Doc No. TT4-EA-12659 Revision. 2 Product Standards MOS FET FG6943010R FG6943010R Silicon N-channel MOSFET(FET1) Silicon P-channel MOSFET(FET2) Unit : mm 1.6 0.2 0.13 6 5 4 For switching 26 .. 11  Features 1 2 3  Low drive voltage: 2.5 V drive (0.6)  Halogen-free / RoHS compliant (0.5)(0.5) (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1.0  Marking Symbol V7 1. Source(FET1) 4. Source(FET2) 2. Gate(FET1) 5. Gate(FET2) 3. Drain(FET2) 6. Drain(FET1)  Basic Part Number FJ330301 + FK330301 (Individual) Panasonic SSMini6-F3-B JEITA SC-107C  Packaging Code SOT-666 Embossed type (Thermo-compression sealing) 8 000 pcs / reel (standard) Internal Connection (D1) (G2) (S2) 6 5 4  Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit FET1 Drain-source voltage VDS 30 V Gate-source voltage VGS 12 V FET1 Drain current ID 100 mA FET2 Pulse drain current IDp 200 mA Drain-source voltage VDS -30 V 1 2 3 Gate-source voltage VGS 12 V FET2 (S1) (G1) (D2) Drain current ID -100 mA Pulse drain current IDp -200 mA Pin name Total power dissipation PT 125 mW Channel temperature Tch 150 C 1. Source(FET1) 4. Source(FET2) Overall Operating ambient temperature Topr -40 to + 85 C 2. Gate(FET1) 5. Gate(FET2) Storage temperature Tstg -55 to +150 C 3. Drain(FET2) 6. Drain(FET1) Page 1 of 8 Established :2010-06-30 Revised :2013-10-10

Doc No. TT4-EA-12659 Revision. 2 Product Standards MOS FET FG6943010R  Electrical Characteristics Ta = 25C  3C FET1 Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = 1 mA, VGS = 0 30 V Drain-source cutoff current IDSS VDS = 30 V, VGS = 0 1.0 A Gate-source cutoff current IGSS VGS = 10 V, VDS = 0 10 A Gate threshold voltage VTH ID = 1.0 A, VDS = 3.0 V 0.5 1.0 1.5 V RDS(on)1 ID = 10 mA, VGS = 2.5 V 3 6  Drain-source ON resistance RDS(on)2 ID = 10 mA, VGS = 4.0 V 2 3  Forward transfer admittance |Yfs| ID = 10 mA, VDS = 3.0 V 20 55 mS Input capacitance Ciss 12 pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF Reverse transfer capacitance Crss 3 pF VDD = 3 V, VGS = 0 to 3 V Turn-on time *1 ton 100 ns ID = 10 mA VDD = 3 V, VGS = 3 to 0 V Turn-off time *1 toff 100 ns ID = 10 mA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 FET1 Turn-on and Turn-off test circuit VVDDDD==33VV IIDD==1100mmAA RRLL==330000ΩΩ DD VVoouutt VViinn VVGGSS==00～～33VV GG 5500ΩΩ SS Page 2 of 8 Established :2010-06-30 Revised :2013-10-10

Doc No. TT4-EA-12659 Revision. 2 Product Standards MOS FET FG6943010R  Electrical Characteristics Ta = 25C  3C FET2 Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = -1mA, VGS = 0 -30 V Drain-source cutoff current IDSS VDS = -30 V, VGS = 0 -1.0 A Gate-source cutoff current IGSS VGS = 10 V, VDS = 0 10 A Gate threshold voltage VTH ID = -1.0 A, VDS = -3.0 V -0.5 -1.0 -1.5 V RDS(on)1 ID = -10 mA, VGS = -2.5 V 7 17  Drain-source ON resistance RDS(on)2 ID = -10 mA, VGS = -4.0 V 4 7  Forward transfer admittance |Yfs| ID = -10 mA, VDS = -3.0 V 20 40 mS Input capacitance Ciss 12 pF Output capacitance Coss VDS = -3 V, VGS = 0, f = 1 MHz 7 pF Reverse transfer capacitance Crss 3 pF VDD = -3 V, VGS = 0 to -3 V, Turn-on time *1 ton 100 ns ID = -10 mA VDD = -3 V, VGS = -3 to 0 V, Turn-off time *1 toff 100 ns ID = -10 mA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 FET2 Turn-on and Turn-off test circuit VVDDDD==--33VV IIDD==--1100mmAA RRLL==330000ΩΩ DD VVoouutt VViinn VVGGSS==00～～--33VV GG 5500ΩΩ SS Page 3 of 8 Established :2010-06-30 Revised :2013-10-10

Doc No. TT4-EA-12659 Revision. 2 Product Standards MOS FET FG6943010R Technical Data ( reference ) FET1(N-ch.) ID - VDS ID - VGS 0.1 1 0.1 D (A) D (A) urrent I 0.05 VGS = 4.0 V urrent I 0.01 Ta = 85 ℃ Drain C 2.5 V 2.0 V Drain c 0.001 25 ℃ 0.0001 -40 ℃ 1.5 V 0 0.00001 0 0.5 1 0 1 2 3 Drain-source Voltage VDS (V) Gate-source voltage VGS (V) VDS - VGS RDS(on) - ID 0.3 10000 e V) c DS ( stan 2.5 V V si e 0.2 10 mA Re) e Voltag ID = 20 mA n-State on) (m1000 VGS = 4.0 V ourc 0.1 e ODS( n-s urcR Drai 5 mA n-so ai 0 Dr 100 0 1 2 3 4 5 0.001 0.01 0.1 Gate-source Voltage VGS (V) Drain Current ID (A) Capacitance - VDS 100 F) p C ( e Ciss c 10 n a cit Coss a p a C Crss 1 0.1 1 10 100 Drain-source Voltage VDS (V) Page 4 of 8 Established :2010-06-30 Revised :2013-10-10

Doc No. TT4-EA-12659 Revision. 2 Product Standards MOS FET FG6943010R Technical Data ( reference ) FET1(N-ch.) Vth - Ta RDS(on) - Ta 2 3 ge ce VGS = 2.5V a n d Volt esista) 2 sholV) On-rn) ( 4.0 V ource TreVth ( 1.5 n-source RDS(o 1 ate-s Drai G 0 1 -50 0 50 100 150 -50 0 50 100 150 Temperature (℃) Temperature (℃) PD - Ta 0.2 W) D ( P n o ati p si 0.1 s Di er w o P al ot T 0 0 50 100 150 Temperature Ta (C) Rth - tsw Safe Operating Area 1000 10 W) C/ 1 IDp = 0.2 A esistance Rth ( 10100 n Current ID (A) 0.00.11 Ois pliemraitetiodn b iyn RthDisS a(orena) 1101100 msm msss R ai mal Dr 0.001 Ta = 25 ℃, DC Glass epoxy board (25.4×25.4×t0.8 mm) er coated with copper foil, Th 1 which has more than 300 mm2. 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 Pulse Width tsw (s) Drain-source Voltage VDS (V) Page 5 of 8 Established :2010-06-30 Revised :2013-10-10

Doc No. TT4-EA-12659 Revision. 2 Product Standards MOS FET FG6943010R Technical Data ( reference ) FET2(P-ch.) ID - VDS ID - VGS -0.1 -0.1 VGS = -4.0 V A) ent ID ( -0.05 -2.5 V nt ID (A)-0.05 Curr urre c n n Ta = 85 ℃ ai -1.5 V ai Dr Dr 25 ℃ -2.0 V -40 ℃ 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 0 -1 -2 -3 Gate-source voltage VGS (V) Drain-source Voltage VDS (V) VDS - VGS RDS(on) - ID -0.5 1000000 e V) nc 1000 S ( -0.4 sta VD esi 100000 Drain-source Voltage ---000...321 -10 m-5A mA ID= -20 mA n-source On-state RRDS(on) () 111001000010000 V-2G.5S V = -4.0 V ai 0 Dr 0.1100 0 -1 -2 -3 -4 -5 -6 -0.001 -0.01 -0.1 Gate-source Voltage VGS (V) Drain Current ID (A) Capacitance - VDS 100 F) p C ( e Ciss c10 n a acit Coss p a C Crss 1 -0.1 -1 -10 -100 Drain-source Voltage VDS (V) Page 6 of 8 Established :2010-06-30 Revised :2013-10-10

Doc No. TT4-EA-12659 Revision. 2 Product Standards MOS FET FG6943010R Technical Data ( reference ) FET2(P-ch.) Vth - Ta RDS(on) - Ta -1 14 e e c 12 g n a a VGS = 2.5 V d Volt -1.5 esist) 10 sholV) On-rn) ( 8 source TheVth (-2-.25 n-source RDS(o 46 4.0 V Gate- Drai 2 0 -3 -50 0 50 100 150 -50 0 50 100 150 Temperature (℃) Temperature (℃) PD - Ta 0.2 W) D ( P n o ati p si 0.1 s Di er w o P al ot T 0 0 50 100 150 Temperature Ta (C) Rth -tsw Safe Operating Area 1000 -1.0E+01 W) C/ -1.0E+00  100 IDp = -0.2 A ce Rth ( nt ID (A) -1.0E-01 11 0m mss n 10 e sista Curr -1.0E-02 Operation in this area 110 s0 ms al Re 1 Drain Ta = 25 °C, is limited by RDS(on) DC m -1.0E-03 Glass epoxy board (25.4 × 25.4 × t0.8mm) er coated with copper foil, h which has more than 300mm2. T 0.1 -1.0E-04 0.001 0.01 0.1 1 10 100 1000 -0.01 -0.1 -1 -10 -100 Pulse Width tsw (s) Drain-source Voltage VDS (V) Page 7 of 8 Established :2010-06-30 Revised :2013-10-10

Doc No. TT4-EA-12659 Revision. 2 Product Standards MOS FET FG6943010R SSMini6-F3-B Unit: mm 1.60±0.05 +0.05 +0.05 0.13-0.02 0.20-0.02 6 5 4 5 5 0 0 . . 0 0 ± ± 0 0 2 6 . . 1 1 ) ° 1 2 3 5 ( 5 (0.5) (0.5) 0 . 0 ± 1.00±0.05 0 2 . 0 5 0 . 0 ± (5°) 5 5 . ) 0 7 2 . 0 ( 5 0 . 0 o t 0  Land Pattern (Reference) (Unit : mm 0.5 0.5 6 . 1 4 . 0 0.35 Page 8 of 8 Established :2010-06-30 Revised :2013-10-10

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