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F D July 2000 P 6 0 3 0 B FDP6030BL/FDB6030BL L / F N-Channel Logic Level PowerTrench MOSFET D B 6 General Description Features 0 3 0 Tspheisc Nifi-cCahllya ntnoe ilm Lopgroicv eL etvheel MovOeSraFlEl Tef hfiacise bnecye no df eDsCig/nDeCd • 40 A, 30 V . RRDDSS((OONN)) == 00..002148 ΩΩ @@ VVGGSS == 41.05 VV. BL converters using either synchronous or conventional switching PWM controllers. • Critical DC electrical parameters specified at elevated temperature. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R • Rugged internal source-drain diode can eliminate the DS(on) need for an external Zener diode transient suppressor. specifications resulting in DC/DC power supply designs with higher overall efficiency. • High performance trench technology for extremely low R . DS(ON) • 175°C maximum junction temperature rating. D D G G G TO-220 D S FDP Series S TO-263AB S FDB Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FDP6030BL FDB6030BL Units V Drain-Source Voltage 30 V DSS VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous (Note 1) 40 A - Pulsed 120 PD Total Power Dissipation @ TC = 25°C 60 W Derate above 25°C 0.36 W/°C T, T Operating and Storage Junction Temperature Range -65 to +175 °C J STG Thermal Characteristics Rθ Thermal Resistance, Junction-to-Case 2.5 °C/W JC Rθ Thermal Resistance, Junction-to-Ambient 62.5 °C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDB6030BL FDB6030BL 13’’ 24mm 800 FDP6030BL FDP6030BL Tube N/A 45 2000 Fairchild Semiconductor International FDP6030BL/FDB6030BL Rev.C

F D P Electrical Characteristics TC = 25°C unless otherwise noted 6 0 Symbol Parameter Test Conditions Min Typ Max Units 3 0 B DRAIN-SOURCE AVALANCHE RATINGS (Note 1) L W Single Pulse Drain-Source V = 15 V, I = 40 A 150 mJ DSS DD D / Avalanche Energy F D IAR Maximum Drain-Source Avalnche Current 40 A B Off Characteristics 6 0 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V 3 ∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C 23 mV/°C B0 ∆T Coefficient J L IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA I Gate-Body Leakage Current, V = 20 V, V = 0 V 100 nA GSSF GS DS Forward I Gate-Body Leakage Current, V = -20 V, V = 0 V -100 nA GSSR GS DS Reverse On Characteristics (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.6 3 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C -4.5 mV/°C ∆T Temperature Coefficient J R Static Drain-Source V = 10 V, I = 20 A, 0.015 0.018 Ω DS(on) GS D On-Resistance V = 10 V, I = 20 A, T = 125°C 0.021 0.030 GS D J V = 4.5 V,I = 17 A 0.019 0.024 GS D I On-State Drain Current V = 10 V, V = 10 V 40 A D(on) GS DS g Forward Transconductance V = 5 V, I = 20 A 30 S FS DS D Dynamic Characteristics C Input Capacitance V = 15 V, V = 0 V, 1160 pF iss DS GS f = 1.0 MHz C Output Capacitance 250 pF oss C Reverse Transfer Capacitance 100 pF rss Switching Characteristics (Note 1) t Turn-On Delay Time V = 15 V, I = 1 A, 9 17 ns d(on) DD D Ω tr Turn-On Rise Time VGS = 10 V, RGEN = 6 11 20 ns t Turn-Off Delay Time 23 37 ns d(off) t Turn-Off Fall Time 8 16 ns f Q Total Gate Charge V = 15 V, 12 17 nC g DS I = 20 A, V = 5 V Q Gate-Source Charge D GS 3.2 nC gs Q Gate-Drain Charge 3.7 nC gd Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current (Note 1) 40 A VSD Drain-Source Diode Forward VGS = 0 V, IS = 20 A (Note 1) 0.95 1.2 V Voltage Note: 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDP6030BL/FDB6030BL Rev.C

F D Typical Characteristics P 6 0 3 0 A) 7800 VGS = 10V6.0V CE 22..46 LB DRAIN-SOURCE CURRENT ( 2345600000 5.0V4.5V4.0V 3.5V 3.0V R, NORMALIZEDDS(ON)AIN-SOURCE ON-RESISTAN 11112.....246822 VGS = 3.0V 3.5V 4.0V 4.5V5.0V 7.0V B/FDB6030 I, D 10 DR 1 10V L 0 0.8 0 1 2 3 4 5 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.06 ANCE 1.6 VIGD S= = 2 100AV HM)0.05 ID = 10 A R, NORMALIZEDDS(ON) DRAIN-SOURCE ON-RESIST 011...8124 VGS = 0V R, ON-RESISTANCE (ODS(ON)0000....00001234 TTA A= = 1 2255ooCC 0.6 0 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Temperature. with Gate-to-Source Voltage. 50 100 RENT (A) 3400 VDS = 5V TA = -55oC25oC125oC CURRENT (A) 101 VGS = 0V TA = 125oC 25oC I, DRAIN CURD 1200 REVERSE DRAIN 0.00.000.111 -55oC I, S 0 0.0001 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6030BL/FDB6030BL Rev.C

F D Typical Characteristics P (continued) 6 0 3 0 10 1600 B E VOLTAGE (V) 68 ID = 20A VDS = 5V 15V 10V NCE (pF) 111024000000 CISS fV =G S1 = M 0H Vz L/FDB OURC 4 ACITA 680000 60 ATE-S CAP 400 30 V, GGS 2 2000 CCORSSSS BL 0 0 5 10 15 20 25 30 0 5 10 15 20 25 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 1000 2500 VGS = 10V SINGLE PULSE SINGLE PULSE RAIN CURRENT (A) 11000 RRDSθ(JTOCNC )= =L 2 I2M.55IooTCC/W 1D0C01m0mss1ms100µs10µs POWER (W)112050000000 R θ J C T =C 2 =.5 °2C5/°WC D I, D 500 1 0 0.01 0.1 1 10 100 1,000 0.1 1 10 100 SINGLE PULSE TIME (mSEC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 E EVICTEFEF DE RMAL RESISTANC 0000....1235 0.1 0.2 D = 0.5 R θ R J C θ J ( Ct ) == r2(t.)5 *° C R/Wθ J C ZIALMRON)t, r( TRANSIENT THE000...000235 0 00...000152 Single Pulse P(pk)TDJ u- t Tyt1C C yt= 2c Ple , *D R = θ J t1 C /(t2t) 0.01 0.01 0.1 1 10 100 1000 t1 ,TIME (ms) Figure 11. Transient Thermal Response Curve. FDP6030BL/FDB6030BL Rev.C

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