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April 1999 F 1696SD A Dual N -C hannel leveL cigoL PowerTrench TM TEFSOM lareneG noitpircseD seruta eF These N-Channel Logic Level MOSFETs are 5.3 A, 3 0 V. R 09 0=.0 W @ V = 01V produced using Fairchild Semiconductor 's R NO(SD ) 04 1=.0 W @ V SG = 4.5 V . NO(SD ) SG advanced PowerTrench process that has been tsaF gnihctiwsdeeps . especially tailored to minimize the on-state resistance and yet maintain superior switching 1. 2e(gra hect awgoL C.n)lacipyt performance . ecna mhrgoifHrep tygolon hhccenter w oyllemert xreof These devices are well suited for low voltage R . and battery powered applications erehwwol )NO(SD in-line power loss and fast switching are .ytiliba pgancild ntanher rdrunec awhogpiH required. 32-TOS TOSrepuS TM 6- TOSrepuS TM 8- 8-OS 322-TOS 61-CIOS 2D 5 4 2D 1D SDF 1D 6 3 A1696 7 2 G2 2S 8 1 G1 SO-8 pin 1 1S sgnitaR mumixaM etulosbA T 52 = deton esiw rehto soselnu C A lobmyS retemaraP sgnitaR stinU V egatloV ecruoS-niarD 03 V SSD V egatloV ecruoS-etaG ± 02 V SSG ID suounitnoC - tnerruC niarD )a1 etoN( 5.3 A desluP - 41 P D noitapissiD rewoP noitarepO elgniS rof )1 etoN( 2 W noitapissiD rewoP noitarepO elgniS rof )a1 etoN( 6.1 )b1 etoN( 1 )c1 etoN( 9.0 T T, egnaR erutarepmeT egarotS dna gnitarepO 051 ot 55- C° J GTS SCITSIRETCARAHC LAMREHT R qAJ tneibmA-ot-noitcnuJ ,ecnatsiseR lamrehT a1 etoN( ) 87 W/C° R qCJ esaC-ot-noitcnuJ ,ecnatsiseR lamrehT )1 etoN( 04 W/C° © 1999 Fairchild Semiconductor Corporation 1696SDF A R ev .C

scitsiretcarahC lacirtcelE T ( 52 = ) deton esiwrehtOo sselnu C A lobmyS retemaraP snoitidnoC niM pyT xaM stinU SCITSIR EFTFCOARAHC VB egatloV nwodkaerB ecruoS-niarD V I ,V 0 = = Aµ 052 03 V SSD SG D D VB /D T tneiciffeoC .pmeT egatloV nwodkaerB I = Aµ 052 52 ot decnerefeR , oC 52 /Vm oC SSD J D I tnerruC niarD egatloV etaG oreZ V 42 = ,V V V 0 = 1 µ A SSD SD SG T 5 = C°5 01 µ A J I drawroF ,egakaeL ydoB - etaG V ,V 02 = V V 0 = 001 An FSSG SG SD I esreveR ,egakaeL ydoB - etaG V ,V 02- = V V 0 = 001- An RSSG SG SD SCITSIRETCARAHC NO 2 etoN( ) V egatloV dlohserhT etaG V V = I , 052 = µ A 1 8.1 3 V SG )ht( SD SG D D V /D T egatloV dlohserhT etaG tneiciffeoC .pmeT I = Aµ 052 52 ot decnerefeR , oC 5- /Vm oC )ht(SG J D R ecnatsiseR-nO ecruoS-niarD citatS V = ,V 01 I 5.3 = A 670.0 90.0 W )NO(SD SG D T 21= C°5 11.0 551.0 J V 5.4 = ,V I = 8.2 A 701.0 41.0 SG D I tnerruC niarD etatS-nO V 01 = V ,V V 5 = 41 A )NO(D SG SD g ecnatcudnocsnarT drawroF V 51 = I ,V 5.3 = A 6 S SF SD D CIMANYD SCITSIRETCARAHC C ecnaticapaC tupnI V 51 = V ,V ,V 0 = 022 Fp ssi SD SG zHM 0.1 = f C ecnaticapaC tuptuO 05 Fp sso C ecnaticapaC refsnarT esreveR 02 Fp ssr HC GNIHCTIWS SCITSIRETCARA )2 etoN( t emiT yaleD nO - nruT V 51 = ,V I 1 = A 3 6 sn no(D ) SD D tr emiT esiR nO - nruT V SG 01 = V R , NEG = 6 W 11 22 sn t emiT yaleD ffO - nruT 7 41 sn )ffo(D t emiT llaF ffO - nruT 3 6 sn f Q egrahC etaG latoT V 51 = I ,V 3 = 5. ,A 1.2 4 Cn g SD D Q egrahC ecruoS-etaG V V 5 = 8.0 Cn sg SG Q egrahC niarD-etaG 7.0 Cn dg SGNITAR MUMIXAM DNA SCITSIRETCARAHC EDOID ECRUOS-NIARD I tnerruC drawroF edoiD ecruoS-niarD suounitnoC mumixaM 3.1 A S V DS egatloV drawroF edoiD ecruoS-niarD V SG I ,V 0 = S3.1 = A 2 etoN( ) 37.0 2.1 V :setoN 1. R si eht mus fo eht esac-ot-noitcnuj dna tneibma-ot-esac lamreht ecnatsiser erehw eht esac lamreht ecnerefer si denifed sa eht redlos gnitnuom ecafrus fo eht niard.snip R is qJA qJC deetnaraug R leihw gnised yb .ngised draob s'resu eht yb denimreted si qCA a87 . OC/Wo n 5.0 a ni 2 b21 . 5OC/Wo n 20.0 a ni 2 31 .c 5OC/Wo n am inimum zo2 fo dap copper. fo dap zo2 copper. .dap gnitnuom repap ezis rettel no 1 : 1 elacS .2 htdiW esluP :tseT esluP <µ003 elcyC ytuD ,s <.%0.2 1696SDF A R ev .C

scitsiretcarahC lacirtcelE lacipyT 51 5.2 V = 10V GS 6.0V 21 4.5V 2 V = 3.5V GS 4.0 V 9 4.0V 5.1 4.5 V 5.0V 6 3.5V 6.0V 10V DS(ON) 1 3 R , NORMALIZED 3.0V I , DRAIN-SOURCE CURRENT (A)D DRAIN-SOURCE ON-RESISTANCE 0 5.0 0 1 2 3 4 5 0 3 6 9 21 51 )V( EGATLOV ECRUOS-NIARD , V DS )A( TNERRUC NIARD , ID Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 3.0 I = 3.5AD I =3.5A D V = 10V 1.4 GS 42.0 1.2 81.0 C°52 1 1 21.0 DS(ON) 0.8 60.0 C°5 2 R , NORMALIZED DS(ON) DRAIN-SOURCE ON-RESISTANCE 0.6 R , ON-RESISTANCE (OHM) 0 05- 52- 0 52 05 57 001 521 051 2 4 6 8 01 )C°( ERUTAREPMET NOITCNUJ , TJ )V (EGATLO VECRUO SO TE TV A G, SG Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage. 8 01 V0.5 =V DS CT° 5 5=-J V =V0 SG C°52 6 1 T = 125°CJ C°521 25°C 4 1.0 -55°C 2 10.0 I , DRAIN CURRENT (A)D I , REVERSE DRAIN CURRENT (A)S 0 100.0 1 2 3 4 5 2.0 4.0 6.0 8.0 1 2.1 V )E VG(AT LEOC V R EU OTO,TASG GS )V( EGATLOV DRAWROF EDOID YDOB , V DS Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 1696SDF A R ev .C

scitsiretcarahC lacirtcelE lacipyT 01 005 I = 3.5AD V = 5VSD 8 002 C ssi 10V 15V 001 6 05 C sso 4 CAPACITANCE (pF) zH M 1 = f 2 02 V 0 V = GS C rss GS 01 V , GATE-SOURCE VOLTAGE (V) 0 0.1 0.2 0.5 1 2 5 01 03 0 1 2 3 4 )V( EGATLOV ECRUOS OT NIARD , V SD )Cn( EGRAHC ETAG , Q g Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 03 su001 03 01 sm1 52 ESLUP ELGNIS 5 TIMIL )NO(SDR sm01 W/C° 531= R qJAC°52 = T A 2 sm001 02 1 1s 5.0 s01 51 CD V01 =V SG POWER (W) 01 1.0 ESLUP ELGNIS I , DRAIN CURRENT (A)D50.0 W/C°531 = R qCJ°A5 2 =T A A 5 10.0 0 1.0 2.0 5.0 1 2 5 01 03 05 10.0 1.0 5.0 01 05 001 003 )V( EGATLOV ECRUOS-NIARD , V SD )CES( EMIT ESLUP ELGNIS Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 5.0 D 5=.0 2.0 2.0 R * )t(r = )t( R qJA qJA 1.0 1.0 W/C °531= R qJA 50.0 0.05 P(pk) 0.02 20.0 0.01 t 1 10.0 Single Pulse t 2 500.0 )t( R * P = T - TJ A qAJ t/ t = D ,elcyC ytuD 1 2 r(t), NORMALIZED EFFECTIVE 200.0 TRANSIENT THERMAL RESISTANCE 100.0 1000.0 100.0 10.0 1.0 1 01 001 003 )ces( EMIT , t1 Figure 11. Transient Thermal Response Curve. n ni debircsed snoitidnoc eht gnisu demrofrep noitaziretcarahc lamrehT .c1 eto .ngised draob tiucric eht no gnidneped egnahc lliw esnopser lamreht tneisnarT 1696SDF A R ev .C

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