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F D S 8 6 March 2011 1 4 0 FDS86140 N - ® C N-Channel PowerTrench MOSFET h a 100 V, 11.2 A, 9.8 mΩ n n Features General Description e l P (cid:132) Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A This N-Channel MOSFET is produced using Fairchild o (cid:132) Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has we (cid:132) High performance trench technologh for extremely low rDS(on) been optimized for rDS(on), switching performance and rT ruggedness. r (cid:132) High power and current handing capability in a widely used e n surface mount package Applications c h (cid:132) 100% UIL Tested ® (cid:132) DC/DC Converters and Off-Line UPS (cid:132) RoHS Compliant M (cid:132) Distributed Power Architectures and VRMs O (cid:132) Primary Swith for 24 V and 48 V Systems S F (cid:132) High Voltage Synchronous Rectifier E T D D D 5 4 G D D D 6 3 S D 7 2 S G SO-8 S D 8 1 S S Pin 1 S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous 11.2 I A D -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 264 mJ AS Power Dissipation T = 25 °C (Note 1) 5.0 P C W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS86140 FDS86140 SO-8 13’’ 12 mm 2500 units ©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS86140 Rev.C

F Electrical Characteristics T = 25 °C unless otherwise noted D J S Symbol Parameter Test Conditions Min Typ Max Units 8 6 Off Characteristics 1 4 0 BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V N Δ BΔVTDSS BCroeeaffkicdioewntn Voltage Temperature ID = 250 μA, referenced to 25 °C 70 mV/°C -C J h I Zero Gate Voltage Drain Current V = 80 V, V = 0 V 1 μA a DSS DS GS n IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA n e On Characteristics l P o V Gate to Source Threshold Voltage V = V , I = 250 μA 2 2.7 4 V GS(th) GS DS D w Δ ΔVTGJS(th) GTeamtep etor aStuoruer cCeo Tehffriceisehnotld Voltage ID = 250 μA, referenced to 25 °C -11 mV/°C erT VGS = 10 V, ID = 11.2 A 8.1 9.8 re V = 6 V, I = 9 A 10.8 16 n r Static Drain to Source On Resistance GS D mΩ c DS(on) V = 10 V, I = 11.2 A, h TG=S 125 °C D 13.1 17 ® J g Forward Transconductance V = 10 V, I = 11.2 A 35 S M FS DS D O Dynamic Characteristics S F C Input Capacitance 1940 2580 pF E iss V = 50 V, V = 0 V, T C Output Capacitance DS GS 440 585 pF oss f = 1 MHz C Reverse Transfer Capacitance 20 30 pF rss R Gate Resistance 0.9 Ω g Switching Characteristics t Turn-On Delay Time 13.7 25 ns d(on) tr Rise Time VDD = 50 V, ID = 11.2 A, 5.6 11 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 23 38 ns t Fall Time 4.8 10 ns f Q Total Gate Charge V = 0 V to 10 V 29 41 nC g GS Qg Total Gate Charge VGS = 0 V to 5 V VDD = 50 V, 16.5 23 nC Qgs Gate to Source Charge ID = 11.2 A 8.0 nC Q Gate to Drain “Miller” Charge 6.5 nC gd Drain-Source Diode Characteristics V = 0V, I = 11.2 A (Note 2) 0.8 1.3 VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.7 1.2 V GS S trr Reverse Recovery Time I = 11.2 A, di/dt = 100 A/μs 53 85 ns Q Reverse Recovery Charge F 59 94 nC rr NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a b) 125 °C/W when mounted on a 1 in2 pad of 2 oz copper. minimum pad. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 23 A, VDD = 90 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDS86140 Rev.C

F D Typical Characteristics S T = 25 °C unless otherwise noted J 8 6 1 4 50 4 0 VGS = 10 V E N C 40 VGS = 7 V AN VGS = 4.5 V -C NT (A) VGS = 6 V VGS = 5 V DRESIST 3 VGS = 5 V han I, DRAIN CURRE D 123000 PDUULTSYE C DYUCRLEA T=I O0.N5 %= V8MG0AS μX =s 4.5V NORMALIZERAIN TO SOURCE ON- 12 PDUULTSYE C DYUCRLEA T=I O0.N5 %=V 8GM0SA μ=Xs 6 V VGS = 10 VVGS = 7 V nel PowerTr 0 D 0 e n 0 1 2 3 4 0 10 20 30 40 50 c VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN CURR ENT (A) h® M Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance O vs Drain Current and Gate Voltage S F E T 2.0 50 E PULSE DURATION = 80 μs NORMALIZED TO SOURCE ON-RESISTANC 11111.....02468 IVDG =S 1=1 1.20 AV rDRAIN TO ,DS(on)()mURCE ON-RESISTANCE Ω 12340000 DIDU =T 1Y1 C.2Y ACLE = 0.5%T JM =A 1X25 oC N 0.8 O RAI S TJ = 25 oC D 0.6-75 -50 -25 0 25 50 75 100 125 150 04 5 6 7 8 9 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 50 100 PULSE DURATION = 80 μs A) VGS = 0 V DUTY CYCLE = 0.5% MAX T ( T (A) 40 VDS = 5 V URREN 10 TJ = 150 oC EN 30 N C 1 TJ = 25 oC URR TJ = 150 oC RAI C D RAIN 20 TJ = 25 oC ERSE 0.1 TJ = -55 oC D V , D 10 RE 0.01 I TJ = -55 oC I, S 0 0.001 2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDS86140 Rev.C

F D Typical Characteristics S T = 25 °C unless otherwise noted J 8 6 1 4 10 5000 0 E (V) ID = 11.2 A VDD = 50 V N- O SOURCE VOLTAG 468 VDD = 25 V VDD = 75 V PACITANCE (pF)1010000 CCoissss Channel Po E T CA w T 2 e GA f = 1 MHz r V, GS 0 10 VGS = 0 V Crss Tre 0 6 12 18 24 30 0.1 1 10 100 n c Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) h ® M Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain O to Source Voltage S F E 20 12 T A) ENT ( 10 TJ = 25 oC NT (A) 9 RR RE VGS = 10 V E CU TJ = 100 oC CUR 6 H N AVALANC TJ = 125 oC , IDRAID 3 VGS = 6 V , AS RθJA = 50 oC/W I 1 0 0.01 0.1 1 10 100 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TA, AMBIENT TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Ambient Temperature 80 2000 W) 1000 SINGLE PULSE 100us R ( RθJA = 125 oC/W T (A) 10 OWE TA = 25 oC AIN CURREN 1 TLIHMISIT AERDE BAY I SrD S(on) 1110 0m0 m smss RANSIENT P 10100 R T I, DD00.0.11 RSTTJAIθN J ==AG M2=L5 AE1 Xo 2PC 5RU oALCST/WEED 11D0 Cs s , PPEAK ()PK 0.15 0.01 0.1 1 10 100 500 10-4 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WI DTH (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation ©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDS86140 Rev.C

F D Typical Characteristics T = 25 °C unless otherwise noted S J 8 6 1 4 0 2 N DUTY CYCLE-DESCENDING ORDER 1 - C h L a A D = 0.5 n MALIZED THERM MPEDANCE,ZJAθ 0.00.11 00000.....21000521 PDM t1 nel Powe ORI t2 rT N SINGLE PULSE NOTES: r 0.001 RθJA = 125 oC/W DPEUATYK FTAJ C= TPODRM: xD Z =θ JtA1 /xt2 RθJA + TA enc 0.0005 h 10-4 10-3 10-2 10-1 1 10 100 1000 ® t, RECTANGULAR PULSE DURATION (sec) M O Figure 13. Junction-to-Ambient Transient Thermal Response Curve S F E T ©2011 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDS86140 Rev.C

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