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F G H March 2015 4 0 N 6 FGH40N60SF 0 S F 600 V, 40 A Field Stop IGBT — 6 Features General Description 0 0 • High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop V , • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A IGBTs offer the optimum performance for solar inverter, UPS, 4 welder and PFC applications where low conduction and switch- 0 • High Input Impedance ing losses are essential. A • Fast Switching: EOFF = 8 uJ/A F • RoHS Compliant i e l Applications d S • Solar Inverter, UPS, Welder, PFC to p I G B T C E C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES Gate to Emitter Voltage ±20 V V GES Transient Gate-to-Emitter Voltage ±30 Collector Current @ T = 25oC 80 A I C C Collector Current @ T = 100oC 40 A C ICM (1) Pulsed Collector Current @ TC = 25oC 120 A Maximum Power Dissipation @ T = 25oC 290 W P C D Maximum Power Dissipation @ T = 100oC 116 W C T Operating Junction Temperature -55 to +150 oC J T Storage Temperature Range -55 to +150 oC stg Maximum Lead Temp. for soldering TL Purposes, 1/8” from case for 5 seconds 300 oC Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC(IGBT) Thermal Resistance, Junction to Case - 0.43 oC/W RθJA Thermal Resistance, Junction to Ambient - 40 oC/W ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH40N60SF Rev.1.5

F G Package Marking and Ordering Information H 4 0 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity N 6 FGH40N60SFTU FGH40N60SF TO-247 Tube N/A N/A 30 0 S F Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted — 6 Symbol Parameter Test Conditions Min. Typ. Max. Unit 0 0 V Off Characteristics , 4 BV Collector to Emitter Breakdown Voltage V = 0 V, I = 250 μA 600 - - V 0 CES GE C ΔBV / Temperature Coefficient of Breakdown A ΔT CES Voltage VGE = 0 V, IC = 250 μA - 0.6 - V/oC F J i e ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA ld IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA S t o p On Characteristics I V G-E Threshold Voltage I = 250 μA, V = V 4.0 5.0 6.5 V G GE(th) C CE GE B IC = 40 A, VGE = 15 V - 2.3 2.9 V T V Collector to Emitter Saturation Voltage CE(sat) ITC = = 4 102 A5,o VCGE = 15 V, - 2.5 - V C Dynamic Characteristics C Input Capacitance - 2110 - pF ies V = 30 VV = 0 V, C Output Capacitance CE , GE - 200 - pF oes f = 1 MHz C Reverse Transfer Capacitance - 60 - pF res Switching Characteristics t Turn-On Delay Time - 25 - ns d(on) t Rise Time - 42 - ns r td(off) Turn-Off Delay Time VCC = 400 V, IC = 40 A, - 115 - ns tEf FTuarlln T-Oimne Switching Loss RInGd u=c t1iv0e Ω L,o VaGdE, T=C 1 =5 2V5,oC -- 12.173 5-4 mnsJ on E Turn-Off Switching Loss - 0.31 - mJ off E Total Switching Loss - 1.44 - mJ ts t Turn-On Delay Time - 24 - ns d(on) t Rise Time - 43 - ns r td(off) Turn-Off Delay Time VCC = 400 V, IC = 40 A, - 120 - ns tEf FTuarlln T-Oimne Switching Loss RInGd u=c t1iv0e Ω L,o VaGdE, T=C 1 =5 1V2,5oC -- 13.104 -- mnsJ on E Turn-Off Switching Loss - 0.48 - mJ off E Total Switching Loss - 1.62 - mJ ts Q Total Gate Charge - 120 - nC g V = 400 V, I = 40 A, Q Gate to Emitter Charge CE C - 14 - nC ge VGE = 15 V Q Gate to Collector Charge - 58 - nC gc ©2009 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FGH40N60SF Rev.1.5

F G Typical Performance Characteristics H 4 0 N Figure 1. Typical Output C haracteristics Figure 2. Typical Outpu t Characteristics 60 120 120 S TC = 25oC 20V TC = 125oC 20V 15V F — 100 15V 100 12V or Current, I [A]C 6800 12V or Current, I [A]C 6800 600 V, 40 A Collect 40 10V Collect 40 10V Fie l 20 20 d VGE = 8V VGE = 8V St 0 0 o 0.0 1.5 3.0 4.5 6.0 0.0 1.5 3.0 4.5 6.0 p Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] IG B Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics T Characteristics 80 120 Common Emitter Common Emitter VGE = 15V VCE = 20V nt, I [A]C 60 TTCC == 2152o5CoC ent, I [A]C 80 TTCC == 2152o5CoC urre 40 Curr ollector C 20 Collector 40 C 0 0 0 1 2 3 4 6 8 10 12 13 Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V] Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V GE Temperature at Variant Current Level 4.0 20 Common Emitter Common Emitter mitter Voltage, V [V]CE 233...505 VGE = 15V 8400AA mitter VoltageV [V], CE11268 TC = -40oC Collector-E 12..50 IC = 20A Collector-E 4 IC = 20A 40A 80A 1.0 0 25 50 75 100 125 4 8 12 16 20 Case Temperature, TC [oC] Gate-Emitter Voltage, VGE [V] ©2009 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FGH40N60SF Rev.1.5

F G Typical Performance Characteristics H 4 0 N Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 6 0 20 20 S Common Emitter Common Emitter F Emitter VoltageV [V], CE11268 TC = 25oC []mitter Voltage, V VCE11268 TC = 125oC — 600 V, 40 A ctor- 40A 80A or-E 40A 80A Fie Colle 4 IC = 20A Collect 4 IC = 20A ld St o 0 0 p 4 8 12 16 20 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] IG B Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics T 5000 15 Common Emitter Common Emitter VGE = 0V, f = 1MHz TC = 25oC 4000 Ciss TC = 25oC [V]E12 G 200V pF] e, V Vcc = 100V 300V e [3000 ag 9 nc olt a V apacit2000 Coss mitter 6 C E e- 1000 at 3 G C rss 0 0 0.1 1 10 30 0 50 100 150 Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC] Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs. Gate Resistance 400 200 100 10μs A] 100 Collector Current, I [c 01.011 SPiunlgsele T NCo =n r2e5poeCtitive 11100m 0DmsμCss Switching Time [ns] trtd(on) CVICCo =Cm 4=m0 4oA0n0 EVm, VitGteE r= 15V Curves must be derated linearly with increase TC = 25oC in temperature TC = 125oC 0.01 10 1 10 100 1000 0 10 20 30 40 50 Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω] ©2009 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FGH40N60SF Rev.1.5

F G Typical Performance Characteristics H 4 0 N Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs. 6 Gate Resistance Collector Current 0 S 5500 500 F Common Emitter Common Emitter — VCC = 400V, VGE = 15V VGE = 15V, RG = 10Ω IC = 40A TC = 25oC 60 1000 TC = 25oC T = 125oC 0 me [ns] TC = 125oC td(off) me [ns] 100 C tr V, 4 g Ti g Ti 0 A hin 100 hin F Switc tf Switc td(on) ield S t o 10 10 p 0 10 20 30 40 50 20 40 60 80 I G Gate Resistance, RG [Ω] Collector Current, IC [A] B T Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance Collector Current 500 10 Common Emitter Common Emitter VGE = 15V, RG = 10Ω VCC = 400V, VGE = 15V TC = 25oC IC = 40A me [ns] 100 TC = 125oC td(off) ss [mJ] TTCC == 2152o5CoC Eon Ti Lo ng tf ng 1 hi hi c c Swit Swit Eoff 10 00..32 20 40 60 80 0 10 20 30 40 50 Collector Current, IC [A] Gate Resistance, RG [Ω] Figure 17. Switching Loss vs. Collector Current Figure 18. Load Current vs. Frequency 30 Common Emitter V = 15V, R = 10Ω GE G 10 T = 25oC C E J] TC = 125oC on m s [ s o E g L 1 off n hi c wit S 0.1 20 30 40 50 60 70 80 Collector Current, IC [A] ©2009 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FGH40N60SF Rev.1.5

F G Typical Performance Characteristics H 4 0 N Figure 19. Turn off Switching 6 SOA Characteristics 0 S F 200 — 100 6 0 0 A] V nt, I [C , 40 or Curre 10 A Fi ct e Colle ld S Safe Operating Area t o V = 15V, T = 125oC p GE C 1 I 1 10 100 1000 G B Collector-Emitter Voltage, VCE [V] T Figure 20. Transient Thermal Impedance of IGBT 1 c] hj 0.5 Zt e [ 0.1 0.2 s on 0.1 p s 0.05 e R 0.02 al 0.01 0.01 m er single pulse h T Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2009 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FGH40N60SF Rev.1.5

4.82 15.87 E B E 4.58 15.37 A 4.13 12.81 E 3.53 6.85 3.65 E 6.61 3.51 0.254 M B AM 5.58 5.34 E 1.35 5.20 0.51 4.96 20.82 20.32 E 13.08 MIN 1 2 3 3 1 1.87 33..9639 E 1.53 (2X) 16.25 E 15.75 1.60 2.77 2.43 0.71 5.56 0.51 1.35 2.66 1.17 2.29 0.254 M B AM 11.12 NOTES: UNLESS OTHERWISE SPECIFIED. A. PACKAGE REFERENCE: JEDEC TO-247, ISSUE E, VARIATION AB, DATED JUNE, 2004. B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DRAWING CONFORMS TO ASME Y14.5 - 1994 E DOES NOT COMPLY JEDEC STANDARD VALUE F. DRAWING FILENAME: MKT-TO247A03_REV04

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