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F D P 0 4 7 November 2013 N 0 FDP047N08 8 — ® N-Channel PowerTrench MOSFET N 75 V, 164 A, 4.7 mΩ -C h a Features Description n n • RDS(on) = 3.8 mΩ (Typ.) @ VGS = 10 V, ID = 80 A Tduhcist oNr’-sC haadnvannecl eMdO PSoFwEeTr Tisr epnrocdhu®c epdro ucseisnsg tFhaaitr chhailsd Sbeemenic otani-- el P • Fast Switching Speed o lored to minimize the on-state resistance while maintaining w • Low Gate Charge superior switching performance. e r T • High Performance Trench Technology for Extremely Low Applications r RDS(on) e n • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability c h • Battery Protection Circuit ® • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies M O S F E T D G G D S TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDP047N08 Unit V Drain to Source Voltage 75 V DSS V Gate to Source Voltage ±20 V GSS - Continuous (T = 25oC) 164* A I Drain Current C D - Continuous (T = 100oC) 116* A C I Drain Current - Pulsed (Note 1) 656 A DM E Single Pulsed Avalanche Energy (Note 2) 670 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns (T = 25oC) 268 W P Power Dissipation C D - Derate Above 25oC 1.79 W/oC T , T Operating and Storage Temperature Range -55 to +175 oC J STG T Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC L *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A. Thermal Characteristics Symbol Parameter FDP047N08 Unit RθJC Thermal Resistance, Junction to Case, Max. 0.56 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP047N08 Rev. C3

F D Package Marking and Ordering Information P 0 4 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 7 N FDP047N08 FDP047N08 TO-220 Tube N/A N/A 50 units 0 8 Electrical Characteristics T = 25oC unless otherwise noted. — C Symbol Parameter Test Conditions Min. Typ. Max. Unit N - C Off Characteristics h a BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V, TC = 25oC 75 - - V n ΔBV Breakdown Voltage Temperature n DSS I = 250 μA, Referenced to 25oC - 0.02 - V/oC e / ΔTJ Coefficient D l P V = 75 V, V = 0 V - - 1 I Zero Gate Voltage Drain Current DS GS μA o DSS V = 75 V, T = 150oC - - 500 w DS C e IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA r T r On Characteristics e n V Gate Threshold Voltage V = V , I = 250 μA 2.5 3.5 4.5 V c GS(th) GS DS D h RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 80 A - 3.7 4.7 mΩ ® gFS Forward Transconductance VDS = 10 V, ID = 80 A - 150 - S M O Dynamic Characteristics S F Ciss Input Capacitance - 7080 9415 pF E V = 25 V, V = 0 V, C Output Capacitance DS GS - 870 1155 pF T oss f = 1 MHz C Reverse Transfer Capacitance - 410 615 pF rss Switching Characteristics t Turn-On Delay Time - 100 210 ns d(on) tr Turn-On Rise Time VDD = 37.5 V, ID = 80 A, - 147 304 ns R = 25 Ω, V = 10 V t Turn-Off Delay Time G GS - 220 450 ns d(off) tf Turn-Off Fall Time (Note 4) - 114 238 ns Qg(tot) Total Gate Charge at 10V VDS = 60 V, ID = 80 A, - 117 152 nC Q Gate to Source Gate Charge V = 10 V - 37 - nC gs GS Q Gate to Drain “Miller” Charge (Note 4) - 32 - nC gd Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 164 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 656 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 80 A - - 1.25 V SD GS SD trr Reverse Recovery Time VGS = 0 V, ISD = 80 A, - 45 - ns Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 66 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 0.21 mH, IAS = 80 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 80 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDP047N08 Rev. C3

F D Typical Performance Characteristics P 0 4 7 N Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0 8 500 500 — VGS = 15.0V *Notes: 10.0V 1. VDS = 20V N 8.0 V 2. 250μs Pulse Test - 100 7.0 V C 6.5 V 100 h A] 6.0 V A] a ent[ 5.5 V ent[ 175oC nn n Curr n Curr 25oC el P ai 10 ai 10 o Dr Dr w I,D I,D -55oC e r *Notes: T 1. 250μs Pulse Test re 2. TC = 25oC n 1 1 c 0.002 0.01 0.1 1 3 4 5 6 7 h VDS,Drain-Source Voltage[V] VGS,Gate-Source Voltage[V] ® M Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage O S Drain Current and Gate Voltage Variation vs. Source Current F and Temperature E T 0.006 500 []ΩR ,DS(ON)Source On-Resistance00..000045 VGS = 10VVGS = 20V erse Drain Current [A] 10100 175oC 25oC n-0.003 ev ai R Dr , S *Notes: I 1. V = 0V *Note: TC = 25oC 2. 25G0Sμs Pulse Test 0.002 1 0 100 200 300 400 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12000 10 Ciss = Cgs + Cgd (Cds = shorted) Ciss CCorssss == CCgdds + Cgd ge [V] 8 VVVDDDSSS === 136570V.V5V a s [pF] 8000 ce Volt 6 ance Coss *Note: Sour pacit 4000 12.. Vf =G S1 M= H0Vz Gate- 4 Ca , S Crss VG 2 *Note: ID = 80A 0 0 0.1 1 10 30 0 20 40 60 80 100 120 VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC] ©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDP047N08 Rev. C3

F D Typical Performance Characteristics P (Continued) 0 4 7 N Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. 0 vs. Temperature Temperature 8 — 1.15 2.5 N e g - olta 1.10 nce Ch BV, [Normalized]DSSDrain-Source Breakdown V 011...900505 * N 1o. tVeGs:S = 0V R, [Normalized]DS(on)Drain-Source On-Resista 112...050 * N 1o. tVeGs:S = 10V annel PowerTren 0.90 2. ID = 10mA 0.5 2. ID = 80A ch -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 ® TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] M O S Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current F vs. Case Temperature E T 1000 180 100μs 150 100 A] Drain Current [ 101 Oisp Leirmatitioedn biny TRh DisS (Aonre)a 11m0ms10s0DmCs ain Current [A] 12900 I, D STCIN =G 2L5Eo CPULSE I, DrD 60 Limited by package 0.1 TJ = 175oC 30 R = 0.56oC/W θJC 0.01 0 1 10 100 25 50 75 100 125 150 175 VDS, Drain-Sou rce Voltage [V] TC, Case Temperature [oC] Figure 11. Transient Thermal Response Curve 1 W] oonse [C/]e [ZθJC 0.1 00..25 spns 0.1 eo mal RResp 00..0052 PDM Thermal 0.01 S0.i0n1gle pulse *Notes: t1t2 Z(t), θJCTher 12.. ZDθuJtCy( tF) a=c 0to.5r,6 DoC=/ Wt1/ tM2ax. 3. TJM - TC = PDM * ZθJC(t) 1E-3 10-5 10-4 10-3 10-2 10-1 100 t1R, eRcetcatnangguulalarr P Puullssee DDuurraattiioonn [ s[seec]c ] ©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDP047N08 Rev. C3

F D P 0 4 7 N 0 8 — N - C h a n n e l P o w e r T r IG = const. e n c h ® M Figure 12. Gate Charge Test Circuit & Waveform O S F E T VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 13. Resistive Switching Test Circuit & Waveforms V GS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDP047N08 Rev. C3

F D P 0 4 7 N 0 8 — DDUUTT ++ N - C h VV a DDSS n n e __ l P o w II SSDD e LLL rT r e n c DDrriivveerr h ® RR GG SSaammee TTyyppee M aass DDUUTT VVDDDD O S F VVGGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR E GG T ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDP047N08 Rev. C3

F D Mechanical Dimensions P 0 4 7 N 0 8 — N - C h a n n e l P o w e r T r e n c h ® M O S F E T Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDP047N08 Rev. C3

F D P 0 4 7 N 0 8 TRADEMARKS — The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not N intended to be an exhaustive list of all such trademarks. - AccuPower™ F-PFS™ Sync-Lock™ C AX-CAP®* FRFET® ® ®* h BitSiC™ Global Power ResourceSM PowtmerTrench® a Build it Now™ GreenBridge™ PowerXS™ TinyBoost® nn CCCooRrrOeePPSOLSUVWSOE™LRT™™ GGGrrmeeaeexnn™ FFPPSS™™ e-Series™ PQQrFSoE™gTra®mmable Active Droop™ TTTiiinnnyyyBCLouagclcikc™®® el P CTL™ GTO™ Quiet Series™ TINYOPTO™ o Current Transfer Logic™ IntelliMAX™ RapidConfigure™ w DEUXPEED® ISOPLANAR™ ™ TTiinnyyPPoWwMe™r™ e Dual Cool™ Marking Small Speakers Sound Louder r EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™ T TranSiC™ r EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ e ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* n ® MMiiccrrooPFEakT™™ SSMoluAtRioTn sS fToAr RYTou™r Success™ μSerDes™ ch Fairchild® MicroPak2™ SPM® ® FFFFFFFAPaAAEasiSSCTCrtcBT™vTThC®e® iQlnodcur eShie™™et mSiecroiensd™uctor® OOOMMmpPPiWollttTTeoiSoOrOHDnaPLiMvTrOiLev™aAreGx®N™™ICA®R® SSSSSSSTuuuuuynpppppEceeeerAeFrrrrLSSSFMETEOOOTOHTTTT™S™®™™™®---368 UUUVVVoiCHlnstlriXutCFaaa™ E®gFlMTeRP™aFlxuE™sT™™ MOSFET XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FDP047N08 Rev. C3

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