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F D S 8 November 2008 8 1 7 N FDS8817NZ Z ® N N-Channel PowerTrench MOSFET - C 30V, 15A, 7.0mΩ h a n Features General Description n e (cid:132) Max rDS(on) = 7mΩ at VGS = 10V, ID = 15A TSheims icoNn-dCuhcatonrn’se l adMvOanScFeEdT Poisw erpTrroednucche®d pruosciensgs tFhaaitr chhailds l P (cid:132) Max r = 10mΩ at V = 4.5V, I =12.6A o DS(on) GS D been especially tailored to minimize the on-state resistance. w (cid:132) HBM ESD protection level of 3.8KV typical (note 3) e This device is well suited for Power Management and load r (cid:132) High performance trench technology for extremely low r T DS(on) switching applications common in Notebook Computers and r (cid:132) High power and current handling capability Portable Battery Packs. e n c (cid:132) RoHS compliant h ® M O S F E T D D D G D D D S G SO-8 S D S S S D S Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Note 1a) 15 I A D -Pulsed 60 E Single Pulse Avalanche Energy (Note 4) 181 mJ AS Power Dissipation (Note 1a) 2.5 P W D Power Dissipation (Note 1b) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC R Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction to Ambient (Note 1b) 125 θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS8817NZ FDS8817NZ 13” 12mm 2500 units ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS8817NZ Rev.C1

F D Electrical Characteristics S T = 25°C unless otherwise noted J 8 8 Symbol Parameter Test Conditions Min Typ Max Units 1 7 Off Characteristics N Z BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 30 V N ΔBV Breakdown Voltage Temperature - DSS I = 250μA, referenced to 25°C 20 mV/°C C ΔTJ Coefficient D h I Zero Gate Voltage Drain Current V = 24V, V = 0V 1 μA a DSS DS GS n I Gate to Source Leakage Current V = ±20V, V = 0V ±10 μA n GSS GS DS e l On Characteristics (Note 2) P o VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 1 1.8 3 V w ΔV Gate to Source Threshold Voltage e ΔTGJS(th) Temperature Coefficient ID = 250μA, referenced to 25°C –6 mV/°C rT r VGS = 10V, ID = 15A 5.4 7 e n rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 12.6A 7.0 10 mΩ c h V = 10V, I = 15A T = 125°C 7.5 11 GS D J ® gFS Forward Transconductance VDS = 5V, ID = 15A 54 S M O Dynamic Characteristics S C Input Capacitance 1805 2400 pF F iss V = 15V, V = 0V, E Coss Output Capacitance f =D S1MHz GS 335 445 pF T C Reverse Transfer Capacitance 200 300 pF rss R Gate Resistance f = 1MHz 1.4 Ω g Switching Characteristics t Turn-On Delay Time 11 22 ns d(on) V = 15V, I = 15A t Rise Time DD D 13 26 ns r V = 10V, R = 6Ω t Turn-Off Delay Time GS GEN 25 40 ns d(off) t Fall Time 7 14 ns f Qg Total Gate Charge VGS = 0V to 10V VDD = 15V 32 45 nC Qg Total Gate Charge VGS = 0V to 5V ID = 15A 17 24 nC Q Gate to Source Charge 6 nC gs Q Gate to Drain “Miller” Charge 7 nC gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage V = 0V, I = 2.1A (Note 2) 0.8 1.2 V SD GS S t Reverse Recovery Time 24 36 ns rr I = 15A, di/dt = 100A/μs Q Reverse Recovery Charge F 15 23 nC rr Notes: 1. RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 50°C/W when mounted on a b) 125°C/W when mounted on a 1in2 pad of 2 oz copper. minimum pad . 2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%. 3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied. 4. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V. FDS8817NZ Rev.C1 2 www.fairchildsemi.com

F D Typical Characteristics S TJ = 25°C unless otherwise noted 8 8 1 7 60 5 N NT (A) 45 VGVSG =SV 4 G=.S0 4V =.5 1V0.0V PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AμXs SISTANCE 4 VGS = 3.0V Z N-C RE VGS = 3.5V DRE VGS = 3.5V h AIN CUR 30 RMALIZERCE ON- 23 VGS = 4.0V annel DR NOOU P I, D 15 O S 1 VGS = 4.5V ow T VGS = 3.0V AIN PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AμXs VGS = 10.0V erT 00.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DR 00 15 30 45 60 re n VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A) c h Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance ® vs Drain Current and Gate Voltage M O 1.8 26 S NCE ID = 15A )Ω ID =7.5A PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AμXs FE STA 1.6 VGS = 10V mE ( 22 T NORMALIZED SOURCE ON-RESI 111...024 , DRAIN TO DS(on) E ON-RESISTANC 111048 TJ = 125oC O r C T 0.8 R 6 AIN SOU TJ = 25oC R 0.6 2 D -50 -25 0 25 50 75 100 125 150 3 4 5 6 7 8 9 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOUR CE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 60 100 PULSE DURATION = 80μs A) VGS = 0V 50 DUTY CYCLE = 0.5%MAX NT ( 10 NT (A) 40 VDD = 5V URRE RE N C 1 TJ = 150oC TJ = 25oC , DRAIN CUR D 123000 TJ = 150oC TJ = 25oC EVERSE DRAI 00.0.11 TJ = -55oC I R TJ = -55oC , S 0 I0.001 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDS8817NZ Rev.C1 3 www.fairchildsemi.com

F D Typical Characteristics S T = 25°C unless otherwise noted J 8 8 1 10 3000 7 V) ID = 15A N E( Z AG 8 Ciss N RCE VOLT 6 VDD = 10V VDD = 15V ANCE (pF) 1000 Coss -Chan TO SOU 4 VDD =20V APACIT Crss nel P GATE 2 C fV =G S1 M= H0zV owe , GS 0 100 rT V 0 5 10 15 20 25 30 35 0.1 1 10 30 r e Qg, GATE CH ARGE(nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) n c Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain h ® to Source Voltage M O 20 1E-3 S NT(A) 10 ENT(A) 1E-4 VGS = 0V FET RRE URR 1E-5 TJ = 150oC U C C TJ = 25oC E E G 1E-6 H A C K AN TJ = 125oC EA 1E-7 VAL TE L TJ = 25oC A A 1E-8 I, AS 1 I, Gg 1E-9 0.01 0.1 1 10 100 400 0 5 10 15 20 25 30 tAV, TIME IN AV ALANCHE(ms) VGS, GATE TO SOURCE VOLTAGE(V) Figure 9. Unclamped Inductive Figure 10. Gate Leakage Current vs Gate to Switching Capability Source Voltage 15 100 rDS(on) LIMITED 100us ENT (A) 12 VGS = 10V RENT (A) 10 1s R 9 R R U U C 1 10ms RAIN C 6 VGS = 4.5V DRAIN STJIN =G MLEA XP URLASTEED 11s00ms I, DD 3 I, D0.1 RTAθJ =A 2 =5 o1C25oC/W 1D0Cs RθJA = 50oC/W 0 0.01 25 50 75 100 125 150 0.01 0.1 1 10 100 T , AMBIENT TEMPERATURE (oC) VDS, DRAIN to SOURCE VOLTAGE (V) A Figure 11. Maximum Continuous Drain Figure 12. Forward Bias Safe Current vs Ambient Temperature Operating Area FDS8817NZ Rev.C1 4 www.fairchildsemi.com

F D Typical Characteristics S T = 25°C unless otherwise noted J 8 8 1 2000 7 N 1000 Z L VGS = 10V FAOBRO VTEE M25PoECR DAETURRATEES PEAK N A - D THERMNCE, ZJAθ 100 CUI =R RI2E5 NT A1--S--5-- -0F-1---O2-–--5-L--T--L-A--O--WS: Chann ALIZEPEDA 10 TA = 25oC el P RMIM o O SINGLE PULSE w N 1 R = 125oC/W e θJA r T r 0.2 e 10-4 10-3 10-2 10-1 1 10 102 103 n c t, RECTANGULAR PULSE DURATION (s) h ® Figure 13. Single Pulse Maximum Power Dissipation M O 2 S 1 DUTY CYCLE-DESCENDING ORDER F E L D = 0.5 T A 0.2 ERMZJAθ 0.1 00..105 PDM ED THANCE, 00..0021 t1 LIZED 0.01 t2 RMAIMP SINGLE PULSE NDOUTEYS :FACTOR: D = t1/t2 NO 0.001 RθJA = 125oC/W PEAK TJ = PDM x ZθJA x RθJA + TA 0.0002 10-4 10-3 10-2 10-1 1 10 102 103 t, RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve FDS8817NZ Rev.C1 5 www.fairchildsemi.com

F D S 8 8 1 7 N Z N TRADEMARKS - The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not C h intended to be an exhaustive list of all such trademarks. a Build it Now™ FRFET® Programmable Active Droop™ n CorePLUS™ Global Power ResourceSM QFET® n CorePOWER™ Green FPS™ QS™ tm e CROSSVOLT™ Green FPS™ e-Series™ Quiet Series™ TTiinnyyBBouocks™t™ l P CTL™ GTO™ RapidConfigure™ TinyLogic® o CEcuorrSePntA TRrKan®sfer Logic™ IISntOelPliMLAANXA™R™ ™ TTIinNyYPOoPwTeOr™™ we EEfZfiScWenItTMCaHx™™ * MMeICgRaBOuCcOk™UPLER™ SSamvainrtgM oauxr™ world, 1mW /W /kW at a time™ TinyPWM™ rT ™ MMiiccrrooFPEakT™™ SSMPMA®RT START™ TμSineyrWDieres™™ ren ® MillerDrive™ STEALTH™ c MotionMax™ SuperFET™ h Fairctmhild® Motion-SPM™ SuperSOT™-3 UHC® ® Fairchild Semiconductor® OPTOLOGIC® SuperSOT™-6 Ultra FRFET™ M FACT Quiet Series™ OPTOPLANAR® SuperSOT™-8 UniFET™ FACT® ® SupreMOS™ VCX™ O FAST® SyncFET™ VisualMax™ S FastvCore™ tm ® XS™ F FlashWriter® * PDP SPM™ E FPS™ Power-SPM™ The Power Franchise® T F-PFS™ PowerTrench® PowerXS™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. 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No Identification Needed Full Production Dmaatkaes hceheatn cgoenst aaitn asn fyin taiml sep wecitihfiocautti onnosti.c Fe atoir cimhilpdr oSveem thiceo nddeuscigtonr. reserves the right to Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37

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