Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

(cid:8) F D S 6 6 7 July 2010 0 A S FDS6670AS 3 0 V 30V N-Channel PowerTrench(cid:2) SyncFET™ N - C General Description Features h a n The FDS6670AS is designed to replace a single SO-8 (cid:3) 13.5 A, 30 V. R max= 9.0 m(cid:4) @ V = 10 V n MOSFET and Schottky diode in synchronous DC:DC DS(ON) GS e power supplies. This 30V MOSFET is designed to RDS(ON) max= 11.5 m(cid:4) @ VGS = 4.5 V l P mRDaSx(OimN) ize apnodw elro wco ngvaetres iocnh aerfgficei.e n cyT,h per oFviDdSin6g6 a7 0lAowS (cid:3) Includes SyncFET Schottky body diode ow includes an integrated Schottky diode using Fairchild’s e monolithic SyncFET technology. (cid:3) Low gate charge (27nC typical) rT r e (cid:3) High performance trench technology for extremely low n c Applications RDS(ON) and fast switching h ® (cid:3) DC/DC converter (cid:3) High power and current handling capability S y (cid:3) Low side notebook (cid:3) RoHS Compliant n c F E D T D ™ 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS VGSS Gate-Source Voltage (cid:5)20 V ID Drain Current – Continuous (Note 1a) 13.5 A – Pulsed 50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 (cid:6)C Thermal Characteristics R(cid:7)JA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 (cid:6)C/W R(cid:7)JC Thermal Resistance, Junction-to-Case (Note 1) 25 (cid:6)C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6670AS FDS6670AS 13’’ 12mm 2500 units ©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS6670AS Rev.C1

F Electrical Characteristics D TA = 25°C unless otherwise noted S 6 Symbol Parameter Test Conditions Min Typ Max Units 6 7 0 Off Characteristics A BV Drain–Source Breakdown Voltage V = 0 V, I = 1 mA 30 V S DSS GS D (cid:9)(cid:8)(cid:8)(cid:8)B(cid:9)VTDSS CBroeeafkfidcioewnnt Voltage Temperature ID = 10 mA, Referenced to 25(cid:6)C 27 mV/(cid:6)C 30 J V I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 500 (cid:10)A DSS DS GS N IGSS Gate–Body Leakage VGS = (cid:5)20 V, VDS = 0 V (cid:5)100 nA -C h On Characteristics (Note 2) a n V Gate Threshold Voltage V = V , I = 1 mA 1 1.7 3 V GS(th) DS GS D n (cid:9)(cid:8)(cid:8)(cid:8)V(cid:9)GTS(th) GTeamtep Tehraretusrheo Cldo Veofflitcaiegnet ID = 10 mA, Referenced to 25(cid:6)C –4 (cid:8)m(cid:8)(cid:8)V/(cid:6)C el J P RDS(on) Static Drain–Source VGS = 10 V, ID = 13.5 A 7.5 9 m(cid:4) o On–Resistance V = 4.5 V, I = 11.2 A 9 11.5 w GS D e VGS=10 V, ID =13.5A, TJ=125(cid:6)C 10 12.5 r T I On–State Drain Current V = 10 V, V = 5 V 50 A r D(on) GS DS e g Forward Transconductance V = 10 V, I = 13.5 A 66 S n FS DS D c h Dynamic Characteristics ® Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 1540 pF S y Coss Output Capacitance f = 1.0 MHz 440 pF n C Reverse Transfer Capacitance 160 pF c rss F R g Gate Resistance 2.1 4. 2 (cid:4) E T Switching Characteristics ™ (Note 2) t Turn–On Delay Time 10 20 ns d(on) tr Turn–On Rise Time VDS= 15 V, ID = 1 A, 5 10 ns V = 10 V, R = 6 (cid:4) t( ) Turn–Off Delay Time GS GEN 27 44 ns doff t Turn–Off Fall Time 18 32 ns f t Turn–On Delay Time 13 23 ns d(on) tr Turn–On Rise Time VDS= 15 V, ID = 1 A, 15 27 ns V = 4.5 V, R = 6 (cid:4) t( ) Turn–Off Delay Time GS GEN 24 38 ns doff t Turn–Off Fall Time 13 23 ns f Q Total Gate Charge at Vgs=10V 27 38 nC g(TOT) Qg Total Gate Charge at Vgs=5V VDD = 15 V, ID = 13.5 A, 16 22 nC Q Gate–Source Charge 4.2 nC gs Q Gate–Drain Charge 5.1 nC gd ©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDS6670AS Rev.C1

F Electrical Characteristics D TA = 25°C unless otherwise noted S 6 Symbol Parameter Test Conditions Min Typ Max Units 6 7 0 Drain–Source Diode Characteristics and Maximum Ratings A VSD Drain–Source Diode Forward VGS = 0 V, IS = 3.5 A (Note 2) 0.5 0.7 V S Voltage VGS = 0 V, IS = 7 A (Note 2) 0.6 3 t Diode Reverse Recovery Time I = 13.5A, 20 nS 0 rr F V Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs (Note 3) 15 nC N - Notes: 1. R(cid:7)JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder C mounting surface of the drain pins. R(cid:7)JC is guaranteed by design while R(cid:7)CAis determined by the user's board design. ha n a) 50°C/W when b) 105°C/W when c) 125°C/W when mounted on a n mounted on a 1 in2 mounted on a .04 in2 minimum pad. e pad of 2 oz copper pad of 2 oz copper l P o w e r T r e n c Scale 1 : 1 on letter size paper h 2. Pulse Test: Pulse Width < 300(cid:10)s, Duty Cycle < 2.0% ® 3. See “SyncFET Schottky body diode characteristics” below. S y n c F E T ™ ©2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDS6670AS Rev.C1

F D Typical Characteristics S 6 6 7 0 A S 50 2.6 VGS = 10V 3.5V 3 4.0V CE 0 T (A) 40 6.0V 4.5V ZEDSISTAN2.2 VGS = 3.0V V N I, DRAIN CURREND123000 3.0V 2.5V R, NORMALIDS(ON)DRAIN-SOURCE ON-RE11..148 3.5V 4.0V 4.5V 6.0V 10V -Channel Po 0 0.6 w 0 0.5 1 1.5 2 0 10 20 30 40 50 e VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) rT r e Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with n Drain Current and Gate Voltage. c h ® S 1.4 0.025 y NCE VIDG =S =13 1.50AV M) ID = 6.75A nc R, NORMALIZEDDS(ON)DRAIN-SOURCE ON-RESISTA01..182 R, ON-RESISTANCE (OHDS(ON)0.000..100512 TA = 25oC TA = 125oC FET™ 0.6 0.005 -50 -25 0 25 50 75 100 125 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage. 50 10 VDS = 5V A) VGS = 0V NT (A) 40 RRENT ( 1 TA= 125oC RE 30 CU 25oC CUR AIN 0.1 I, DRAIN D1200 TA = 125oC -55oC EVERSE DR 0.01 -55oC R 25oC I, S 0 0.001 1 1.5 2 2.5 3 3.5 0 0.1 0.2 0.3 0.4 0.5 0.6 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. ©2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDS6670AS Rev.C1

F D Typical Characteristics (continued) S 6 6 7 0 A 10 2400 S GE (V) 8 ID =13.5A VDS = 10V 20V 1800 Vf G=S 1 =M 0H Vz 30V E VOLTA 6 15V NCE (pF) Ciss N-C RC TA1200 h TE-SOU 4 CAPACI Coss ann V, GAGS 2 600 el P Crss o 0 0 w 0 5 10 15 20 25 30 0 5 10 15 20 25 30 e Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) r T r Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. e n c h 100 50 ® A) 10 RDS(ON) LIMIT 10ms1ms100(cid:10)s WER (W)40 SRI(cid:7)NJTAG A=L = E1 22 P55U°°CCL/SWE Syn AIN CURRENT ( 1 DC10s11s00ms TRANSIENT PO2300 cFET™ DR VGS = 10V AK I, D 0.1 SRI(cid:7)NJAG =L E12 P5UoCL/SWE k), PE10 TA = 25oC P(p 0.01 0 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. CE 1 FFECTIVE RESISTAN 0.1 D =00 ..021.5 RR(cid:7)(cid:7)JAJA(t )= =1 2r(5t) °*C R/W(cid:7)JA D EAL 0.05 EM P(pk) ALIZHER 00.0.021 t1 RMT T 0.01 t2 r(t), NOANSIEN SINGLE PULSE DTuJt y- TCAy c=l eP, D* R =(cid:7) JtA1(/t )t2 TR 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. ©2010 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDS6670AS Rev.C1

F D Typical Characteristics (continued) S 6 6 7 0 A SyncFET Schottky Body Diode S Characteristics 3 0 Fairchild’s SyncFET process embeds a Schottky diode in Schottky barrier diodes exhibit significant leakage at high V parallel with PowerTrench MOSFET. This diode exhibits temperature and high reverse voltage. This will increase N similar characteristics to a discrete external Schottky the power in the device. - C diode in parallel with a MOSFET. Figure 12 shows the h reverse recovery characteristic of the FDS6670AS. 0.1 a A) n T ( n RREN 0.01 125oC el U P C E o AG w AK 0.001 100oC e RENT : 0.4A/div I, REVERSE LEDSS0.00.00000011 25oC rTrench® R U 0 10 20 30 S C VDS, REVERSE VOLTAGE (V) y n c Figure 14. SyncFET body diode reverse F leakage versus drain-source voltage and E T temperature. ™ TIME : 12.5ns/div Figure 12. FDS6670AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6670A). v di A/ 4 0. T : N E R R U C TIME : 12.5ns/div Figure 13. Non-SyncFET (FDS6670A) body diode reverse recovery characteristic. ©2010 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDS6670AS Rev.C1

F D S 6 6 7 0 A TRADEMARKS S The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 3 AccuPower(cid:11) F-PFS(cid:11) Power-SPM(cid:11) ®* 0 Auto-SPM(cid:11) FRFET® PowerTrench® V Build it Now(cid:11) Global Power ResourceSM PowerXS™ The Power Franchise® N CorePLUS(cid:11) Green FPS(cid:11) Programmable Active Droop(cid:11) -C CorePOWER(cid:11) Green FPS(cid:11) e-Series(cid:11) QFET® h CROSSVOLT(cid:11) Gmax(cid:11) QS(cid:11) TinyBoost(cid:11) a CTL(cid:11) GTO(cid:11) Quiet Series(cid:11) TinyBuck(cid:11) n Current Transfer Logic(cid:11) IntelliMAX(cid:11) RapidConfigure(cid:11) TinyCalc(cid:11) n DEUXPEED® ISOPLANAR(cid:11) (cid:11) TinyLogic® e DEEEcfSufoiaBcSliC eCPn(cid:11)oAtMoRla™Kx® (cid:11) MMMMIieiccCgrrRooaPFBOEauCkTcO(cid:11)k(cid:11)(cid:11)UPLER(cid:11) SSSSaimMgvnAainarRtglMWT oa iSusxrTe(cid:11) w(cid:11)ARorTld(cid:11), 1mW/W/kW at a time™ TTTTiiIinnnNyyyYPPWOoWiPwreMTe(cid:11)Or(cid:11)(cid:11)(cid:11) l Powe ® MicroPak2(cid:11) SPM® TriFault Detect(cid:11) rT FFFAaaiiCrrccThh iiQllddu® Sieetm Siecroiensd(cid:11)uctor® MMMioolltteiioorDnnM-rSivaPexM(cid:11)(cid:11)(cid:11) SSSuuTppEeeArrSLFOTEHTT(cid:11)(cid:11)(cid:11)-3 T(cid:10)SReUrEDCesU(cid:11)RRENT(cid:11)* renc FFFAAasSCtvTTC®®ore(cid:11) OOOPPptTToOOHPLiTOL™AG NICA®R® SSSuuupppeererrSSMOOOTTS(cid:11)(cid:11)(cid:11)--68 UUHltrCa ®FRFET(cid:11) h S® FETBench(cid:11) ® SyncFET(cid:11) UniFET(cid:11) y FFPlaSsh(cid:11)Writer®* PDP SPM™ Sync-Lock™ VVCisuXa(cid:11)lMax(cid:11) ncF XS™ E * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. T ™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to and (c) whose failure to perform when properly used in accordance cause the failure of the life support device or system, or to affect its with instructions for use provided in the labeling, can be reasonably safety or effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications may change in Advance Information Formative / In Design any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Preliminary First Production Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes No Identification Needed Full Production at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. Obsolete Not In Production The datasheet is for reference information only. Rev. I48 ©2010 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDS6670AS Rev.C1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: FDS6670AS