Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F J E 5 June 2014 3 0 4 D — N FJE5304D P N T NPN Triple Diffused Planar Silicon Transistor r i p l e D i f f Features u s Equivalent Circuit e • High-Voltage, High-Speed Power Switch Applications d • Wide Safe Operating Area C P • Built-in Free-Wheeling diode la n • Suitable for Electronic Ballast Applications B a • Small Variance in Storage Time r S 1 TO-126 i l 1.Emitter 2.Collector 3.Base E ic o n T r a n s Ordering Information i s t o Part Number Top Mark Package Packing Method r FJE5304D J5304D TO-126 3L Bulk FJE5304DTU J5304D TO-126 3L Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. C Symbol Parameter Value Unit V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 12 V EBO I Collector Current (DC) 4 A C I Collector Current (Pulse)(1) 8 A CP I Base Current (DC) 2 A B I Base Current (Pulse)(1) 4 A BP T Storage Temperature Range -65 to 150 °C STG Note: 1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FJE5304D Rev. 1.1.0 1

F J Thermal Characteristics E 5 Values are at TC = 25°C unless otherwise noted. 30 4 D Symbol Parameter Max. Unit — PC Collector Dissipation (TC = 25°C) 30 W N RθJC Thermal Resistance, Junction to Case 4.17 °C/W P N RθJA Thermal Resistance, Junction to Ambient 83.3 °C/W T r i p l e Electrical Characteristics(2) D i Values are at TC = 25°C unless otherwise noted. ff u s Symbol Parameter Conditions Min. Typ. Max. Unit e d BV Collector-Base Breakdown Voltage I = 1 mA, I = 0 700 V CBO C E P l BV Collector-Emitter Breakdown Voltage I = 5 mA, I = 0 400 V a CEO C B n BV Emitter-Base Breakdown Voltage I = 1 mA, I = 0 12 V a EBO E C r I Collector Cut-Off Current V = 700 V, V = 0 100 μA S CES CE EB i l ICEO Collector Cut-Off Current VCE = 400 V, IB = 0 250 μA ic o I Emitter Cut-Off Current V = 12 V, I = 0 100 μA n EBO EB C T VCE = 5 V, IC = 10 mA 10 r h DC Current Gain a FE V = 5 V, I = 2 A 8 40 n CE C s IC = 0.5 A, IB = 0.1 A 0.7 is t V (sat) Collector-Emitter Saturation Voltage I = 1 A, I = 0.2 A 1.0 V o CE C B r I = 2.5 A, I = 0.5 A 1.5 C B I = 0.5 A, I = 0.1 A 1.1 C B V (sat) Collector-Base Saturation Voltage I = 1 A, I = 0.2 A 1.2 V BE C B I = 2.5 A, I = 0.5 A 1.3 C B V Internal Diode Forward Voltage Drop I = 2 A 2.5 V f F Inductive Load Switching (V = 200 V) CC t Storage Time I = 2 A, I = 0.4 A, 0.6 μs stg C B1 V (off) = -5 V, tf Fall Time L B=E 200 μH 0.1 μs Resistive Load Switching (V = 250 V) CC t Storage Time I = 2 A, 2.9 μs stg C I = I = 0.4 A, tf Fall Time TB1 = 3B02 μs 0.2 μs P Note: 2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FJE5304D Rev. 1.1.0 2

F J Typical Performance Characteristics E 5 3 0 4 D 5 100 Vce=5V — I = 500mA I[A], COLLECTOR CURRENTC 1234 IIIIIIIIBBBBBBBBBI B======== = 13224143 500505505000000000mmmmmmmmmAAAAAAAAA h,DC CURRENT GAINFE 10 Ta=12255ooCC-25oC NPN Triple Diffus e 0 IB = 0 d 0 1 2 3 4 5 6 7 8 9 10 10.01 0.1 1 10 P l VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT an Figure 1. Static Characteristic Figure 2. DC Current Gain a r S i l i c 10 10 o E I=5I I=5I n TAG c B 25OC\b GE c B Tr L A a URATION VO 1 Ta=125OC\b ATION VOLT 1 -25OC nsistor AT -25OC\b UR 25OC V],S 0.1 SAT Ta=125OC (sat)[CE V[V],BE V 0.01 0.1 0.01 0.1 1 10 0.01 0.1 1 10 I[A], COLLECTOR CURRENT I[A], COLLECTOR CURRENT C C Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 1000 V = 250V CC I = 5I = -5I C B1 B2 t STG t STG E 1 E M M TI TI μs], ns], 100 t, t [STGF 0.1 tF t, t [STGF tF V = 200V, Clamp V =-5V, R =0 Ohm, BE(OFF) BB L=200 uH, I = 5I 0.01 10 C B1 0.1 1 10 0.1 1 10 I[A], COLLECTOR CURRENT I[A], COLLECTOR CURRENT C C Figure 5. Resistive Load Switching Time Figure 6. Inductive Load Switching Time © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FJE5304D Rev. 1.1.0 3

F J Typical Performance Characteristics (Continued) E 5 3 0 4 D 100 100 — TC=25oC Vcc=50V, I =1A, I = -1A N I[A], COLLECTOR CURRENTC 01.011 DC 1ms 10μs 1μs I[A], COLLECTOR CURRENTC 01.011 LB 1= 1mHB2 PN Triple Diffused 0.01 10 100 1000 0.0110 100 1000 10000 Pl a V [V], COLLECTOR-EMITTER VOLTAGE n VCE[V], COLLECTOR-EMITTER VOLTAGE CE a r Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area S i l i c 50 o n T r N 40 a O n TI s A DISSIP 30 isto R r WE 20 O P W], P[C 10 0 0 25 50 75 100 125 150 175 T[oC], CASE TEMPERATURE C Figure 9. Power Derating © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FJE5304D Rev. 1.1.0 4

8.30 3.45 7.70 3.05 4.00 3.80 11.20 10.80 14.20 MAX 3.20 1.95 1.35 1.55 1.70 1.50 1.00 E D 0.85 3X 0.65 #1 0.60 2.29 0.254 M 3X 0.45 TOP VIEW SIDE VIEW 3° PRODUCTION TERMINAL TERMINAL CODE LENGTH "D" LENGTH "E" TSSTU 3.45 - 4.05 6.45-7.45 TSTU 2.36 - 2.96 5.36-6.36 FRONT VIEW NONE 12.76 - 13.36 15.76-16.76 (STD LENGTH) NOTES: A. NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE B. ALL DIMENSIONS ARE IN MILLIMETERS C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS D FOR TERMINAL LENGTH "D", REFER TO TABLE E FOR TERMINAL LENGTH "E", REFER TO TABLE F. DRAWING FILENAME: MKT-TO126AArev2

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