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Octobe r 1998 F 396SD 0 A lauD C -N hannel, Logic Level, PowerTrench TM MOSFET lareneG noitpircseD serutae F esehT lennahC-N cigoL leveL sTEFSOM era 5.5 3 ,A R .V 0 040.0 = W @ V V 01 = produced using Fairchild Semiconductor s' R NO(SD 550.0 = ) W @ V GSV 5.4 = . NO(SD ) GS decnavda hcnerTrewoP ssecorp taht sahneeb deeps gnihctiws tsaF . especially tailored to minimize the on-state 5 lacipyt( egrahc etag woL .)Cn resistance and yet maintain superior switching ecnamrofrep . t ecnamrofrep hgiH ygolonhcet hcner wol ylemertxe rof es esheTcive dera lle wdetius rof wo legatlovdna R . )NO(SD yrettab derewop snoitacilppa erehw wolenil-ni .ytilibapac gnildnah tnerruc dna rewop hgiH rewop ssol dna tgsnaifhctiws e.rdaeriuqer SOT-23 SuperSOT TM-6 SuperSOT TM-8 8-OS SOT-223 SOIC-16 2D 5 4 2D 1D 1D SDF 6 3 A0396 7 2 2G S2 1G 8 1 8-OS nip 1 S1 sgnitaR mumixaM etulosbA T 52 = deton esiwrehto soselnu C A lobmyS retemaraP F 396SD 0 A stinU V egatloV ecruoS-niarD 03 V SSD V egatloV ecruoS-etaG ± 02 V SSG I suounitnoC - tnerruC niarD )a1 etoN( 5.5 A D desluP - 2 0 P noitarepO lauD rof noitapissiD rewoP )1 etoN( 2 W D noitapissiD rewoP noitarepO elgniS rof )a1 etoN( 6.1 W )b1 etoN( 1 )c1 etoN( 9.0 T T, egnaR erutarepmeT egarotS dna gnitarepO 051 ot 55- C° J GTS SCITSIRETCARAHC LAMREHT R qAJ tneibmA-ot-noitcnuJ ,ecnatsiseR lamrehT a1 etoN( ) 87 W/C° R qCJ esaC-ot-noitcnuJ ,ecnatsiseR lamrehT )1 etoN( 04 W/C° © 1998 Fairchild Semiconductor Corporation 396SDF 0A D.veR

scitsiretcarahC lacirtcelE ( T 52 = ) deton esiwrehOto sselnu C A lobmyS retemaraP snoitidnoC niM pyT xaM stinU SCITSIRETCARAHC FFO VB egatloV nwodkaerB ecruoS-niarD V I ,V 0 = = Aµ 052 03 V SSD SG D D VB /D T tneiciffeoC .pmeT egatloV nwodkaerB I = Aµ 052 52 ot decnerefeR , oC 02 /Vm o C SSD J D I tnerruC niarD egatloV etaG oreZ V 42 = ,V V V 0 = 1 µ A SSD SD SG T 5 = C°5 01 µ A J I drawroF ,egakaeL ydoB - etaG V ,V 02 = V V 0 = 001 An FSSG SG SD I esreveR ,egakaeL ydoB - etaG V ,V 02- = V V 0 = 001- An RSSG SG SD SCITSIRETCARAHC NO 2 etoN( ) V egatloV dlohserhT etaG V V = I , 052 = µ A 1 5.1 3 V SG )ht( SD SG D D V /D T egatloV dlohserhT etaG tneiciffeoC .pmeT I = Aµ 052 52 ot decnerefeR , oC 4- /Vm o C )ht(SG J D R ecnatsiseR-nO ecruoS-niarD citatS V = ,V 01 I 5.5 = A 230.0 40.0 W )NO(SD SG D T 21= C°5 840.0 860.0 J V 5.4 = ,V I = 8.4 A 440.0 550.0 SG D I tnerruC niarD etatS-nO V 01 = V ,V V 5 = 02 A )NO(D SG SD g ecnatcudnocsnarT drawroF V 51 = I ,V 5.5 = A 21 S SF SD D CIMANYD SCITSIRETCARAHC C ecnaticapaC tupnI V 51 = V ,V ,V 0 = 064 Fp ssi SD SG zHM 0.1 = f C ecnaticapaC tuptuO 511 Fp sso C ecnaticapaC refsnarT esreveR 54 Fp ssr HC GNIHCTIWS SCITSIRETCARA )2 etoN( t emiT yaleD nO - nruT V 51 = ,V I 1 = A 5 11 sn no(D ) SD D t emiT esiR nO - nruT V 01 = V R , = 6 W 8 71 sn r SG NEG t emiT yaleD ffO - nruT 71 82 sn )ffo(D t emiT llaF ffO - nruT 31 42 sn f Q egrahC etaG latoT V 5 = I ,V 5.5 = ,A 5 7 Cn g SD D Q egrahC ecruoS-etaG V V 5 = 2 Cn sg SG Q egrahC niarD-etaG 9.0 Cn dg SGNITAR MUMIXAM DNA SCITSIRETCARAHC EDOID ECRUOS-NIARD I tnerruC drawroF edoiD ecruoS-niarD suounitnoC mumixaM 3.1 A S V DS egatloV drawroF edoiD ecruoS-niarD V SG I ,V 0 = S3.1 = A 2 e toN( ) 2.1 V No tes: 1. R eht sa denifed si ecnerefer lamreht esac eht erehw ecnatsiser lamreht tneibma-ot-esac dna esac-ot-noitcnuj eht fo mus eht si .snip niard eht fo ecafrus gnitnuom redlos R deetnaraug si yb qAJ qJC R elihw ngised .ngised draob s'resu eht yb denimreted si qAC a87 . O no W/C 5.0 a ni 2 b21 . 5O no W/C 20.0 a ni 2 31 .c 5O no W/C 300.0 a ni 2 pado f2 oz .reppoc pado f 2 oz .reppoc pado f2 oz .reppoc repap ezis rettel no 1 : 1 elacS .2 htdiW esluP :tseT esluP <µ003 elcyC ytuD ,s < .%0.2 396SDF 0A D.veR

scitsiret claarcaih rCltacceilpEyT 03 4 V =10V SG 6.0V 5.0V 42 4.5V V = 3.0V GS 3 4.0V 81 3.5 V 2 3.5V 0.4V 21 4.5 V 5.5 V 3.0V DS(ON) 1 10V 6 R , NORMALIZED I , DRAIN-SOURCE CURRENT (A)D DRAIN-SOURCE ON-RESISTANCE 0 0 0 1 2 3 4 5 0 6 21 81 42 03 )V( EGATLOV ECRUOS-NIARD , V SD )A( TNERRUC NIARD , ID Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 6.1 2.0 A5. 2 =I I = 5.5AD D 4.1 V = 10V SG 51.0 2.1 1.0 1 C°52 1 50.0 R , NORMALIZEDDS(ON) 8.0 C°5 2 DS(ON) DRAIN-SOURCE ON-RESISTANCE 6.0 R , ON-RESISTANCE (OHM) 0 05- 52- 0 52 05 57 001 521 051 2 4 6 8 01 )C°( ERUTAREPMET NOITCNUJ , TJ )V( EGATLOV ECRUOS OT ETAG , V GS Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage. 15 02 V =5.0V DS V = 0V SG T = -55°CJ 12 25°C T = 125°C J 1 125°C 9 25°C 1.0 6 C°5 5- 10.0 I , DRAIN CURRENT (A)D 3 I , REVERSE DRAIN CURRENT (A)S 0 100.0 1 2 3 4 5 0 2.0 4.0 6.0 8.0 1 2.1 4.1 )V( EGATLOV ECRUOS OT ETAG , V GS )V( EGATLOV DRAWROF EDOID YDOB , V DS Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 396SDF 0A D.veR

scitsiret claarcaih rCltacceilpEyT 01 0001 I = 5.5AD V V=5 SD 8 V01 005 C ssi V51 6 002 C oss 001 4 2 CAPACITANCE (pF) 05 f = z1HM C ssr V V0= SG V , GATE-SOURCE VOLTAGE (V)GS 0 0 2 4 6 8 01 1.0 2.0 5.0 1 2 5 01 03 )Cn( EGRAHC ETAG , Q g )V( EGATLOV ECRUOS OT NIARD , V DS Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 001 03 05 SINGLE PULSE 100us 52 R =135 °C/W qAJ 01 1ms T = 25°C A LIMITRDS(ON) 10ms 02 2 100ms 51 5.0 1s 10s V =10V GS CD POWER (W) 01 SINGLE PULSE I , DRAIN CURRENT (A)D50.0 R =135°C/W qAJ 5 T =25°C AA 10.0 1.0 5.0 1 2 5 01 03 05 010.0 1.0 5.0 01 05 001 003 )V( EGATLOV ECRUOS-NIARD , V SD )CES( EMIT ESLUP ELGNIS Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 5.0 D=0 .5 2.0 0 . 2 R (t) = r(t) * R qAJ qJA 1.0 0 .1 = R 1 35°C /W qAJ 50.0 0.0 5 P(pk) 0.0 2 1200..00 0.0 1 elgniS esluP t 1 t 2 500.0 T- T = P * R ( t)J A qAJ Duty Cycle, D = t /t 1 2 r(t), NORMALIZED EFFECTIVE 200.0 TRANSIENT THERMAL RESISTANCE 100.0 1000.0 100.0 10.0 1.0 1 01 001 003 )ces( EMIT , t1 Figure 11. Transient Thermal Response Curve. N ni debircsed snoitidnoc eht gnisu demrofrep noitaziretcarahc lamrehT 1c. ote .ngised draob tiucric eht no gnidneped egnahc lliw esnopser lamreht tneisnarT 396SDF 0A D.veR

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