Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D Z 1 9 7 December 2014 P FDZ197PZ Z P - P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET C h -20 V, -3.8 A, 64 mΩ a n n Features General Description e l (cid:132) Max r = 64 mΩ at V = -4.5 V, I = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench® process 1 DS(on) GS D . with state of the art "fine pitch" WLCSP packaging process, the 5 (cid:132) Max rDS(on) = 71 mΩ at VGS = -2.5 V, ID = -2.0 A FDZ197PZ minimizes both PCB space and r . This V DS(on) (cid:132) Max rDS(on) = 79 mΩ at VGS = -1.8 V, ID = -1.0 A advanced WLCSP MOSFET embodies a breakthrough in S packaging technology which enables the device to combine p (cid:132) Max rDS(on) = 95 mΩ at VGS = -1.5 V, ID = -1.0 A excellent thermal transfer characteristics, ultra-low profile ec (cid:132) Occupies only 1.5 mm2 of PCB area.Less than 50% of the packaging, low gate charge, and low rDS(on). if i area of 2 x 2 BGA e Applications d (cid:132) Ultra-thin package: less than 0.65 mm height when mounted P to PCB (cid:132) Battery management o w (cid:132) HBM ESD protection level > 4400V (Note3) (cid:132) Load switch e (cid:132) RoHS Compliant (cid:132) Battery protection rT r e n c PIN1 h ® S T h S G i n D S W L D - C S P M O TOP BOTTOM S F WL-CSP 1x1.5 Thin E T MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage ±8 V GS -Continuous T = 25°C (Note 1a) -3.8 I A A D -Pulsed -15 Power Dissipation T = 25°C (Note 1a) 1.9 P A W D Power Dissipation T = 25°C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 65 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 133 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 7 FDZ197PZ WL-CSP 1x1.5 Thin 7 ” 8 mm 5000 units ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDZ197PZ Rev.C3

Electrical Characteristics F T = 25 °C unless otherwise noted J D Z Symbol Parameter Test Conditions Min Typ Max Units 1 9 Off Characteristics 7 P BV Drain to Source Breakdown Voltage I = -250 µA, V = 0 V -20 V Z DSS D GS ∆BV Breakdown Voltage Temperature P ∆TDJSS Coefficient ID = -250 µA, referenced to 25 °C -10 mV/°C -C I Zero Gate Voltage Drain Current V = -16 V, V = 0 V -1 µA h DSS DS GS a I Gate to Source Leakage Current V = ±8 V, V = 0 V ±10 µA n GSS GS DS n e On Characteristics l 1 V Gate to Source Threshold Voltage V = V , I = -250 µA -0.4 -0.5 -1.0 V . GS(th) GS DS D 5 ∆VGS(th) Gate to Source Threshold Voltage I = -250 µA, referenced to 25 °C 2.7 mV/°C V ∆TJ Temperature Coefficient D S V = -4.5 V, I = -2.0 A 46 64 p GS D e VGS = -2.5 V, ID = -2.0 A 53 71 c i rDS(on) Static Drain to Source On Resistance VGS = -1.8 V, ID = -1.0 A 59 79 mΩ fie VGS = -1.5 V, ID = -1.0 A 68 95 d V = -4.5 V, I = -2.0 A, P TG S=125 °C D 54 84 o J w gFS Forward Transconductance VDD = -5 V, ID = -3.8 A 21 S e r T Dynamic Characteristics r e C Input Capacitance 1180 1570 pF n iss V = -10 V, V = 0 V, c C Output Capacitance DS GS 190 255 pF h oss f = 1 MHz ® Crss Reverse Transfer Capacitance 160 225 pF T h Switching Characteristics i n t Turn-On Delay Time 5.8 12 ns W d(on) tr Rise Time VDD = -10 V, ID = -3.8 A, 5.9 12 ns L- td(off) Turn-Off Delay Time VGS = -4.5 V, RGEN = 6 Ω 311 498 ns C S tf Fall Time 280 448 ns P Qg Total Gate Charge VGS = 0V to -4.5V 18 25 nC M V = -10 V, Q Gate to Source Charge DD 1.5 nC O gs I = -3.8 A Q Gate to Drain “Miller” Charge D 4.7 nC S gd F E Drain-Source Diode Characteristics T V Source to Drain Diode Forward Voltage V = 0 V, I = -1.1 A (Note 2) -0.6 -1.2 V SD GS S t Reverse Recovery Time 194 310 ns rr I = -3.8 A, di/dt = 100 A/µs Q Reverse Recovery Charge F 344 550 nC rr Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 65 °C/W when mounted on b. 133 °C/W when mounted on a a 1 in2 pad of 2 oz copper. minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDZ197PZ Rev.C3

F D T ypical Characteristics T = 25 °C unless otherwise noted Z J 1 9 7 15 2.5 P E Z , -IDRAIN CURRENT (A) D 1203690 VGSV =G S-V1 G=1.5 S- V 1V=.G 8-SV2 VG.=5S - V3= PDV-4UU.L5T SYVE C DY2UCRLEA T=I O0.N5 %= 8M0A µXs 3 NORMALIZEDDRAIN TO SOURCE ON-RESISTANC 0112....50500 PDUULTVSYGE CS DY=3UC -R1L.EA5 T =VI O0.NV5 G%=S 6 8 M=0 A -µ3Xs VVGS =9 -1.8 VVGSV =G 1S-42 =.5 - 2V.5 V 15 P-Channel 1.5 V Spec -VDS, DRAIN TO SO URCE VOLTAGE (V) -ID, DRAIN CURRENT (A) if i e Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance d vs Drain Current and Gate Voltage P o w 1.4 150 e ANCE IVDG =S -=2 -A4.5 V )mΩ ID = -2 A PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A µXs rTre NORMALIZED O SOURCE ON-RESIST 011...802 rDRAIN TO ,DS(on)(CE ON-RESISTANCE 1269000 TJ = 125 oC nch ThinW® RAIN T SOUR TJ = 25 oC L-C D 0.6 30 S -75 -50 -25 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 P TJ, JUNCTION TEM PERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) M O Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to S vs Junction Temperature Source Voltage F E T 15 20 PULSE DURATION = 80 µs A) 10 VGS = 0 V DUTY CYCLE = 0.5% MAX T ( 12 N E RRENT (A) 9 VDS = -5 V AIN CURR 1 TJ = 150 oC CU DR 0.1 TJ = 25 oC N 6 E RAI TJ = 150 oC TJ = 25 oC ERS -I, DD 3 TJ = -55 oC -I, REVS0.01 TJ = -55 oC 0 0.001 0.0 0.5 1.0 1.5 2.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SO URCE VOLTAGE (V) -VSD, BODY DIODE FO RWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDZ197PZ Rev.C3

F D Typical Characteristics T = 25 °C unless otherwise noted Z J 1 9 7 4.5 3000 P VOLTAGE (V)3.0 ID = -3.8 A VDD = -8 V CE (pF)1000 Ciss Z P-Ch RCE VDD = -10 V TAN an U CI n TO SO1.5 VDD = -12 V CAPA Coss el 1 E . T 5 A G V V, GS fV =G S1 =M 0H Vz Crss S -0.0 100 p 0 3 6 9 12 15 18 0.1 1 10 20 e c Qg, GATE CH ARGE (nC) -VDS, DRAIN TO SOU RCE VOLTAGE (V) i f i e Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain d to Source Voltage P o w 10 20 e 10 r T A) 100 µs r RENT ( NT (A) 1 ms enc ANCHE CUR 1 TJ = 125 oC TJ = 25 oC RAIN CURRE 1 TLIHMISIT AERDE BAY I SrD S(on) 1100 0m mss h Thin® -I, AVALAS -I, DD 0.1 STRTJAIθN J ==AG M2=L5 AE1 Xo 3PC 3RU oALCST/WEED 1D sC WL-C 0.1 0.01 S 0.01 0.1 1 10 100 1000 0.1 1 10 50 P tAV, TIME IN AVA LANCHE (ms) -VDS, DRAIN to SOU RCE VOLTAGE (V) M O Figure 9. Unclamped Inductive Figure 10. Forward Bias Safe S Switching Capability Operating Area F E T 10-2 200 NT (A) 10-3 VGS = 0 V WER (W) 100 SRIθNJAG =L E1 3P3U oLCS/WE URRE 10-4 T PO TA = 25 oC ATE LEAKAGE C 111000---765 TJ = 125 oC TJ = 25 oC PEAK TRANSIEN 10 , -IGg 10-8 , P()PK 1 10-9 0.5 0 3 6 9 12 15 10-4 10-3 10-2 10-1 1 10 100 1000 -VGS, GATE TO SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Gate Leakage Current vs Figure 12. Single Pulse Maximum Gate to Source Voltage Power Dissipation ©2009 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDZ197PZ Rev.C3

F Typical Characteristics D T = 25 °C unless otherwise noted J Z 1 9 7 2 P 1 DUTY CYCLE-DESCENDING ORDER Z P D = 0.5 AL 0.2 -C M A 0.1 h ERZJθ 0.05 a ORMALIZED TH IMPEDANCE, 0.1 00..0021 PDM t1t2 nnel 1.5 N SINGLE PULSE NOTES: V 0.01 RθJA = 133 oC/W DPEUATYK FTAJ C= TPODRM: xD Z =θ JtA1 /xt2 RθJA + TA Sp e 0.005 c 10-4 10-3 10-2 10-1 1 10 100 1000 i f t, RECTANGULAR PULSE DURATION (sec) ie d Figure 13. Transient Thermal Response Curve P o w e r T r e n c h ® T h i n W L - C S P M O S F E T ©2009 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDZ197PZ Rev.C3

F D Z Dimensional Outline and Pad Layout 1 9 7 P Z P - C h a n n e l 1 . 5 V S p e c i f i e d P o w e r T r e n c h ® T h i n W L - C S P M O S F E T Pin Definations: Gate Drain Source A1 C1, C2 A2, B1, B2 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_UCBAU-006 ©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FDZ197PZ Rev.C3

F D Z 1 9 7 P TRADEMARKS Z The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. P - AccuPower F-PFS OPTOPLANAR® C AttitudeEngine™ FRFET® ®* h Awinda® Global Power ResourceSM ® TinyBoost® a AX-CAP®* GreenBridge PowerTrench® TinyBuck® nn BitSiC Green FPS PowerXS™ TinyCalc e Build it Now Green FPS e-Series Programmable Active Droop TinyLogic® l CorePLUS Gmax QFET® TINYOPTO 1 . 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