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F D May 2001 S 3 5 1 2 FDS3512 80V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed • 4.0 A, 80 V R = 70 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 80 mΩ @ V = 6 V converters using either synchronous or conventional DS(ON) GS switching PWM controllers. • Low gate charge (13nC Typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Fast switching speed R specifications. DS(ON) • High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power low RDS(ON) supply designs with higher overall efficiency. • High power and current handling capability D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 80 V DSS VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 4.0 A – Pulsed 30 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3512 FDS3512 13’’ 12mm 2500 units  2001 Fairchild Semiconductor Corporation FDS3512 Rev B1 (W)

F D Electrical Characteristics T = 25°C unless otherwise noted S A 3 Symbol Parameter Test Conditions Min Typ Max Units 5 1 2 Drain-Source Avalanche Ratings (Note 2) W Single Pulse Drain-Source V = 40 V, I = 4.0 A 90 mJ DSS DD D Avalanche Energy I Maximum Drain-Source 4.0 A AR Avalanche Current Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 80 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C 80 mV/°C ∆T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 µA I Gate–Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate–Body Leakage, Reverse V = –20 V, V = 0 V –100 nA GSSR GS DS On Characteristics (Note 2) VGS(th)n Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.4 4 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C –6 mV/°C ∆T Temperature Coefficient J RDS(on) Static Drain–Source VGS = 10 V, ID = 4.0 A 50 70 mΩ On–Resistance VGS = 6 V, ID = 3.7A 55 80 V = 10 V, I = 4.0 A, T = 125°C 91 135 GS D J I On–State Drain Current V = 10 V, V = 5 V 20 A D(on) GS DS G Forward Transconductance V = 10 V, I = 4.0 A 14 S FS GS D Dynamic Characteristics C Input Capacitance V = 40 V, V = 0 V, 634 pF iss DS GS C Output Capacitance f = 1.0 MHz 58 pF oss C Reverse Transfer Capacitance 28 pF rss Switching Characteristics (Note 2) t Turn–On Delay Time V = 40 V, I = 1 A, 7 14 ns d(on) DD D tr Turn–On Rise Time VGS = 10 V, RGEN = 6 Ω 3 6 ns t Turn–Off Delay Time 24 38 ns d(off) t Turn–Off Fall Time 4 8 ns f Q Total Gate Charge V = 40 V, I = 4.0 A, 13 18 nC g DS D V = 10 V Q Gate–Source Charge GS 2.4 nC gs Q Gate–Drain Charge 2.8 nC gd Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain–Source Diode Forward Current 2.1 A S VSD Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A (Note 2) 0.8 1.2 V Voltage Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when b) 105 °C/W when c) 125 °C/W when mounted on a mounted on a 1in2 mounted on a 0.04 minimum pad. pad of 2 oz copper in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS3512 Rev B1 (W)

F D Typical Characteristics S 3 5 1 2 20 1.8 VGS = 10V 5.0V E 6.0V 4.5V ANC1.6 I, DRAIN CURRENT (A)D11055 4.0V R, NORMALIZEDDS(ON)AIN-SOURCE ON-RESIST11..124 VGS = 4.0V 4.5V 5.0V 6.0V 10V R D 0 0.8 0 1 2 3 4 5 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.5 0.18 ORMALIZEDE ON-RESISTANCE112...692 VGIDS == 41A0V SISTANCE (OHM)00..1104 TA = 125oC ID =2A R, NDS(ON)RAIN-SOURC01..713 R, ON-REDS(ON)0.06 TA = 25oC D 0.4 0.02 -50 -25 0 25 50 75 100 125 150 175 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage. 20 100 A) VGS = 0V VDS = 5V T ( 10 N NT (A) 15 URRE 1 TA = 125oC URRE 10 AIN C 0.1 25oC C R I, DRAIN D 5 TA = 1252oC5oC REVERSE D 0.00.0011 -55oC -55oC I, S 0.0001 0 0 0.2 0.4 0.6 0.8 1 1.2 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS3512 Rev B1 (W)

F D Typical Characteristics S 3 5 1 2 10 1000 GE (V) 8 ID = 4A VDS = 20V 40V 800 Vf G=S 1 =M 0H Vz TA 60V F) CISS L p ATE-SOURCE VO 46 CAPACITANCE ( 460000 V, GGS 2 200 COSS CRSS 0 0 0 3 6 9 12 15 0 20 40 60 80 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 W) SINGLE PULSE RENT (A) 10 RDS(ON) LIMIT 10m1sm1s00µs NT POWER (3400 RθJTA A= = 1 2255°°CC/W R E N CU 1 11s00ms ANSI I, DRAID 0.1 SRIθNJVTAG GA=L S= E1= 22 P155U0ooCCVL/SWE DC10s k), PEAK TR1200 p P( 0.01 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 E C E N D = 0.5 VA FFECTIRESIST 0.1 00.2.1 RRθJθAJA(t )= = 1 r2(5t) °+C R/WθJA D EAL 0.05 EM P(pk) ALIZHER 0.00.201 t1 RMT T 0.01 t2 ON r(t), NANSIE SINGLE PULSE DTuJt y- TCAy c=l eP, D* R =θ JtA1 (/t )t2 R T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS3512 Rev B1 (W)

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST OPTOPLANAR™ SuperSOT™-3 Bottomless™ FASTr™ PACMAN™ SuperSOT™-6 CoolFET™ FRFET™ POP™ SuperSOT™-8 CROSSVOLT™ GlobalOptoisolator™ PowerTrench SyncFET™ DenseTrench™ GTO™ QFET™ TinyLogic™ DOME™ HiSeC™ QS™ UHC™ EcoSPARK™ ISOPLANAR™ QT Optoelectronics™ UltraFET E2CMOSTM LittleFET™ Quiet Series™ VCX™ EnSignaTM MicroFET™ SILENT SWITCHER FACT™ MICROWIRE™ SMART START™ FACT Quiet Series™ OPTOLOGIC™ Stealth™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2

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