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F J M A 7 9 May 2014 0 FJMA790 P N PNP Epitaxial Silicon Transistor P E p i High current surface mount PNP silicon switching transistor ta x for load management in portable applications i a l • High Collector current S i l • Low Collector-Emitter Saturation Voltage ic o • RoHS Compliant n T r a n s Pin 1 Pin 3 i s t o r C 1 6 C Collector Emitter C 2 5 C B 3 4 E Pin 6 Pin 4 MicroFET2X2 Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -35 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -2 A C PD Power Dissipation Note1) 1.56 W Note2) 0.8 W T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter Max. Units RΘJA Thermal Resistance, Junction to Ambient Note1) 80 °C/W Note2) 154 °C/W Note1): The device mounted on a 1inch2 pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material. Note2): The device mounted on a minimum pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJMA790 Rev. A3

F J Electrical Characteristics M Ta = 25°C unless otherwise noted A 7 Symbol Parameter Conditions Min. Typ. Max. Units 9 0 BV Collector-Base Breakdown Voltage I = -100µA, I = 0 -50 V CBO C E P BVCEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -35 V N P BV Emitter-Base Breakdown Voltage I = -100µA, I = 0 -5 V EBO C C E ICBO Collector Cut-off Current VCB = -35V, IC = 0 -0.1 µA p i IEBO Emitter Cut-off Current VEB = -4V, IC = 0 -0.1 µA ta x h DC Current Gain V = -1.5V, I = -1A 100 i FE CE C a V = -1.5V, I = -1.5A 100 400 l CE C S V = -3V, I = -2A 100 CE C i VCE = -2V, IC = -500mA 100 lic V Collector-Emitter Saturation Voltage I = -500mA, I = -5mA -250 mV o CE(sat) C B n IC = -1A, IB = -10mA -350 mV T IC = -2A, IB = -50mA -450 mV r a V Base-Emitter Saturation Voltage I = -1A, I = -10mA -0.9 V n BE(sat) C B s VBE(on) Base-Emitter On Voltage VCE = -2V, IC = -1A -0.9 V is t o r Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 790 FJMA790 MLP 2×2 Single 7” 8mm 3,000 units 2 www.fairchildsemi.com FJMA790 Rev. A3

F J Typical Characteristics M A 7 9 0 600 Vce=-1.5V P 500 Vce=-2.0V N 500 125oC P 125oC E Gain400 Gain400 75oC pit DC Current 300 2755ooCC Current DC300 25oC axial S e, hf200 hfe, 200 -40oC ilic o -40oC n 100 100 T r 1E-3 0.01 0.1 1 1E-3 0.01 0.1 1 a Collector Current, [A] Collector Current, [A] n s i s Figure 1. DC Current Gain, Vce=1.5V Figure 2. DC Current Gain, Vce=2V to r 0.5 500 Vce=-3.0V Ic=40Ib 125oC V]0.4 DC Current Gain340000 7255ooCC Saturation Current,[00..23 -40oC25oC hfe, 200 -40oC e(sat), 0.1 75oC c 100 V 125oC 0.0 1E-3 0.01 0.1 1 0.01 0.1 1 Collector Current, [A] Collector Current, [A] Figure 3. DC Current Gain,Vce=3V Figure 4. Collector-Emitter Satuation Voltage(1) 1.0 1.0 Ic=100Ib Ic=100Ib V]0.8 V] Current,[0.6 Current,[0.8 125oC sat), Saturation Vce(00..24 -40oC25oC 7152o5CoC Vbe(sat), Saturation 00..46 -427055oooCCC 0.0 0.01 0.1 1 0.01 0.1 1 Collector Current, [A] Collector Current, [A] Figure 5. Collector-Emitter Satuation Voltage(2) Figure 6. Base-Emitter Saturation Voltage 3 www.fairchildsemi.com FJMA790 Rev. A3

F J M Typical Performance Characteristics A (Continued) 7 9 0 1E-7 Vce=-2V Vcb=-35V P N 1 ent P A] Curr 1E-8 E itter Current, [Em 0.1 125oC 75oC 25oC -40oC bo(A), Reverse Leakage 11EE-1-90 pitaxial Silico Ic n 0.01 1E-1125 50 75 100 125 Tr 0.4 0.6 0.8 1.0 a Vfbe(on), Turn on voltage,[V] Ta(oC), Ambent Temperature n s i s Figure 7. Base- Emitter Turn On Voltage Figure 8. Collector-Base Leakage Current t o r 1E-7 2.0 Veb=-4V nt e urr 1E-8 W] 1.5 C e n,[ g o ka ati a p e Le 1E-9 Dissi 1.0 ers er v w Re Po o(A), 1E-10 d, P 0.5 b c I 1E-11 0.0 25 50 75 100 125 0 25 50 75 100 125 150 175 Ta(oC), Ambent Temperature Case Temperature, T[oC] a Figure 9. Base-Emitter Leakage Current Figure 10. Power Derating 300 100 F] 275 f=1mhz pF] 90 f=1mhz [pCib 250 [Cob 80 nput Juntion Capacitance, 111222570250505 utput Juntion Capacitance, 234567000000 I 100 O 10 0 1 2 3 4 5 0 10 20 30 40 50 Reverse Voltage, V [V] Reverse Voltage, V [V] R R Figure 11. Input Capacitance Figure 12. Output Capacitance 4 www.fairchildsemi.com FJMA790 Rev. A3

F J M Typical Performance Characteristics A (Continued) 7 9 0 Figure 12. Transient Thermal Response P N 1 P T N E SIE D = 0.5 RθJA(t) = r(t) * RθJA p RAN E RθJA = 154 °C/W ita T C FFECTIVE RESISTAN 0.1 00.2.1 P)(p xial S D EZE RMAL 0.05 t1t ilic LI E 2 o r(t), NORMA TH 00.0.021 SINGLE PULSE DTuJt y- CTCy c=l eP, *D R =θ JtA1 (/t )t2 n Tran 0.01 s i 0.0001 0.001 0.01 0.1 1 10 100 1000 s t o t , TIME (sec) 1 r 5 www.fairchildsemi.com FJMA790 Rev. A3

0.05 C 2.0 A 2X B 2.0 1.70 (0.20) 1.00 NoTraces 0.05 C 6 4 allowedin PIN1IDENT TOPVIEW 2X thisArea (cid:19)(cid:17)(cid:26)(cid:24)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) 1.05 2.30 0.10 C (cid:19)(cid:17)(cid:21)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) 0.47(6X) 0.08 C SIDEVIEW 1 3 C (cid:19)(cid:17)(cid:19)(cid:21)(cid:24)(cid:147)(cid:19)(cid:17)(cid:19)(cid:21)(cid:24) 0.65 0.40(6X) SEATING RECOMMENDED PLANE LANDPATTERNOPT1 (cid:21)(cid:17)(cid:19)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) (0.15) (0.50) (cid:19)(cid:17)(cid:28)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) (cid:19)(cid:17)(cid:22)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) 1.70 PIN1IDENT (0.20)4X 0.45 1 3 (0.20) 1.00 (cid:19)(cid:17)(cid:21)(cid:27)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) (6X) (cid:19)(cid:17)(cid:24)(cid:25)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) 6 4 (cid:20)(cid:17)(cid:19)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) (0.50) (cid:21)(cid:17)(cid:19)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) 1.05 0.66 6 4 2.30 (cid:19)(cid:17)(cid:22)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24)(6X) 0.65 0.47(6X) 0.10 C A B 1.30 1 3 0.05 C 0.40(7X) 0.65 BOTTOMVIEW RECOMMENDED NOTES: LANDPATTERNOPT2 A.PACKAGEDOESNOTFULLYCONFORM TOJEDECMO-229REGISTRATION B.DIMENSIONSAREINMILLIMETERS. C.DIMENSIONSANDTOLERANCESPER ASMEY14.5M,2009. D.LANDPATTERNRECOMMENDATIONIS EXISTINGINDUSTRYLANDPATTERN. E.DRAWINGFILENAME:MKT-MLP06Lrev4.

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