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F D S 5 3 April 2008 5 1 FDS5351 N - C N-Channel PowerTrench® MOSFET h a 60V, 6.1A, 35mΩ n n e Features General Description l P (cid:132) Max r = 35mΩ at V = 10V, I = 6.1A This N-Channel MOSFET is produced using Fairchild o DS(on) GS D Semiconductor‘s advanced Power Trench® process that has w (cid:132) Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A been especially tailored to minimize the on-state resistance and e r (cid:132) High performance trench technology for extremely low r yet maintain superior switching performance. T DS(on) r e (cid:132) 100% UIL Tested n c (cid:132) RoHS Compliant Application h ® (cid:132) Inverter Switch M (cid:132) Synchronous Rectifier O S (cid:132) Load Switch F E T D D D 5 4 G D D D 6 3 S D 7 2 S G SO-8 S D 8 1 S S Pin 1 S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous 6.1 I A D -Pulsed 30 E Single Pulse Avalanche Energy (Note 3) 73 mJ AS Power Dissipation T = 25°C (Note 1a) 5 P A W D Power Dissipation T = 25°C (Note 1b) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS5351 FDS5351 SO-8 13’’ 12mm 2500units ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS5351 Rev.C

F D Electrical Characteristics S T = 25°C unless otherwise noted J 5 3 Symbol Parameter Test Conditions Min Typ Max Units 5 1 Off Characteristics N - BV Drain to Source Breakdown Voltage I = 250µA, V = 0V 60 V C DSS D GS h ∆BV Breakdown Voltage Temperature DSS I = 250µA, referenced to 25°C 55 mV/°C a ∆T Coefficient D n J n IDSS Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V 1 µA e IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA l P o On Characteristics w e VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 2.0 3.0 V rT ∆∆VTJGS(th) GTeamtep teor aStuoruer cCeo Tehffriceisehnotld Voltage ID = 250µA, referenced to 25°C -6.2 mV/°C ren V = 10V, I = 6.1A 26.5 35.0 c GS D h r Static Drain to Source On Resistance V = 4.5V, I = 5.5A 32.4 42.0 mΩ ® DS(on) GS D V = 10V, I = 6.1A, T = 125°C 44.5 58.8 M GS D J O g Forward Transconductance V = 5V, I = 6.1A 24 S FS DD D S F Dynamic Characteristics E T C Input Capacitance 985 1310 pF iss V = 30V, V = 0V, C Output Capacitance DS GS 90 120 pF oss f = 1MHz C Reverse Transfer Capacitance 50 75 pF rss R Gate Resistance f = 1MHz 1.7 Ω g Switching Characteristics t Turn-On Delay Time 8 16 ns d(on) V = 30V, I = 6.1A, t Rise Time DD D 3 10 ns r V = 10V, R = 6Ω t Turn-Off Delay Time GS GEN 21 34 ns d(off) t Fall Time 2 10 ns f Q Total Gate Charge V = 0V to 10V 19 27 nC g GS V = 30V, Q Total Gate Charge V = 0V to 4.5V DD 9 13 nC g GS I = 6.1A Q Gate to Source Charge D 3 nC gs Q Gate to Drain “Miller” Charge 3.5 nC gd Drain-Source Diode Characteristics V = 0V, I = 6.1A (Note 2) 0.82 1.3 V Source to Drain Diode Forward Voltage GS S V SD V = 0V, I = 2.1A (Note 2) 0.76 1.2 GS S t Reverse Recovery Time 24 38 ns rr I = 6.1A, di/dt = 100A/µs Q Reverse Recovery Charge F 15 27 nC rr NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a b) 125°C/W when mounted on a 1in2 pad of 2 oz copper. minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. UIL condition: Starting TJ = 25°C, L = 3mH, IAS = 7A, VDD = 60V, VGS = 10V. ©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDS5351 Rev.C

F D Typical Characteristics S TJ = 25°C unless otherwise noted 5 3 5 30 3.0 1 , IDRAIN CURRENT (A) D 12000 VVGSG S= = 4 1.50VV PDVUUGLTS SY=E C 4 DYVUCRLEA T=I OV0V.GN5GS %S= = M=8 3 0A3.µ5VXsV NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 01122.....50505 VGS =PD UU3VLTSYE C DYUCRLEA T=I O0.N5V %=G M8S0 A=µX s3.5V VVVGGGSSS = == 1440.V5VV N-Channel PowerTren 0 1 2 3 0 10 20 30 c VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN CURR ENT(A) h® Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance M O vs Drain Current and Gate Voltage S F 2.0 100 E T ANCE 1.8 VIDG S= =6 .110AV )Ω 80 ID = 6.1A PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AµXs T m SIS 1.6 (E NORMALIZED AIN TO SOURCE ON-RE 0111....8024 r, DRAIN TO DS(on) OURCE ON-RESISTANC 246000 TJ =T J2 5=o 1C25oC R S D 0.6 0 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOUR CE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 30 100 PULSE DURATION = 80µs A) VGS = 0V DUTY CYCLE = 0.5%MAX T ( N 10 E T (A) 20 VDS = 5V URR RREN AIN C 1 TJ = 125oC CU TJ = 125oC DR TJ = 25oC AIN 10 RSE 0.1 DR TJ = 25oC VE I, D TJ = -55oC I, RES0.01 TJ = -55oC 0 0.001 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDS5351 Rev.C

F D Typical Characteristics S T = 25°C unless otherwise noted J 5 3 5 10 4000 1 AGE(V) 8 ID = 6.1A 1000 Ciss N-C E VOLT 6 VDD = 30V E (pF) han URC VDD = 20V VDD = 40V ANC Coss ne SO 4 CIT 100 l P ATE TO 2 CAPA f = 1MHz Crss owe , GS VGS = 0V rT VG 0 10 re 0 4 8 12 16 20 0.1 1 10 100 n c Qg, GATE CH ARGE(nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) h ® Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain M to Source Voltage O S F 8 10 E T ENT(A) 6 NT (A) 8 VGS = 10V R E R R 6 U R E C TJ = 25oC CU VGS = 4.5V H 4 N NC AI 4 A R L D AVA TJ = 125oC , ID 2 , AS 2 RθJA = 50oC/W I 1 0 0.01 0.1 1 10 30 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE(ms) TA, AMBIENT TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Ambient Temperature 100 1000 W) R ( VGS = 10V SINGLE PULSE NT (A) 10 POWE 100 RTAθJ =A 2=5 1oC25oC/W AIN CURRE 1 TLIHMISIT AERDE BAY I SrD S(on) 1110m00msmss RANSIENT 10 DR SINGLE PULSE K T I, D00.0.11 TRTJAθ J ==A M2=5 A1oXC25 RoCA/TWED 11Ds0Cs , PPEA()PK 0.15 0.01 0.1 1 10 100 300 10-4 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WIDT H (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation ©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDS5351 Rev.C

F D Typical Characteristics S T = 25°C unless otherwise noted J 5 3 5 1 2 N 1 -C DUTY CYCLE-DESCENDING ORDER h a AL D = 0.5 n M A 0.2 n ERZJθ 0.1 0.1 e ORMALIZED TH IMPEDANCE, 0.01 000...000521 NOTES: PDM t1t2 l PowerT N SINGLE PULSE DUTY FACTOR: D = t1/t2 re RθJA = 125oC/W PEAK TJ = PDM x ZθJA x RθJA + TA n c h 0.001 10-4 10-3 10-2 10-1 1 10 100 1000 ® M t, RECTANGULAR PULSE DURATION (sec) O S Figure 13. Transient Thermal Response Curve F E T ©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDS5351 Rev.C

F D S 5 3 5 1 N - C TRADEMARKS h a The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global n subsidianries, and is not intended to be an exhaustive list of all such trademarks. n e ACEx® FPS™ PDP-SPM™ The Power Franchise® l Build it Now™ F-PFS™ Power-SPM™ P CorePLUS™ FRFET® PowerTrench® o tm w CorePOWER™ Global Power ResourceSM Programmable Active Droop™ TinyBoost™ e CROSSVOLT™ Green FPS™ QFET® TinyBuck™ r T CTL™ Green FPS™ e-Series™ QS™ TinyLogic® r e Current Transfer Logic™ GTO™ Quiet Series™ TINYOPTO™ n EcoSPARK® IntelliMAX™ RapidConfigure™ TinyPower™ c h EfficentMax™ ISOPLANAR™ Saving our world 1mW at a time™ TinyPWM™ ® EZSWITCH™ * MegaBuck™ SmartMax™ TinyWire™ M ™ MICROCOUPLER™ SMART START™ µSerDes™ O MicroFET™ SPM® ® S MicroPak™ STEALTH™ F Fairctmhild® MillerDrive™ SuperFET™ UHC® E Fairchild Semiconductor® MotionMax™ SuperSOT™-3 Ultra FRFET™ T FACT Quiet Series™ Motion-SPM™ SuperSOT™-6 UniFET™ FACT® OPTOLOGIC® SuperSOT™-8 VCX™ FAST® OPTOPLANAR® SuperMOS™ VisualMax™ FastvCore™ ® ® FlashWriter® * tm * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, 2. A critical component in any component of a life support, (a) are intended for surgical implant into the body or (b) device, or system whose failure to perform can be reasonably support or sustain life, and (c) whose failure to perform when expected to cause the failure of the life support device or properly used in accordance with instructions for use provided system, or to affect its safety or effectiveness. in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition This datasheet contains the design specifications for product development. Advance Information Formative or In Design Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be pub- Preliminary First Production lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves No Identification Needed Full Production the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Obsolete Not In Production Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 ©2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDS5351 Rev.C

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

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