and Reel, 2500 pcs Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 300 mA C T Junction Temperature 150 °C J T Storage Temperature Range -55 to +150 °C STG Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FJT44 Rev. 1.1.0

F J Thermal Characteristics(3) T 4 4 Values are at TA = 25°C unless otherwise noted. — Symbol Parameter Max. Unit N P Power Dissipation, T = 25°C 2 W C N P D Derate Above 25°C 16 mW/°C E p RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W it a x Note: i a 3. Device is mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead minimum 6 cm2. l S i l i c o Electrical Characteristics(4) n T Values are at T = 25°C unless otherwise noted. r A a n Symbol Parameter Conditions Min. Typ. Max. Unit s i s BV Collector-Base Breakdown Voltage I = 100 μA, I = 0 500 V t CBO C E o r BV Collector-Emitter Breakdown Voltage I = 1 mA, I = 0 400 V CEO C B BV Emitter-Base Breakdown Voltage I = 100 μA, I = 0 6 V EBO E C I Collector-Base Cut-Off Current V = 400 V, I = 0 100 nA CBO CB E I Collector-Emitter Cut-Off Current V = 400 V, V = 0 500 nA CES CE BE I Emitter-Base Cut-Off Current V = 4 V, I = 0 100 nA EBO EB C V = 10 V, I = 1 mA 40 CE C V = 10 V, I = 10 mA 50 200 CE C h DC Current Gain FE V = 10 V, I = 50 mA 45 CE C V = 10 V, I = 100 mA 40 CE C I = 1 mA, I = 0.1 mA 0.40 C B V (sat) Collector-Emitter Saturation Voltage I = 10 mA, I = 1 mA 0.50 V CE C B I = 50 mA, I = 5 mA 0.75 C B V (sat) Base-Emitter Saturation Voltage I = 10 mA, I = 1 mA 0.75 V BE C B V = 20 V, I = 0, C Output Capacitance CB E 7 pF obo f = 1.0 MHz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0% © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FJT44 Rev. 1.1.0 2

F J Typical Performance Characteristics T 4 4 — N 114600 VCE=10V 10 VCC=150V PN 120 ITC/I=B2=51o0C E A p GAIN 100 VBE(off)=4V ita T 80 x N E i E M a DC CURR 246000 t[us], TI 1 l Silic h, FE 0 tf on -20 td T r -40 0.1 a 1 10 100 1000 10000 1 10 100 n s IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT is t o Figure 1. DC Current Gain Figure 2. Turn-On Switching Times r 100 V =150V 1000 CC T=25oC I/I=10 A C B f=1MHz TA=25oC CE N A 10 CIT 100 ME PA Cib TI ts CA t[us], 1 C[pF], ob 10 Cob F], tf C[pib 0.1 1 1 10 100 0.1 1 10 100 1000 I[mA], COLLECTOR CURRENT V [V], COLLECTOR-BASE VOLTAGE C CB Figure 3. Turn-Off Switching Times Figure 4. Capacitance 1.0 0.5 T=25oC E T=25oC A AG IC=1mA IC=10mA IC=50mA A T 0.8 OL 0.4 V (sat) @I/I=10 V BE CB R E AGE 0.6 V (on) @V =10V MITT 0.3 T BE CE E [V], VOL 0.4 LECTOR 0.2 L O 0.2 VCE(sat)@IC/IB=10 V] C 0.1 V[CE 0.0 0.0 0.1 1 10 100 1000 10 100 1000 10000 100000 I[mA], COLLECTOR CURRENT I[mA], COLLECTOR CURRENT C C Figure 5. On Voltage Figure 6. Collector Saturation Region © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FJT44 Rev. 1.1.0 3

F J Typical Performance Characteristics (Continued) T 4 4 — N 100 P V =10V N CE N f=10MHz E GAI TA=25oC p ENT 10 ita R x CUR ia AL l S N G i SI 1 li L c AL o M n S h, FE Tr 0.1 a 0.1 1 10 100 1000 n s I[mA], COLLECTOR CURRENT is C t o Figure 7. High Frequency Current Gain r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FJT44 Rev. 1.1.0 4

6.70 B 6.20 0.10 C B 3.10 2.90 3.25 4 1.90 A 3.70 6.10 3.30 1.90 1 3 0.84 0.60 2.30 0.95 2.30 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX 0.08 C 7.30 C 0.10 6.70 0.00 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. R0.15±0.05 10° C) DIMENSIONS DO NOT INCLUDE BURRS GAGE 5° OR MOLD FLASH. MOLD FLASH OR BURRS R0.15±0.05 DOES NOT EXCEED 0.10MM. PLANE D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. 0.35 10° E) LANDPATTERN NAME: SOT230P700X180-4BN 0° TYP 0.20 F) DRAWING FILENAME: MKT-MA04AREV3 0.25 10° 5° 0.60 MIN SEATING 1.70 PLANE DETAIL A SCALE: 2:1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: FJT44KTF FJT44TF FJT44TF_Q