Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D P 5 N November 2013 6 0 N FDP5N60NZ / FDPF5N60NZ Z / N-Channel UniFETTM II MOSFET F D 600 V, 4.5 A, 2.0 Ω P F 5 Features Description N 6 0 • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage N • Low Gate Charge (Typ. 10 nC) MOSFET family based on advanced planar stripe and DMOS Z technology. This advanced MOSFET family has the smallest — • Low C (Typ. 5 pF) rss on-state resistance among the planar MOSFET, and also pro- N • 100% Avalanche Tested vides superior switching performance and higher avalanche - • Improved dv/dt Capability energy strength. In addition, internal gate-source ESD diode C h allows UniFET II MOSFET to withstand over 2kV HBM surge • ESD Improved Capability a stress. This device family is suitable for switching power con- n • RoHS Compliant verter applications such as power factor correction (PFC), flat n e panel display (FPD) TV power, ATX and electronic lamp bal- l Applications lasts. U n • LCD / LED / PDP TV i F • Lighting E T • Uninterruptible Power Supply T M • AC-DC Power Supply I I M D O S F E T G G D G S TO-220 DS TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDP5N60NZ FDPF5N60NZ Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±25 V GSS - Continuous (T = 25oC) 4.5 4.5* I Drain Current C A D - Continuous (T = 100oC) 2.7 2.7* C I Drain Current - Pulsed (Note 1) 18 18* A DM E Single Pulsed Avalanche Energy (Note 2) 175 mJ AS I Avalanche Current (Note 1) 4.5 A AR E Repetitive Avalanche Energy (Note 1) 10 mJ AR MOSFET dv/dt 20 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns (T = 25oC) 100 33 W P Power Dissipation C D - Derate above 25oC 0.8 0.27 W/oC T , T Operating and Storage Temperature Range -55 to +150 oC J STG T Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC L *Dran current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP5N60NZ FDPF5N60NZ Unit RθJC Thermal Resistance, Junction to Case, Max. 1.25 3.75 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 ©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ Rev. C2

F D Package Marking and Ordering Information P 5 N Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 6 FDP5N60NZ FDP5N60NZ TO-220 Tube N/A N/A 50 units 0 N FDPF5N60NZ FDPF5N60NZ TO-220F Tube N/A N/A 50 units Z / Electrical Characteristics T = 25oC unless otherwise noted. F C D Symbol Parameter Test Conditions Min. Typ. Max. Unit P F Off Characteristics 5 N BV Drain to Source Breakdown Voltage I = 250 μA, V = 0 V 600 - - V 6 DSS D GS 0 ΔBV Breakdown Voltage Temperature N DSS I = 250 μA, Referenced to 25oC - 0.6 - V/oC / ΔT Coefficient D Z J V = 600 V, V = 0 V - - 1 — I Zero Gate Voltage Drain Current DS GS μA DSS VDS = 480 V, TC = 125oC - - 10 N IGSS Gate to Body Leakage Current VGS = ±25 V, VDS = 0 V - - ±10 μA -C h On Characteristics a n V Gate Threshold Voltage V = V , I = 250 μA 3.0 - 5.0 V n GS(th) GS DS D e RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.25 A - 1.65 2.0 Ω l U gFS Forward Transconductance VDS = 20 V, ID = 2.25 A - 5 - S n i F Dynamic Characteristics E T Ciss Input Capacitance - 450 600 pF T C Output Capacitance VDS = 25 V, VGS = 0 V, - 50 65 pF M oss f = 1 MHz I Crss Reverse Transfer Capacitance - 5 7.5 pF I M Qg Total Gate Charge at 10V VDS = 480 V, ID = 4.5 A, - 10 13 nC O Qgs Gate to Source Gate Charge VGS = 10 V - 2.5 - nC S F Qgd Gate to Drain “Miller” Charge (Note 4) - 4 - nC E T Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 4.5 A, - 15 40 ns tr Turn-On Rise Time VGS = 10 V, RG = 25 Ω - 20 50 ns t Turn-Off Delay Time - 35 80 ns d(off) tf Turn-Off Fall Time (Note 4) - 20 50 ns Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 18 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 4.5 A - - 1.4 V SD GS SD trr Reverse Recovery Time VGS = 0 V, ISD = 4.5 A, - 230 - ns Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 0.9 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 17.3 mH, IAS = 4.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 4.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ Rev. C2

F D Typical Performance Characteristics P 5 N 6 0 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics N Z 10 20 / VGS = 15.0V F 10.0V 10 D 8.0V P 7.0V F A] 6.0V A] 5 ent[ 5.5V ent[ 150oC N6 Curr 1 Curr 25oC 0N n n 1 Z Drai Drai — I, D I, D -55oC N *Notes: - *Notes: C 1. 250μs Pulse Test 2. TC = 25oC 12.. V25D0Sμ =s 2P0uVlse Test ha 0.1 0.1 n 0.1 1 10 20 2 4 6 8 10 n VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V] el U Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage n i Drain Current and Gate Voltage Variation vs. Source Current F E and Temperature T T 4 40 M I I M ce A] 10 O []ΩR ,DS(ON)n-Source On-Resistan23 VGSV =G S1 0=V 20V everse Drain Current [ 1 150oC 25oC SFET Drai I, RS *1N. oVtGeSs := 0V *Note: TC = 25oC 2. 250μs Pulse Test 1 0.1 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 1000 10 Ciss ge [V] 8 VVDDSS == 132000VV F] 100 Coss Volta VDS = 480V pacitances [p 10 Crss Gate-Source 46 Ca , S G V 2 Ciss = Cgs + Cgd (Cds = shorted) *Note: Coss = Cds + Cgd 1. VGS = 0V Crss = Cgd 2. f = 1MHz *Note: ID = 4.5A 1 0 10-1 1 10 30 0 2 4 6 8 10 VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC] ©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ Rev. C2

F D Typical Performance Characteristics P (Continued) 5 N 6 0 Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation N vs. Temperature vs. Temperature Z / 1.12 2.8 F D ge P olta 1.08 nce2.4 F5 BV, [Normalized]DSSDrain-Source Breakdown V 0011....99002604 * N 21o.. tIVeDGs =:S 2=5 00VμA R, [Normalized]DS(on)Drain-Source On-Resista0112....8260 * N 12o.. tIVeDGs =:S 2=. 2150AV N60NZ — N-Chann 0.88 0.4 e -80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160 l TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] U n i Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area F E - FDP5N60NZ - FDPF5N60NZ T T 50 30 M 30μs II 10 30μs M 10 100μs O nt [A] 1ms nt [A] 100μs SF Curre 1 10ms Curre 1 1ms ET n n ai DC ai Dr Operation in This Area Dr Operation in This Area 10ms I, D 0.1 is Limited by R DS*(Noon)tes: I, D 0.1 is Limited by* NRo DteS(so:n) 1. TC = 25oC 1. TC = 25oC DC 2. TJ = 150oC 2. TJ = 150oC 3. Single Pulse 3. Single Pulse 0.01 0.01 0.1 1 10 100 1000 0.1 1 10 100 10003000 VDS, Drain-Sou rce Voltage [V] VDS, Drain-Source Voltage [V] Figure 11. Maximum Drain Current vs. Figure 12. Unclamped Inductive Case Temperature Switching Capability 5 8 4 A) T( A] N nt [ 3 RRE TJ = 25oC e U Drain Curr 2 LANCHE C TJ = 125oC , D VA I A 1 , S A I 0 1 25 50 75 100 125 150 0.01 0.1 1 2 TC, Case Temperature [oC] tAV, TIME IN AV ALANCHE(ms) ©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ Rev. C2

F D Typical Performance Characteristics P (Continued) 5 N 6 0 Figure 13. Transient Thermal Response Curve - FDP5N60NZ N Z / W] 2 FD C/ 1 P onse [][ZθJC 0.5 F5N spose 0.2 6 en 0 Z(t), Thermal RθThermal RespoJC 0.1 S0000...i.000n1512gle pulse * N 132Po... tDZDTeMθJsuJM:tCy -( tFT) aC=c =1tt1o .P2tr2,5D DoMC =*/ WtZ1θ/ tJM2Ca(tx). NZ — N-Ch 0.01 a 10-5 10-4 10-3 10-2 10-1 1 n n t1, RecRtaencgtualnagr uPlualrs eP uDlusrea tDiounr a[steiocn] [ s ec] e l U Figure 14. Transient Thermal Response Curve - FDPF5N60NZ n i F E T T M W] 10 II M C/ o] O sponse [[se ZθJC 1 00..25 SFE Thermal Real Respon 0.1 000...01052 *NoPteDsM: t1t2 T Z(t), θThermJC 0S.i0n1gle pulse 12.. ZDθuJtCy( tF) a=c 3to.7r,5 DoC=/ Wt1/ tM2ax. 3. TJM - TC = PDM * ZθJC(t) 0.01 10-5 10-4 10-3 10-2 10-1 1 10 102 Rt1e, Rcteacntagnuglualra Pr uPluslese D Duurraattiioonn [[sseecc]] ©2011 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ Rev. C2

F D P 5 N 6 0 N Z / F D P F 5 N 6 0 N Z — N - C IG = const. h a n n e l U Figure 15. Gate Charge Test Circuit & Waveform n i F E T T M I I VVDDSS RRLL VVDDSS 9900%% MO S VVGGSS VVDDDD F E RR GG T 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 16. Resistive Switching Test Circuit & Waveforms V GS Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ Rev. C2

F D P 5 N 6 0 N Z / F DDUUTT ++ D P F 5 VV DDSS N 6 0 __ N Z — IISSDD N LLL - C h a n DDrriivveerr n RR e GG l SSaammee TTyyppee U aass DDUUTT VVDDDD n i F E VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR T GG T ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd M SSDD I I M O S F E T GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ Rev. C2

F D Mechanical Dimensions P 5 N 6 0 N Z / F D P F 5 N 6 0 N Z — N - C h a n n e l U n i F E T T M I I M O S F E T Figure 19. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2011 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ Rev. C2

F D Mechanical Dimensions P 5 N 6 0 N Z / F D P F 5 N 6 0 N Z — N - C h a n n e l U n i F E T T M I I M O S F E T Figure 20. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF22S-003 ©2011 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ Rev. C2

F D P 5 N 6 0 N Z TRADEMARKS / The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not F intended to be an exhaustive list of all such trademarks. D AccuPower™ F-PFS™ Sync-Lock™ P AX-CAP®* FRFET® ® ®* F BitSiC™ Global Power ResourceSM PowtmerTrench® 5 N Build it Now™ GreenBridge™ PowerXS™ TinyBoost® 6 CCoorreePPOLUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TTiinnyyBCuaclck™® 0N CROSSVOLT™ Gmax™ QS™ TinyLogic® Z CTL™ GTO™ Quiet Series™ TINYOPTO™ — Current Transfer Logic™ IntelliMAX™ RapidConfigure™ DEUXPEED® ISOPLANAR™ ™ TinyPower™ TinyPWM™ N Dual Cool™ Marking Small Speakers Sound Louder EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™ -C TranSiC™ EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ h ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* a ® MMiiccrrooPFEakT™™ SSMoluAtRioTn sS fToAr RYTou™r Success™ μSerDes™ nn Fairchild® MicroPak2™ SPM® el FFFFAAAaiSCCrcTTTh®® iQldu Sieet mSiecroiensd™uctor® OMMmpiWolltteoiSorHDnaiMvTriev™arex®™™ SSSSTuuupppEeeeArrrLSSFTEOOHTTT™®™™--36 UUUHlntriCFa E®FTR™FET™ UniF FastvCore™ OPTOLOGIC® SuperSOT™-8 VCX™ E FETBench™ OPTOPLANAR® SupreMOS® VisualMax™ T FPS™ SyncFET™ VXoSl™tagePlus™ TM I I M *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2011 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ Rev. C2

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