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F D August 2006 S 2 7 3 4 FDS2734 S tm N-Channel UItraFET Trench® MOSFET in g 250V, 3.0A, 117mΩ l e N Features General Descriptions - This single N-Channel MOSFET is produced using C (cid:132) Max rDS(on) =117mΩ at VGS =10V, ID = 3.0A Fairchild Semiconductor’s advanced UItraFET Trench® h (cid:132) Max r =126mΩ at V = 6V, I = 2.8A process that has been especially tailored to minimize a DS(on) GS D n the on-state resistance and yet maintain superior switching n (cid:132) Fast switching speed performance. e (cid:132) High performance trench technology for extremely Application l U low r DS(on) (cid:132) DC-DC conversion I t r (cid:132) High power and current handling capability a F (cid:132) RoHS compliant E T T r e n c D h D ® D 5 4 M D 6 3 O SO-8 S 7 2 F G E S S 8 1 T S Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 250 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Note 1a) 3.0 I A D -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 12.5 mJ AS Power dissipation (Note 1a) 2.5 P W D Power dissipation (Note 1b) 1.0 T , T Operating and Storage Junction Temperature Range -55 to 150 oC J STG Thermal Characteristics R Thermal Resistance, Junction- to -Ambient (Note 1a) 50 θJA R Thermal Resistance, Junction- to- Ambient (Note 1b) 125 oC/W θJA R Thermal Resistance, Junction -to- Case (Note 1) 25 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS2734 FDS2734 SO-8 13’’ 12mm 2500 units ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS2734 Rev. B

F Electrical Characteristics T = 25°C unless otherwise noted D J S Symbol Parameter Test Conditions Min Typ Max Units 2 7 Off Characteristics 3 4 BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 250 V S ∆BV Breakdown Voltage Temperature DSS I = 250µA, referenced to 25oC 157 mV/oC i ∆ T Coefficient D n J g V = 200V,V =0 V 1 IDSS Zero Gate Voltage Drain Current VDDSS = 200V, VGGSS = 0V TJ = 55oC 10 µA le N I Gate to Source Leakage Current V = ±20V, V =0 V ±100 nA GSS GS DS - C On Characteristics (Note 2) h a VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 3 4 V n ∆V Gate to Source Threshold Voltage n ∆ GTS(th) Temperature Coefficient ID = 250µA, referenced to 25oC -10.7 mV/c e J l VGS = 10V, ID = 3.0A, 97 117 U rDS(on) Drain to Source On Resistance VGS = 6V , ID = 2.8A, 101 126 mΩ It VGS = 10V, ID = 3.0A, TJ = 125oC 205 225 ra F g Forward Transconductance V =10V, I =3.0A, 15.1 S FS DS D E Dynamic Characteristics T T C Input Capacitance 1960 2610 pF Ciss Output Capacitance VDS = 100V, VGS = 0V, 85 130 pF re oss f = 1MHz n Crss Reverse Transfer Capacitance 26 40 pF c R Gate Resistance f = 1MHz 0.7 Ω h G ® Switching Characteristics M t Turn-On Delay Time 23 37 ns O d(on) t Rise Time VDD = 125V, ID = 3A 11 19 ns S r V = 10V, R = 6Ω F td(off) Turn-Off Delay Time GS GS 40 64 ns E t Fall Time 11 19 ns T f Qg Total Gate Charge VDS = 125V, VGS = 10V 32 45 nC Q Gate to Source Gate Charge I = 3.0A 9 nC gs D Q Gate to Drain Charge 8 nC gd Drain-Source Diode Characteristics V Source to Drain Diode Voltage I = 3.0A 0.74 1.2 V SD SD trr Reverse Recovery Time IF = 3.0 A, diF/dt = 100A/µs 72 108 ns Q Reverse Recovery Charge 185 278 nC rr Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. b) 125°C/W when a) 50°C/W when mounted on a minimum mounted on a 1in2 pad of 2 oz copper pad of 2 oz copper Scale 1 : 1 on letter size paper 2: Pulse Test Width <300µs, Duty Cycle <2%. 3: Starting TJ = 25°C, L = 1mH, IAS = 5A, VDD = 100V, VGS = 10V 2 www.fairchildsemi.com FDS2734 Rev. B

F Typical Characteristics TJ = 25°C unless otherwise noted D S 2 50 2.5 7 VGS- Descending Order E 3 VGS = 10V NC VGS = 5V 4 A) 40 8V STA2.0 VGS = 4.5V V = 6V S N CURRENT ( 2300 65VV ORMALIZED URCE ON-RESI1.5 GS VGS = 10V ingle N I, DRAID 10 PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AµXs NRAIN TO SO1.0 PDUULTSYE C VDYGUCSRL =EA T8=IV O0.N5 %= M80AµXs -Chan 0 D0.5 n 0 2 4 6 8 10 0 10 20 30 40 50 e VDS, DRAIN TO S OURCE VOLTAGE (V) ID, DRAIN CUR RENT(A) l U I Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain tr a Current and Gate Voltage F E T 2.8 0.4 CE ID = 3.0A ID =3A PULSE DURATION = 80µs T NORMALIZED SOURCE ON-RESISTAN1122....2604 VGS = 10V ON-RESISTANCE m() Ω 000...123 DUTTYJ =C Y15C0LoEC = 0.5%MAX rench MOS® RAIN TO 00..48 r, DS(on) 0.0 TJ = 25oC FET D -50 -25 0 25 50 75 100 125 150 3 4 5 6 7 8 9 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOUR CE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Figure 4. On-Resistance vs Gate to Source Temperature Voltage 20 100 PULSE DURATION = 80µs A) VGS = 0V ENT (A) 15 DUTY CYCLE = 0.5%MAX RRENT ( 10 TJ = 150oC R U R C U N C 10 AI N R RAI TJ = 150oC TJ = 25oC E D 1 TJ = 25oC D S , D 5 ER TJ = -55oC I V E TJ = -55oC , RS 0 I0.1 2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS2734 Rev. B

F Typical Characteristics TJ = 25°C unless otherwise noted D S 2 7 V)10 5000 Ciss 3 E( 4 AG 8 f = 1MHz S E VOLT 6 VDD = 50V VDD = 125V E (pF)1000 Coss VGS = 0V ingl C C e SOUR 4 VDD = 200V CITAN 100 Crss N- O A C TE T 2 CAP ha A G n V, GS 00 10 20 30 40 100.1 1 10 100 ne l Qg, GATE CH ARGE(nC) VDS,DRAIN TO SOURCE VOLTAGE (V) U I Figure 7. Gate Charge Characteristics Figure 8. Capacitance v s D r a i n t o S o u r c e V o l t a g e tra F E 10 3.5 T A) RENT ( T (A)23..50 VGS = 10V Tren R N U E c ANCHE C 1 TJ = 25oC AIN CURR12..50 VGS = 6V h M® AVAL TJ = 125oC , DRD1.0 OS , S I0.5 F IA RθJA = 50oC/W E 0.1 0.0 T 1E-3 0.01 0.1 1 10 100 25 50 75 100 125 150 tAV, TIME IN AVALANCHE (mS) TA, AMBIENT TEM PERATURE(oC) Figure 9. Unclamped Inductive Switching Figure 10. Maximum Continuous Drain Current vs Capability Ambient Temperature 102 104 10us W) TA = 25oC CURRENT (A) 110001 1ms SIENT POWER (110023 FACOBUI R=OR RVIT2EEE5 N M2T5P oEAC1--RS--5 -D-A -0-1F-E-T-2O-–-UR-5-L-T-RA--L-A-TE-O--ESW PSE:AK AIN 10-1 1100m0mss RAN VGS = 10V R T I, D D10-2 OPERATION IN THIS SINGLE PULSE D1Cs PEAK 101 10-3 ALIRMEITAE MDA BYY B rEDS (on) TTJA == M25AoXC RATED P, ()PK100 SINGLE PULSE 10-1 100 101 102 103 10-3 10-2 10-1 100 101 102 103 V , DRAIN TO SOURCE VOLTAGE (V) t, PULSE WID TH (s) DS Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDS2734 Rev. B

F Typical Characteristics D T = 25°C unless otherwise noted J S 2 7 4 3 DUTY CYCLE-DESCENDING ORDER 4 1 D = 0.5 S L 0.2 i D THERMANCE, ZJAθ00.0.11 0000....1000521 PDM ngle N EA LIZED1E-3 t1 -C AP MM t2 h ORI1E-4 NOTES: a N DUTY FACTOR: D = t1/t2 n SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TA n 1E-5 e 10-4 10-3 10-2 10-1 100 101 102 103 l t, RECTANGULAR PULSE DURATION(s) U I Figure 13. Transient Thermal Response Curve t r a Thermal characterization performed using the conditions described in Note 1b F E Transient thermal response will change depending on the circuit board design T T r e n c h ® M O S F E T 5 www.fairchildsemi.com FDS2734 Rev. B

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