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F D P F 0 November 2013 8 5 N FDPF085N10A 1 0 A ® N-Channel PowerTrench MOSFET — 100 V, 40 A, 8.5 mΩ N - C Features Description h a • R = 6.5 mΩ (Typ.) @ V = 10 V, I = 40 A This N-Channel MOSFET is produced using Fairchild Semicon- n DS(on) GS D n • Fast Switching Speed ductor’s advanced PowerTrench® process that has been tai- e lored to minimize the on-state resistance while maintaining l P • Low Gate Charge, QG = 31 nC (Typ.) superior switching performance. o • High Performance Trench Technology for Extremely Low w Applications R e DS(on) r T • High Power and Current Handling Capability • Consumer Appliances r e • RoHS Compliant • LED TV n c • Synchronous Rectification for ATX / Sever / Telecom PSU h ® • Motor Drives and Uninterruptible Power Supplies M • Micro Solar Inverter O S F E D T G G D S TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDPF085N10A Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GSS - Continuous (T = 25oC) 40 I Drain Current C A D - Continuous (T = 100oC) 28 C I Drain Current - Pulsed (Note 1) 160 A DM E Single Pulsed Avalanche Energy (Note 2) 269 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns (T = 25oC) 33.3 W P Power Dissipation C D - Derate Above 25oC 0.22 W/oC T , T Operating and Storage Temperature Range -55 to +175 oC J STG T Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC L Thermal Characteristics Symbol Parameter FDPF085N10A Unit RθJC Thermal Resistance, Junction to Case, Max. 4.5 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDPF085N10A Rev. C1

F D Package Marking and Ordering Information P F Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 0 8 FDPF085N10A FDPF085N10A TO-220F Tube N/A N/A 50 units 5 N 1 Electrical Characteristics T = 25oC unless otherwise noted. 0 C A Symbol Parameter Test Conditions Min. Typ. Max. Unit — Off Characteristics N - BV Drain to Source Breakdown Voltage I = 250 μA, V = 0 V 100 - - V C DSS D GS ΔBV Breakdown Voltage Temperature h DSS I = 250 μA, Referenced to 25oC - 0.07 - V/oC a / ΔT Coefficient D n J n V = 80 V, V = 0 V - - 1 I Zero Gate Voltage Drain Current DS GS μA e DSS VDS = 80 V, TC = 150oC - - 500 l P IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA o w On Characteristics e r T VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.0 - 4.0 V r e RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 96 A - 6.5 8.5 mΩ n c gFS Forward Transconductance VDS = 10 V, ID = 96 A - 76 - S h ® Dynamic Characteristics M C Input Capacitance - 2025 2695 pF O iss C Output Capacitance VDS = 50 V, VGS = 0 V, - 468 620 pF S oss f = 1 MHz F C Reverse Transfer Capacitance - 20 - pF E rss T C (er) Engry Related Output Capacitance V = 50 V, V = 0 V - 752 - pF oss DS GS Q Total Gate Charge at 10V - 31 40 nC g(tot) Qgs Gate to Source Gate Charge VGS = 10 V, VDS = 50 V, - 9.7 - nC Qgs2 Gate Charge Threshoid to Plateau ID = 96 A - 5.0 - nC Qgd Gate to Drain “Miller” Charge (Note 4) - 7.5 - nC ESR Equivalent Series Resistance (G-S) f = 1 MHz - 0.97 - Ω Switching Characteristics t Turn-On Delay Time - 18 46 ns d(on) tr Turn-On Rise Time VDD = 50 V, ID = 96 A, - 22 54 ns V = 10 V, R = 4.7 Ω t Turn-Off Delay Time GS G - 29 68 ns d(off) tf Turn-Off Fall Time (Note 4) - 8 26 ns Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 40 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 160 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 96 A - - 1.3 V SD GS SD trr Reverse Recovery Time VDD = 50 V,VGS = 0 V, ISD = 96 A, - 59 - ns Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 80 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 13.4 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 40 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDPF085N10A Rev. C1

F D Typical Performance Characteristics P F 0 8 5 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics N 1 500 300 0 VGS = 15.0V A 10.0V — 8.0V 100 6.5V N A] 6.0V A] -C Current[100 55..50VV Current[ 175oC 25oC hann Drain Drain 10 el P I, D I, D -55oC ow *Notes: *Notes: 10 1. 250μs Pulse Test 1. VDS = 10V er 2. TC = 25oC 2. 250μs Pulse Test Tr 5 1 e 0.1 1 5 2 3 4 5 6 7 n VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V] ch ® Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage M Drain Current and Gate Voltage Variation vs. Source Current O and Temperature S F 18 500 E *Note: TC = 25oC T 16 ce A] 175oC ]Ω, Resistan12 VGS = 10V Current [ 100 [R mDS(ON)n-Source On- 8 everse Drain 10 25oC Drai VGS = 20V I, RS *1N. oVtes := 0V GS 2. 250μs Pulse Test 4 1 0 100 200 300 400 0.3 0.6 0.9 1.2 1.5 ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10000 10 V] VDS = 20V Ciss e [ 8 VDS = 50V ag VDS = 80V F] 1000 Volt es [p Coss urce 6 c o Capacitan 100 * N 12o.. tVfe =G: S1 M= H0Vz Crss , Gate-SGS 4 V 2 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: ID = 96A 10 0 0.1 1 10 100 0 7 14 21 28 35 VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC] ©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDPF085N10A Rev. C1

F D Typical Performance Characteristics P (Continued) F 0 8 5 Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation N vs. Temperature vs. Temperature 1 0 A 1.12 2.5 — e ag e N zed] wn Volt 1.08 zed] sistanc2.0 -Cha BV, [NormaliDSSn-Source Breakdo 11..0004 R, [NormaliDS(on)ain-Source On-Re11..05 nnel Powe Drai 0.96 * N 1o. tVeGs:S = 0V Dr * N 1o. tVeGs:S = 10V rTr 2. ID = 250μA 2. ID = 96A en 0.92 0.5 c -80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200 h TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] ® M Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current O vs. Case Temperature S F 500 45 E T 100 100μs 36 VGS= 10V A] n Current [ 10 110mmss Current [A] 27 , DraiD 1 Oisp Leirmaittieodn biny TRh DisS (Aonre)a 10D0Cms Drain 18 I *Notes: , D I 0.1 1. TC = 25oC 9 2. TJ = 175oC RθJC = 4.5oC/W 3. Single Pulse 0.01 0 0.1 1 10 100200 25 50 75 100 125 150 175 VDS, Drain-Sou rce Voltage [V] TC, Case Temperature [oC] Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive Switching Capability 2.5 30 If R = 0 A) tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) 2.0 NT ( ItfA VR = = ( L0/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] E R R 10 []μE, JOSS 1.5 ANCHE CU STARTING TJ = 150oC STARTING TJ = 25oC 1.0 L A V A , S 0.5 A I 0.0 1 0 20 40 60 80 100 0.01 0.1 1 10 100 300 VDS, Drain to Source Voltage [V] tAV, TIME IN AVALANCHE (ms) ©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDPF085N10A Rev. C1

F D Typical Performance Characteristics P (Continued) F 0 8 5 Figure 13. Transient Thermal Response Curve N 1 0 A W] 6 — ]C/ 0.5 N o[onse [e ZθJC 1 0.2 PDM -Ch hermal Respal Respons 0.1 000...00125 * N 1o. tZeθsJ:C(t) = 4t1.5t2oC/W Max. annel P (t), ThermC 0.01 32.. TDJuMty - FTaCc =to Pr,D DM =* tZ1θ/tJ2C(t) ow ZTθJ Single pulse e r T 0.01 r 10-5 10-4 10-3 10-2 10-1 1 10 100 e tR1,e Rcetacntagnuglualra rP Puulslsee D Duurraattiioonn [[sseecc]] nc h ® M O S F E T ©2011 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDPF085N10A Rev. C1

F D P F 0 8 5 N 1 0 A — N - C h a n n e l P o w e IG = const. rT r e n c h ® Figure 14. Gate Charge Test Circuit & Waveform M O S F E T VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 15. Resistive Switching Test Circuit & Waveforms V GS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDPF085N10A Rev. C1

F D P F 0 8 5 N 1 0 A DDUUTT ++ — N - VV C DDSS h a __ n n e l P II SSDD o LLL w e r T r DDrriivveerr e n RR c GG h SSaammee TTyyppee ® aass DDUUTT VVDDDD M O VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR S GG F ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd E SSDD T GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDPF085N10A Rev. C1

F D Mechanical Dimensions P F 0 8 5 N 1 0 A — N - C h a n n e l P o w e r T r e n c h ® M O S F E T Figure 18. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF22S-003 ©2011 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FDPF085N10A Rev. C1

F D P F 0 8 5 N 1 0 TRADEMARKS A The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. — AccuPower™ F-PFS™ Sync-Lock™ N ABXitS-CiCA™P®* FGRloFbEaTl P®ower ResourceSM Powtm®erTrench® ®* -C BCCuooirrleedPP itOL NUWoSEw™R™™ GGGrrreeeeeennn B FFrPPidSSg™™e™ e-Series™ PPQorFowEgeTrar®XmSm™able Active Droop™ TTiinnyyBBouocks®t® han TinyCalc™ n CROSSVOLT™ Gmax™ QS™ TinyLogic® e CCDTuErLUr™eXnPt ETEraDn®sfer Logic™ GIISnTtOeOlPli™MLAANXA™R™ QRaupieidt™ CSeorniefigs™ure™ TTTiiInnNyyYPPOoWPwMTe™Or™™ l Po Dual Cool™ Marking Small Speakers Sound Louder w EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TTirnaynWSiiCre™™ e EfficentMax™ MegaBuck™ SignalWise™ r ESBC™ MICROCOUPLER™ SmartMax™ TTrRiFUaEuClt UDReRteEctN™T®* Tr ® MicroFET™ SMART START™ μSerDes™ e MicroPak™ Solutions for Your Success™ n Fairchild® MicroPak2™ SPM® c FFAaiCrcTh iQldu Sieet mSiecroiensd™uctor® MMiollteiorDnMrivaex™™ SSTupEeArLFTEHT™® UHC® h® FACT® mWSaver® SuperSOT™-3 Ultra FRFET™ M FFFFAPaEsSSTtBT™vC®enocreh™™ OOOpPPtTToOOHPLiTOL™AGNICA®R® SSSSuuuynpppceereFrrSSMEOOTOTT™S™™®--68 UVVVXoiCSnsli™XutFaa™EglMTeP™alxu™s™ OSFE T *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2011 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com FDPF085N10A Rev. C1

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