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F D March 2005 S 6 6 7 9 FDS6679 30 Volt P-Channel PowerTrench® MOSFET General Description Features This P-Channel MOSFET has been designed • –13 A, –30 V. R = 9 mΩ @ V = –10 V specifically to improve the overall efficiency of DC/DC DS(ON) GS R = 13 mΩ @ V = – 4.5 V converters using either synchronous or conventional DS(ON) GS switching PWM controllers, and battery chargers. • Extended V range (±25V) for battery applications GSS These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • High performance trench technology for extremely R specifications. DS(ON) low R DS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power • High power and current handling capability supply designs with higher overall efficiency. D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS VGSS Gate-Source Voltage ±25 V ID Drain Current – Continuous (Note 1a) –13 A – Pulsed –50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6679 FDS6679 13’’ 12mm 2500 units FDS6679 Rev C1 (W) ©2005 Fairchild Semiconductor Corporation

F D Electrical Characteristics T = 25°C unless otherwise noted S A 6 Symbol Parameter Test Conditions Min Typ Max Units 6 7 9 Off Characteristics BV Drain–Source Breakdown Voltage V = 0 V, I = –250 µA –30 V DSS GS D ∆BVDSS Breakdown Voltage Temperature I = –250 µA, Referenced to 25°C –23 mV/°C ∆T Coefficient D J I Zero Gate Voltage Drain Current V = –24 V, V = 0 V –1 µA DSS DS GS I Gate–Body Leakage V = ±25 V, V = 0 V ±100 nA GSS GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = –250 µA –1 –1.6 –3 V GS(th) DS GS D ∆VGS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C 5 mV/°C ∆T Temperature Coefficient J RDS(on) Static Drain–Source VGS = –10 V, ID = –13 A 7.3 9 mΩ On–Resistance VGS = –4.5 V, ID = –11 A 10 13 V =–10 V, I =–13 A, T=125°C 9.5 13 GS D J I On–State Drain Current V = –10 V, V = –5 V –50 A D(on) GS DS g Forward Transconductance V = –5 V, I = –13 A 44 S FS DS D Dynamic Characteristics Ciss Input Capacitance VDS = –15 V, V GS = 0 V, 3939 pF C Output Capacitance f = 1.0 MHz 972 pF oss C Reverse Transfer Capacitance 498 pF rss Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDD = –15 V, ID = –1 A, 19 34 ns tr Turn–On Rise Time VGS = –10 V, RGEN = 6 Ω 10 20 ns t Turn–Off Delay Time 110 176 ns d(off) t Turn–Off Fall Time 65 104 ns f Qg Total Gate Charge VDS = –15 V, ID = –13 A, 71 100 nC Qgs Gate–Source Charge VGS = –10 V 12 nC Q Gate–Drain Charge 15 nC gd Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain–Source Diode Forward Current –2.1 A S Drain–Source Diode Forward VSD Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.7 –1.2 V Notes: 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of θJA the drain pins. R is guaranteed by design while R is determined by the user's board design. θJC θCA a) 50°C/W (10 sec) b) 105°C/W when c) 125°C/W when mounted on a 62.5°C/W steady state mounted on a .04 in2 minimum pad. when mounted on a pad of 2 oz copper 1in2 pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6679 Rev C1 (W)

F D Typical Characteristics S 6 6 7 9 50 3 -I, DRAIN CURRENT (A)D12340000 V--G64S.. 05=VV -10V -4.-03V.5V -3.0V R, NORMALIZEDDS(ON)N-SOURCE ON-RESISTANCE1122....4826 VGS = -3.0 V-3.5V -4.0V -4.5V -5.0V -6.0V -2.5V RAI 1 -10V D 0 0.6 0 0.5 1 1.5 2 0 10 20 30 40 50 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.04 NCE VIGDS = = - 1-130AV M) ID = -7.0A A1.4 H MALIZEDN-RESIST1.2 TANCE (O 0.03 TA = 125oC NORCE O ESIS 0.02 R, DS(ON)DRAIN-SOUR0.81 R, ON-RDS(ON)0.01 TA = 25oC 0.6 0 -50 -25 0 25 50 75 100 125 150 175 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage. 50 100 VDS = -5.0V A) VGS = 0V RRENT (A) 3400 N CURRENT ( 101 TA = 125oC 25oC AIN CU 20 E DRAI 0.1 -55oC -I, DRD10 TA = -125oC25oC REVERS 0.00.0011 -55oC -I, S 0 0.0001 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6679 Rev C1 (W)

F D Typical Characteristics S 6 6 7 9 10 6000 V) ID = -13A VDS = -5V -10V f = 1 MHz GE ( 8 5000 VGS = 0 V E VOLTA 6 -15V CE (pF)4000 CISS C N R A3000 U T SO 4 ACI TE- AP2000 A C -V, GGS 2 1000 CCROSSSS 0 0 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 A) 10 RDS(ON) LIMIT 10m1sms100µs WER (W)40 SRIθNJTAG A=L = E1 22 P55U°°CCL/SWE CURRENT ( 1 DC10s1s100ms NSIENT PO30 AIN TRA20 -I, DRD 0.1 SRIθNVJTAGG A=SL = E=1 2 2-P551Uoo0CCLV/SWE P(pk), PEAK 10 0.01 0 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. CE 1 ECTIVE SISTAN D =0 .02.5 RRθJθAJ(At )= = 1 r2(5t)o *C R/WθJA FFRE 0.1 0.1 D EAL 0.05 EM P(pk) ALIZHER 0.00.201 t1 r(t), NORMANSIENT T 0.01 SINGLE PULSE DTuJt y- TCAy c=l ePt,2 D* R =θ JtA1 (/t )t2 R 0.001 T 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6679 Rev C1 (W)

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