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F D P F 1 November 2013 5 N 6 FDPF15N65 5 — TM N-Channel UniFET MOSFET N 650 V, 15 A, 440 mΩ -C h a Features Description n n • R = 360 mΩ (Typ.) @ V = 10 V, I = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage e DS(on) GS D l MOSFET family based on planar stripe and DMOS technology. U • Low Gate Charge (Typ. 48.5 nC) This MOSFET is tailored to reduce on-state resistance, and to n • Low Crss (Typ. 23.6 pF) provide better switching performance and higher avalanche iF • 100% Avalanche Tested energy strength. This device family is suitable for switching E T power converter applications such as power factor correction T (PFC), flat panel display (FPD) TV power, ATX and electronic M lamp ballasts. M Applications O S • LCD/LED/PDP TV and Monitor F E • Uninterruptible Power Supply T D G G D S TO-220F S Absolute Maximum Ratings T = 25°C unless otherwise noted. C Symbol Parameter FDPF15N65 Unit V Drain-Source Voltage 650 V DSS I Drain Current - Continuous (T = 25°C) 15* A D C - Continuous (T = 100°C) 9.5* A C IDM Drain Current - Pulsed (Note 1) 60* A V Gate-Source voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 637 mJ AS I Avalanche Current (Note 1) 15 A AR E Repetitive Avalanche Energy (Note 1) 25.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 38.5 W D C - Derate Above 25°C 0.3 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C L * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol Parameter FDPF15N65 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 3.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDPF15N65 Rev. C1

F Package Marking and Ordering Information D P Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity F 1 FDPF15N65 FDPF15N65 TO-220F Tube N/A N/A 50 units 5 N 6 Electrical Characteristics T = 25°C unless otherwise noted. 5 C — Symbol Parameter Conditions Min. Typ. Max. Unit N Off Characteristics - C BV Drain-Source Breakdown Voltage V = 0 V, I = 250 μA, T = 25°C 650 -- -- V h DSS GS D J a ΔBV Breakdown Voltage Temperature n / ΔTDSS Coefficient ID = 250 μA, Referenced to 25°C -- 0.65 -- V/°C n J e IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- -- 1 μA l U VDS = 520 V, TC = 125°C -- -- 10 μA n i I Gate-Body Leakage Current, Forward V = 30 V, V = 0 V -- -- 100 nA F GSSF GS DS E IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA T T On Characteristics M V Gate Threshold Voltage V = V , I = 250 μA 3.0 -- 5.0 V M GS(th) DS GS D O RDS(on) Static Drain-Source V = 10 V, I = 7.5 A -- 0.36 0.44 Ω S On-Resistance GS D F E gFS Forward Transconductance VDS = 40 V, ID = 7.5 A -- 19.2 -- S T Dynamic Characteristics C Input Capacitance V = 25 V, V = 0 V, -- 2380 3095 pF iss DS GS f = 1 MHz C Output Capacitance -- 295 385 pF oss C Reverse Transfer Capacitance -- 23.6 35.5 pF rss Switching Characteristics t Turn-On Delay Time V = 325 V, I = 15 A, -- 65 140 ns d(on) DD D V = 10 V, R = 21.7 Ω t Turn-On Rise Time GS G -- 125 260 ns r t Turn-Off Delay Time -- 105 220 ns d(off) t Turn-Off Fall Time (Note 4) -- 65 140 ns f Q Total Gate Charge V = 520 V, I = 15 A, -- 48.5 63.0 nC g DS D V = 10 V Q Gate-Source Charge GS -- 14.0 -- nC gs Q Gate-Drain Charge (Note 4) -- 21.2 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 15* A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A SM V Drain-Source Diode Forward Voltage V = 0 V, I = 15 A -- -- 1.4 V SD GS S t Reverse Recovery Time V = 0 V, I = 15 A, -- 496 -- ns rr GS S Q Reverse Recovery Charge dIF/dt =100 A/μs -- 5.69 -- μC rr Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 5.23 mH, IAS = 15 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2006 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDPF15N65 Rev. C1

F D Typical Performance Characteristics P F 1 5 N Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 5 — V N GS Top : 15.0 V - 10.0 V C 8.0 V h 7.0 V 101 6.5 V a A] 6.0 V A] n Current [ Bottom : 5.5 V Current [ 101 150oC nel U I, Drain D 100 I, Drain D 25oC -55oC niFE * Notes : * Notes : T 12.. 2T5 0=μ s2 5PouClse Test 21.. 2V5DS0 μ=s 4 P0uVlse Test TM 10-110-1 100 101 C 1002 4 6 8 10 12 M V , Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] O DS S F Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage E Drain Current and Gate Voltage Variation vs. Source Current T and Temperatue 1.0 ce 0.8 A] ΩR [],DS(ON)Source On-Resistan 00..46 VGS = 10V erse Drain Current [ 101 150oC 25oC Drain- 0.2 VGS = 20V * Note : T = 25oC I, RevDR * N12..o V2te5Gs0S :μ=s 0 PVulse Test J 0.0 100 0 10 20 30 40 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I, Drain Current [A] V , Source-Drain voltage [V] D SD Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 5000 12 C = C + C (C = shorted) iss gs gd ds C = C + C oss ds gd V = 130V 4000 Coss Crss = Cgd V] 10 VDS = 325V s [pF] 3000 Ciss Voltage [ 8 VDDSS = 520V ance urce 6 Capacit 12000000 Crss * N12..o Vfte =G ;S 1 = M 0H Vz , Gate-SoGS 24 V * Note : I = 15A D 0 0 10-1 100 101 0 10 20 30 40 50 V , Drain-Source Voltage [V] Q, Total Gate Charge [nC] DS G ©2006 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDPF15N65 Rev. C1

F D Typical Performance Characteristics (Continued) P F 1 5 N Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation 6 vs. Temperature vs. Temperature 5 — 1.2 33.0.0 N e - g C BV, (Normalized)DSSSource Breakdown Volta011...901 * Notes : R, (Normalized)DS(ON)R, (Normalized)n-Source On-ResistanceDS(ON)ain-Source On-Resistance11221122....0505....0505 hannel UniFE Drain- 12.. VIDG =S =2 500 V μA DraiDr00.5.5 * * N12 N..o12 VIt..oe VItG sDe=SG s = :S=7 := 5.15 .01 5A 0 VA V TTM D 0.8-100 -50 0 50 100 150 200 00.0-.01-10000 -5-500 00 5500 110000 115500 220000 M TJ, Junction Temperature [oC] TTJJ,, JJuunnccttioionn TTeemmppeerraattuurree [[ooCC]] OS F E T Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 18 102 15 10 μs , Drain Current [A]D 110001 Ois pLeimraittieodn biny TRh DisS (oAn)rea DC100 m10s m1s m1s00 μs I, Drain Current [A]D 1269 I 10-1 * Notes : 1. T = 25 oC 3 C 2. T = 150 oC J 10-2 3. Single Pulse 025 50 75 100 125 150 100 101 102 103 T, Case Temperature [oC] V , Drain-Source Voltage [V] C DS Figure 11. Transient Thermal Response Curve W] C/ D=0.5 ose [onse 100 0.2 np spoRes 0.1 Z(t), Thermal ReθJCZ(t), Thermal θJC 1100--21 000...000215 single pulse * N123P...o DZDTteMθJusJMCt y:(-t )TF =Ca c=3tt o.1P3tr2 D,o MDC *=/ WZt1θ/ JtMC2(ta)x. 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 ©2006 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDPF15N65 Rev. C1

F D P F 1 5 N 6 5 — N VVGGSS -C SSaammee TTyyppee h 5500KKΩΩ aass DDUUTT QQ a gg n 1122VV 220000nnFF 1100VV n 330000nnFF e l VV VV DDSS U GGSS QQggss QQggdd n i F E DDUUTT T T IG = co33nmmsAAt. M M O CChhaarrggee S F E Figure 12. Gate Charge Test Circuit & Waveform T VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 13. Resistive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2006 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDPF15N65 Rev. C1

F D P F 1 5 N 6 5 — DDUUTT ++ N - C h VV a DDSS n n __ e l U n II iF SSDD E LLL T T M M DDrriivveerr O RR S GG SSaammee TTyyppee F aass DDUUTT VVDDDD ET VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2006 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDPF15N65 Rev. C1

F D Mechanical Dimensions P F 1 5 N 6 5 — N - C h a n n e l U n i F E T T M M O S F E T Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2006 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDPF15N65 Rev. C1

F D P F 1 5 N 6 5 TRADEMARKS — The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. 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