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  • 型号: FFB2907A
  • 制造商: Fairchild Semiconductor
  • 库位|库存: xxxx|xxxx
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FFB2907A产品简介:

ICGOO电子元器件商城为您提供FFB2907A由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 FFB2907A价格参考。Fairchild SemiconductorFFB2907A封装/规格:晶体管 - 双极 (BJT) - 阵列, Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 250MHz 300mW Surface Mount SC-70-6。您可以下载FFB2907A参考资料、Datasheet数据手册功能说明书,资料中有FFB2907A 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS DUAL PNP 60V 600MA SC70-6两极晶体管 - BJT PNP Multi-Chip Trans General Purpose

产品分类

晶体管(BJT) - 阵列分离式半导体

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,Fairchild Semiconductor FFB2907A-

数据手册

点击此处下载产品Datasheet

产品型号

FFB2907A

PCN封装

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PCN设计/规格

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不同 Ib、Ic时的 Vce饱和值(最大值)

1.6V @ 50mA,500mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

100 @ 150mA,10V

产品种类

两极晶体管 - BJT

供应商器件封装

SC-70-6

其它名称

FFB2907ACT

功率-最大值

300mW

包装

剪切带 (CT)

单位重量

28 mg

发射极-基极电压VEBO

5 V

商标

Fairchild Semiconductor

增益带宽产品fT

250 MHz

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

6-TSSOP,SC-88,SOT-363

封装/箱体

SC70-6-

工厂包装数量

3000

晶体管极性

PNP

晶体管类型

2 PNP(双)

最大功率耗散

0.3 W

最大工作温度

+ 150 C

最大直流电集电极电流

0.6 A

最小工作温度

- 55 C

标准包装

1

电压-集射极击穿(最大值)

60V

电流-集电极(Ic)(最大值)

600mA

电流-集电极截止(最大值)

-

直流电流增益hFE最大值

300

直流集电极/BaseGainhfeMin

100

系列

FFB2907A

配置

Dual

集电极—发射极最大电压VCEO

60 V

集电极—基极电压VCBO

60 V

集电极—射极饱和电压

1.6 V

集电极连续电流

0.6 A

零件号别名

FFB2907A_NL

频率-跃迁

250MHz

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PDF Datasheet 数据手册内容提取

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F F B 2 January 2014 9 0 7 A / F M FFB2907A / FMB2907A / MMPQ2907A B 2 PNP Multi-Chip General-Purpose Amplifier 9 0 7 A / Description M M P This device is designed for use as a general-purpose Q amplifier and switch for collector currents to 500 mA. 2 Sourced from Process 63. 9 0 7 A — Block Diagram P N P M u E2 E2 C2 lt B2 i- C C1 h B2 B1 i p SC70-6 C2 G B1 Mark: .2F pin #1 E1 C1 E1 e n e r a l Figure 1. FFB2907A Device Package Figure 2. FFB2907A Internal Connections - P u r C2 p E1 o C2 B2 s C1 e A B2 E1 E2 m E2 pin #1 B1 p l SuperSOT™-6 if C1 B1 i Mark: .2F e Dot denotes pin #1 r Figure 3. FMB2907A Device Package Figure 4. FMB2907A Internal Connections B4 E4 E1 B2 E2 B2 E3 B3 E4 B4 B3 E3 B2 E2 B1 E1 C4 C4 C3 C3 C2 SOIC-16 C2 C1 Mark: pin #1C1 MMPQ2907A C1 C1 C2 C2 C3 C3 C4 C4 Figure 5. MMPQ2907A Device Package Figure 6. MMPQ2907A Internal Connections © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 1

F F Ordering Information B 2 9 Part Number Top Mark Package Packing Method 0 7 FFB2907A .2F SC70 6L Tape and Reel A / FMB2907A .2F SSOT 6L Tape and Reel F M MMPQ2907A MMPQ2907A SOIC 16L Tape and Reel B 2 9 0 7 A Absolute Maximum Ratings(1),(2) / M Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- M ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- P tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The Q absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. 2 A 9 0 Symbol Parameter Value Unit 7 A V Collector-Emitter Voltage -60 V CEO — V Collector-Base Voltage -60 V CBO P N V Emitter-Base Voltage -5.0 V EBO P IC Collector Current - Continuous -600 mA M T , T Junction and Storage Temperature -55 to +150 °C u J STG l t i - Notes: C h 1. These ratings are based on a maximum junction temperature of 150°C. i p 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or G low-duty cycle operations. e n e r a l - P Thermal Characteristics(3) u r Values are at T = 25°C unless otherwise noted. p A o s Max. e Symbol Parameter Unit A FFB2907A FMB2907A MMPQ2907A m Total Device Dissipation 300 700 1,000 mW p PD Derate Above 25°C 2.4 5.6 8.0 mW/°C lifi e r Thermal Resistance, Junction to Ambient 415 180 Thermal Resistance, Junction to Ambient, 125 RθJA Effective 4 Die °C/W Thermal Resistance, Junction to Ambient, 240 Each Die Note: 3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 2

F F Electrical Characteristics(4) B 2 9 Values are at TA = 25°C unless otherwise noted. 0 7 Symbol Parameter Conditions Min. Typ. Max. Unit A / Collector-Emitter Breakdown F V(BR)CEO Voltage(4) IC = -10 mA, IB = 0 -60 V M B V Collector-Base Breakdown Voltage I = -10 μA, I = 0 -60 V 2 (BR)CBO C E 9 V Emitter-Base Breakdown Voltage I = -10 μA, I = 0 -5.0 V 0 (BR)EBO E C 7 A I Base Cut-Off Current V = -30 V, V = -0.5 V -50 nA BL CE EB / I Collector Cut-Off Current V = -30 V, V = -0.5 V -50 nA M CEX CE EB M V = -50 V, I = 0 -0.02 I Collector Cut-Off Current CB E μA P CBO V = -50 V, I = 0, T = 125°C -20 Q CB E A 2 I = -0.1 mA, V = -10 V 75 9 C CE 0 I = -1.0 mA, V = -10 V 100 7 C CE A hFE DC Current Gain IC = -10 mA, VCE = -10 V 100 — IC = -150 mA, VCE = -10 V(4) 100 300 P N I = -500 mA, V = -10 V(4) 50 C CE P Collector-Emitter Saturation IC = -150 mA, IB = -15 mA -0.4 M VCE(sat) Voltage(4) IC = -500 mA, IB = -50 mA -1.6 V ult i IC = -150 mA, IB = -15 mA(4) -1.3 -C VBE(sat) Base-Emitter Saturation Voltage V h IC = -500 mA, IB = -50 mA -2.6 ip f Current Gain-Bandwidth Product IC = -50 mA, VCE =- 20 V, 250 MHz G T f = 100 MHz e n C Output Capacitance V = -10 V, I = 0, f = 100 kHz 6.0 pF e ob CB E r a Cib Input Capacitance VEB = -2.0 V, IC = 0, f = 100 kHz 12 pF l- P ton Turn-On Time 30 ns u V = -30 V, I = -150 mA, r t Delay Time CC C 8 ns p d IB1 = -15 mA o t Rise Time 20 ns s r e t Turn-Off Time 80 ns A off V = -6.0 V, I = -150 mA, m t Storage Time CC C 60 ns s I = I = -15 mA p B1 B2 l t Fall Time 20 ns i f f i e Note: r 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 3

F F Typical Performance Characteristics B 2 9 0 7 A V) AIN 500 GE ( 0.5 / F RRENT G 400 125 °C V C E = 5V R VOLTA 0.4 β = 10 MB29 U E C T 0 ED 300 MIT 0.3 25 °C 7A S E UL 200 25 °C OR 0.2 / L P CT M A E M TYPIC 100 - 40 °C COLL 0.1 125 °C - 40 °C PQ h - FE 00.1 0.3I C - C1OLLEC3TOR C10URRE3N0T (m1A0)0 300 V - CESAT 01 I C - COLL1E0CTOR CURRENT1 0(m0A) 500 2907 A Figure 7. Typical Pulsed Current Gain vs. Figure 8. Collector-Emitter Saturation Voltage vs. — Collector Current Collector Current P N V) P VOLTAGE (V) 0.81 - 40 °C N VOLTAGE ( 0.81 - 40 °C Multi-C V - BASE EMITTER BESAT000...24601 I -1 2C5O °CL2L51 E°0CCTOR CURRENT1 0(m0Aβ) = 10 500 V - BASE EMITTER OBE(ON)000...24600.1 I - CO2L5 L°CEC1TO1R2 5C °CURRENT V ( Cm E A =)1 05V 25 hip General-Pu C C r p Figure 9. Base-Emitter Saturation Voltage vs. Figure 10. Base-Emitter On Voltage vs. o Collector Current Collector Current s e A m RENT (nA) 10100 VC B = 35V pF) 1260 plifier UR E ( C C 12 CTOR 1 CITAN 8 C i b E A L P COL 0.1 CA 4 Cob I - CBO0.01 0 25 50 75 100 125 0.1 1 10 50 T A - AMBIENT TEMPERATURE (° C) REVERSE BIAS VOLTAGE (V) Figure 11. Collector Cut-Off Current vs. Figure 12. Input and Output Capacitance vs. Ambient Temperature Reverse Bias Voltage © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 4

F F Typical Performance Characteristics (Continued) B 2 9 0 7 A / F 250 500 M I B 1 = I B 2 = 1I0c I B 1 = I B 2 = 1I0c B 200 400 2 V c c = 15 V V c c = 15 V 90 nS) 150 t s nS) 300 7A E ( E ( / TIM 100 tr tf TIM 200 t o f f MM 50 100 P td ton Q 2 0 0 9 10 100 1000 10 100 1000 0 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) 7 A Figure 13. Switching Times vs. Collector Current Figure 14. Turn-On and Turn-Off Times vs. — Collector Current P N P A) 50 1 M m u ASE CURRENT ( 1200 t r = 15 V DISSIPATION (W) 0.07.55 SOT-6 SOIC-16 lti-Chip G N B 5 30 ns ER SC70-6 en 0 W N O 0.25 e I - TURB1 1210 60 ns 100 500 P - PD 00 25 50 75 100 125 150 ral-Pu I C - COLLECTOR CURRENT (mA) TEMPERATURE ( ° C) rp o Figure 15. Rise Time vs. Figure 16. Power Dissipation vs. s e Collector and Turn-On Base Current Ambient Temperature A m p l i f i e r © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 5

F F Typical Performance Characteristics (f = 1.0 kHz) B 2 9 0 7 A A V / AT I = -10mC 25 hoe hre AT V = -10CE11..23 h r e and hoe hhhrifeee FMB29 S S hoe 0 E hfe E 7 LU 1 LU 1.1 A A A V V / E TO 0.5 hie E TO 1 MM TIV TIV hie P A A Q R. REL 0.2 VT C A E = = 2 -51 o0C V R. REL 0.9 hfe IT C A = = - 2150 moCA 290 CHA 0.1_ 1 _ 2 _ 5 _ 10 _ 20 _ 50 CHA 0.8-4 -8 -12 -16 -20 7A I C - COLLECTOR CURRENT (mA) V C E - COLLECTOR VOLTAGE (V) — Figure 17. Common Emitter Characteristics Figure 18. Common Emitter Characteristics P N C P oT = 25 A11..45 VI C C =E =-1 -01m0 AV hhfiee Mul UES AT 11..23 hhoree ti-Ch AL 1.1 hoe ip O V 1 G E T 0.9 hre e V n ATI 0.8 hie e EL 0.7 ra R l R. 0.6 hfe -P HA 0.5 u C -40 -20 0 20 40 60 80 100 r T A - AMBIENT TEMPERATURE ( o C) po s Figure 19. Common Emitter Characteristics e A m p l i f i e r © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 6

F F Physical Dimensions B 2 9 0 7 A SC70 6L / F M SYMM B CL 2 9 2.00±0.20 A 0.65 0 0.50 MIN 7 A 6 4 B / M M PIN ONE P 1.25±0.10 1.90 Q 2 9 0 1 3 7 A (0.25) 0.30 — 0.15 0.40 MIN 0.10 A B 1.30 P 0.65 N P LAND PATTERN RECOMMENDATION 1.30 M u l 10..0800 SEE DETAIL A ti- C h i p 1.10 0.80 G e C 00..1000 0.10 C 2.10±0.30 ner a SEATING l PLANE -P u r NOTES: UNLESS OTHERWISE SPECIFIED p o GAGE A) THIS PACKAGE CONFORMS TO EIAJ s PLANE (R0.10) SC-88, 1996. e B) ALL DIMENSIONS ARE IN MILLIMETERS. A C) DIMENSIONS DO NOT INCLUDE BURRS m 0.25 0.10 OR MOLD FLASH. p 0.20 D) DRAWING FILENAME: MKT-MAA06AREV6 li f i e r 0.46 30° 0.26 0° SCALE: 60X Figure 20. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MAA06A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MAA06A.pdf. © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 7

F F Physical Dimensions (Continued) B 2 9 0 7 A SSOT 6L / F M B 2 9 0 7 A / M M P Q 2 9 0 7 A — P N P M u l t i - C h i p G e n e r a l - P u r p o s e A m p l i f i e r Figure 21. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA06A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA06A.pdf. © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 8

F F Physical Dimensions (Continued) B 2 9 0 7 A SO 16L NB / F M B 2 9 10.00 0 9.80 A 7 A 8.89 / M 16 9 B 1.75 M P Q 4.00 2 6.00 5.6 3.80 9 0 7 A 1 8 — PIN ONE 0.51 INDICATOR 1.27 P 0.35 1.27 0.65 N (0.30) P 0.25 M C B A LAND PATTERN RECOMMENDATION M u l t 1.75 MAX i- 1.50 SEE DETAIL A C 1.25 h i p 00..2150 C 00..2159 G e 0.10 C n e r a l - 0.50 P X 45° 0.25 u NOTES: UNLESS OTHERWISE SPECIFIED (R0.10) r p GAGE PLANE A) THIS PACKAGE CONFORMS TO JEDEC o (R0.10) MS-012, VARIATION AC, ISSUE C. s B) ALL DIMENSIONS ARE IN MILLIMETERS. e 8° 0.36 C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD 0° FLASH AND TIE BAR PROTRUSIONS A D) CONFORMS TO ASME Y14.5M-1994 m E) LANDPATTERN STANDARD: SOIC127P600X175-16AM F) DRAWING FILE NAME: M16AREV12. p l i 0.90 SEATING PLANE fi 0.50 e r (1.04) DETAIL A SCALE: 2:1 Figure 22. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/M1/M16A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-M16A.pdf. © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 9

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower(cid:2) F-PFS(cid:2) Sync-Lock™ AX-CAP®* FRFET® ® BitSiC(cid:2) Global Power ResourceSM PowerTrench® ®* Build it Now(cid:2) GreenBridge(cid:2) PowerXS™ TinyBoost® CorePLUS(cid:2) Green FPS(cid:2) Programmable Active Droop(cid:2) TinyBuck® CorePOWER(cid:2) Green FPS(cid:2) e-Series(cid:2) QFET® TinyCalc(cid:2) CROSSVOLT(cid:2) Gmax(cid:2) QS(cid:2) TinyLogic® CTL(cid:2) GTO(cid:2) Quiet Series(cid:2) TINYOPTO(cid:2) Current Transfer Logic(cid:2) IntelliMAX(cid:2) RapidConfigure(cid:2) TinyPower(cid:2) DEUXPEED® ISOPLANAR(cid:2) (cid:2) TinyPWM(cid:2) Dual Cool™ Making Small Speakers Sound Louder TinyWire(cid:2) EcoSPARK® and Better™ Saving our world, 1mW/W/kWat a time™ TranSiC(cid:2) EfficientMax(cid:2) MegaBuck(cid:2) SignalWise(cid:2) TriFault Detect(cid:2) ESBC(cid:2) MICROCOUPLER(cid:2) SmartMax(cid:2) TRUECURRENT®* ® MicroFET(cid:2) SMART START(cid:2) (cid:3)SerDes(cid:2) MicroPak(cid:2) Solutions for Your Success(cid:2) FFFFFFFFaAPAAEaasiiCSCSTrrtccB(cid:2)TvTThhC®e® iiQll noddcur ®eShi e(cid:2)(cid:2)et m Siecroiensd(cid:2)uc tor® MMMmOOOPpPWioilclttTTeroiSoorOOHDnaPPLiMvrTaOieLvk(cid:2)arAe2G®x (cid:2)N(cid:2) (cid:2)ICA ®R ® SSSSSSSSuTuuPuuypnppppEMecereeAe®rFrrrSL FMSSEOTEOOTOHTT(cid:2)TTS(cid:2)(cid:2)®(cid:2)(cid:2) ® - 3--68 UUUVVVXCioSHlnstrli™XuCtFaaa(cid:2)E ®g Fl MTe R(cid:2)PaFlx uE(cid:2) sT(cid:2) (cid:2) * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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