Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 S A 1 January 2009 9 6 2 / F 2SA1962/FJA4213 J A 4 PNP Epitaxial Silicon Transistor 2 1 3 — Applications P • High-Fidelity Audio Output Amplifier N P • General Purpose Power Amplifier E p Features i t a • High Current Capability: I = -17A x • High Power Dissipation : 1C30watts 1 TO-3P ia l • High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter S • High Voltage : VCEO= -250V il • Wide S.O.A for reliable operation. ic • Excellent Gain Linearity for low THD. o n • Complement to 2SC5242/FJA4313. T • Thermal and electrical Spice models are available. r a • Same transistor is also available in: n -- TO264 package, 2SA1943/FJL4215 : 150 watts s -- TO220 package, FJP1943 : 80 watts is -- TO220F package, FJPF1943 : 50 watts to r Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter Ratings Units BV Collector-Base Voltage -250 V CBO BV Collector-Emitter Voltage -250 V CEO BV Emitter-Base Voltage -5 V EBO I Collector Current -17 A C I Base Current -1.5 A B P Total Device Dissipation(T =25°C) 130 W D C Derate above 25°C 1.04 W/°C T , T Junction and Storage Temperature - 50 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Max. Units R Thermal Resistance, Junction to Case 0.96 °C/W θJC * Device mounted on minimum pad size h Classification FE Classification R O h 55 ~ 110 80 ~ 160 FE1 © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1962/FJA4213 Rev. C 1

2 S Electrical Characteristics* A Ta=25°C unless otherwise noted 1 9 Symbol Parameter Test Condition Min. Typ. Max. Units 6 2 / BV Collector-Base Breakdown Voltage I =-5mA, I =0 -250 V F CBO C E J A BV Collector-Emitter Breakdown Voltage I =-10mA, R =∞ -250 V CEO C BE 4 2 BV Emitter-Base Breakdown Voltage I =-5mA, I =0 -5 V 1 EBO E C 3 I Collector Cut-off Current V =-230V, I =0 -5.0 µA — CBO CB E I Emitter Cut-off Current V =-5V, I =0 -5.0 µA P EBO EB C N h DC Current Gain V =-5V, I =-1A 55 160 P FE1 CE C E h DC Current Gain V =-5V, I =-7A 35 60 p FE2 CE C i t V (sat) Collector-Emitter Saturation Voltage I =-8A, I =-0.8A -0.4 -3.0 V a CE C B x i a V (on) Base-Emitter On Voltage V =-5V, I =-7A -1.0 -1.5 V BE CE C l S fT Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz il i c Cob Output Capacitance VCB=-10V, f=1MHz 360 pF o n * Pulse Test: Pulse Width=20µs, Duty Cycle≤2% T r a n Ordering Information s i s t Part Number Marking Package Packing Method Remarks o r 2SA1962RTU A1962R TO-3P TUBE hFE1 R grade 2SA1962OTU A1962O TO-3P TUBE hFE1 O grade FJA4213RTU J4213R TO-3P TUBE hFE1 R grade FJA4213OTU J4213O TO-3P TUBE hFE1 O grade © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1962/FJA4213 Rev. C 2

2 S Typical Characteristics A 1 9 6 2 / F J -20 I = -900mA A I = -1A B CURRENT ---111468 B IIBIB B = == -- 6-54000000mmmAAAIIBB == --870000mmAA GAIN 100 Tj = 125oC Tj = 25oC VCE = -5V 4213 — LECTOR --1102 IIBB == --320000mmAA RRENT Tj = -25oC PNP A], COL --68 IB = -100mA DC CU 10 Ep I[mC -4 h, FE ita -2 x i a 1 l -0 -2 -4 -6 -8 -10 0.1 1 10 S V [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT il CE i c o Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade ) n T r a n s 10000 i s Tj = 125oC Tj = 25oC VCE = -5V AGE Ic=-10Ib to T r L N 100 O GAI N V 1000 T Tj = -25oC O N TI E A RR UR U T Tj=25oC C 10 A Tj=125oC h, DC FE at)[mV], S 100 Tj=-25oC s e( 1 Vc 10 0.1 1 10 0.1 1 10 I[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT C Figure 3. DC current Gain ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage 14 10000 E Ic=-10Ib 12 G TA NT VCE = 5V OL RE 10 V R TION Tj=-25oC Tj=25oC OR CU 8 URA 1000 ECT 6 V], SAT Tj=125oC A], COLL 4 at)[m I[C 2 s e( 0 Vb 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.1 1 10 Ic[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1962/FJA4213 Rev. C 3

2 S Typical Characteristics A 1 9 6 2 / F -100 J A oesistance, R[C / W]thjc 000001......567890 ECTOR CURRENT -1-01 IICC MMAAXX.. ((PDuCls)ed*) DC100m1s*0ms* 4213 — PNP al R 0.4 OLL E m 0.3 C -0.1 p her 0.2 A], *SINGLE NONREPETITIVE it ent T 0.1 I [C PULSE TC=25[oC] axi si -0.01 a an 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 1 10 100 l Tr S Pulse duration [sec] VCE [V], COLLECTOR-EMITTER VOLTAGE ili c o Figure 7. Thermal Resistance Figure 8. Safe Operating Area n T r a n 160 s i s 140 t o ON 120 r TI A P 100 SI S DI 80 R E W 60 O P W], 40 P[C 20 0 0 25 50 75 100 125 150 175 T[oC], CASE TEMPERATURE C Figure 9. Power Derating © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1962/FJA4213 Rev. C 4

2 S A 1 Package Dimensions 9 6 2 / F J A 4 2 1 3 TO-3P — P N P 15.60 ±0.20 E p ø3.20 ±0.10 193..6600 ±±00.2.200 ±0 0.20 14..5800 +–±000...012550 itaxia 8 3. l S i l i c o n T ±3.90 0.20 ±12.76 0.20 ±19.90 0.20 ±23.40 0.20 ±18.70 0.20 ransisto 1 r 2.00 ±0.20 0 2 0. ± 3.00 ±0.20 50 30 3. 0. ± 1.00 ±0.20 50 1.40 ±0.20 6. 1 +0.15 0.60–0.05 5.45TYP 5.45TYP [5.45 ±0.30] [5.45 ±0.30] Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1962/FJA4213 Rev. C 5

22 SS AA 11 99 66 22 // FF JJ AA 44 22 11 33 P N P E p i t a x i a l S i l i c o n T r a n s i s t o r © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1962/FJA4213 Rev. C 6

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