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F D June 2003 S 6 9 9 0 A FDS6990A Dual N-Channel Logic Level PowerTrench(cid:210) MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced • 7.5 A, 30 V. R = 18 mW @ V = 10 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 23 mW @ V = 4.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain • Fast switching speed superior switching performance. • Low gate charge These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • High performance trench technology for extremely low R DS(ON) • High power and current handling capability DD1 5 4 DD1 DD2 6 Q1 3 DD2 7 2 SO-8 G1 S1G 8 Q2 1 G2 S S2 S Pin 1 SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS VGSS Gate-Source Voltage – 20 V ID Drain Current – Continuous (Note 1a) 7.5 A – Pulsed 20 PD Power Dissipation for Single Operation (Note 1a) 1.6 W (Note 1b) 1.0 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 (cid:176) C Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 (cid:176) C/W RqJC Thermal Resistance, Junction-to-Case (Note 1) 40 (cid:176) C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6990A FDS6990A 13’’ 12mm 2500 units (cid:211) 2003 Fairchild Semiconductor Corporation FDS6990A Rev D(W)

F D Electrical Characteristics T = 25°C unless otherwise noted S A 6 Symbol Parameter Test Conditions Min Typ Max Units 9 9 0 Off Characteristics A BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 m A 30 V D BVDSS Breakdown Voltage Temperature ID = 250 m A, Referenced to 25(cid:176) C 26 mV/(cid:176) C D T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 m A V = 24 V, V = 0 V, T = 55(cid:176) C 10 DS GS J IGSS Gate–Source Leakage VGS = – 20 V, VDS = 0 V – 100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 m A 1 1.9 3 V D VGS(th) Gate Threshold Voltage ID = 250 m A, Referenced to 25(cid:176) C –4 mV/(cid:176) C D T Temperature Coefficient J RDS(on) Static Drain–Source VGS = 10 V, ID = 7.5 A 11 18 mW On–Resistance V = 4.5 V, I = 6.5 A 13 23 GS D V = 10 V, I = 7.5 A,T = 125(cid:176) C 15 31 GS D J I On–State Drain Current V = 10 V, V = 5 V 20 A D(on) GS DS g Forward Transconductance V = 5 V, I = 7.5 A 33 S FS DS D Dynamic Characteristics Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 1235 pF C Output Capacitance f = 1.0 MHz 295 pF oss C Reverse Transfer Capacitance 120 pF rss RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.3 W Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDD = 15 V, ID = 1 A, 10 19 ns t Turn–On Rise Time V = 10 V, R = 6 W 5 10 ns r GS GEN t Turn–Off Delay Time 28 44 ns d(off) t Turn–Off Fall Time 10 19 ns f Qg Total Gate Charge VDS = 15 V, ID = 7.5 A, 12 17 nC Qgs Gate–Source Charge VGS = 5 V 3.5 nC Q Gate–Drain Charge 4.2 nC gd Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain–Source Diode Forward Current 1.3 A S VSD Drain–Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) 0.7 1.2 V Voltage t Diode Reverse Recovery Time I = 7.5 A, d /d = 100 A/µs 24 nS rr F iF t Q Diode Reverse Recovery Charge 13 nC rr Notes: 1.RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. a) 78°C/W when b) 125°C/W when c) 135°C/W when mounted on a mounted on a 0.5in2 mounted on a 0.02 minimum mounting pad. pad of 2 oz copper in2 pad of 2 oz copper Scale 1 : 1 on letter size paper Pulse Test: Pulse Width < 300m s, Duty Cycle < 2.0% FDS6990A Rev D(W)

F D Typical Characteristics S 6 9 20 2 9 VGS = 10.0V 3.5V 0 CE1.8 A 16 N RRENT (A) 12 4.5V 4.0V MALIZEDN-RESISTA1.6 VGS = 3.5V I, DRAIN CUD 48 3.0V R, NORDS(ON)AIN-SOURCE O11..24 4.0V 4.5V 5.0V 6.0V R 1 10.0V D 0 0.8 0 0.5 1 1.5 2 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.05 ANCE1.4 VGIDS == 71.05.A0V HM) 0.04 ID = 3.75A MALIZEDN-RESIST1.2 TANCE (O 0.03 R, NORDS(ON)RAIN-SOURCE O0.18 R, ON-RESISDS(ON)00..0012 TA = 25oC TA = 125oC D 0.6 0 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage. 20 100 16 VDS = 5V T (A) 10 VGS = 0V N T (A) RRE 1 TA = 125oC N U E 12 C CURR TA = 125oC RAIN 0.1 25oC I, DRAIN D 48 25oC -55oC I, REVERSE DS 00.0.0011 -55oC 0 0.0001 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6990A Rev D(W)

F D Typical Characteristics S 6 9 9 0 10 2000 A V) ID = 7.5A VDS = 10V 15V fV =G S1 = M 0H Vz E ( 8 1600 G CE VOLTA 6 20V ANCE (pF)1200 Ciss R T E-SOU 4 APACI 800 GAT C Coss V, GS 2 400 C rss 0 0 0 5 10 15 20 25 0 5 10 15 20 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 W) SINGLE PULSE RAIN CURRENT (A) 110 RDS(ON) LIMIT DC10s1s100m1s0ms1ms100m s K TRANSIENT POWER (234000 RqJTA A= = 1 2355°°CC/W I, DD 0.1 SRIqVNJAGG S=L = E1 31P50Uo.0CLV/SWE pk), PEA10 TA = 25oC P( 0.01 0 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. T 1 N NSIE D = 0.5 RqJA(t) = r(t) * RqJA TRACE 0.2 RqJA = 135oC/W ALIZED EFFECTIVE HERMAL RESISTAN 0.00.11 0.01.00.5002.01 P(TpJk )- TAt 1=t2 P * RqJA(t) RMT Duty Cycle, D = t1 / t2 O SINGLE PULSE N r(t), 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6990A Rev D(W)

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