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F D S 6 6 March 2009 7 FDS6675BZ 5 B P-Channel PowerTrench® MOSFET Z tm P -30V, -11A, 13mΩ - C h General Description Features a n This P-Channel MOSFET is producted using Fairchild (cid:132) Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A n Semiconductor’s advanced PowerTrench process that has e been especially tailored to minimize the on-state (cid:132) Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A l P resistance. (cid:132) Extended V range (-25V) for battery applications o GS This device is well suited for Power Management and load w switching applications common in Notebook Computers (cid:132) HBM ESD protection level of 5.4 KV typical (note 3) e r and Portable Battery Packs. (cid:132) High performance trench technology for extremely low T rDS(on) re n (cid:132) High power and current handing capability c h (cid:132) RoHS Compliant ® M O S D F D 5 4 E D T D 6 3 7 2 G S S 8 1 SO-8 S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Note 1a) -11 I A D -Pulsed -55 Power Dissipation for Single Operation (Note 1a) 2.5 P (Note 1b) 1.2 W D (Note 1c) 1.0 T , T Operating and Storage Temperature -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance , Junction to Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6675BZ FDS6675BZ 13’’ 12mm 2500 units ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS6675BZ Rev. B2

Electrical Characteristics F TJ = 25°C unless otherwise noted D S Symbol Parameter Test Conditions Min Typ Max Units 6 Off Characteristics 6 7 B Drain to Source Breakdown Voltage I = -250µA, V = 0V -30 V 5 VDSS D GS B ∆B Breakdown Voltage Temperature I = -250µA, referenced to VDSS D -20 mV/°C Z ∆TJ Coefficient 25°C P I Zero Gate Voltage Drain Current V = -24V, V = 0V -1 µA DSS DS GS - C I Gate to Source Leakage Current V = ±25V, V = 0V ±10 µA GSS GS DS h a On Characteristics (Note 2) n V Gate to Source Threshold Voltage V = V , I = -250µA -1 -2 -3 V n GS(th) GS DS D e ∆VGS(th) Gate to Source Threshold Voltage ID = -250µA, referenced to 15.7 mV/°C l ∆T Temperature Coefficient 25°C P J V = -10V , I = -11A 10.8 13.0 o GS D w V = -4.5V, I = -9A 17.4 21.8 r Drain to Source On Resistance GS D mΩ e DS(on) V = -10V, I = -11A r TG =S 125oC D 15.0 18.8 T J r g Forward Transconductance V = -5V, I = -11A 34 S e FS DS D n c Dynamic Characteristics h ® C Input Capacitance 1855 2470 pF Ciss Output Capacitance VDS = -15V, VGS = 0V, 335 450 pF M oss f = 1MHz O C Reverse Transfer Capacitance 330 500 pF rss S Switching Characteristics (Note 2) F E t Turn-On Delay Time 3.0 10 ns T d(on) V = -15V, I = -11A t Rise Time DD D 7.8 16 ns r V = -10V, R = 6Ω t Turn-Off Delay Time GS GS 120 200 ns d(off) t Fall Time 60 100 ns f V = -15V, V = -10V, Q Total Gate Charge DS GS 44 62 nC g I = -11A D Q Total Gate Charge 25 35 nC g V = -15V, V = -5V, Q Gate to Source Gate Charge DS GS 7.2 nC gs I = -11A D Q Gate to Drain Charge 11.4 nC gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage V = 0V, I = -2.1A -0.7 -1.2 V SD GS S t Reverse Recovery Time I = -11A, di/dt = 100A/µs 42 ns rr F Q Reverse Recovery Charge I = -11A, di/dt = 100A/µs 30 nC rr F Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 50°C/W when b)105°C/W when c) 125°C/W when mounted on a 1 in2 mounted on a .04 in2 m ounted on a pad of 2 oz copper minimun pad pad of 2 oz copper Scale 1 : 1 on letter size paper 2: Pulse Test:Pulse Width <300 us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDS6675BZ Rev.B2

F Typical Characteristics T = 25°C unless otherwise noted D J S 6 6 60 E 4.0 7 50 VGS = - 10V PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AµXs TANC 3.5 VGS = - 3.5V PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AµXs 5B URRENT (A) 3400 VGSV =G S- 4=. 5-V 5V VGS = - 4V ALIZEDE ON-RESIS 23..50 VGS = - 4V VGS = - 4.5V Z P-Ch -I, DRAIN CD 1200 VGS = - 3.5V VGS = - 3V NORMAIN TO SOURC 112...050 VGS V=G -S 1 =0 V- 5V annel P 0 DR 0.5 o 0 1 2 3 4 0 10 20 30 40 50 60 w -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A) e r T Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain r Current and Gate Voltage e n c h E 1.6 50 ® NC ID = -11A ID = -11A PULSE DURATION = 80µs M NORMALIZEDN TO SOURCE ON-RESISTA 0111....8024 VGS = -10V r, DRAIN TO SOURCE DS(on)ON-RESISTANCE m()Ω 12340000 DUTTYJ CT=J Y2 =C5 o1LC5E0 o=C 0.5%MAX OSFET AI DR 0.6-80 -40 0 40 80 120 160 03.0 4.5 6.0 7.5 9.0 10 TJ, JUNCTION TEM PERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Figure 4. On-Resistance vs Gate to Source Temperature Voltage 60 100 NT (A) 50 PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AµXs RENT (A) 10 VGS = 0V RE 40 UR TJ = 150oC R C 1 U N DRAIN C 2300 TJ = 150oC SE DRAI 0.1 TJ = 25oC -I, D10 TJ = 25oC EVER 0.01 TJ = -55oC R 0 TJ = -55oC -I, S1E-3 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDS6675BZ Rev.B2

F Typical Characteristics T = 25°C unless otherwise noted D J S 6 6 10 4000 V) 7 GE( Ciss 5B A 8 T F) Z L p RCE VO 6 VDD = -10V VDD = -15V ANCE ( 1000 Coss P-C OU CIT h E TO S 4 VDD = -20V CAPA Crss ann , GATS 2 fV =GS 1 =M 0HVz el P VG 0 100 o - 0 10 20 30 40 50 0.1 1 10 30 w Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) e r T Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage r e n c 1000 A) 20 h T( ® 100 N RE 10 M 10 TJ = 150oC UR O uA) 1 HE C TJ = 25oC SF -I(g 0.1 ANC ET 0.01 TJ = 25oC VAL TJ = 125oC A , S 1E-3 -IA 1E-4 1 0 5 10 15 20 25 30 35 10-2 10-1 100 101 102 -VGS(V) tAV, TIME IN AVALANCHE(ms) Figure 9. I vs V Figure 10. Unclamped Inductive Switching g GS Capability 12 100 100 us 10 A) NT ( 8 VGS = -10V T (A) 10 1 ms E N R E R R 10 ms RAIN CU 46 VGS = -4.5V RAIN CUR 1 TLSIHIMNISIGT LAEERD E PBAUY LI SrSD ES(on) 110 s0 ms -I, DD 2 I, DD 0.1 TRJθ J=A M= A1X2 5R oACT/WED 1D0C s TA = 25 oC 0 0.01 25 50 75 100 125 150 0.01 0.1 1 10 100200 TA, AMBIENT TEMPERATURE(oC) VDS, DRAIN to SOU RCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Figure 12. Forward Bias Safe Operating Area Ambient Temperature ©2009 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDS6675BZ Rev.B2

F Typical Characteristics T = 25°C unless otherwise noted D J S 6 6 104 7 W) 5B ER ( 103 VGS = -10 V Z W O P P ENT 102 -C SI h AN a R SINGLE PULSE n T PEAK 10 RTAθJ =A 2=5 1 o2C5 oC/W nel , )PK 1 P P( 0.5 o 10-4 10-3 10-2 10-1 1 10 102 103 w t, PULSE WIDTH (sec) e r T Figure 13. Single Pulse Maximum Power Dissipation r e n c h 2 ® 1 DUTY CYCLE-DESCENDING ORDER M O L D = 0.5 MA A10-1 0.2 S LIZED THER EDANCE,ZJθ10-2 0000....1000521 PDM t1 FET MAMP SINGLE PULSE t2 NORI10-3 RθJA = 125 oC/W NDOUTTYE SF:ACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 10-4 10-4 10-3 10-2 10-1 1 10 102 103 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDS6675BZ Rev.B2

F D S 6 6 7 5 B Z TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not P intended to be an exhaustive list of all such trademarks. - C Build it Now™ FRFET® Programmable Active Droop™ h CorePLUS™ Global Power ResourceSM QFET® a CorePOWER™ Green FPS™ QS™ TinyBoost™tm n CROSSVOLT™ Green FPS™ e-Series™ Quiet Series™ TinyBuck™ n CTL™ GTO™ RapidConfigure™ TinyLogic® e CEcuorrSePntA TRrKan®sfer Logic™ IISntOelPliMLAANXA™R™ ™ TTIinNyYPOoPwTeOr™™ l P EfficentMax™ MegaBuck™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ o EZSWITCH™ * MICROCOUPLER™ SmartMax™ ™ MicroFET™ SMART START™ TinyWire™ w MicroPak™ SPM® TriFault Detect™ e ® MillerDrive™ STEALTH™ TµSReUrEDCesU™RRENT™* rT MotionMax™ SuperFET™ Fairctmhild® Motion-SPM™ SuperSOT™-3 re Fairchild Semiconductor® OPTOLOGIC® SuperSOT™-6 n FFFAAASCCTTT®® Quiet Series™ OPTO®PLANAR® SSSyuunppcreeFrMSEOTO™TS™™-8 UUlHtrCa ®FRFET™ ch® FFalassthvWCorirtee™r® * PDPtm SPM™ ® UVCniXF™ET™ M FF-PPSF™S™ PPoowweerrT-SrePnMc™h® The Power Franchise® VXiSs™ualMax™ O PowerXS™ S *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. F E DISCLAIMER T FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I39 ©2009 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDS6675BZ Rev.B2

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